Ac128 Germanium Pnp Transistors

Description: SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH FREQUENCY, 25 MILLIWATT, TYPE JAN-2N128

Description: Semiconductor Device, Transistor, PNP, Germanium, High Frequency, 25 Milliwatt, Type JAN-2N128

Description: PNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC846BS NPN/PNP complement: BC846BPN Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current

• h_fe: 200 to 450
• V_CEO: -65 volts
• I_C(max): -100 milliamps
• P_D: 200 milliwatts

Description: PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 65 V) Applications General-purpose switching and amplification

• h_fe: 220 to 475
• I_C(max): -100 milliamps
• P_D: 200 milliwatts
• T_J: 150 C

Description: 30 V, 100 mA PNP general purpose transistor

• h_fe: 420 to 800
• V_CEO: 30 volts
• I_C(max): 100 milliamps
• P_D: 200 milliwatts

Description: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

• Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
• Features: Other, Tape Reel
• Polarity: PNP

Description: Manufacturer: ON Semiconductor Win Source Part Number: 1124453-2SA1419T-TD-E Packaging: Reel - TR Operating Temperature Range: 150°C (TJ) Package: TO-243AA Mounting: SMD Power - Max: 500mW Transistor Type: PNP Frequency - Transition: 120MHz Family Name: 2SA1419T Categories: Discrete

• I_C(max): 0.001 milliamps
• Power Gain: 100 dB
• Operating Frequency: 120 MHz
• Output Power: 0.5 watts

Description: 50 V Current - Collector (Ic) (Max): 500 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Frequency - Transition: 140 MHz Supplier Device Package:

• I_C(max): 500 milliamps
• Power Gain: 70 dB
• Operating Frequency: 140 MHz
• Output Power: 0.32 watts

Description: Transistor Digital PNP 50V 100mA SOT-23

• Number of Transistors in the Chip: 1
• Transistor Type: General Purpose BJT
• Features: Other
• Polarity: PNP

Description: Win Source Part Number: 1382878-MD7003 Category: Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Bipolar Transistor Arrays Package: Bulk Standard Package: 1 pcs Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 50mA Transistor Type: 2

• I_C(max): 50 milliamps
• Power Gain: 40 dB
• Operating Frequency: 200 MHz
• Transistor Type: Bipolar RF Transistors, General Purpose BJT

Description: Manufacturer: ON Semiconductor Win Source Part Number: 011153-BC857BDW1T1G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: 2 PNP (Dual) Family Name: BC857BDW1 Categories: Discrete Semiconductor Products Status: Active Temperature Range -

• V_CEO: 45 volts
• I_C(max): 100 milliamps
• P_D: 380 milliwatts
• T_J: -55 to 150 C

Description: Transistor, PNP, -60V, -1.00A, SOT-89-3L

• V_CEO: -60 volts
• I_C(max): -1,000 milliamps
• Transistor Type: General Purpose BJT
• Features: Other, Shipping Tube / Stick Magazine

Description: Darlington Transistors SOT23 PNP DARLINGTON Product overview: BCV26 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing

• Transistor Type: MOSFET
• Features: Other
• Polarity: PNP

Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 8A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 8A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports

• P_D: 2,000 milliwatts
• T_J: -65 to 150 C
• Transistor Type: Bipolar RF Transistors, Darlington
• Features: Other

Description: PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and soldarable side pads. Features and benefits General-purpose transistors Three current gain selections Low package height of 0.37 mm

• h_fe: 420 to 800
• V_CEO: -45 volts
• I_C(max): -100 milliamps
• P_D: 280 milliwatts

Description: Trans GP BJT PNP 40V 1A 485mW 3-Pin MPAK / IC MOSFET DRIVER SC-59A Product overview: PMD5003K from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and

• Transistor Type: MOSFET
• Features: Other
• Polarity: PNP

Description: Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN Product overview: JANTX2N6287 from Microsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level

• P_D: 175,000 milliwatts
• T_J: -65 C
• Transistor Type: MOSFET
• Polarity: PNP

Description: Bipolar (BJT) Transistor PNP 30V 3A 400MHz 1W Surface Mount 6-MCPH

• Features: Other
• Polarity: PNP

Description: PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101

• V_CEO: 50 volts
• V_CBO: 50 volts
• f_T: 150 MHz
• h_fe: 70

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX53

• I_C(max): 1,000 milliamps
• V_CEO: 80 volts
• V_CBO: 100 volts
• Transistor Type: Bipolar RF Transistors

Description: Bipolar (BJT) Transistor Array NPN, PNP 40V 600mA 600mW Through Hole TO-78-6

• Transistor Grade / Operating Range: Military
• Polarity: NPN, PNP
• Features: Other

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Fast Switching Transistor // SMBT3906S

• I_C(max): 200 milliamps
• V_CEO: 40 volts
• V_CBO: 40 volts
• Transistor Type: Bipolar RF Transistors

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications For AF input stages

• I_C(max): 100 milliamps
• V_CEO: 30 volts
• V_CBO: 30 volts
• f_T: 250 MHz

Description: TRANSISTOR,BJT,PNP,30V V(BR)CEO,100MA I(C),TO-92 ROHS COMPLIANT: YES

Description: Bipolar Transistors - BJT 1A

• V_CEO: 60 volts
• I_C(max): 1,000 milliamps
• P_D: 300 milliwatts
• T_J: -55 to 150 C

Description: RF TRANS PNP 12V 8.5GHZ SOT23

• I_C(max): 50 milliamps
• V_CEO: 12 volts
• Power Gain: 12 dB
• Noise Figure: 1.5 dB

Description: BIP T0218 PNP 10A 100V

Description: Trans GP BJT PNP 60V 1A 3-Pin(3+Tab) TO-202

• I_C(max): 1,000 milliamps
• P_D: 2,000 milliwatts
• T_J: 150 C
• Transistor Type: Darlington

Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the

• h_fe: 50 to 75
• V_CEO: 36 volts
• V_CBO: -36 to -40 volts
• I_C(max): -10 to -20 milliamps

Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available

• h_fe: 450
• V_CEO: 60 volts
• V_CBO: 60 volts
• I_C(max): 600 milliamps

Description: Small signal bipolar junction transistor

• h_fe: 300
• V_CEO: 40 volts
• I_C(max): 200 milliamps
• f_T: 250 MHz

Description: 2SAR574D3FRA is a power transistor with Low VCE(sat), suitable for low frequency amplifier.

• P_D: 10,000 milliwatts
• T_J: -55 to 150 C
• Transistor Grade / Operating Range: Commercial
• Features: Other, Tape Reel

Description: 2SAR544P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.

• T_J: -55 to 150 C
• Transistor Grade / Operating Range: Commercial
• Features: Other, Tape Reel
• Polarity: PNP

Description: The IT130A Series Monolithic Dual, PNP Transistor is a direct replacement for Intersil IT130 Series. It is ideal for Small Signal Transistor Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC 8L ROHS, and Tested Die. All Linear

• Transistor Type: General Purpose BJT
• Features: Other
• Polarity: PNP

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and

• Transistor Type: General Purpose BJT
• Polarity: NPN, PNP