Products & Services
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Supplier: Semikron, Inc.
Description: SEMIKRON IGBT driver family SEMIKRON offers two driver families – the SKHI and the SKYPER drivers. SKYPER 12 press-fit, SKYPER 32, SKYPER 42 LJ and SKYPER 52 cover with 1W to 10W output power per channel the whole power range between 30kW and 2MW inverters. The high
- Number of Output Channels: 1, 2, 4, Other
- Peak Output Current: 30 amps
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Supplier: Utmel Electronic Limited
Description: HIGH CURRENT IGBT GATE DRIVER
- Driver Type: High-side Gate Driver
- IC Package Type: SOIC, Other
- Operating Temperature: -40 C
- Packing Method: Tape Reel, Other
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Supplier: VAST STOCK CO., LIMITED
Description: Gate Drivers IGBT Power Driver
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Supplier: VAST STOCK CO., LIMITED
Description: Gate Drivers Triple IGBT/MOS
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Supplier: VAST STOCK CO., LIMITED
Description: Gate Drivers Advanced IGBT/MOSFET driver
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Supplier: VAST STOCK CO., LIMITED
Description: Gate Drivers Low Side IGBT Driver
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Supplier: DigiKey
Description: HIGH CURRENT IGBT GATE DRIVER
- Driver Type: High-side Gate Driver, Low-side Gate Driver
- Fall Time: 7.9 ns
- IC Package Type: SOIC, Other
- Operating Temperature: -40 to 125 C
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Supplier: Radwell International
Description: IGBT, GATE DRIVER, HALF-BRIDGE, N CHANNEL, 2 DRIVERS, 1200V, 20NS, 18-SOIC, INPUT: INVERTING, SURFACE MOUNT, ROHS3 COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
- Transistor Type: IGBT
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Supplier: Radwell International
Description: IGBT GATE DRIVER, 15 V, 7.9 MA, OUTPUT CURRENT: 20 MA, SMD/SMT, SOIC-8, SINGLE, HALF BRIDGE. FREE 2 YEAR RADWELL WARRANTY
- Transistor Type: IGBT
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Supplier: DigiKey
Description: IGBT GATE DRIVERS, HIGH-CURRENT,
- Driver Type: Dual Gate Driver (Half-bridge)
- Fall Time: 7.9 ns
- IC Package Type: SOIC, Other
- Operating Temperature: -40 to 125 C
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Supplier: Radwell International
Description: GATE DRIVER, IGBT, N CHANNEL MOSFET, HALF BRIDGE, 3 PHASE, 6 DRIVERS, 28-SOIC, 350MA, SUPPLY VOLTAGE: 10V ~ 20V, INVERTING INPUT, 18.1MM X 7.6MM, ROHS3 COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
- Transistor Type: IGBT
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Supplier: Radwell International
Description: IGBT GATE DRIVER, FULL BRIDGE, DSO-28, DRIVER CONFIGURATION: FULL BRIDGE, PEAK OUTPUT CURRENT: 240MA, SUPPLY VOLTAGE MIN:13V, SUPPLY VOLTAGE MAX:17.5V, DRIVER CASE STYLE: DSO, NO. OF PINS: 28 PINS, INPUT DELAY: 530NS, OUTPUT DELAY:490NS. FREE 2 YEAR RADWELL
- Transistor Type: IGBT
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1078800-MIC4422ZT Category: Integrated Circuits (ICs)>PMIC - Gate Drivers Package: Tube Standard Package: 50 Channel Type: Single Input Type: Non-Inverting Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, N
- Driver Type: Low-side Gate Driver
- Fall Time: 24 ns
- Operating Temperature: 0.0 to 150 C
- Output Configuration: Noninverting
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Supplier: Win Source Electronics
Description: Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 1.7V Current - Peak Output (Source, Sink): 2.5A, 5A Rise / Fall Time (Typ): 15ns, 7ns Voltage - Supply: 10V ~ 32V Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6 Temperature Range
- Driver Type: Low-side Gate Driver
- Fall Time: 7 ns
- Operating Temperature: -40 to 140 C
- Output Configuration: Noninverting
