Ac128 Germanium Pnp Transistors

Description: SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH FREQUENCY, 25 MILLIWATT, TYPE JAN-2N128

Description: Semiconductor Device, Transistor, PNP, Germanium, High Frequency, 25 Milliwatt, Type JAN-2N128

Description: Manufacturer: Microsemi Corporation Win Source Part Number: 1191389-JAN2N3792 Series: Military, MIL-PRF-19500/379 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-3 Power - Max: 5W Transistor Type: PNP Family Name: 2N3792

• T_J: -65 to 200 C
• Power Gain: 30 dB
• Output Power: 5 watts
• Features: Bulk Pack, Other

Description: Manufacturer: Rohm Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1056435-DTA144TSATP Current Rating: -100 mA Mounting: SMD (SMT) Polarity: PNP Categories: RF Transistors(BJT) Case / Package: SC Popularity: Low Fake Threat In

• T_J: -55 C
• Output Power: 0.3 watts
• Operating Frequency: 250 MHz
• Features: Other

Description: Manufacturer: ON Semiconductor Win Source Part Number: 1123674-2N2905 Packaging: Bulk Mounting Style: Through Hole Transistor Type: PNP Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Status: Obsolete Manufacturer Homepage: www.nxp.com Manufacturer Package:

• Power Gain: 100 dB
• Output Power: 0.6 watts
• Features: Bulk Pack, Other
• Polarity: PNP

Description: Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3 (TO-204AA) Temperature Range -

• I_C(max): 30,000 milliamps
• T_J: -55 to 200 C
• Power Gain: 15 dB
• Output Power: 5 watts

Description: Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN Product overview: JANTX2N6287 from Microsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level

• P_D: 175,000 milliwatts
• T_J: -65 C
• Transistor Type: MOSFET
• Polarity: PNP

Description: BJT,PNP,dual,matched,65V,100mA,SOT457

• Transistor Type: General Purpose BJT
• Features: Other
• Polarity: PNP

Description: Trans Darlington PNP 100V 0.8A SOT23

• Number of Transistors in the Chip: 1
• Transistor Type: Darlington
• Features: Other
• Polarity: PNP

Description: Bipolar Transistor, 60V, 4A, PNP

• Transistor Type: Bipolar RF Transistors
• Features: Other
• Polarity: PNP
• Package Type: TO-220

Description: PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX19 Features and benefits High current (max. 500 mA) Low voltage (max. 45 V) AEC-Q101 qualified Applications Saturated switching and driver applications e.g. for industrial

• h_fe: 100 to 600
• V_CEO: -45 volts
• I_C(max): -500 milliamps
• P_D: 250 milliwatts

Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 45V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 45V, 1A, Bipolar Transistor, Single Bipolar Transistors. This listing

• P_D: 1,500 milliwatts
• T_J: 150 C
• Transistor Type: Bipolar RF Transistors, Darlington
• Features: Other

Description: PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 65 V) Applications General-purpose switching and amplification

• h_fe: 220 to 475
• I_C(max): -100 milliamps
• P_D: 200 milliwatts
• T_J: 150 C

Description: PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space

• h_fe: 110
• V_CEO: -65 volts
• I_C(max): -100 milliamps
• P_D: 220 milliwatts

Description: Transistor, PNP, 300mA, 50V, 420-800hFE, SOT-23

• V_CEO: 50 volts
• I_C(max): 300 milliamps
• Transistor Type: General Purpose BJT
• Features: Other, Tape Reel

Description: Darlington Transistors PNP Epitaxial Sil Darl Product overview: TIP117TU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers

• Transistor Type: MOSFET
• Features: Other
• Polarity: PNP

Description: Trans GP BJT PNP 40V 1A 485mW 3-Pin MPAK / IC MOSFET DRIVER SC-59A Product overview: PMD5003K from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and

• Transistor Type: MOSFET
• Features: Other
• Polarity: PNP

Description: PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and soldarable side pads. Features and benefits General-purpose transistors Three current gain selections Low package height of 0.37 mm

• h_fe: 420 to 800
• V_CEO: -45 volts
• I_C(max): -100 milliamps
• P_D: 280 milliwatts

Description: Bipolar (BJT) Transistor PNP 30V 6A 180MHz 1W Surface Mount HUML2020L3

• Features: Other
• Polarity: PNP

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications For AF input stages

• I_C(max): 100 milliamps
• V_CEO: 30 volts
• V_CBO: 30 volts
• f_T: 250 MHz

Description: PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101

• V_CEO: 50 volts
• V_CBO: 50 volts
• f_T: 150 MHz
• h_fe: 70

Description: Bipolar (BJT) Transistor Array NPN, PNP 40V 600mA 600mW Through Hole TO-78-6

• Transistor Grade / Operating Range: Military
• Polarity: NPN, PNP
• Features: Other

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Fast Switching Transistor // SMBT3906S

• I_C(max): 200 milliamps
• V_CEO: 40 volts
• V_CBO: 40 volts
• Transistor Type: Bipolar RF Transistors

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX53

• I_C(max): 1,000 milliamps
• V_CEO: 80 volts
• V_CBO: 100 volts
• Transistor Type: Bipolar RF Transistors

Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the

• h_fe: 50 to 75
• V_CEO: 36 volts
• V_CBO: -36 to -40 volts
• I_C(max): -10 to -20 milliamps

Description: Trans GP BJT PNP 120V 25A 3-Pin(2+Tab) TO-3

• I_C(max): 25,000 milliamps
• P_D: 200,000 milliwatts
• T_J: 125 C
• Transistor Type: Darlington

Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available

• h_fe: 175
• V_CEO: 60 volts
• V_CBO: 60 volts
• I_C(max): 600 milliamps

Description: 2SAR583D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier. It is a highly reliable product for automotive.

• P_D: 10,000 milliwatts
• T_J: -55 to 150 C
• Transistor Grade / Operating Range: Commercial
• Features: Other, Tape Reel

Description: The LS3550 Monolithic Dual and Single, PNP Transistor is a Higher Current Version of the MP350, MP 351, and MP352 Series. It is ideal for Small Signal Transistor, Super Beta Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC 8L

• Transistor Type: General Purpose BJT
• Features: Other
• Polarity: PNP
• Package Type: SOT23

Description: NXP PBHV9040XBipolar (BJT) Single Transistor, PNP, -400 V, 55 MHz, 1.5 W, -250 mA, 10

• Transistor Type: Bipolar RF Transistors, General Purpose BJT
• Polarity: PNP

Description: Silicon Complementary Transistor Audio Power Amplifier, PNP Transistor Type +150 °C maximum operating temperature Designed for use in high power, high fidelity audio frequency amplifier applications.

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and

• Transistor Type: General Purpose BJT
• Polarity: PNP
• Package Type: SOT23

Description: Bipolar (BJT) Single Transistor, General Purpose, PNP, -60 V, 75 MHz, 800 mW, -2 A, 40 RoHS Compliant: Yes

Description: RF TRANS PNP 12V 4GHZ SOT323-3

• I_C(max): 50 milliamps
• V_CEO: 12 volts
• Noise Figure: 2.4 dB
• Operating Frequency: 4,000 MHz

Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

• V_CEO: -100 volts
• I_C(max): -2,000 milliamps
• P_D: 1,000 milliwatts
• T_J: -55 to 150 C