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Supplier: Microchip Technology, Inc.
Description: The Schottky-Rectifier-2 00V is a family of 200V high voltage schottky diodes available in various package options Additional Features Ultrafast recovery times Soft recovery Low leakage current Avalanche energy rated Higher switching
- Diode Type: Schottky Barrier Diodes
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Supplier: Solid State Devices, Inc.
Description: reputation has been built upon our unsurpassed technology and quality in the areas of high density/high power and high voltage discrete semiconductors and modules.
- Diode Type: Schottky Barrier Diodes
- VF: 0.9500 volts
- VR: 100 volts
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Supplier: Utmel Electronic Limited
Description: Schottky Diodes & Rectifiers SOA 100V SM Schottky Rect
- Diode Type: Schottky Barrier Diodes, Other
- IF: 200000 mA
- IR: 0.0100 mA
- VF: 0.8800 volts
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Supplier: SemiGen
Description: . Features: Low Junction Capacitance High Voltage Sensitivity Uniform Rv Characteristics High Sensitivity Without Bias Applications: The Zero Bias Schottky Detector diodes are ideally suited for use in waveguide, coaxial and stripline applications through K-band.
- Diode Applications: Detector
- Diode Type: Schottky Barrier Diodes
- VF: 0.3000 volts
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Supplier: Utmel Electronic Limited
Description: DIODE ARRAY SCHOTTKY 1200V TO247
- Diode Type: Schottky Barrier Diodes, Other
- IF: 10000 mA
- IR: 0.0300 mA
- RoHS Compliant: Yes
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SMS3925-040LF is being discontinued and is not recommended for new designs. The suggested replacement is SMS3924-040LF The SMS3925-040LF is a 40 V, 0.6 pF RF Schottky diode designed for use as a level detector in wireless handsets and for general purpose low-cost,
- Diode Type: Schottky Barrier Diodes
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Supplier: Solid State Devices, Inc.
Description: reputation has been built upon our unsurpassed technology and quality in the areas of high density/high power and high voltage discrete semiconductors and modules.
- Applications: Rectifier Diode
- IFSM: 8 amps
- Package Type: Other
- VF: 1.8 volts
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Supplier: Broadcom Inc.
Description: General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like detectors or mixers, please refer to HSMS-282X. For low flicker (1/F) noise applications
- Applications: Detector, Mixer, Switching
- IF: 1 mA
- Life Cycle Stage: Maturity
- Package Type: SOT23, SOT143
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Supplier: Broadcom Inc.
Description: General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like detectors or mixers, please refer to HSMS-282X. For low flicker (1/F) noise applications
- Applications: Detector, Mixer, Switching
- IF: 1 mA
- Life Cycle Stage: Maturity
- Package Type: SOT23, SOT143
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Supplier: Elite Semiconductor Products, Inc.
Description: Features: Low cost Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Dual rectifier construction, positive center-tap Metal Silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage
- Diode Type: Schottky Barrier Diodes
- IF: 5000 mA
- IR: 0.5000 to 25 mA
- Lead Type: Axial Leads
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Supplier: Utmel Electronic Limited
Description: DIODE ARRAY SCHOTTKY 45V D2PAK
- Diode Type: Schottky Barrier Diodes, Other
- Lead Type: Other
- Tj: -55 to 175 C
- VF: 0.5600 volts
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Supplier: Utmel Electronic Limited
Description: DIODE SCHOTTKY 100V 2A SOD123F
- Diode Type: Schottky Barrier Diodes, Other
- IF: 2000 mA
- IR: 1.00E-3 mA
- RoHS Compliant: Yes
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Supplier: Frontier Electronics Corp.
Description: systems to prevent batteries from draining through the solar panel when there is little to no light. Schottky Diodes are also used in switched-mode power supplies as rectifiers due to their fast response time and high efficiency. Average rectified current range from 1.0A to
- Diode Type: Schottky Barrier Diodes
- IF: 1000 to 30000 mA
- IR: 0.0100 to 0.5000 mA
- RoHS Compliant: Yes
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Supplier: Frontier Electronics Corp.
