TO-247 Insulated Gate Bipolar Transistors (IGBT)

600 V, 20 A IGBT Discrete in TO-247 package. High speed 600 V, 20 A single TRENCHSTOP ™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 20 to 100

• V_CE(on): 600
• t_r: 23

650V/30A FS4 SCR IGBT T0247-3L A [See More]

• Package Type: TO-247; TO-247-3

• T_J: -55 to 175

IGBT TRENCH FS 600V 60A TO-247N [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -55 to 150
• Structure: Trench Field Stop

IGBT TrenchStop N-Channel 650V 40A TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

AEC 101 Qualified, 650V, 40A Fieldstop 4 trench IGBT [See More]

• Package Type: TO-247; TO-247-3LD

• Packing Method: Tube; Tube

Win Source Part Number: 1008920-STGWA40IH65DF. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Series: IH. Package: Tube. Standard Package: 30. Power - Max: 238 W. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 650 V. Current - Collector (Ic)... [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 175

• V_CES: 650

Ultra Fast NPT - IGBT ®. The Ultra Fast NPT - IGBT ® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT ® offers superior ruggedness and ultrafast switching speed. Features. Low Saturation Voltage. Short Circuit Withstand... [See More]

• Package Type: TO-247; TO-247

600 V, 30 A IGBT Discrete in TO-247 package. High speed 600 V, 30 A single TRENCHSTOP ™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 20 to 100

• V_CE(on): 600
• t_r: 30

FS3 T TO247 40A 650V AUTO [See More]

• Package Type: TO-247; TO-247-3

• T_J: -55 to 175

IGBT TRENCH FS 600V 40A TO-247 [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -55 to 150
• Structure: Trench Field Stop

IGBT TrenchStop N-Channel 650V 50A TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

IGBT, 650V, 40A Field Stop Trench [See More]

• Package Type: TO-247; TO-247 3L

• Packing Method: Tube; Tube

Win Source Part Number: 1011358-RJH65T47DPQ-A0#T0. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 1. Power - Max: 375 W. Reverse Recovery Time (trr): 100 ns. IGBT Type: Trench. Voltage - Collector Emitter Breakdown (Max): 650 V. Current -... [See More]

• Package Type: TO-247; SOT3
• T_J: 175

• V_CES: 650

To further enhance the best-in-class performance of the TRENCHSTOP ™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP ™ 5 IGBT... [See More]

• Package Type: TO-247; PG-TO247-4
• Switching Speed: 30 to 100

• V_CE(on): 650
• t_r: 9

IGBT 650V TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• T_J: -40 to 175

IGBT PT 1200V 48A TO-247AD [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -55 to 150
• Structure: PT

IGBT TrenchStop N-Chan 1200V 40A TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1013092-STGW20H65FB. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 30. Power - Max: 168 W. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 650 V. Current - Collector (Ic) (Max): 40 A. [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 175

• V_CES: 650

1350 V, 20 A IGBT Discrete with anti-parallel diode in TO-247 package. The Reverse Conducting R5 1350 V, 20 A RC-H5 IGBTs with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for the demanding requirements of Induction Cooking applications. With a... [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 8 to 60

• V_CE(on): 1350
• t_f: 50

IGBT 1200V 30A TO-247 [See More]

• Package Type: TO-247; TO-247-3

• T_J: -55 to 175

IGBT PT 650V 180A TO-247AD [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -55 to 175
• Structure: PT

IGBT TrenchStop N-Channel 650V 40A TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1014357-STGW60H65DFB-4. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Series: HB. Package: Tube. Standard Package: 600. Power - Max: 375 W. Reverse Recovery Time (trr): 60 ns. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown... [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 175

• V_CES: 650

650 V, 40 A IGBT with monolithically integrated diode in TO-247 package. Reverse Conducting R6 650 V, 40 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using half-bridge resonant topology. Thanks to best... [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 20 to 75

• V_CE(on): 650
• t_r: 19

IGBT 1200V 41A 250W TO247 [See More]

• Package Type: TO-247; TO-247-3

• T_J: -55 to 150

IGBT NPT 1200V 25A 156W Through Hole TO-247 [B] [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -55 to 150
• Structure: NPT

