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Supplier: Richardson RFPD
Description: The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
- Output Power: 750 watts
- Power Gain: 19 dB
- Operating Frequency: 0 to 40 MHz
- Transistor Type: MOSFET RF Transistors
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Supplier: Emhiser Research, Inc.
Description: In addition to Emhiser Research, Inc.'s line of miniature RF power amplifiers, Emhiser's acquisition of the military RF power amplifier product line from the former Chesapeake Microwave Corporation allows us to better serve the RF amplifier
- Frequency Range: 1,435 to 2,400 MHz
- Minimum Gain: 1.5 dB
- Maximum Gain: 1.5 dB
- Input VSWR: 1 :1
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Supplier: Richardson RFPD
Description: applications. The amplifier provides a 15 dB of gain with a rising slope, 3.5 dB noise figure, and 29 dBm of output power at 3 dB gain compression with the nominal bias of 235 mA from a 10 V supply. Output IP3 is typically 35 dBm. The MMA052AA amplifier is DC coupled and
- Frequency Range: 0 to 26,000 MHz
- Maximum Gain: 14.5 dB
- Output Power( P1dB): 27 dBm
- Minimum Operating Voltage: 10 volts
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Supplier: Richardson RFPD
Description: consideration, but not guaranteed. This amplifier is suitable for broadband mobile jamming and band specific high power applications in the S and C frequency bands. This compact module utilizes the latest high power RF GaN transistors and also features built-in
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Supplier: Richardson RFPD
Description: The PHA2731-190M is a Class C microwave power amplifier module specifically designed for S-Band radar pulsed power applications where high efficiency and saturated power are required. The module incorporates two in-phase combined common base hybrid power
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Supplier: MACOM
Description: At MACOM we offer a broad range of pulsed and linear RF power transistor products--discrete devices, modules, and pallets designed to operate from DC to 6 GHz. Our high power transistors are ideal for civil avionics, communications, networks, radar, and industrial,
- Power Gain: 11 to 14 dB
- Output Power: 18 to 45 watts
- Operating Frequency: 0 to 4,000 MHz
- Transistor Grade / Operating Range: Commercial, Industrial
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Supplier: MACOM
Description: MACOM is the world’s only provider of GaN on Si technology for RF applications. We offer a broad range of continuous wave (CW) GaN on Si RF power transistor products as discrete devices and modules designed to operate from DC to 6 GHz. Our high power CW and linear
- Power Gain: 9 to 20 dB
- Output Power: 4 to 500 watts
- Operating Frequency: 0 to 6,000 MHz
- Transistor Grade / Operating Range: Commercial, Industrial
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Supplier: DigiKey
Description: RF TRANSISTOR 15W 28V 8QFN
- Frequency Range: 30 to 1,215 MHz
- Minimum Gain: 20.9 dB
- Maximum Gain: 20.9 dB
- Output Power( P1dB): 41.2 dBm
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- VCEO: 30 volts
- IC(max): 300 milliamps
- PD: 200 milliwatts
- TJ: -55 to 150 C
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Supplier: ValueTronics International, Inc.
Description: are very conservatively designed to operate below maximum ratings for ruggedness and long term reliability. Sixth generation LDMOS Transistors provide reliable brute-power performance at frequencies up to 1000 MHz. The CMC-1000 RF power amplifiers feature
- Frequency Range: 1,000 MHz
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Supplier: APITech
Description: The QB-617 is a Class “A” amplifier operating in a communication band of 1930 to 1990MHz to jam communication band frequencies. This addition to API’s power amplifier product line offers a minimum output power of 100 watts with a gain of 50dB, with multiple carrier
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- VCEO: -100 volts
- IC(max): -2,000 milliamps
- PD: 2,000 milliwatts
- TJ: -55 to 150 C
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- VCEO: 60 volts
- IC(max): 1,000 milliamps
- PD: 500 milliwatts
- TJ: -55 to 150 C
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- VCEO: 60 volts
- IC(max): 1,000 milliamps
- PD: 500 milliwatts
- TJ: -55 to 150 C
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- VCEO: -32 volts
- IC(max): -300 milliamps
- PD: 200 milliwatts
- TJ: -55 to 150 C
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features General purpose low noise amplifier for low voltage, low current applications High ESD robustness, typical 1500V (HBM) Low minimum noise figure 1.1 dB at 1.8 GHz High linearity: output compression point OP1dB = 13 dBm @ 3V, 35mA,
- Features: Other, Tape Reel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS) Product overview: 2SC1959 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, F = 1.3 dB at
- Features: Other, Tape Reel
- Package Type: SOT143
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Supplier: Qorvo
Description: The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0060 can be used in Doherty architecture for the final stage of a base station amplifier for small cell, microcell,
- Power Gain: 25 dB
- Operating Frequency: 0 to 3,600 MHz
- Features: Other
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Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power pallet amplifier products designed for applications from1.0 GHz to 3.5 GHz. Our high power pallets are ideal for civil avionics, radar, and industrial, scientific, and medical applications. Our all gold
- Power Gain: 7 to 8 dB
- Operating Frequency: 2,700 to 3,500 MHz
- Output Power: 130 to 300 watts
- Transistor Type: Bipolar RF Transistors
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Supplier: Qorvo
Description: the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier. The device is housed in an industry-standard 4 x 3 mm surface mount QFN package.
