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Supplier: Microchip Technology, Inc.
Description: The Schottky-Rectifier-200V is a family of 200V high voltage schottky diodes available in various package options Additional Features Ultrafast recovery times Soft recovery Low leakage current Avalanche energy rated Higher switching frequency Low switching losses
- Applications: High Voltage
- Features: Other, Schottky Barrier Diodes
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SMS3925-040LF is being discontinued and is not recommended for new designs. The suggested replacement is SMS3924-040LF The SMS3925-040LF is a 40 V, 0.6 pF RF Schottky diode designed for use as a level detector in wireless handsets and for general purpose low-cost,
- Features: Schottky Barrier Diodes
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Supplier: RS Components, Ltd.
Description: Diode Schottky 100V 10A SMPC
- Features: Other, Schottky, Schottky Barrier Diodes
- Applications: Rectifier Diode
- RoHS Compliant: RoHS Compliant
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Supplier: VAST STOCK CO., LIMITED
Description: Schottky Diodes & Rectifiers Automotive high voltage power Schottky rectifier
- Features: Other, Schottky Barrier Diodes
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Supplier: Solid State Devices, Inc.
Description: reputation has been built upon our unsurpassed technology and quality in the areas of high density/high power and high voltage discrete semiconductors and modules.
- VF: 0.65 volts
- VR: 30 volts
- IFSM: 25 amps
- Features: Other, Schottky Barrier Diodes
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Supplier: Frontier Electronics Corp.
Description: The Schottky diode (also known as a Schottky Barrier Diode) is a fast switching diode with a low forward voltage drop. There is a small voltage drop across a diode when current flows through it. Frontier SMD Schottky diodes have a
- VF: 0.38 to 0.92 volts
- IF: 1,000 to 20,000 mA
- VR: 20 to 200 volts
- IR: 0.2 to 1 mA
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Supplier: Nexperia B.V.
Description: General-purpose Schottky diode in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits High switching speed Low leakage current High breakdown voltage Low capacitance Applications Ultra high-speed switching Voltage
- VF: 500 to 0.5 volts
- IF: 120 mA
- VR: 40 volts
- IR: 1,000 mA
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Supplier: Utmel Electronic Limited
Description: Schottky Diodes & Rectifiers SOA 100V SM Schottky Rect
- VF: 0.88 volts
- IF: 200,000 mA
- VR: 100 volts
- IR: 0.01 mA
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Supplier: Frontier Electronics Corp.
Description: The Schottky diode (also known as a Schottky Barrier Diode) is a fast switching diode with a low forward voltage drop. There is a small voltage drop across a diode when current flows through it. Frontier TH Schottky diodes have a
- VF: 0.45 to 0.95 volts
- IF: 1,000 to 30,000 mA
- VR: 20 to 200 volts
- IR: 0.01 to 0.5 mA
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky. Search-friendly keywords include diode, rectifier, Schottky, switching diode, Diode and Rectifier, Diode Arrays. This
- Tj: -65 C
- IO: 8 amps
- Features: Other, Schottky Barrier Diodes
- Applications: Rectifier Diode
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Supplier: SemiGen
Description: Capacitance High Voltage Sensitivity Uniform Rv Characteristics High Sensitivity Without Bias Applications: The Zero Bias Schottky Detector diodes are ideally suited for use in waveguide, coaxial and stripline applications through K-band.
- VF: 0.3 volts
- Applications: Detector
- Features: Other, Schottky Barrier Diodes
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Supplier: Elite Semiconductor Products, Inc.
Description: Features: Low cost Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Dual rectifier construction, positive center-tap Metal Silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage
- VF: 0.55 volts
- IF: 5,000 mA
- VR: 20 volts
- IR: 0.5 to 50 mA
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Supplier: Richardson RFPD
Description: Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: The MA4E2054 series are low barrier n-type silicon Schottky diodes assembled in low cost surface mount plastic packages. They are designed for use as high performance mixer and detector diodes. These
- Operating Frequency: 0 to 4,000 MHz
- CT: 0.3 pF
- Features: RF Diodes, Schottky Barrier Diodes
- RoHS Compliant: RoHS Compliant
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Supplier: Broadcom Inc.