IGBT TrenchStop N-Channel 600V 75A TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1014358-STGWA40H120F2. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 30. Power - Max: 468 W. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 1200 V. Current - Collector (Ic) (Max): 80 A. [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 175

• V_CES: 1200

600 V, 30 A IGBT with anti-parallel diode in TO-247 package. Hard-switching 600 V, 30 A high speed TRENCHSTOP ™ IGBT3 co-packed with Rapid 1 fast and soft anti-parallel diode in a TO-247 advanced isolation package for a best cost efficient solution. Summary of Features. TRENCHSTOP ™... [See More]

• Package Type: TO-247; PG-HSIP247-3
• Switching Speed: 18 to 60

• V_CE(on): 600
• t_r: 34

IGBT, 60A I(C), 600V V(BR)CES, N [See More]

• Package Type: TO-247; TO-247-3

• T_J: -55 to 150

IGBT Trench Field Stop 600V 40A 136W Through Hole TO-247-3 [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -55 to 175
• Structure: Trench Field Stop

IGBT TrenchStop N-Channel 600V 50A TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1015255-STGWA20HP65FB2. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Series: HB2. Package: Tube. Standard Package: 30. Power - Max: 147 W. Reverse Recovery Time (trr): 140 ns. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown... [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 175

• V_CES: 650

650 V, 40 A IGBT in TO-247 advanced isolation package. Hard-switching 650 V, 40 A TRENCHSTOP ™ 5 H5 IGBT discrete in TO-247 advanced isolation package is the highest efficiency discrete IGBT technology on the market ideally suited for customers who are looking for outstanding efficiency and... [See More]

• Package Type: TO-247; PG-HSIP247-3
• Switching Speed: 30 to 100

• V_CE(on): 650
• t_r: 29

IGBT, 60A I(C), 600V V(BR)CES, N [See More]

• Package Type: TO-247; TO-247-3

• T_J: -55 to 150

IGBT PT 1200V 96A 540W Through Hole T-MAX ™ [B2] [See More]

• Package Type: TO-247; TO-247-3 Variant
• Packing Method: Tube

• T_J: -55 to 150
• Structure: PT

IGBT TrenchStop N-Channel 600V 30A TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1017702-STGWA80H65FB. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 30. Power - Max: 469 W. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 650 V. Current - Collector (Ic) (Max): 120 A. [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 175

• V_CES: 650

600 V, 120 A IGBT discrete with anti-parallel diode in TO-247PLUS package. Hard switching 600 V, 120 A TRENCHSTOP ™ IGBT technology in a TO-247PLUS package for higher current capability. The TO-247PLUS package allows up to 120 A in 600 V with the same outer dimensions as the industry standard... [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 2 to 20

• V_CE(on): 600
• t_r: 75

IGBT, 60A I(C), 600V V(BR)CES, N [See More]

• Package Type: TO-247; TO-247-3

• T_J: -55 to 150

IGBT TRENCH FS 600V 75A TO-247L [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -40 to 175
• Structure: Trench Field Stop

IGBT 25A 1200V Ultra Field Stop TO-247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1018521-IXYH20N120C3D1. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Series: GenX3 ™, XPT ™. Package: Tube. Standard Package: 30. Power - Max: 230 W. Reverse Recovery Time (trr): 195 ns. Voltage - Collector Emitter Breakdown (Max):... [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 150

• V_CES: 1200

1200 V, 8 A IGBT7 S7 with anti-parallel diode in TO-247 package. Hard-switching 1200 V, 8 A TRENCHSTOP ™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter... [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 2 to 20

• V_CE(on): 1200
• t_r: 15

IGBT FIELD STOP 600V 40A TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• T_J: -55 to 150

IGBT Trench Field Stop 650V 91A 278W Through Hole TO-247-3 [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -55 to 150
• Structure: Trench Field Stop

Transistor IGBT N-Ch 600V 120A TO247 [See More]

• Package Type: TO-247; To-247ab

• Polarity: N-Channel

Win Source Part Number: 1019676-IRG7PH46U-EP. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 25. Power - Max: 469 W. IGBT Type: Trench. Voltage - Collector Emitter Breakdown (Max): 1200 V. Current - Collector (Ic) (Max): 130 A. Current -... [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 175

