Tray Insulated Gate Bipolar Transistors (IGBT)

Manufacturer: Infineon Technologies. Win Source Part Number: 1324187-FF800R12KL4CNOSA1. Category: Discrete Semiconductor Products >Transistors - IGBTs - Modules. Packaging: Tray. Standard Package: 2. Mounting: Chassis Mount. Power - Max: 5 kW. Configuration: 2 Independent. Voltage - Collector... [See More]

• Packing Method: Tray; Tray
• T_J: -40 to 125

• V_CES: 1200
• Package Type: SOT3; Module

IGBT 600V 59A 230W Through Hole TO-3P(N) [See More]

• Packing Method: Tray
• Package Type: TO-3; TO-3P-3, SC-65-3

• T_J: 175

6500 V IHV, 500 A 130mm Diode IGBT module with EC3 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT3 products. Summary of Features. AlSiC Base Plate for increased Thermal Cycling Capability. Extended Storage Temperature down to T(stg) =... [See More]

• Packing Method: Tray; TRAY
• I_C(max): 500

• V_CES: 6500
• Package Type: A-IHV130

IGBT 1000V 50A TO-3P [See More]

• Packing Method: Tray
• Package Type: TO-3; TO-3P-3, SC-65-3

• T_J: 150

PrimePACK ™3 1700 V , 1000 A chopper IGBT module with TRENCHSTOP ™ IGBT4 and NTC. Also available with pre-applied Thermal Interface Material. Summary of Features. Extended Operation Temperature Tvj op. High DC Stability. High Current Density. Low Switching Losses. Tvj op== 150 °C. [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 2

• V_CES: 1700
• I_C(max): 1000

PRESS PACK IGBT [See More]

• Packing Method: Tray
• Package Type: DO-200AE

• T_J: -40 to 150
• Structure: Trench

EasyPACK ™ 650 V, 100 A booster IGBT module with TRENCHSTOP ™ 5 H5, CoolSiC ™ Schottky diode, PressFIT contact technology and pre-applied Thermal Interface Material. Summary of Features. Increased blocking voltage capability up to 650V. Low switching losses. Low inductive design. [See More]

• Packing Method: Tray; TRAY
• Package Type: AG-EASY1B

• I_C(max): 100
• Transistor Grade / Operating Range: Industrial

IGBT Trench Field Stop 1200V 48A 261W Through Hole TO-247-3 [See More]

• Packing Method: Tray
• Package Type: TO-247; TO-247-3

• T_J: -55 to 175
• Structure: Trench Field Stop

EasyPACK ™ 650 V, 100 A booster IGBT module with TRENCHSTOP ™ 5 H5, CoolSiC ™ Schottky diode, solder pins contact technology and pre-applied Thermal Interface Material. Summary of Features. Increased blocking voltage capability up to 650 V. Low switching losses. Low inductive... [See More]

• Packing Method: Tray; TRAY
• Package Type: AG-EASY1B

• I_C(max): 100
• Transistor Grade / Operating Range: Industrial

IGBT 1200V 45A 200W Through Hole TO-247AC [See More]

• Packing Method: Tray
• Package Type: TO-247; TO-247-3

• T_J: -55 to 150

EconoPACK ™ 4 650 V three phase chopper IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. Summary of Features. Increased blocking voltage capability to 650 V. Extended Operation Temperature T(vj op). T(vj op) = 150 °C. VCE(sat) with positive Temperature... [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 1.55

• V_CES: 650
• I_C(max): 300

EasyPACK ™ 2B 1200 V, 200 A 3-level phase leg IGBT module with active "Neutral Point Clamp 2", NTC, High Speed IGBT H3 and PressFIT Contact Technology. Summary of Features. Low inductive design. Low switching losses. Low VCEsat. Al2O3 substrate with low thermal resistance. Compact design. [See More]

• Packing Method: Tray; TRAY
• I_C(max): 200

• V_CE(on): 1.55
• Package Type: AG-EASY2B

EasyPACK ™ 2B 650 V 225 A 3-level phase leg IGBT module with High Speed IGBT H3, NTC, active "Neutral Point Clamp 2", PressFIT Contact Technology and pre-applied Thermal Interface Material. Summary of Features. Low inductive design. Low Switching Losses. Low VCE(sat). Al 2O3 Substrate with Low... [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 1.4

• V_CES: 650
• I_C(max): 225

EasyPACK ™ 3B 950 V, 400 A ANPC (active neutral point clamping) IGBT module with TRENCHSTOP ™ IGBT7, Emitter Controlled diode, NTC and PressFIT contact technology. Together with FS3L200R10W3S7F_B11, it provides a total solution for 1500 V 3-phase PV string inverters. Summary of Features. [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 1.4

• V_CES: 950
• I_C(max): 400

EasyPACK ™ 4B 950 V, 600 A 3-Level IGBT module with TRENCHSTOP ™ IGBT7 and 1200 V CoolSiC ™ Schottky Diode. Summary of Features. EasyPACK ™ 4B with three substrates. ANPC topology with four fast switches. 950 V IGBT7 and 1200 V SiC diode. Optimized stray inductance. Improved... [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 1.63