Description: General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like detectors or mixers, please refer to HSMS-282X. For low flicker (1/F) noise applications
- VF: 0.4 volts
- IF: 1 mA
- IR: 0.0002 mA
- Tj: 150 C
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Schottky Diodes - Small Signal Transistors & Diodes - Diode - Schottky Diodes - BAS70-06 -- BAS70-06Supplier: Infineon Technologies AG
Description: Silicon Schottky Diode Summary of Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing BAS70-04S: For orientation in reel see Package information below Pb-free (RoHS compliant) package
- VF: 1 volts
- IF: 70 mA
- VR: 70 volts
- Features: Other, Schottky Barrier Diodes
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 100V 960mV@4A 2A SOD-123F Schottky Barrier Diodes (SBD) ROHS
- VF: 0.96 volts
- VR: 100 volts
- IR: 0.001 mA
- RoHS Compliant: RoHS Compliant
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Supplier: Newark, An Avnet Company
Description: SMALL SIGNAL SCHOTTKY DIODE, 100V, 6A; Diode Configuration:Single; Repetitive Peak Reverse Voltage:100V; Average Forward Current:6A; Forward Voltage Max:780mV; Forward Surge Current:100A; Operating Temperature Max:150°C RoHS Compliant: Yes
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Schottky Diodes - Small Signal Transistors & Diodes - Diode - Schottky Diodes - BAT54-05 -- BAT54-05Supplier: Infineon Technologies AG
Description: Silicon Schottky Diode Summary of Features For low-loss, fast-recovery, meter protection,bias isolation and clamping application Guard ring protected Low forward voltage Pb-free (RoHS compliant) package Applications Automotive battery management system (BMS) Automotive
- VF: 0.8 volts
- IF: 200 mA
- VR: 30 volts
- Features: Other, Schottky Barrier Diodes
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Supplier: Newark, An Avnet Company
Description: SCHOTTKY DIODE ARRAY, Common Cathode, 80A, TO-247; Repetitive Peak Reverse Voltage:170V; Average Forward Current:40A; Diode Configuration:Dual Common Cathode; Diode Case Style:TO-247; No. of Pins:3Pins; Forward Voltage Max:840mV RoHS Compliant: Yes
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Schottky Diodes - Small Signal Transistors & Diodes - Diode - Schottky Diodes - BAT54-04 -- BAT54-04Supplier: Infineon Technologies AG
Description: Silicon Schottky Diode Summary of Features For low-loss, fast-recovery, meter protection,bias isolation and clamping application Guard ring protected Low forward voltage Pb-free (RoHS compliant) package Applications Automotive battery management system (BMS) Automotive
- VF: 0.8 volts
- IF: 200 mA
- VR: 30 volts
- Features: Other, Schottky Barrier Diodes
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Supplier: Infineon Technologies AG
Description: 1200 V Silicion Carbide Schottky diode in a DPAK real2pin package The CoolSiC™ Schottky diode generation 5 1200 V, 5 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already
- VF: 1.5 volts
- IF: 5,000 mA
- IR: 0.0025 mA
- IFSM: 59 amps
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Supplier: Littelfuse, Inc.
Description: This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and
- VF: 1.5 volts
- IR: 0.001 mA
- VRRM: 1,200 volts
- IFSM: 145 amps
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Supplier: Wolfspeed
Description: Wolfspeed's E-Series diodes are specifically designed to be robust and relibale in the harshest environments. As a result, the E-Series diodes are the industry's first 1200V SiC diodes to be automotive qualified and
- VRRM: 1,200 volts
- Features: Other, Schottky Barrier Diodes
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Supplier: Microchip Technology, Inc.
Description: Features 2.5V to 10V input voltage Output voltage up to 34V with OVP Internal Schottky diode Over 500mA switch current 1.2MHz PWM operation 95mV feedback voltage <1% line and load regulation <1µA shutdown current Over-temperature protection UVLO Thin SOT-23 6-pin
- Features: Other, Schottky Barrier Diodes
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Supplier: Newark, An Avnet Company
Description: DIODE, SCHOTTKY, 2X15A, 60V; Repetitive Peak Reverse Voltage:60V; Average Forward Current:15A; Diode Configuration:Dual Common Cathode; Diode Case Style:TO-247; No. of Pins:3Pins; Forward Voltage Max:650mV; Forward Surge Current:200ARoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: DIODE SCHOTTKY 60V 3A SOD128
- VF: 0.61 volts
- IF: 3,000 mA
- VR: 60 volts
- IR: 0.15 mA
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Supplier: Newark, An Avnet Company
Description: DIODE, HIGH VOLTAGE, 0.25A, 2KV, SOD-57; Repetitive Peak Reverse Voltage:2kV; Average Forward Current:250mA; Diode Configuration:Single; Forward Voltage Max:2.4V; Reverse Recovery Time:300ns; Forward Surge Current:20A RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: The 30BQ100GPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse
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Supplier: ROHM Semiconductor USA, LLC
Description: RB218BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle systems
- VF: 0.88 volts
- IF: 10,000 mA
- VR: 200 volts
- IR: 0.01 mA
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Supplier: Allied Electronics, Inc.
Description: The 10BQ030PbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery
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Supplier: Allied Electronics, Inc.