• V_CES: 1200

1200 V, 15 A IGBT with anti-parallel diode in TO-247 package. Hard-switching 1200 V, 15 A high speed TRENCHSTOP ™ IGBT6 in a TO-247 package co-packed with a very soft and fast recovery anti-parallel diode is optimized for the best compromise between switching and conduction losses. Summary of... [See More]

• Package Type: TO-247; PG-TO247-3
• t_r: 29

• Switching Speed: 18 to 60
• t_f: 27

INSULATED GATE BIPOLAR TRANSISTO [See More]

• Package Type: TO-247; TO-247-3

• T_J: -55 to 175

IGBT PT 1200V Through Hole TO-247AB [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -40 to 150
• Structure: PT

Transistor IGBT N-Ch 600V 80A TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1021721-IRG7PH44K10D-EPBF. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Bulk. Standard Package: 1. Power - Max: 320 W. Reverse Recovery Time (trr): 130 ns. Voltage - Collector Emitter Breakdown (Max): 1200 V. Current - Collector (Ic)... [See More]

• Package Type: TO-247; SOT3
• T_J: -40 to 150

• V_CES: 1200

650 V, 20 A IGBT with anti-parallel diode in TO-247 package. Hard-switching 650 V, 20 A TRENCHSTOP ™ IGBT7 discrete in TO-247 package with soft EC7 diode inside. This price performance optimized range has premium controllability for the better EMI while switching losses are lower than the... [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 5 to 40

• V_CE(on): 650
• t_r: 6

IGBT 1200V 80A 555W TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• T_J: -55 to 175

IGBT Trench 1200V 72A 390W Through Hole ISO247 [See More]

• Package Type: TO-247; TO-247-3
• Structure: Trench

• Packing Method: Tube

Transistor IGBT N-Ch 600V 80A TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1022147-IRG7PH50K10DPBF. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Bulk. Standard Package: 1. Power - Max: 400 W. Reverse Recovery Time (trr): 130 ns. Voltage - Collector Emitter Breakdown (Max): 1200 V. Current - Collector (Ic)... [See More]

• Package Type: TO-247; SOT3
• T_J: -40 to 150

• V_CES: 1200

650 V, 75 A IGBT Discrete with CoolSiC ™ diode. 650 V, 75 A TRENCHSTOP ™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC ™ Schottky barrier diode in TO-247-3 package. The ultra-fast 650 V hard-switching TRENCHSTOP ™ 5 H5 IGBT benefits very low switching losses at... [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 40 to 100

• V_CE(on): 650
• t_r: 9

IGBT 1200V 40A UFS FOR SO [See More]

• Package Type: TO-247; TO-247-4

• T_J: -55 to 175

IGBT 3000V 38A 200W Through Hole TO-247HV (IXBH) [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -55 to 150

Transistor IGBT N-Ch 600V 80A TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1022325-RJH65D27BDPQ-A0#T2. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 1. Power - Max: 375 W. Reverse Recovery Time (trr): 80 ns. IGBT Type: Trench. Voltage - Collector Emitter Breakdown (Max): 650 V. Current -... [See More]

• Package Type: TO-247; SOT3
• T_J: 175

• V_CES: 650

650 V, 20 A IGBT with anti-parallel diode in TO-247-3-HCC package. High speed 650 V, 20 A reverse conducting TRENCHSTOP ™ 5 WR6 IGBT in high creepage and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent... [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 20 to 75

• V_CE(on): 650
• t_r: 13

IGBT FIELD STOP 650V 150A TO247 [See More]

• Package Type: TO-247; TO-247-4

• T_J: -55 to 175

IGBT 3000V 80A 400W Through Hole TO-247HV [See More]

• Package Type: TO-247; TO-247-3 Variant
• Packing Method: Tube

• T_J: -55 to 150

IGBT 1200V 40A Field Stop Trench TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1022379-STGWA15H120DF2. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 600. Power - Max: 259 W. Reverse Recovery Time (trr): 231 ns. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 1200... [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 175

• V_CES: 1200

1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS package. Hard-switching 1200 V, 50 A HighSpeed 3 H3 in TO-247PLUS 4pin package. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration... [See More]

• Package Type: TO-247; PG-TO247-4
• Switching Speed: 18 to 60

• V_CE(on): 1200
• t_r: 29

1200V/40A FS7 IGBT TO247 [See More]

