Ac128 Germanium Pnp Transistors

Description: SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH FREQUENCY, 25 MILLIWATT, TYPE JAN-2N128

Description: Semiconductor Device, Transistor, PNP, Germanium, High Frequency, 25 Milliwatt, Type JAN-2N128

Description: Manufacturer: Central Semiconductor Corp Win Source Part Number: 110213-MMPQ6502 TR13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: 2 NPN, 2 PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating:

• T_J: -55 to 150 C
• Power Gain: 30 dB
• Operating Frequency: 200 MHz
• Polarity: NPN, PNP

Description: Small Signal Bipolar Transistor, 0.1A, 50V, 2-Element, NPN and PNP, SC-88

• Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
• Polarity: NPN, PNP
• Features: Other, Tape Reel

Description: Transistor GP BJT PNP 25V 1.5A TO92-3

• Transistor Type: General Purpose BJT
• Features: Other
• Polarity: PNP
• Package Type: TO-92

Description: 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device

• I_C(max): 100 milliamps
• Power Gain: 35 dB
• Output Power: 0.25 watts
• Transistor Type: Bipolar RF Transistors, General Purpose BJT

Description: mA Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23

• I_C(max): 600 milliamps
• T_J: 150 C
• Power Gain: 100 dB
• Operating Frequency: 200 MHz

Description: Manufacturer: ON Semiconductor Win Source Part Number: 1193529-KSA1381ES Packaging: Bulk Mounting Style: Through Hole Transistor Type: PNP Frequency - Transition: 150MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-126-3 Status: Obsolete Temperature Range -

• T_J: -55 to 150 C
• Power Gain: 100 dB
• Output Power: 7 watts
• Operating Frequency: 150 MHz

Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 8A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 8A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports

• P_D: 2,000 milliwatts
• T_J: -65 to 150 C
• Transistor Type: Bipolar RF Transistors, Darlington
• Features: Other

Description: PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and soldarable side pads. Features and benefits General-purpose transistors Three current gain selections Low package height of 0.37 mm

• h_fe: 420 to 800
• V_CEO: -45 volts
• I_C(max): -100 milliamps
• P_D: 280 milliwatts

Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 0.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports

• P_D: 625 milliwatts
• T_J: -55 to 150 C
• Transistor Type: Bipolar RF Transistors, Darlington
• Features: Other

Description: PNP Darlington transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCV47 Features and benefits High current High current gain AEC-Q101 qualified Applications For general AF applications and where high amplification is required

• h_fe: 4,000
• I_C(max): -500 milliamps
• P_D: 250 milliwatts
• Transistor Type: Darlington

Description: PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 65 V) Applications General-purpose switching and amplification

• h_fe: 220 to 475
• I_C(max): -100 milliamps
• P_D: 200 milliwatts
• T_J: 150 C

Description: PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complements: BCW66F/G/H. Features and benefits High current AEC-Q101 qualified Applications General-purpose switching and amplification

• h_fe: 160 to 400
• V_CEO: -45 volts
• I_C(max): -800 milliamps
• P_D: 250 milliwatts

Description: Transistor, PNP, -140V, -20.00A, TO-3

• V_CEO: -140 volts
• I_C(max): -20,000 milliamps
• Transistor Type: General Purpose BJT
• Features: Other, Tray

Description: RF TRANS PNP 20V 600MHZ SOT23

• I_C(max): 50 milliamps
• V_CEO: 20 volts
• Operating Frequency: 600 MHz
• Output Power: 0.225 watts

Description: Darlington Transistors PNP Epitaxial Sil Darl Product overview: TIP117TU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers

• Transistor Type: MOSFET
• Features: Other
• Polarity: PNP

Description: Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN Product overview: JANTX2N6287 from Microsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level

• P_D: 175,000 milliwatts
• T_J: -65 C
• Transistor Type: MOSFET
• Polarity: PNP

Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 100mA 250MHz 200mW Surface Mount UMT3F

• Transistor Grade / Operating Range: Automotive
• Features: Other
• Polarity: PNP

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX53

• I_C(max): 1,000 milliamps
• V_CEO: 80 volts
• V_CBO: 100 volts
• Transistor Type: Bipolar RF Transistors

Description: Bipolar (BJT) Transistor PNP 30V 3A 400MHz 1W Surface Mount 6-MCPH

• Features: Other
• Polarity: PNP

Description: PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101

• V_CEO: 50 volts
• V_CBO: 50 volts
• f_T: 150 MHz
• h_fe: 70

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications For AF input stages

• I_C(max): 100 milliamps
• V_CEO: 30 volts
• V_CBO: 30 volts
• f_T: 250 MHz

Description: Bipolar (BJT) Transistor Array NPN, PNP 40V 600mA 600mW Through Hole TO-78-6

• Transistor Grade / Operating Range: Military
• Polarity: NPN, PNP
• Features: Other

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Fast Switching Transistor // SMBT3906S

• I_C(max): 200 milliamps
• V_CEO: 40 volts
• V_CBO: 40 volts
• Transistor Type: Bipolar RF Transistors

Description: Trans GP BJT PNP 25V 12A

• I_C(max): 12,000 milliamps
• P_D: 36,000 milliwatts
• T_J: 150 C
• Transistor Type: Darlington

Description: Bipolar (BJT) Single Transistor, BRT, PNP, 50 V, 180 MHz, 250 mW, 100 mA, 100 RoHS Compliant: Yes

Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available

• h_fe: 175
• V_CEO: 40 volts
• V_CBO: 60 volts
• I_C(max): 600 milliamps

Description: 30000@2V,20mA 30V PNP 1A 625mW TO-92-3 Darlington Transistors ROHS

• h_fe: 30,000
• V_CEO: 30 volts
• I_C(max): 1,000 milliamps
• f_T: 200 MHz

Description: Trans GP BJT PNP 100V 5A 3-Pin TO-39

• I_C(max): 5,000 milliamps
• P_D: 1,000 milliwatts
• T_J: -65 to 200 C
• Number of Transistors in the Chip: 1

Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.

• V_CEO: -12 volts
• I_C(max): -500 milliamps
• T_J: -55 to 150 C
• Transistor Grade / Operating Range: Commercial

Description: 2SAR514P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.

• T_J: -55 to 150 C
• Transistor Grade / Operating Range: Commercial
• Features: Other, Tape Reel
• Polarity: PNP

Description: TRANSISTOR; TO-92; PNP; 40; 40; 5.0; 200 COLLECTOR; -55 TO +155; 40 VDC (MIN.)

Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the

• h_fe: 50 to 75
• V_CEO: 36 volts
• V_CBO: -36 to -40 volts
• I_C(max): -10 to -20 milliamps

Description: The LS358 Log Conformance, Monolithic Dual, PNP Transistor is a direct replacement for Micro Power Systems MP358 Series. It is ideal for Log Conformance, Transistor Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC 8L ROHS, and

• Transistor Type: General Purpose BJT
• Features: Other
• Polarity: PNP