Ac128 Germanium Pnp Transistors

Description: SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH FREQUENCY, 25 MILLIWATT, TYPE JAN-2N128

Description: Semiconductor Device, Transistor, PNP, Germanium, High Frequency, 25 Milliwatt, Type JAN-2N128

Description: PNP/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC846BS NPN/PNP complement: BC846BPN Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current

• h_fe: 200 to 450
• V_CEO: -65 volts
• I_C(max): -100 milliamps
• P_D: 200 milliwatts

Description: package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor,

• P_D: 580 milliwatts
• T_J: -65 C
• Transistor Type: MOSFET
• Polarity: NPN, PNP

Description: PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 65 V) Applications General-purpose switching and amplification

• h_fe: 220 to 475
• I_C(max): -100 milliamps
• P_D: 200 milliwatts
• T_J: 150 C

Description: 30 V, 100 mA PNP general purpose transistor

• h_fe: 420 to 800
• V_CEO: 30 volts
• I_C(max): 100 milliamps
• P_D: 200 milliwatts

Description: Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

• Transistor Type: Bipolar RF Transistors, Power BJT Transistors, Power MOSFET
• Features: Other, Tape Reel
• Polarity: PNP

Description: Win Source Part Number: 998716-BC488BRL1G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel (TR) Standard Package: 2,000 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 1 A

• I_C(max): 1,000 milliamps
• T_J: -55 to 150 C
• Power Gain: 160 dB
• Operating Frequency: 150 MHz

Description: PNP Transistor (-80V / -2.5A)

• Transistor Type: General Purpose BJT
• Features: Other
• Polarity: PNP
• Package Type: SOT89

Description: Manufacturer: Diodes Incorporated Win Source Part Number: 011140-BC856AS-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: 2 PNP (Dual) Family Name: BC856AS Categories: Discrete Semiconductor Products Status: Active Temperature Range -

• V_CEO: 65 volts
• I_C(max): 100 milliamps
• P_D: 200 milliwatts
• T_J: -65 to 150 C

Description: Transistor Type: 2 PNP (Dual) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6 Temperature

• I_C(max): 50 milliamps
• T_J: -65 to 200 C
• Power Gain: 150 dB
• Output Power: 0.35 watts

Description: Manufacturer: Diodes Incorporated Win Source Part Number: 011118-BC847BVN-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz, 200MHz Transistor Polarity: NPN, PNP Family Name: BC847BVN Categories: Discrete Semiconductor Products Status: Active Temperature Range -

• V_CEO: 45 volts
• I_C(max): 100 milliamps
• P_D: 150 milliwatts
• T_J: -65 to 150 C

Description: Transistor, PNP, Dual, -0.1A, -80V, SOT-363

• V_CEO: -80 volts
• I_C(max): -100 milliamps
• Transistor Type: General Purpose BJT
• Features: Other, Tape Reel

Description: Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN Product overview: JANTX2N6287 from Microsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level

• P_D: 175,000 milliwatts
• T_J: -65 C
• Transistor Type: MOSFET
• Polarity: PNP

Description: PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX19 Features and benefits High current (max. 500 mA) Low voltage (max. 45 V) AEC-Q101 qualified Applications Saturated switching and driver applications e.g. for industrial

• h_fe: 100 to 600
• V_CEO: -45 volts
• I_C(max): -500 milliamps
• P_D: 250 milliwatts

Description: Trans GP BJT PNP 40V 1A 485mW 3-Pin MPAK / IC MOSFET DRIVER SC-59A Product overview: PMD5003K from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and

• Transistor Type: MOSFET
• Features: Other
• Polarity: PNP

Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 8A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 8A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports

• P_D: 2,000 milliwatts
• T_J: -65 to 150 C
• Transistor Type: Bipolar RF Transistors, Darlington
• Features: Other

Description: Bipolar (BJT) Transistor PNP 30V 3A 400MHz 1W Surface Mount 6-MCPH

• Features: Other
• Polarity: PNP

Description: PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101

• V_CEO: 50 volts
• V_CBO: 50 volts
• f_T: 150 MHz
• h_fe: 70

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications For AF input stages

• I_C(max): 100 milliamps
• V_CEO: 30 volts
• V_CBO: 30 volts
• f_T: 250 MHz

Description: Bipolar (BJT) Transistor Array NPN, PNP 40V 600mA 600mW Through Hole TO-78-6

• Transistor Grade / Operating Range: Military
• Polarity: NPN, PNP
• Features: Other

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Fast Switching Transistor // SMBT3906S

• I_C(max): 200 milliamps
• V_CEO: 40 volts
• V_CBO: 40 volts
• Transistor Type: Bipolar RF Transistors

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX53

• I_C(max): 1,000 milliamps
• V_CEO: 80 volts
• V_CBO: 100 volts
• Transistor Type: Bipolar RF Transistors

Description: Trans GP BJT NPN/PNP 40V 0.6A Automotive 6-Pin TSOP T/R

• I_C(max): 600 milliamps
• P_D: 540 milliwatts
• T_J: -65 to 150 C
• Number of Transistors in the Chip: 2

Description: Bipolar (BJT) Array Transistor, NPN, PNP, 40 V, 330 mW, 1 A, 450, SuperSOT RoHS Compliant: Yes

Description: TO-39 Package Type, Small Signal PNP Transistors Silicon planar epitaxial PNP transistors in Jedec TO-39 metal case. They are designed for high speed saturated switching and general purpose applications.

Description: Trans GP BJT PNP 60V 1A 3-Pin(3+Tab) TO-202

• I_C(max): 1,000 milliamps
• P_D: 2,000 milliwatts
• T_J: 150 C
• Transistor Type: Darlington

Description: RF TRANS PNP 30V 30MA TO72

• I_C(max): 30 milliamps
• V_CEO: 30 volts
• Power Gain: 25 dB
• Noise Figure: 3.5 dB

Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the

• h_fe: 50 to 75
• V_CEO: 36 volts
• V_CBO: -36 to -40 volts
• I_C(max): -10 to -20 milliamps

Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available

• h_fe: 450
• V_CEO: 60 volts
• V_CBO: 60 volts
• I_C(max): 600 milliamps

Description: Small signal bipolar junction transistor

• h_fe: 300
• V_CEO: 40 volts
• I_C(max): 200 milliamps
• f_T: 250 MHz

Description: 2SAR574D3FRA is a power transistor with Low VCE(sat), suitable for low frequency amplifier.

• P_D: 10,000 milliwatts
• T_J: -55 to 150 C
• Transistor Grade / Operating Range: Commercial
• Features: Other, Tape Reel

Description: 2SAR544P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.

• T_J: -55 to 150 C
• Transistor Grade / Operating Range: Commercial
• Features: Other, Tape Reel
• Polarity: PNP

Description: The IT130A Series Monolithic Dual, PNP Transistor is a direct replacement for Intersil IT130 Series. It is ideal for Small Signal Transistor Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC 8L ROHS, and Tested Die. All Linear

• Transistor Type: General Purpose BJT
• Features: Other
• Polarity: PNP

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and

• Transistor Type: General Purpose BJT
• Polarity: NPN, PNP