• Package Type: TO-247; TO-247-3

• T_J: -55 to 175

IGBT PT 1200V 140A Through Hole PLUS247 ™-3 [See More]

• Package Type: TO-247; TO-247-3 Variant
• Structure: PT

• Packing Method: Tube

IGBT TrenchStop N-Channel 600V 60A TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1022848-IXGH40N120A2. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 30. Power - Max: 360 W. IGBT Type: PT. Voltage - Collector Emitter Breakdown (Max): 1200 V. Current - Collector (Ic) (Max): 75 A. Current -... [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 150

• V_CES: 1200

1200 V, 40 A IGBT with anti-parallel diode in TO-247-4 package. Hard-switching 1200 V, 40 A high speed TRENCHSTOP ™ IGBT6 in a TO-247PLUS 4pin package co-packed with a soft and fast recovery full current anti-parallel diode is the responding to the market requirements for high efficiency and... [See More]

• Package Type: TO-247; PG-TO247-4
• Switching Speed: 10 to 50

• V_CE(on): 1200
• t_r: 27

FS4 MID SPEED IGBT 650V 75A TO24 [See More]

• Package Type: TO-247; TO-247-4

• T_J: -55 to 175

IGBT PT 1200V 60A 300W Through Hole TO-247AD [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -55 to 150
• Structure: PT

IGBT 600V 30A TRENCHSTOP 30kHz TO-247 [See More]

• Package Type: TO-247; To-247
• Number of units in IC: 1

• Polarity: N-Channel

Win Source Part Number: 1025001-STGWA15H120F2. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 30. Power - Max: 259 W. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 1200 V. Current - Collector (Ic) (Max): 30 A. [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 175

• V_CES: 1200

650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode. 650 V, 50A TRENCHSTOP ™ 5 S5 IGBT co-packed with full-rated 6th generation Silicon Carbide CoolSiC ™ Schottky barrier diode in Kelvin-emitter TO-247-4 package. The 650 V hard-switching TRENCHSTOP ™ 5 S5 IGBT technology... [See More]

• Package Type: TO-247; PG-TO247-4
• Switching Speed: 10 to 30

• V_CE(on): 650
• t_r: 9

650V FS GEN3 TRENCH IGBT [See More]

• Package Type: TO-247; TO-247-3

• T_J: -55 to 175

IGBT PT 650V 250A 880W Through Hole TO-247 (IXTH) [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -55 to 175
• Structure: PT

IGBT 650V 50A TRENCHSTOP 10-40kHz TO-247 [See More]

• Package Type: TO-247; To-247
• Number of units in IC: 1

• Polarity: N-Channel

Win Source Part Number: 1025002-STGWA40HP65FB2. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Series: HB2. Package: Tube. Standard Package: 30. Power - Max: 227 W. Reverse Recovery Time (trr): 140 ns. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown... [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 175

• V_CES: 650

Hybrid Power Discrete with SiC power technology in THD package for e-Mobility applications. Best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. Therefore, Infineon has developed a hybrid of 650V TRENCHSTOP ™ 5 AUTO... [See More]

• Package Type: TO-247; PG-TO247-3
• t_f: 13

• t_r: 12
• Packing Method: Tube; TUBE

IGBT NPT 1200V 35A TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• T_J: -55 to 150

IGBT TRENCH FS 650V 230A TO-247 [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Bulk

• T_J: -55 to 175
• Structure: Trench Field Stop

IGBT 600V 50A TRENCHSTOP 30kHz TO-247 [See More]

• Package Type: TO-247; To-247
• Number of units in IC: 1

• Polarity: N-Channel

Win Source Part Number: 1025004-STGWA60V60DF. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 30. Power - Max: 375 W. Reverse Recovery Time (trr): 74 ns. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 600 V. [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 175

• V_CES: 600

The automotive IGBT discrete AIKQ120N75CP2 is an EDT2 IGBT with a co-packed diode in the TO247PLUS package. The 750V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching... [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 7 to 15

• V_CE(on): 750
• t_r: 69

IGBT 1200V 30A 217W TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• T_J: -40 to 175

IGBT PT 1200V 106A 500W Through Hole TO-247 (IXYH) [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -55 to 175
• Structure: PT