- Power Gain: 18.8 dB
- Operating Frequency: 0 to 6,000 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: applications. The amplifier provides a 15 dB of gain with a rising slope, 3.5 dB noise figure, and 27 dBm of output power at 3 dB gain compression with the nominal bias of 235 mA from a 10 V supply. Output IP3 is typically 35 dBm. The MMA052AA amplifier is DC coupled and
- Features: Other
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65170-21 is being discontinued and is not recommended for new designs. The suggested replacement is SKY66295-21 Skyworks SKY65170-21 is a fully-matched, 0.5 W Power Amplifier (PA) with high efficiency, designed for use in the 860 to 960 MHz band. The device is
- Frequency Range: 860 to 960 MHz
- Minimum Gain: 32 dB
- Maximum Gain: 32 dB
- Output Power( P1dB): 18 dBm
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65137-11 is being discontinued and is not recommended for new designs. The suggested replacement is SE5003L Please note: this product is being discontinued and is not recommended for new designs. Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit (MMIC) Power
- Amplifier Type: Power Amplifier
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Supplier: Nexperia B.V.
Description: NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability AEC-Q101 qualified Applications Linear
- hfe: 63 to 250
- VCEO: 80 volts
- IC(max): 1,000 milliamps
- PD: 500 milliwatts
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks SKY85405-11 is a 5 GHz Microwave Monolithic Integrated Circuit (MMIC) power amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY85405-11 ideal for wireless local area network (WLAN) IEEE 802.11ac applications. The SKY85405-11
- Frequency Range: 5,150 to 5,930 MHz
- Features: Other
- Amplifier Type: Power Amplifier
- Package Type: Surface Mount Technology (SMT), Through Hole Technology (THT)
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Supplier: Qorvo
Description: the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0030 can also be used as a driver in a microcell base station power amplifier. The device is housed in an industry-standard 4 x 3 mm surface mount QFN package.
- Power Gain: 22.3 dB
- Operating Frequency: 0 to 5,000 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
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Supplier: Nexperia B.V.
Description: NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability AEC-Q101 qualified Applications Linear
- hfe: 63 to 250
- VCEO: 60 volts
- IC(max): 1,000 milliamps
- PD: 500 milliwatts
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Supplier: Nexperia B.V.
Description: PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability AEC-Q101 qualified Applications Linear
- Polarity: NPN
- Features: Other
- Transistor Type: Power BJT Transistors
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Supplier: Qorvo
Description: Qorvo's SZM-5066Z is a high-linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost, surface-mountable, plastic QFN multi-chip module package. The SZM-5066Z is designed for 802.11a/n in the 4.9GHz to 5.85GHz bands and can operate from a single voltage
- Frequency Range: 5,100 to 5,900 MHz
- Minimum Gain: 33 dB
- Maximum Gain: 33 dB
- Amplifier Type: Power Amplifier
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Supplier: Newark, An Avnet Company
Description: RF POWER TRANSISTOR, 1GHZ, 3.6V, NSOIC-8; Frequency Min:0Hz; Frequency Max:1GHz; Gain:11.6dB; Noise Figure Typ:3.3dB; RF IC Case Style:NSOIC; No. of Pins:8Pins; Supply Voltage Min:-; Supply Voltage Max:3.6V; Product Range:- RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER / Trans RF BJT NPN 6V 0.15A 4-Pin Mini-Mold T/R Product overview: 2SC5288-T1 from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete
- Transistor Type: Bipolar RF Transistors
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65045-70LF is being discontinued and is not recommended for new designs. The suggested replacement are SKY65162-70LF, SKY65173-70LF Skyworks SKY65045-70LF is a high-performance, ultrawideband Power Amplifier (PA) driver with superior output power, low noise,
- Frequency Range: 390 to 1,500 MHz
- Minimum Gain: 14 dB
- Maximum Gain: 14 dB
- Noise Figure: 1.8 dB
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Supplier: Mini-Circuits
Description: Mini-Circuits ZPUL-30P+ utilizes high power LDMOS transistor output stage. Class A operation accept any kind of modulation. The frequency range is so wide (280,000:1) that the amplifier may handle long pulses, 15µsec typ. with very short rise and fall duration 1.1 nsec. typ. Of
- Operating Temperature: -20 to 65 C
- Nominal Impedance: 50 Ohms
- Connectors: BNC
- Package Type: Connectorized
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Supplier: Allied Electronics, Inc.