Description: The 10BQ100PbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse
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Supplier: Allied Electronics, Inc.
Description: The 10MQ100NPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse
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Supplier: Utmel Electronic Limited
Description: DIODE ARRAY SCHOTTKY 60V D2PAK
- VF: 0.61 volts
- IF: 1,000,000 mA
- VR: 60 volts
- Tj: -55 to 150 C
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Supplier: Utmel Electronic Limited
Description: DIODE ARRAY SCHOTTKY 45V D2PAK
- VF: 0.53 volts
- IF: 1,240,000 mA
- VR: 45 volts
- Tj: -55 to 150 C
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Supplier: Elite Semiconductor Products, Inc.
Description: Features: Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Dual rectifier construction, positive center-tap Metal Silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop
- VF: 0.65 to 0.75 volts
- IF: 7,500 mA
- VR: 50 volts
- IR: 1 to 50 mA
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. Another type of diode is the Schottky diode, constructed from a metal-to-metal semiconductor contact and featuring a lower forward voltage drop than that of traditional P-N junction diodes. They can be used as a low-loss rectifier, but the reverse leakage current of these (read more)
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Voltage Multipliers, Inc. offers the most complete range of high voltage diodes in the world. All wafers are doped, diffused and metalized in our facility in Visalia, California. Our extensive testing insures that our customers receive the highest quality diodes possible (read more)
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They include low barrier diodes and zero-bias detectors that combine Skyworks advanced semiconductor technology with low-cost packaging techniques. All diodes are 100 percent DC tested and deliver tight parameter distribution, which minimizes performance variability (read more)
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Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
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- Communications - Test and Measurement Description: The MADZ-011002 Single junction, MADZ-011003 anti-parallel pair, MADZ-011004 reverse tee and MADZ-011005 unconnected anti-parallel pair are gallium arsenide flip-chip THz Schottky barrier diodes. These (read more)
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high-frequency applications where energy efficiency and response speed are critical. With advantages including low leakage current, temperature stability, and reliable electrical performance, SS16 Schottky diodes are widely used in switching power supplies, voltage protection circuits, solar (read more)
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The MBRS540T3G, manufactured by ON Semiconductor, is a high-performance Schottky barrier rectifier diode designed for high-frequency and energy-sensitive applications. With its low forward voltage drop and high surge current handling capacity, it offers engineers (read more)
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VMI manufactures a commercial 1N6535 high voltage diode, and two military versions - the JANTX1N6535 and JANTXV1N6535. VMI's 1N6535 diode is an axial (read more)
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SiC power Schottky and PiN diodes
This was particularly significant because the control of leakage current was a major limitation in the demonstration of high voltage Schottky diodes , which is partially dependent on the integrity of the voltage blocking epi- taxial layers used to fabricate them.
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>1200 V GaN‐on‐silicon Schottky diode
The GaN on silicon high voltage Schottky diode design effort centered upon utilizing a lateral as opposed to verti- cal diode design geometry.
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Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes
High voltage Schottky diode is one of the main device structures that has been extensively fabricated using silicon carbide (SiC) because of its potential for replacingSibasedSchottkyandp-njunctiondiodesin various high power applications. n-type SiC Schottky diodes with breakdown voltage up to ~3…
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High voltage, temperature-hard 3C-SiC Schottky diodes using all-Ni metallization
High voltage Schottky diodes have been fabricated on 3C-Sicfilms grown on Si substrates.
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d626 datasheet : Datasheets for Electronic Components and Semiconductors
High voltage schottky diode .
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High Energy Resolution CdTe Schottky Diode γ-Ray Detectors
[19] L. A. Kosyachenko, V. A. Gnatyuk, T. Aoki, V. M. Sklyarchuk, O. F. Sklyarchuk, and O. L. Maslyanchuk, “Super high voltage Schottky diode with low leakage current for X- and g-ray detector application,” Appl. Phys. Let., vol.
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Design rules for field plate edge termination in SiC Schottky diodes
In this paper, a simple set of design rules will be developed for field plate edge termination of high voltage Schottky diodes .
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Page 4. Semiconductor parts with 100 in root number
200V, 100A high voltage schottky diode .
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Charge transport mechanism in CdTe-based p-n junction detectors formed by laser irradiation
[7] Kosyachenko, L.A., Gnatyuk, V.A., Aoki, T., Sklyarchuk, V.M., Sklyarchuk, O.F. and Maslyanchuk, O.L., “Super high voltage Schottky diode with low leakage current for X- and γ-ray detector application,” Appl. Phys.
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Field plate engineering for GaN-based Schottky barrier diodes
Design and optimization of junction termination extension (JTE) for 4H-SiC high voltage Schottky diodes .