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Supplier: Elite Semiconductor Products, Inc.
Description: High Voltage Power Diodes Standard and Ultra-Fast
- VF: 12 volts
- IF: 500 mA
- IR: 0.0005 mA
- trr: 40 ns
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Supplier: Elite Semiconductor Products, Inc.
Description: High Voltage Power Diodes Standard and Ultra-Fast
- VF: 10 volts
- IF: 500 mA
- IR: 0.0003 mA
- VRRM: 10,000 volts
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Supplier: Newark, An Avnet Company
Description: HIGH CURRENT PTVS DIODE ROHS COMPLIANT: YES
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Supplier: Voltage Multipliers, Inc.
Description: K-series – High voltage, high current epoxy diodes. 1.5 Amps to 3.0 Amps, 100nS, 200nS, 3000nS. VMI offers the most complete range of MIL qualified, high voltage, axial-leaded diodes in the world. To insure that our customers receive the highest quality
- VF: 6.5 volts
- IF: 3,000 mA
- VR: 2,500 volts
- IR: 0.002 to 0.1 mA
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Supplier: Newark, An Avnet Company
Description: HIGH-SIDE CURRENT MONITOR, 5-SOT-23; Quiescent Current:-; Bandwidth:-; Sensor Case Style:SOT-23; No. of Pins:5Pins; Supply Voltage Min:2.5V; Supply Voltage Max:20V; Operating Temperature Min:-40°C; Operating Temperature Max:85°C RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: High Current Bidirectional TVS Diode
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Supplier: Elite Semiconductor Products, Inc.
Description: HIGH CURRENT PLASTIC RECTIFIER
- VF: 0.9 to 1.25 volts
- IF: 6,000 to 100,000 mA
- VR: 50 volts
- IR: 0.005 to 1 mA
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Supplier: Elite Semiconductor Products, Inc.
Description: High Current Axial Plastic Rectifiers
- VF: 0.9 to 1.25 volts
- IF: 6,000 to 100,000 mA
- VR: 100 volts
- IR: 0.025 to 1 mA
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Supplier: Semtech Corp.
Description: Semtech's product portfolio provides protection to GR-1089, both for intra-building (short-haul) and inter-building (long-haul), IEC 61000-4-5 (Lightning), and ITU-T K20 & K40. Our products integrate low capacitance, surge-rated compensation diodes with high power transient voltage
- Peak Pulse Power: 40 to 2,500.0000000000005 watts
- VWM: 2.5 to 70 volts
- IPPM: 0.0000001 to 0.000025 amps
- CT: 0.5 to 50 pF
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Supplier: Nexperia B.V.
Description: Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines. Features
- VR: 13 volts
- Features: Other, Power Diode, Protector
- RoHS Compliant: RoHS Compliant
- Package: SOT23
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Supplier: Nexperia B.V.
Description: Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The device is designed for ESD and transient overvoltage protection of up to two signal lines. Features
- Features: Other, Power Diode, Protector
- Package: SOT23
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Supplier: Micross Components, Inc.
Description: Micross offers catalog epoxy encapsulated rectifier assemblies (modules) and non-encapsulated, higher power density, open frame construction assemblies (ISOPACs). This section contains high current, single phase half wave rectifiers. With off-the-shelf voltage ratings as high as
- IF: 40,000 mA
- VR: 1,000 volts
- trr: 150 ns
- IFSM: 500 amps
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Supplier: TE Connectivity
Description: Contact Features High Current Automotive Relay Contact Arrangement : 1 Form A (NO) High Current Automotive Relay Contact Current Class : 200A Electrical Characteristics Coil Suppression : Diode (Cathode 86) High Current Automotive Relay Coil
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Supplier: Newark, An Avnet Company
Description: HIGH-SIDE CURRENT MONITOR, -40TO85DEG C ROHS COMPLIANT: YES
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Supplier: Chief Enterprises LLC
Description: Relay, 12V, 75A, Dual Contact, Dual Diode
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Supplier: Frontier Electronics Corp.
Description: turn prototypes and small production runs Redesigning of obsolete products to facilitate current manufacturing standards
- VF: 2 to 16 volts
- IF: 200 to 750 mA
- VR: 1,000 to 20,000 volts
- IR: 0.005 mA
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Supplier: Nexperia B.V.