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1066167-IXDD630CI Category: Integrated Circuits (ICs)>PMIC - Gate Drivers Package: Tube Standard Package: 50 Channel Type: Single Input Type: Non-Inverting Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel, P
- Driver Type: Low-side Gate Driver
- Fall Time: 11 ns
- Operating Temperature: -55 to 150 C
- Output Configuration: Noninverting
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Supplier: Win Source Electronics
Description: -Side Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1V, 2.4V Current - Peak Output (Source, Sink): 4A, 4A Rise / Fall Time (Typ): 8ns, 7ns Voltage - Supply: 4.5V ~ 18V Package / Case: SC-74A, SOT-753 Supplier Device Package: SOT-23
- Driver Type: Low-side Gate Driver
- Fall Time: 7 ns
- Operating Temperature: -40 to 140 C
- Output Configuration: Noninverting
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Supplier: DigiKey
Description: HIGH CURRENT IGBT GATE DRIVER WI
- Driver Type: High-side Gate Driver
- Fall Time: 7.9 ns
- IC Package Type: SOIC, Other
- Operating Temperature: -40 to 125 C
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Supplier: Infineon Technologies AG
Description: 5 V single low-side gate driver IC with over current protection and fault reporting EiceDRIVER™ 5 V low side gate driver IC with typical 1.6 A source and 3.3 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Summary of Features Gate drive
- Driver Type: Low-side Gate Driver
- IC Package Type: Other
- Packing Method: Tube
- Peak Output Current: 1.6 amps
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Supplier: DigiKey
Description: SIC MOSFET AND IGBT DRIVER, 35V,
- Driver Type: Low-side Gate Driver
- Fall Time: 6 ns
- IC Package Type: Other
- Operating Temperature: -40 to 125 C
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Supplier: Utmel Electronic Limited
Description: IC IGBT GATE DRIVER INV/AC SERVO
- IC Package Type: Other
- Operating Temperature: -20 C
- Packing Method: Bulk, Other
- Peak Output Current: 5 amps
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Supplier: Infineon Technologies AG
Description: 25 V dual low-side gate driver IC 20 V dual low-side gate driver IC for IGBTs and MOSFETs with typical 2.3 A source and 3.3 A sink current in 8 Lead PDIP package with level-shift technology. Also available in 8 Lead SOIC. Summary of Features Gate drive
- Driver Type: Low-side Gate Driver
- IC Package Type: Other
- Packing Method: Tube
- Peak Output Current: 2.3 amps
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Description: MORNSUN hybrid integrated IGBT drivers are designed with a built-in isolation DC/DC converter. They can realize the safety electrical isolation between the power semiconductor and the control circuit with the high-speed optical coupling. The series features switching frequency up to
- IC Package Type: SIP
- Number of Output Channels: 1
- Output Voltage: 15 volts
- Supply Voltage: 15 volts
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Supplier: Littelfuse, Inc.
Description: The IX4340NE is an automotive grade, AEC-Q100 qualified dual, high current, low side gate driver. Each of the two outputs is capable of sourcing and sinking 5A of peak current, and has a maximum voltage rating of 20V. The two outputs can be paralleled for higher current applications.
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: AgileSwitch® HPM Fiber Master IGBT Gate Driver Board – 1.7kV The HPM Fiber Master IGBT Gate Driver Board is a single Channel Plug and Play Gate Driver Board for 1.7kV High Power Modules such as IHV, IHM, HiPAK™ and others. Optimized for High
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Supplier: Texas Instruments
Description: 2.5 A Isolated IGBT/MOSFET Gate Driver 16-SOIC -40 to 125
- IC Package Type: Other
- Number of Output Channels: 1
- Operating Temperature: -40 to 125 C
- Output Voltage: 30 volts
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Supplier: Littelfuse, Inc.