Description: in solar systems to prevent batteries from draining through the solar panel when there is little to no light. Schottky Diodes are also used in switched-mode power supplies as rectifiers due to their fast response time and high efficiency. Average rectified current range from
- Applications: Rectifier Diode
- IF: 1000 to 20000 mA
- IFSM: 25 to 240 amps
- Package Type: SMA, SMB, SOD-123, SOD-323
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Supplier: Infineon Technologies AG
Description: Silicon Schottky Diode Summary of Features For low-loss, fast-recovery, meter protection,bias isolation and clamping application Guard ring protected Low forward voltage Pb-free (RoHS compliant) package Applications
- Diode Type: Schottky Barrier Diodes
- IF: 200 mA
- RoHS Compliant: Yes
- VF: 0.8000 volts
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Supplier: Infineon Technologies AG
Description: Silicon Schottky Diode Summary of Features For low-loss, fast-recovery, meter protection,bias isolation and clamping application Guard ring protected Low forward voltage Pb-free (RoHS compliant) package Applications
- Diode Type: Schottky Barrier Diodes
- IF: 200 mA
- RoHS Compliant: Yes
- VF: 0.8000 volts
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Supplier: Infineon Technologies AG
Description: Silicon Schottky Diode Summary of Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing BAS70-04S: For orientation in reel see Package information below
- Diode Type: Schottky Barrier Diodes
- IF: 70 mA
- RoHS Compliant: Yes
- VF: 1 volts
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Supplier: PANJIT SemiConductor
Description: Schottky Barrier Rectifiers feature a plastic package with UL Flammability Classification 94V-O utilizing flame retardant Epoxy Molding Compound. They exceed environmental standards of MIL-S-19500/288 and are for use in low voltage, high frequency inverters, free wheeling, and
- Applications: Rectifier Diode
- IF: 1000 mA
- IFSM: 30 amps
- Life Cycle Stage: Maturity
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Supplier: Infineon Technologies AG
Description: Silicon Schottky Diode Summary of Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing BAS70-04S: For orientation in reel see Package information below
- Diode Type: Schottky Barrier Diodes
- IF: 70 mA
- RoHS Compliant: Yes
- VF: 1 volts
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Supplier: PANJIT SemiConductor
Description: Schottky Barrier Rectifiers feature a plastic package with UL Flammability Classification 94V-O utilizing flame retardant Epoxy Molding Compound. They exceed environmental standards of MIL-S-19500/288 and are for use in low voltage, high frequency inverters, free wheeling, and
- Applications: Rectifier Diode
- IF: 3000 mA
- IFSM: 80 amps
- Life Cycle Stage: Maturity
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Supplier: PANJIT SemiConductor
Description: Schottky Barrier Rectifiers feature a plastic package with UL Flammability Classification 94V-O utilizing flame retardant Epoxy Molding Compound and are in compliance with EU RoHS 2002/95/EC directives. They exceed environmental standards of MIL-S-19500/288 and are for use in low
- Applications: Rectifier Diode
- IF: 1000 mA
- IFSM: 25 amps
- Life Cycle Stage: Maturity
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Supplier: Richardson RFPD
Description: HIGH VOLTAGE SCHOTTKY DIODE. Applications: Parallel Diode, Free Wheeling Diode, Snubber Diode, Uninterruptible Power Supply (UPS), 48 Volt Output Rectifiers, High Speed Rectifiers. Features: Ultrafast Recovery Times, Soft Recovery
- Applications: Rectifier Diode
- IF: 45000 mA
- Package Type: TO-247
- trr: 25 ns