Description: High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits High switching speed: trr ≤ 50 ns Low leakage current Reverse voltage VR ≤ 200 V Low capacitance: Cd ≤ 5 pF Small SMD plastic package
- VF: 1,000 to 1 volts
- IF: 200 mA
- VR: 200 volts
- IR: 0.0001 mA
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Supplier: Frontier Electronics Corp.
Description: Designed for short protection in microwave ovens and other high voltage equipment. Designed as a short protector for use in microwave ovens and other high voltage equipment Maximum reverse current: 10μA
- VR: 1,500 to 6,000 volts
- IR: 0.01 mA
- VRRM: 1,500 to 6,000 volts
- Diode Applications: High Voltage, Protector
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Supplier: Sensata Technologies
Description: Symbol M5060 M50100
- VRRM: 800 volts
- TJ: -40 to 125 C
- ITSM: 800 to 1,500 amps
- Thyristor Type: Silicon Controlled Rectifier (SCR)
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Supplier: Accuris
Description: Rules for the preparation of detail specifications for semiconductor devices of assessed quality: high current rectifier diodes (greater than 50 ampere rating)
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Supplier: Electro Optical Components, Inc.
Description: IMM offers a variety of fiber optic standard components with different receptacles and in pigtail design, including laser diodes with wavelength ranges from 635 nm up to 1550 nm, SM and MM VCSELs, Receivers 850 nm and 1300 nm, as well as Fiber Collimators with wavelength ranges from 635 nm up
- Wavelength Range: 850 nm
- Operating Current Range: 9 to 12 milliamps
- Laser Wavelength: Infrared
- Laser Type: Laser Diodes
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Supplier: Utmel Electronic Limited
Description: ZHCS500 Series 500 mA 40 V 40 uA High Current Schottky Barrier Diode - SOT-23
- VF: 0.55 volts
- IF: 500 mA
- VR: 40 volts
- IR: 0.04 mA
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Supplier: Broadcom Inc.
Description: This high gain optocoupler series uses a Light Emitting Diode and an integrated high gain photodetector to provide extremely high current transfer ratio between input and output. Separate pins for the photodiode and output stage result in TTL compatible saturation
- Isolation Voltage: 2,121 volts
- Collector Emitter Breakdown Voltage: 3 volts
- Operating Temperature: 0 to 70 C
- Input: AC
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Supplier: Solid State Devices, Inc.
Description: reputation has been built upon our unsurpassed technology and quality in the areas of high density/high power and high voltage discrete semiconductors and modules.
- VF: 1.15 volts
- VR: 2,000 volts
- IO: 400 amps
- IFSM: 3,500 amps
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Supplier: DigiKey
Description: Current Limiting Regulator High/Low-Side 12mA SOD-123FL
- Tj: -65 to 150 C
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: The Schottky-Rectifier-200V is a family of 200V high voltage schottky diodes available in various package options Additional Features Ultrafast recovery times Soft recovery Low leakage current Avalanche energy rated Higher switching frequency Low switching losses Low noise (EMI)
- Applications: High Voltage
- Features: Other, Schottky Barrier Diodes
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Supplier: Skyworks Solutions, Inc.
Description: The OLH 400 has high current transfer ratio at very low input currents making it ideal for applications such as Metal Oxide Semiconductor (MOS), Complementary MOS (CMOS), and low power logic interfacing or RS232C data transmission systems. Each OLH 400 has a light emitting
- Isolation Voltage: 1,000 volts
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Supplier: OSI Optoelectronics
Description: OSI Laser Diode, Inc.(LDI) 850 nm laser modules are designed for use in fiber optic instruments where high optical power and low power consumption are required. All packages contain LDI’s high reliability laser chips. The low profile style package is designed for use with narrow
- Wavelength Range: 850 nm
- Laser Power: 300 to 1,000 milliwatts
- Operating Temperature Range: -20 to 70 C
- Pulse Length: 50 ns
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Supplier: Microchip Technology, Inc.