Description: The IX4342 is a dual, high current, low side gate driver with one inverting and one non-inverting input. With a maximum voltage rating of 18V, each of the two outputs is capable of sourcing and sinking 5A of peak current. For higher current applications, the two independent outputs can
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Supplier: Skyworks Solutions, Inc.
Description: The new Si82Ex family are isolated gate drive solutions for power switch driving needs, including Silicon MOSFET, IGBT, SiC, and GaN. All devices in this family include proven voltage mode gate drive architectures with a variety of CMOS inputs with deglitch options, dual
- Driver Type: High-side Gate Driver, Low-side Gate Driver
- IC Package Type: SOIC, Other
- Input Threshold: CMOS, PWM
- Operating Temperature: -40 to 125 C
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Supplier: Lingto Electronic Limited
Description: IC GATE DRVR IGBT
- Gate Type: Buffer / Driver
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Supplier: Utmel Electronic Limited
Description: IC MOSFET IGBT DRIVER 8SOIC
- PD: 625 milliwatts
- Packing Method: Tape Reel, Other
- TJ: -40 to 150 C
- tf: 80 ns
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Supplier: LCSC Electronics Technology (HK) Limited
Description: Low Side MOSFET;IGBT 4A 5V~25V 4A SOT-23-5 Gate Drive ICs ROHS
- Driver Type: Low-side Gate Driver
- Supply Voltage: 5 to 25 volts
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Description: HIGH CURRENT IGBT GATE DRIVER
- Packing Method: Tape Reel, Other
- Supply Voltage: 20 volts
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Supplier: Quarktwin Technology Ltd.
Description: Half Bridge (3) Driver AC Motors IGBT
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: SIP, Other
- Operating Temperature: -20 to 150 C
- Output Configuration: Inverting
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Supplier: Acme Chip Technology Co., Limited
Description: IC GATE DRVR IGBT PLUG&PLAY
- Packing Method: Bulk, Other
Find Suppliers by Category Top
Featured Products Top
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The Infineon IR1176 is a compact and efficient low-side gate driver IC, designed to drive MOSFETs and IGBTs with precision and stability. With a non-inverting output and housed in a space-saving 8-SOIC package (read more)
Browse Gate Drivers Datasheets for Nova Technology(HK) Co.,Ltd -
The ADuM4221/ADuM4221-1/ADuM4221-2 are 4 A isolated, half bridge gate drivers that employ the Analog Devices, Inc., iCoupler® technology to provide independent and isolated high-side and low-side outputs. The ADuM4221/ADuM4221-1/ ADuM4221-2 provide 5700 V rms isolation in an increased (read more)
Browse Gate Drivers Datasheets for Richardson RFPD -
The FAN7387MX is a robust, highly integrated gate driver IC tailored for demanding high-voltage applications. By combining critical control, protection, and drive functions into a single device, it enables engineers to build more efficient, reliable, and compact (read more)
Browse Gate Drivers Datasheets for Win Source Electronics -
its Si82Ex/Fx value and performance isolated gate drivers for silicon MOSFET, IGBT, SiC and GaN devices. Skyworks Solutions, Inc. provides an upgrade path for its Si823x (read more)
Browse LED Drivers Datasheets for Skyworks Solutions, Inc. -
-channel functional and reinforced isolated EiceDRIVER™ gate driver IC parts. Enter a new era of efficiency with Infineon. Why GaN from Infineon? What turns Infineon into your best choice when it comes to GaN based solutions? The four pillars of success that make the difference (read more)
Browse Network Equipment Datasheets for DigiKey -
Asymmetric regulated outputs suit IGBT, Si, SiC, and GaN cascode gate drives - It is now simpler than ever to generate power for IGBT, Si, SiC, and GaN cascode gate drivers with RECOM's R24C2T25 DC/DC converter from Richardson RFPD. The SMT part, in a compact 7.5 x 12.83mm 36-pin (read more)
Browse DC-DC Converter Chips Datasheets for Richardson RFPD
Conduct Research Top
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Galvanic isolation for IGBT-Driver
Usually, an IGBT (Insulated Gate Bipolar Transistor) is described in the following way: "An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor". Although this sentence describes the basics very well, in the case of IGBT
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Using NEC Optocouplers as Gate Drivers in IGBT and Power MOSFET Applications
Reviews the characteristics and technical requirements of using an NEC high speed optocoupler to gate drive an IGBT or Power MOSFET.
