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Supplier: Utmel Electronic Limited
Description: NXP PMBFJ174,215 P-channel JFET Transistor, 30 V, Idss 20135mA, 3-Pin SOT-23
- V(BR)DSS: 30 volts
- VGS(off): 5 volts
- rDS(on): 85 ohms
- PD: 300 milliwatts
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Transistor Type: JFET
- Polarity: P-Channel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include transistor, BJT, switching, amplification, P-Channel, Bipolar Transistor, JFETs. This listing
- PD: 225 milliwatts
- Transistor Type: Bipolar RF Transistors
- Features: Other
- Polarity: P-Channel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor,
- PD: 350 milliwatts
- TJ: -55 C
- Transistor Type: MOSFET
- Polarity: P-Channel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V. Search-friendly keywords include transistor, BJT, switching, amplification, P-Channel, 30V, Bipolar Transistor, JFETs. This
- PD: 360 milliwatts
- Transistor Type: Bipolar RF Transistors
- Features: Other
- Polarity: P-Channel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, P-Channel, SOT-23, Bipolar
- Transistor Type: Bipolar RF Transistors
- Polarity: P-Channel
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 225mW 2mA@15V P-Channel 30V SOT-23 JFETs ROHS
- IDSS: 2 milliamps
- VGS(off): 0.5 volts
- PD: 225 milliwatts
- TJ: -55 to 150 C
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Supplier: Allied Electronics, Inc.
Description: Silicon P-Channel JFET Transistor General Purpose AF Amplifier Current gate is 10 mA Voltage gate to source cutoff is 7.5 V.
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Supplier: Acme Chip Technology Co., Limited
Description: JFET P-Channel 30V Low Noise
- Transistor Type: JFET
- Features: Other
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans JFET P-CH 3-Pin TO-226AA
- V(BR)DSS: 30 volts
- PD: 360 milliwatts
- Transistor Type: JFET
- Polarity: P-Channel
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Supplier: Linear Systems
Description: LOW NOISE, LOW CAPACITANCE SINGLE P-CHANNEL JFET
- Transistor Type: JFET
- Polarity: P-Channel
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Supplier: RS Components, Ltd.
Description: JFET,p-channel,25V,60mA,SOT23
- Transistor Type: JFET
- Features: Other
- Polarity: P-Channel
- Package Type: SOT23
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Supplier: VAST STOCK CO., LIMITED
Description: JFET JFET P-Channel Reel of 1000
- Transistor Type: JFET
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Supplier: DigiKey
Description: JFET P-Channel 30V 350mW Through Hole TO-92-3
- Features: Other
- Polarity: P-Channel
- Package Type: TO-92
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Supplier: Linear Systems
Description: This dual P-Channel JFET amplifier is designed to provide a balance between very low noise (en = 2.0nV/√Hz) and very low input capacitance (Ciss = 8pF).
- Transistor Type: JFET
- Polarity: P-Channel
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1037502-2SJ03640QL Category: Discrete Semiconductor Products>Transistors - JFETs Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) FET Type: P-Channel Power - Max: 150 mW Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V Current
- VGS(off): 1.5 volts
- rDS(on): 300 ohms
- TJ: 150 C
- Transistor Type: JFET
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Supplier: ODG (Origin Data Global)
Description: JFET P-CH 40V 0.225W SOT23
- VGS(off): 0.75 volts
- TJ: -55 to 150 C
- Transistor Type: JFET
- Features: Other
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Supplier: Utmel Electronic Limited
Description: JFET P-CH 40V 0.225W SOT23
- PD: 200 milliwatts
- Number of Transistors in the Chip: 1
- Transistor Type: JFET
- Features: Other, Tape Reel
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Supplier: Radwell International
Description: JFET JFET P-CHANNEL -40V 50MA 500MW 3MW . FREE 2 YEAR RADWELL WARRANTY
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Supplier: Rochester Electronics
Description: Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Transistor Type: MOSFET RF Transistors
- Features: Other, Tape Reel
- Polarity: P-Channel
- Package Type: SOT23
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 107594-2SK3320-GR Category: Discrete Semiconductor Products Family: Transistors - JFETs Packaging: Reel Mounting Style: SMD/SMT Package: 5-TSSOP, SC-70-5, SOT-353 Manufacturer Device Package: USV FET Type:
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Supplier: Infineon Technologies AG
Description: Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge Simple drive requirements Hermetically sealed Electronically isolated
- V(BR)DSS: -100 volts
- QG: 45 nC
- Transistor Type: MOSFET, Power MOSFET
- Features: Other
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Supplier: Nexperia B.V.
Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology
- V(BR)DSS: 60 volts
- IDSS: 330 milliamps
- VGS(off): 1.6 volts
- rDS(on): 1.6 ohms
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Supplier: New Yorker Electronics Co., Inc.
Description: MOSFET, P-CH, Single, -55A, -20V, PPAK3x3
- V(BR)DSS: -20 volts
- IDSS: -55,000 milliamps
- Transistor Type: MOSFET
- Features: Other, Tape Reel
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Supplier: Texas Instruments
Description: Single P-channel Enhancement-Mode MOSFET 8-SOIC
- Transistor Type: MOSFET
- Polarity: P-Channel
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC
- V(BR)DSS: 12 volts
- IDSS: -16 milliamps
- rDS(on): 270 ohms
- TJ: 0 to 70 C
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Supplier: Infineon Technologies AG
Description: Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBC, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast switching Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Surface mount
- V(BR)DSS: -60 volts
- QG: 3.5999999999999996 nC
- Transistor Type: MOSFET, Power MOSFET
- Features: Other
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology Extended temperature range Tj = 175 °C
- V(BR)DSS: -80 volts
- IDSS: -1,600 milliamps
- VGS(off): -2 volts
- rDS(on): 0.225 ohms
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Supplier: Texas Instruments
Description: Single P-channel Enhancement-Mode MOSFET 8-SOIC
- Transistor Type: MOSFET
- Polarity: P-Channel
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Through Hole 16-PDIP
- V(BR)DSS: -8 volts
- IDSS: -1.83 milliamps
- rDS(on): 1,200 ohms
- TJ: 0 to 70 C
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Supplier: Infineon Technologies AG
Description: P-channel enhancement mode Field-Effect Transistor (FET), -60 V, SOT-23 Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in
- rDS(on): 2 ohms
- TJ: -55 to 150 C
- VGS(off): -2 to -1 volts
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic
- V(BR)DSS: -30 volts
- IDSS: -2,400 milliamps
- VGS(off): -1.5 volts
- rDS(on): 0.12 ohms
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Supplier: Texas Instruments
Description: P-Channel NexFET? Power MOSFET 6-DSBGA -55 to 150
- V(BR)DSS: -20 volts
- rDS(on): 0.033 ohms
- IDSS: -9,500 milliamps
- QG: 3.3999999999999995 nC
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation
- V(BR)DSS: -20 volts
- IDSS: -5,599.999999999999 milliamps
- VGS(off): 0.7 volts
- rDS(on): 0.045 ohms
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Supplier: Texas Instruments
Description: CSD25304W1015 20-V P-Channel NexFET? Power MOSFET 6-DSBGA
- V(BR)DSS: -20 volts
- rDS(on): 0.0325 ohms
- QG: 3.3 nC
- Features: Other
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Current single event effects and radiation damage results for candidate spacecraft electronics
The 2N5114 40V P channel JFET transistor was tested to a total dose of 50 krad(Si) at a dose rate < 1 rad/s.
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MMBFJ175LT1G: P-Channel JFET Transistor, 30 V
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MMBFJ175L: P-Channel JFET Transistor, 30 V
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Complementary logic with 60 nm poly gate JFET for 0.5 V operation
For the first time, complementary logic based on an enhancement mode JFET (cJFET), consisting of n- and p - channel JFET transistors built on bulk silicon and SOI with 60 nm gate length operating at 0.5 V has been demonstrated.
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Enhanced total dose damage in junction field effect transistors and related linear integrated circuits
Schematic cross-section representation of p - channel JFET transistors used in this study.
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An analog/digital BCDMOS technology with dielectric isolation-devices and processes
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