Description: the TC962 (such as paralleling),driving this pin directly will cause the internal oscillator to sync to the external clock. Additional Features Pin Compatible With TC7662/ICL7662/SI7661 High Output Current ........................ 80mA No External Diodes Required. Wide Operating
- Operating Temperature: -45 to 85 C
- Configuration / Function: Charge Pump
- Package Type: DIP / CDIP / PDIP, SOIC / SOP
- Features: Other
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Supplier: OSI Optoelectronics
Description: OSI Laser Diode, Inc.‘s (LDI) CVD series lasers are strained layer quantum well devices fabricated by the MOCVD process. These pulsed lasers are available with up to 140 W of peak power at 905 nm. They offer a stable output power between -40°C and +80°C. Product Features High
- Wavelength Range: 850 to 905 nm
- Laser Power: 2,000 to 100,000 milliwatts
- Operating Temperature Range: -40 to 85 C
- Pulse Length: 100 to 200 ns
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Supplier: Broadcom Inc.
Description: addition, the high CTR and high output current capability make this device extremely useful in applications where high fanout is required. Compatibility with high voltage CMOS logic systems is guaranteed by the 18 V VCC and VO specifications and by testing output
- Isolation Voltage: 3,750 volts
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: 0 to 70 C
- Input: DC
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Supplier: Microchip Technology, Inc.
Description: MD0101 is a four channel, high voltage, current limiting protection device. It is designed to protect a low noise receiver from the high voltage transmit pulses in ultrasound applications and is commonly referred to as a T/R (transmit and receive) switch. Each channel has three
- Diode Applications: High Voltage
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICES, DIODE, SILICON SWITCHING (HIGH SPEED, HIGH CURRENT) TYPE 1N5282 & TX-1N5282 TYPE 1N5317 & TX-1N5317
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Supplier: Microchip Technology, Inc.
Description: HV9110 is a BiCMOS/DMOS single-output, pulse width modulator IC intended for use in high-speed, high-efficiency switch mode power supplies. It provides all the functions necessary to implement a single-switch current mode PWM, in any topology, with a minimum of external parts.
- Features: Other
- Package Type: SOIC / SOP
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VMI's K-series epoxy diodes start at 2.5kV and go up to 10kV. Current handling capacity ranges from 1.5 Amps to 3.0 Amps. Select from Trr of 100nS, 200nS or 3000n (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
A diode is an electronic device with two terminals that conduct current primarily in one direction. They feature a low resistance in one direction (ideally (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
The JANTX/JANTXV 1N6517FL surface-mount, formed-lead diode features higher current capability and lower thermal impedance than an axial-leaded device. Improved thermal characterstics are achieved through the use of thicker diameter and shorter leads versus those used in the standard axial (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
VMI offers axial-lead, glass-body diodes ranging from 2kV to 20kV. One example is our 1N6519 high voltage diode, a hermetically sealed device that can (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
. Generate high resolution LIV (light, current, voltage) curves in seconds, revealing diode performance metrics such as threshold current and slope efficiency. View the results on the modern touchscreen interface or connect the system to your computer to download and process the raw data. The high (read more)
Browse Laser Beam Analyzers Datasheets for World Star Tech -
PLT5 488HB_EP is a high-performance cyan laser diode from OSRAM, engineered for precision applications requiring a stable and powerful light source. Housed in (read more)
Browse Lasers Datasheets for World Star Tech -
Ushio Red Laser Diodes: Available from 633 nm to 690 nm. HL63290HD and HL63520HD: High-power red laser diodes providing over 2W of power, suitable for projector applications (read more)
Browse Diode Lasers Datasheets for World Star Tech -
leakage characteristics to dynamically control the current and voltage using low voltage solid state circuitry. Multiple opto-diodes can be used in series for higher voltages and opto-diodes can be used in parallel for higher current, high-voltage applications. There are multiple applications in (read more)
Browse Optocouplers Datasheets for Voltage Multipliers, Inc. -
Part Number: 1N4148W-7-F Category: Discrete Semiconductor Products, Diodes, Rectifiers - Single Description: General-purpose diode, designed for high-speed switching applications. Package: SOD-123 (read more)
Browse Diodes Datasheets for Win Source Electronics -
HL67203HD LASER DIODE HL67203HD is a high power (1.3W) 670nm laser diode operating at high efficiency opening up applications in skin treatment and photo (read more)
Browse Diode Lasers Datasheets for World Star Tech
Conduct Research Top