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Supplier: Richardson RFPD
Description: HIGH VOLTAGE SCHOTTKY DIODE. Applications: Parallel Diode, Free Wheeling Diode, Snubber Diode, Uninterruptible Power Supply (UPS), 48 Volt Output Rectifiers, High Speed Rectifiers. Features: Ultrafast Recovery Times, Soft Recovery
- Applications: Rectifier Diode
- IF: 120000 mA
- Package Type: Other
- trr: 40 ns
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Supplier: Richardson RFPD
Description: HIGH VOLTAGE SCHOTTKY DIODE. Applications: Parallel Diode, Free Wheeling Diode, Snubber Diode, Uninterruptible Power Supply (UPS), 48 Volt Output Rectifiers, High Speed Rectifiers. Features: Ultrafast Recovery Times, Soft Recovery
- Applications: Rectifier Diode
- IF: 45000 mA
- Package Type: Other
- trr: 25 ns
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Supplier: Richardson RFPD
Description: HIGH VOLTAGE SCHOTTKY DIODE. Applications: Parallel Diode, Free Wheeling Diode, Snubber Diode, Uninterruptible Power Supply (UPS), 48 Volt Output Rectifiers, High Speed Rectifiers. Features: Ultrafast Recovery Times, Soft Recovery
- Applications: Rectifier Diode
- IF: 75000 mA
- Package Type: Other
- trr: 35 ns
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Supplier: Broadcom Inc.
Description: General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like detectors or mixers, please refer to HSMS-282X. For low flicker (1/F) noise applications
- Applications: Detector, Mixer, Switching
- IF: 1 mA
- Life Cycle Stage: Maturity
- Package Type: SOT323
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Supplier: Broadcom Inc.
Description: General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like detectors or mixers, please refer to HSMS-282X. For low flicker (1/F) noise applications
- Applications: Detector, Mixer, Switching
- IF: 1 mA
- Life Cycle Stage: Maturity
- Package Type: SOT363
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Supplier: VAST STOCK CO., LIMITED
Description: Schottky Diodes & Rectifiers Dual High Voltage
- Diode Type: Schottky Barrier Diodes
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Supplier: VAST STOCK CO., LIMITED
Description: Schottky Diodes & Rectifiers Triple Isolated High Voltage
- Diode Type: Schottky Barrier Diodes
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Supplier: VAST STOCK CO., LIMITED
Description: Schottky Diodes & Rectifiers Dual High Voltage Schottky Rectifier
- Diode Type: Schottky Barrier Diodes
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Supplier: VAST STOCK CO., LIMITED
Description: Schottky Diodes & Rectifiers HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
- Diode Type: Schottky Barrier Diodes
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Supplier: Wolfspeed
Description: -Series family of diodes are ideal for on-board and off-board automotive applications and solar power inversion. Features 4th Generation SiC Merged PIN Schottky Technology Zero reverse recovery current Zero forward recovery voltage High
- Diode Type: Schottky Barrier Diodes
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Supplier: ROHM Semiconductor USA, LLC
Description: RB218BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- Diode Type: Schottky Barrier Diodes
- IF: 10000 mA
- IR: 0.0100 mA
- RoHS Compliant: Yes
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Supplier: Toshiba America, Inc.
Description: Toshiba offers an extensive portfolio of diodes, including high-speed, low-loss Schottky-barrier diodes (SBDs) and ESD protection diodes for high-speed signal lines. Fabricated using silicon carbide (SiC), SiC SBDs provide high breakdown
- Applications: Rectifier Diode
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Supplier: Nexperia B.V.