Description: NTE54 NPN Silicon Complementaryyy Transistor, High Frequency Driver for Audio Amplifier, TO220 Package
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Featured Products Top
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versatile transistor excels in high-temperature environments with a junction temperature range from -65°C to 200°C, ensuring durability and reliable performance. Its versatility makes it an ideal choice for use in RF circuits, power regulation, switching applications, and more. Designed with (read more)
Browse RF Transmitters Datasheets for LIXINC Electronics Co., Limited -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
Family of RF Power Macro GaN Transistors from NXP (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
perform optimally in customer-specific circuits and improve your production yields. Also, several RF and DC power circuits can be improved if the transistors are DC matched for specific characteristics. Let Richardson RFPD perform this testing for you, and ensure you are only purchasing product that will work in your system (read more)
Browse RF Transistors Datasheets for Richardson RFPD -
available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
-pull amplifiers, and RF power amplifiers. Power amplifiers are typically found in the final output stages of a circuit. There are five classes of power amplifiers: Class A, B, AB, C, and D. Let’s take a look at the characteristics of each. Class A power amplifiers’ (read more)
Browse RF Amplifiers Datasheets for ASAP Semiconductor LLC -
experienced in the design and development of high power amplifier modules and systems for C-UAS and EW. UAS represent a rapidly growing, low-cost, high-reward surveillance and attack threat to military and civilian personnel and infrastructure (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD
Conduct Research Top
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AN721: Impedance Matching Networks Applied to RF Power Transistors, Courtesy of Motorola
be considered as a corollary of the matching circuit. Matching is necessary for the best possible energy transfer from stage to stage. In RF-power transistors the input impedance is of low value, decreasing as the power increases, or as the chip size becomes larger. This impedance must be matched
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Microwave RF: GaN Devices Raising the Output-Power Performance Bar
Solid-state power comes in many forms, although the fastest-growing high-frequency, high-power semiconductor technology may be based on gallium nitride (GaN). GaN power transistors have long been the active-device building blocks for linear and compressed power amplifiers in L- and S-band military
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
licensing objectives. Xemod is a privately held, fabless maker of RF power amplifier modules and components based on lateral double-diffused transistor (LDMOS) technology. The company is based in Tempe, Arizona. Nvidia's profits plunge on soaring sales SANTA CLARA, Calif. -- Profits at graphics chip
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Class E high-efficiency tuned power oscillator
RF power tran- sistor amplifier ,” .
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Stability problems in transistor power amplifiers
Most RF transistor power amplifiers are oper- ating in the frequency range D which isagain uncondition- ally stable (stability factor S> 1).
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Class-E amplifier with an inductive impedance inverter
J. Ebert and M. Kazimierczuk, “High efficiency RF power transistor amplifier ,” Bull.
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Class-E DC/DC converters with a capacitive impedance inverter
J. Ebert and M. Kazimierczuk, “High efficiency RF power transistor amplifier ,” Bull.
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A Wideband Balun for HF, VHF, and UHF Applications
[4] O. Pitzalis and T. P. M. Couse, “Broadband transformer design for RF transistor power amplifiers ,” in Proc.
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Reliability of polynomial I/sub DS/-V/sub GS/-V/sub DS/ model fitted using harmonic-balance simulation
However, the fitting of IDS-VGS-VDS cur- rent source of LDMOS RF power transistor amplifier suffers from high correlation between controlling voltages VGS and VDS.
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Exact analysis of class E tuned power amplifier at any Q and switch duty cycle
J. Ebert and M. Kazimierczuk, “High efficiency RF power tran- sistor amplifier ,” Bull.
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Collector amplitude modulation of the class E tuned power amplifier
J. Ebert and M. Kazimierczuk, “High efficiency RF power transis- tor amplifier ,” Bull.
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A PISO JCCD filter with high-speed linear charge injection
“High efficiency RF power tran- sistor amplifier ;’ .
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Effects of the collector current fall time on the class E tuned power amplifier
“High efficiency RF power tran- sistor amplifier ;’ .