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What are Diodes? - Comparison of Features of Rectified Diodes
The diodes discussed in this chapter are devices with high withstand voltages and the ability to handle large currents, but they can be classified into several categories according to their characteristics, features, and manufacturing processes. Diode characteristics and performance are basically
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AG312: Design with PIN Diodes
is a current controlled resistor at radio and microwave frequencies. It is a silicon semiconductor diode in which a high resistivity intrinsic I-region is sandwiched between a P-type and N-type region. When the PIN diode is forward biased, holes and electrons are injected into the I-region
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Semiconductor Micromachining Using Diode-Pumped Solid-State Lasers
) industries for aplications including wafer dicing, scribing, direct via forming, and three-dimensional structuring. In the current study, two Qswitched and one mode-locked diode-pumped solid-state (DPSS) 355 nm lasers have been used to scribe grooves on silicon and sapphire wafer substrates
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Techniques to Increase High-Voltage Common Mode Rejection (HVCMR)
The ACPL-M61L is an optically coupled ultra-low power. 10 MBd digital CMOS optocouplers that operates with. low power consumption, especially when the light. emitting diode (LED) operates at low current. It is off ered. in a compact SO-5 package. When a low current is used. to drive the LED, common
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* Optimizing High-Voltage Common Mode Rejection Performance of the APCL-x6xL Ultra-Low Power Optocouplers
The ACPL-x6xL products are optically coupled ultra-low. power 10 MBd digital CMOS opto couplers that operate. with low power consumption, especially when the light. emitting diode (LED) operates at low current. When. a current is applied to drive the LED, common mode. rejection (CMR) can be aff
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Using Low Resistance MOSFETs as Load Switches
a resistor and therefore Ohms law applies; when turned off, the MOSFET appears as a diode and as such blocks current in one direction with a very high resistance (if reverse protection is required, an additional MOSFET or blocking diode is required). P-channel MOSFETs are normally used
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How to Choose Power FETs for ORing MOSFET Controllers
Using ORing controllers and power FETs in place of ORing power diodes can minimize power loss in high-current power distribution systems. This article discusses key selection steps for choosing power FETs, and provides design tips to ensure engineers meet their target specifications when developing
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Optocoupler Performance Comparison: NEC PS9552 vs. Avago HCPL-3120
Both the PS9552 and HCPL-3120 are optically-coupled isolators that employ a GaAlAs LED on the input side and a photo diode, a signal processing circuit, and a power output transistor on the output side. They feature large peak output current, fast switching speeds, undervoltage lockout protection
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Pulsed Power
Bradley, L. P., Parker, R. K., and Martin, T. H., 1972, Characteristics of Relativistic Field Emission High Current Diodes . InProc.
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Author index
GENERATION OF INTENSE Ka- X- RAY EMISSION IN THE HIGH CURRENT DIODE H0- MAGNETIC FIELD TRANSPORT OF HIGH POWER REB .
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Testing of high current by-pass diodes for the LHC magnet quench protection
[2] D. Hagedom and W. Nagele, "Radiation Effects on High Current Diodes at Crvogenic Temperatures in an Accelerator Environment", .
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Modular approach of a high current MOS compact model for circuit-level ESD simulation including transient gate coupling behavior
resistance decrease could only be reproduced by connecting a low current and high current diode in parallel.
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Time dependence of high-current vacuum diode impedance resulting from cathode plasma expansion
At the same time, the impedance of high current diodes is known to drop in time [2].
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Electron beam fusion progress report, April--September 1977
Neutron signature experiments using a new pulsed neutron source and analysis showed that the heavily shielded scintillator photomultiplier in use could readily differ entiate between the long pulse beam-target neutrons commonly produced in high current diodes and the short pulse neutron …
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The characteristics of high current amorphous silicon diodes
+ High Current Diodes .
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ESD-level circuit simulation-impact of gate RC-delay on HBM and CDM behavior
More accurately, the high current diode in the double diode approach [I] can be neglected to reproduce the vf-TLP forward characteristics.