IGBT 600V 30A TRENCHSTOP 30kHz TO-247 [See More]

• Package Type: TO-247; To-247
• Number of units in IC: 1

• Polarity: N-Channel

Win Source Part Number: 1026884-FGH40T65SPD-F155. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 30. Power - Max: 267 W. Reverse Recovery Time (trr): 34 ns. IGBT Type: Trench Field Stop. Voltage - Collector Emitter Breakdown (Max): 650 V. [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 175

• V_CES: 650

The automotive IGBT discrete AIKQ200N75CP2 is an EDT2 IGBT with a co-packed diode in the TO247PLUS package. The 750V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching... [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 7 to 15

• V_CE(on): 750
• t_r: 120

IGBT TRENCH 650V 120A TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• T_J: -40 to 175

IGBT PT 1200V 140A 600W Through Hole TO-247 (IXYH) [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -55 to 175
• Structure: PT

IGBT,Field Stop II,650V,40A,diode,TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1028916-IRG7PH46UDPBF. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 400. Power - Max: 390 W. Reverse Recovery Time (trr): 140 ns. IGBT Type: Trench. Voltage - Collector Emitter Breakdown (Max): 1200 V. Current -... [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 150

• V_CES: 1200

The AIKQB120N75CP2 discrete IGBT in a 3-Pin TO247PLUS package with 750V EDT2 technology, ideal for high voltage automotive applications supporting up to 470V battery voltages. It enables easy paralleling, system flexibility and power scalability. Upgrading existing designs with AIKQ120N75CP2 by... [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 7 to 15

• V_CE(on): 750
• t_r: 69

INDUSTRY 14 [See More]

• Package Type: TO-247; TO-247-3

• T_J: -40 to 175

IGBT 2500V 29A 280W Through Hole TO-247HV [See More]

• Package Type: TO-247; TO-247-3 Variant
• Packing Method: Tube

• T_J: -55 to 175

IGBT TrenchStop Nchannel 1.2KV 16A TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1045137-AOK30B135D2. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 240. Mounting Type: Through Hole. Package / Case: TO-247-3. Supplier Device Package: TO-247. Fake Threat In the Open Market: 82 pct. MSL Level: 1... [See More]

• Package Type: TO-247; SOT3

The AIKYX120N75CP2 discrete IGBT in a 4-Pin TO247PLUS package with 750V EDT2 technology is ideal for automotive applications. It supports up to 470V battery voltages, safe fast switching and 30% reduced turn on energy loss compared to 3-pin devices. Its qualified reflow-solderable package enables... [See More]

• Package Type: TO-247; PG-TO247-4
• Switching Speed: 7 to 15

• V_CE(on): 750
• t_r: 27

IGBT TRENCH/FS 600V 160A TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• T_J: -40 to 175

IGBT 1350V 40A 312W Through Hole TO-247 [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: 175

IGBT TrenchStop N-Channel 600V 80A TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1045138-AOK30B65M2. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Series: Alpha IGBT ™. Package: Tube. Standard Package: 30. Power - Max: 300 W. Reverse Recovery Time (trr): 339 ns. Voltage - Collector Emitter Breakdown (Max): 650 V. [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 175

• V_CES: 650

Hard-switching 1200 V, 100 A single TRENCHSTOP ™ IGBT7 S7 discrete in TO-247 package which offers low VCEsat to achieve very low conduction losses in target applications. Summary of Features. Very low Vcesat. Good controllability. Full rated free wheeling diode with improved softness. [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 2 to 20

• V_CE(on): 1200
• t_r: 29

INDUSTRY 14 [See More]

• Package Type: TO-247; TO-247-3

• T_J: -40 to 175

IGBT Field Stop 1200V 50A 348W Through Hole TO-247 [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -40 to 175
• Structure: Field Stop

IGBT N-Ch 1200V 30A DuoPack TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1065603-IRG7PH42UPBF. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 400. Power - Max: 385 W. IGBT Type: Trench. Voltage - Collector Emitter Breakdown (Max): 1200 V. Current - Collector (Ic) (Max): 90 A. Current -... [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 175

• V_CES: 1200

RC Soft Switching 1400 V, 25 A IGBT discrete in a TO-247 3pin package has been designed to fulfill specific requirement of induction cooking applications. With a monolithically integrated diode, the 1400 V Reverse Conducting R5L IGBTs offer a higher breakdown voltage, lower VCEsat and overall lower... [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 10 to 60