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Design Considerations in Using the Inverter Gate Driver Optocouplers for Variable Speed Motor Drives - White Paper (.pdf)
Inverter Gate Driver optocouplers are ideally suited for IGBT and MOSFET applications for variable speed motor drives. Their high output peak currents coupled with high voltage safety standards certified galvanic insulation, very high common mode noise rejection isolation, solid state device level
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Determining MOSFET Driver Needs for Motor Drive Applications
driver is normally in the form of a power transistor. This can be a bipolar transistor, MOSFET or an Insulated Gate Bipolar Transistor (IGBT). In some small Brushless DC motor or stepper motor applications, the MOSFET driver can be used to directly drive the motor. For this application note, though
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Optocoupler Performance Comparison: NEC PS9552 vs. Avago HCPL-3120
with hysteresis, and high common mode transient immunity. Applications for these devices include IGBT and power MOSFET gate drivers. In summary, the PS9552 provides all the features and offers performance equivalent to the HCPL-3120. As a result, the PS9552 would be an easy drop-in replacement
More Information Top
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A 0.8 μm BiCMOS Gate Driver for IGBT Power Switch
An effective IGBT gate driver must interface with a microcontroller, have the voltage and current cap- ability to turn-on/off the IGBT [1], and be able to protect the IGBT in fault situations.
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Development of a series of optically isolated and fibre-optic coupled gate drivers for medium and high power IGBTs
As seen above, designing and developing appropriate IGBT gate drivers are by no means a trivial and simple task.
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Turn-on Performance of Reverse Blocking IGBT (RB IGBT) and Optimization Using Advanced Gate Driver
Index Terms—Gate emitter voltage, matrix converter, reverse blocking insulated gate bipolar transistor (RB IGBT ) gate driver , reverse recovery current, turn-ON losses.
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An Experimentally Verified Active Gate Control Method for the Series Connection of IGBT/Diodes
[33] P. J. Grbovic, “An IGBT gate driver for feed-forward control of switch- on losses and reverse recovery current,” IEEE Trans.
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Electrothermal simulation of an IGBT PWM inverter
The electrothermal simulations are performed using the Saber circuit simulator and include control logic circuitry, IGBT gate drivers , the physics-based IGBT electrothermal model, and thermal network component models for the power-device silicon chips, packages, and heat sinks.
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2006 Index
Piezoelectric transformer for integrated MOSFET and IGBT gate driver ; T-PE Jan 06 56-65 Vedula, S.V., see Muthuramalingam, A., T-PE Jul 06 923-932 Venkataramanan, G., see Bingsen Wang, T-PE Jul 06 1053-1061 Vidal-Idiarte, E., L …
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Pressure Tolerant Power Electronics: IGBT Gate Driver for Operation in High Pressure Hydrostatic Environment - DTU Orbit
Pressure Tolerant Power Electronics: IGBT Gate Driver for Operation in High Pressure Hydrostatic Environment .
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Design analysis and improvement of an IGBT gate drive circuit for magnet power supplies using a physics-based circuit model
The IGBT gate driver for the buck converter is controlled by PWM signals.
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A di/dt Feedback-Based Active Gate Driver for Smart Switching and Fast Overcurrent Protection of IGBT Modules
In this paper, a di/dt feedback-based IGBT gate driver is pro- posed for switching performance improvement and short-circuit protection.
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