Description: General-purpose Schottky diode in an ultra small DFN1006BD-2 (SOD882BD) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits Forward current: IF = 0.2 A Reverse voltage: VR = 40 V
- Applications: Rectifier Diode, Switching
- IF: 200 mA
- Package Type: Other
- RoHS Compliant: Yes
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. Another type of diode is the Schottky diode, constructed from a metal-to-metal semiconductor contact and featuring a lower forward voltage drop than that of traditional P-N junction diodes. They can be used as a low-loss rectifier, but the reverse leakage current of these (read more)
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Voltage Multipliers, Inc. offers the most complete range of high voltage diodes in the world. All wafers are doped, diffused and metalized in our facility in Visalia, California. Our extensive testing insures that our customers receive the highest quality diodes possible (read more)
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They include low barrier diodes and zero-bias detectors that combine Skyworks advanced semiconductor technology with low-cost packaging techniques. All diodes are 100 percent DC tested and deliver tight parameter distribution, which minimizes performance variability (read more)
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Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
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- Communications - Test and Measurement Description: The MADZ-011002 Single junction, MADZ-011003 anti-parallel pair, MADZ-011004 reverse tee and MADZ-011005 unconnected anti-parallel pair are gallium arsenide flip-chip THz Schottky barrier diodes. These (read more)
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STMicroelectronics' 100 V trench diodes are designed for both industrial and automotive applications. The package offering from SOD123Flat to DPAK provide flexible solutions while supporting higher power density designs and improving overall application performance. The product (read more)
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The MBRS540T3G, manufactured by ON Semiconductor, is a high-performance Schottky barrier rectifier diode designed for high-frequency and energy-sensitive applications. With its low forward voltage drop and high surge current handling capacity, it offers engineers (read more)
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VMI offers a complete line of high voltage, hermetically sealed diodes for tough applications when an epoxy or plastic diode can’t withstand the environment. (read more)
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offer extensive testing to insure that our customers receive the highest quality diodes possible. Hermetically sealed glass high voltage diodes are processed per MIL-PRF-19500, MIL_STD-750, and the application slash sheets, /575,/576, and /577 (read more)
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SiC power Schottky and PiN diodes
This was particularly significant because the control of leakage current was a major limitation in the demonstration of high voltage Schottky diodes , which is partially dependent on the integrity of the voltage blocking epi- taxial layers used to fabricate them.
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>1200 V GaN‐on‐silicon Schottky diode
The GaN on silicon high voltage Schottky diode design effort centered upon utilizing a lateral as opposed to verti- cal diode design geometry.
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Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes
High voltage Schottky diode is one of the main device structures that has been extensively fabricated using silicon carbide (SiC) because of its potential for replacingSibasedSchottkyandp-njunctiondiodesin various high power applications. n-type SiC Schottky diodes with breakdown voltage up to ~3…
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High voltage, temperature-hard 3C-SiC Schottky diodes using all-Ni metallization
High voltage Schottky diodes have been fabricated on 3C-Sicfilms grown on Si substrates.
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d626 datasheet : Datasheets for Electronic Components and Semiconductors
High voltage schottky diode .
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High Energy Resolution CdTe Schottky Diode γ-Ray Detectors
[19] L. A. Kosyachenko, V. A. Gnatyuk, T. Aoki, V. M. Sklyarchuk, O. F. Sklyarchuk, and O. L. Maslyanchuk, “Super high voltage Schottky diode with low leakage current for X- and g-ray detector application,” Appl. Phys. Let., vol.
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Design rules for field plate edge termination in SiC Schottky diodes
In this paper, a simple set of design rules will be developed for field plate edge termination of high voltage Schottky diodes .
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Page 4. Semiconductor parts with 100 in root number
200V, 100A high voltage schottky diode .
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Charge transport mechanism in CdTe-based p-n junction detectors formed by laser irradiation
[7] Kosyachenko, L.A., Gnatyuk, V.A., Aoki, T., Sklyarchuk, V.M., Sklyarchuk, O.F. and Maslyanchuk, O.L., “Super high voltage Schottky diode with low leakage current for X- and γ-ray detector application,” Appl. Phys.
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Field plate engineering for GaN-based Schottky barrier diodes
Design and optimization of junction termination extension (JTE) for 4H-SiC high voltage Schottky diodes .