• V_CE(on): 1400
• t_f: 965

IGBT 1200V 80A TO247-3-46 [See More]

• Package Type: TO-247; TO-247-3

• T_J: -40 to 175

IGBT TRENCH FS 650V 160A TO247AB [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Bulk

• T_J: -40 to 175
• Structure: Trench Field Stop

IGBT 600V 48A GenX3 Low Vsat 40kHz TO247 [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1065604-IRG7PH42UD1-EP. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 25. Power - Max: 313 W. IGBT Type: Trench. Voltage - Collector Emitter Breakdown (Max): 1200 V. Current - Collector (Ic) (Max): 85 A. Current -... [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 150

• V_CES: 1200

Hard-switching 650 V, 120 A TRENCHSTOP ™ IGBT7 H7 discrete in TO247PLUS-3 package has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations. Summary of Features. Excellent VCE(sat)... [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 16 to 100

• V_CE(on): 650
• t_r: 62

IKW40N65ET7XKSA1 [See More]

• Package Type: TO-247; TO-247-3

• T_J: -40 to 175

IGBT Trench Field Stop 1200V 80A 277W Through Hole TO-247-3 [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube

• T_J: -55 to 150
• Structure: Trench Field Stop

IGBT N-Ch 1200V 66A XPT GenX3 TO247AD [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1065605-IRG7PH42UD1MPBF. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Tube. Standard Package: 25. Power - Max: 313 W. IGBT Type: Trench. Voltage - Collector Emitter Breakdown (Max): 1200 V. Current - Collector (Ic) (Max): 85 A. Current... [See More]

• Package Type: TO-247; SOT3
• T_J: -55 to 150

• V_CES: 1200

Hard-switching 750 V, 200 A EDT2 discrete in TO-247PLUS SMD package technology has been developed to fulfill the demand in CAV applications such as delivery vehicles, trucks and bus drive inverters. The TO-247PLUS SMD package, an upgrade to the existing TO-247PLUS package, enabling package backside... [See More]

• Package Type: TO-247; PG-TO247-3
• Switching Speed: 2 to 15

• V_CE(on): 750
• t_r: 92

IGBT TRENCH [See More]

• Package Type: TO-247; TO-247-3

• T_J: -40 to 175

IGBT DISCRETE,TO-247-4 [See More]

• Package Type: TO-247; TO-247-4
• Packing Method: Tube

• T_J: 175
• Structure: Trench Field Stop

IGBT N-Ch 1200V 100A XPT GenX3 TO247AD [See More]

• Package Type: TO-247; To-247

• Polarity: N-Channel

Win Source Part Number: 1065612-IRGP4263D-EPBF. Category: Discrete Semiconductor Products >Transistors - IGBTs - Single. Package: Bulk. Standard Package: 1. Power - Max: 325 W. Reverse Recovery Time (trr): 170 ns. Voltage - Collector Emitter Breakdown (Max): 650 V. Current - Collector (Ic) (Max):... [See More]

• Package Type: TO-247; SOT3
• T_J: -40 to 175

• V_CES: 650

Karl Kruse  is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

• Package Type: TO-247

• Polarity: N-Channel

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. [See More]

• Package Type: TO-247
• T_J: -55 to 175

• P_D: 111000
• Packing Method: Bulk

375W 60A 650V FS(Field Stop) TO-247 IGBTs ROHS [See More]

• Package Type: TO-247
• P_D: 375000

• V_CES: 650
• T_J: -55 to 175

This family of 1700V IGBTs are rugged NPT devices targeted for high voltage applications, requiring 10us short circuit withstand capability. They are particularly suitable for high voltage switching applications. We offer its fast switching “A ” version 1700V NPT IGBTs in co-pack and... [See More]

• Package Type: TO-247; TO-247
• V_CE(on): 4

• V_CES: 1700
• I_C(max): 20

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. [See More]

• Package Type: TO-247; TO-247GE
• T_J: -55 to 175

• P_D: 111000
• Packing Method: Tube

469W 75A 650V FS(Field Stop) TO-247 IGBTs ROHS [See More]