• V_CES: 950
• I_C(max): 600

EconoPACK ™ 3 1700 V, 100 A fourpack IGBT module with Trench/Fieldstop IGBT 4, emitter controlled diode, input rectifier and NTC. Summary of Features. Low VCEsat with positive temperature coefficient. Established Econo module concept. Isolated base plate. Solder contact technology. [See More]

• Packing Method: Tray; TRAY
• I_C(max): 100

• V_CE(on): 1.9
• Package Type: AG-ECONO3B

EconoPACK ™ 3 1700 V, 200 A fourpack IGBT module with Trench/Feldstopp IGBT4, Emitter Controlled diode and NTC. Summary of Features. Low VCEsat with positive temperature coefficient. Established Econo module concept. Isolated base plate. Solder contact technology. RoHS-compliant modules. [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 1.95

• V_CES: 1700
• I_C(max): 200

IHV B 3300 V, 1000 A 190mm chopper IGBT Module with IGBT3 - The best solution for your medium voltage and drives applications. Summary of Features. High DC Stability. High Short Circuit Capability. Self Limiting short Circuit Current. Low switching Losses. Tvj op = 150 °C. Low VCEsat with... [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 2.55

• V_CES: 3300
• I_C(max): 1000

1700V IHMB 130mm chopper IGBT Module with IGBT4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications. Summary of Features. T(vjop) = 150 °C. High reliability and robust module construction. Enlarged Diode for regenerative operation. UL recognised. [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 1.9

• V_CES: 1700
• I_C(max): 1200

1700V IHMB 190mm chopper IGBT Module with IGBT4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications. Summary of Features. Extended Operation Temperature T(vj op). Low V(CEsat). 4kV AC 1min Insulation. AlSiC Base Plate for increasing Thermal Cycling... [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 1.9

• V_CES: 1700
• I_C(max): 1600

62 mm 1700 V, 300 A chopper IGBT4 module with pre-applied Thermal Interface Material. Summary of Features. designed for frequency controlled drives. UL/CSA Certification with UL1557 E83336. Overload capability up to 175 °C max. Optimized switching behaviour. RoHS compliant. Benefits. [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 1.95

• V_CES: 1700
• I_C(max): 300

6500 V IHV, 500 A 190 mm chopper IGBT Module with IGBT3 - The best solution for your medium voltage and drives applications. Summary of Features. Low VCE(sat). AlSiC Base Plate for increased Thermal Cycling Capability. Extended Storage Temperature down to T(stg) = -55 °C. Package with CTI >... [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 3

• V_CES: 6500
• I_C(max): 500

PrimePACK ™2 1700 V, 650 A chopper IGBT module with IGBT4 and NTC. Summary of Features. Extended Operation Temperature Tvj op. High DC Stability. High Current Density. Low Switching Losses. Tvj op = 150 °C. Low VCE(sat). Package with CTI > 400. High Creepage and Clearance Distances. [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 2

• V_CES: 1700
• I_C(max): 650

4500V IHV, 800 A 190mm chopper IGBT Module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and isolated AlSiC Base Plate - The best solution for your traction and industry applications. Summary of Features. High DC Stability. High Short Circuit Capability, Self Limiting Short Circuit... [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 2.5

• V_CES: 4500
• I_C(max): 1200

PrimePACK ™3+ 1200 V, 1500 A dual IGBT module with TRENCHSTOPTM IGBT5 and .XT interconnection technology, Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and NTC. Also available with pre-applied Thermal Interface Material. Summary of Features. Extended operating temperature (T vjop = 175... [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 1.7

• V_CES: 1200
• I_C(max): 1500

EconoDUAL ™ 3 1700 V, 225 A half-bridge dual IGBT module with low sat and fast TRENCHSTOP ™ IGBT4 and Emitter Controlled 3 diode. Also available as variation with PressFIT mounting or with Thermal Interface Material. Summary of Features. Easy separation of DC and AC. Optimized thermal... [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 1.95

• V_CES: 1700
• I_C(max): 225

EconoDUAL ™ 3 1700 V, 225 A dual TRENCHSTOP ™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Summary of Features. Low VCE,sat. Tvj op = 175 °C overload. Optimized switching losses. Enhanced controllability of dv/dt. Improved diode softness and... [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 1.7

• V_CES: 1700
• I_C(max): 225

XHP ™3 6500 V, 225 A dual IGBT module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode. Summary of Features. Standardized XHP ™ 3 housing. 6.5 kV. 10.4 kV isolation. CTI 600. Fire and smoke classification according to EN45545 R22, R23, R24, HL2. AlSiC baseplate and AlN... [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 3

• V_CES: 6500
• I_C(max): 225

EconoDUAL ™ 3 650 V, 300 A dual IGBT module with TRENCHSTOP ™ IGBT4, Emitter Controlled Diode, NTC and PressFIT Contact Technology. Summary of Features. Increased blocking voltage capability to 650V. Increased DC link Voltage. High Short Circuit Capability. Self Limiting Short Circuit... [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 1.55

• V_CES: 650
• I_C(max): 300

EconoDUAL ™ 3 1200 V, 750 A dual TRENCHSTOP ™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Summary of Features. Highest power density. Tvj op = 175 °C overload. Improved terminals. Optimized creepage distance for 1500 V PV applications. PressFIT... [See More]

• Packing Method: Tray; TRAY
• V_CE(on): 1.5

• V_CES: 1200
• I_C(max): 750