• Package Type: TO-247
• P_D: 469000

• V_CES: 650
• T_J: -55 to 175

This family of 1700V IGBTs are rugged NPT devices targeted for high voltage applications, requiring 10us short circuit withstand capability. They are particularly suitable for high voltage switching applications. We offer its fast switching “A ” version 1700V NPT IGBTs in co-pack and... [See More]

• Package Type: TO-247; TO-247I
• V_CE(on): 7

• V_CES: 1700
• I_C(max): 5.5

The RGS30TSX2HR is a 10 μs SCSOA guaranteed IGBT, suitable for Heater of Automotive. The RGS series delivers low conduction loss that contributes to reducing size and to improving efficiency of applications. This product complies AEC-Q101 qualification. [See More]

• Package Type: TO-247; TO-247N
• T_J: -55 to 175

• P_D: 267000
• Packing Method: Tube

40A 1.2kV TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

• V_CES: 1200

Designed using the proprietary thin-wafer XPT ™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their... [See More]

• Package Type: TO-247; TO-247HV
• V_CE(on): 4.5

• V_CES: 2500
• I_C(max): 28

333W 80A 1.2kV TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247
• P_D: 333000

• V_CES: 1200

Designed using the proprietary thin-wafer XPT ™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their... [See More]

• Package Type: TO-247; TO-247 PLUS-HV
• V_CE(on): 4

• V_CES: 2500
• I_C(max): 95

TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated... [See More]

• Package Type: TO-247; TO-247
• V_CE(on): 3

• V_CES: 1200
• I_C(max): 22

TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

Utilizing XPT ™ thin-wafer technology and 4th generation (GenX4 ™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A... [See More]

• Package Type: TO-247; TO-247
• V_CE(on): 1.9

• V_CES: 1200
• I_C(max): 106

TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

Developed using our proprietary XPT ™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. These IGBTs have breakdown voltage from 650V till 1200V,... [See More]

• Package Type: TO-247; TO-247U
• V_CE(on): 2

• V_CES: 1200
• I_C(max): 94

290W 80A 600V FS(Field Stop) TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247
• P_D: 290000

• V_CES: 600
• T_J: -55 to 150

Trench Series - 650V XPT ™ (eXtreme-light Punch Through) IGBTs [See More]

• Package Type: TO-247; TO-247
• V_CE(on): 2.5

• V_CES: 1200
• I_C(max): 140

349W 80A 600V FS(Field Stop) TO-247AC-3 IGBTs ROHS [See More]

• Package Type: TO-247
• P_D: 349000

• V_CES: 600
• T_J: -55 to 175

Utilizing XPT ™ thin-wafer technology and 4th generation (GenX4 ™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A... [See More]

• Package Type: TO-247; TO-247 PLUS
• V_CE(on): 1.8

• V_CES: 1200
• I_C(max): 375

268W 100A 650V FS(Field Stop) TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247
• P_D: 268000

• V_CES: 650
• T_J: -55 to 175

Trench Series - 650V XPT ™ (eXtreme-light Punch Through) IGBTs [See More]

• Package Type: TO-247; TO-247 PLUS
• V_CE(on): 2.1

• V_CES: 1200
• I_C(max): 340

TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

Utilizing XPT ™ thin-wafer technology and 4th generation (GenX4 ™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A... [See More]

• Package Type: TO-247; TO-247 PLUS
• V_CE(on): 1.7

• V_CES: 1200
• I_C(max): 480

600W 120A 600V FS(Field Stop) TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247
• P_D: 600000

• V_CES: 600
• T_J: -55 to 175

455W 150A 650V FS(Field Stop) TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247
• P_D: 455000

• V_CES: 650
• T_J: -55 to 175

TO-247-4 IGBTs ROHS [See More]

• Package Type: TO-247

167W 21A 1.2kV NPT( 非 穿 通 型) TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247
• P_D: 167000

• V_CES: 1200
• T_J: -55 to 150

TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

333W 40A 1.35kV TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247
• P_D: 333000

• V_CES: 1350
• T_J: -40 to 175

288W 40A 1.35kV TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247
• P_D: 288000

• V_CES: 1350
• T_J: -40 to 175

TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

TO-247AC-3 IGBTs ROHS [See More]

• Package Type: TO-247