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Supplier: Infineon Technologies AG
Description: -12V Dual P-Channel HEXFET Power MOSFET in a SO-8 package Benefits RoHS Compliant Low RDS(on) Dual P-Channel MOSFET Applications Fuel-cell control unit (FCCU) Designers who used this product also designed with
- Package Type: SO-8, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- QG: 38 nC
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Supplier: Infineon Technologies AG
Description: . Benefits RoHS Compliant Low RDS(on) Low Profile (less than 1.1 mm) Dual P-Channel MOSFET Designers who used this product also designed with BSC123N08NS3 G | N-Channel Power MOSFET BSC016
- Package Type: SO-8, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- TJ: 150 C
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Supplier: Utmel Electronic Limited
Description: P-CHANNEL MOSFET, SOT-23 PACKAGE
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: Infineon Technologies AG
Description: -100V Single P-Channel IR MOSFET in a D2-Pak package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for
- Package Type: TO-263, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- TJ: 150 C
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Supplier: Infineon Technologies AG
Description: -30V Single P-Channel Power MOSFET in a Micro 3 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel, Other
- TJ: 150 C
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Supplier: Utmel Electronic Limited
Description: P-CHANNEL POWER SWITCHING MOSFET
- Polarity: P-Channel
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Supplier: Utmel Electronic Limited
Description: MOSFET -12V P-Channel PowerTrench MOSFET
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: MOSFET Dual P-Channel Nex FET Power MOSFET
- Polarity: P-Channel
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Texas Instruments
Description: Dual P-Channel NexFET? Power MOSFET 9-DSBGA -55 to 150
- IDSS: -24000 milliamps
- Polarity: P-Channel
- QG: 2.9 nC
- rDS(on): 0.0270 ohms
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Supplier: Texas Instruments
Description: Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC
- Polarity: P-Channel
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Supplier: Texas Instruments
Description: Single P-channel Enhancement-Mode MOSFET 8-SOIC
- Polarity: P-Channel
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Supplier: Texas Instruments
Description: Single P-channel Enhancement-Mode MOSFET 8-TSSOP
- Polarity: P-Channel
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Package Type: Other
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: TP5335 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and
- Package Type: SOT23
- Polarity: P-Channel
- VGS(off): -2.4 volts
- rDS(on): 30 ohms
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP
- Package Type: Other
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits High thermal power dissipation capability Suitable for thermally demanding environments due to 175 °C
- Package Type: Other
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC
- IDSS: -16 milliamps
- MOSFET Operating Mode: Enhancement, Other
- Package Type: Other
- Polarity: P-Channel
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Supplier: ODG (Origin Data Global)
Description: SMALL SIGNAL P-CHANNEL MOSFET
- IDSS: 5300 milliamps
- Package Type: Other
- Polarity: P-Channel, Other
- TJ: -55 to 150 C
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Supplier: ODG (Origin Data Global)
Description: P-CHANNEL POWER MOSFET
- Package Type: SO-8, Other
- Polarity: P-Channel, Other
- Transistor Type: MOSFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 20V 30A 18W P Channel DFN-8(3x3) MOSFETs ROHS
- PD: 18000 milliwatts
- Polarity: P-Channel
- V(BR)DSS: 20 volts
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Supplier: Linear Systems
Description: The 3N190 Series Monolithic-Duel, P-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and Switching Applications. Available in TO-78 7L RoHS and Tested Die. All Linear Systems devices are available with
- Polarity: P-Channel
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Supplier: Littelfuse, Inc.
Description: IXTY2P50PA is an AEC-Q101 qualified and PPAP available, -500 V, -2 A, PolarTM P-channel enhancement mode power MOSFET in TO-252 (DPAK) package. The P-channel MOSFET is manufactured using the Polar technology platform resulting in significant reduction in on-state
- Polarity: P-Channel
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans MOSFET P-CH 60V 20A
- IDSS: 20000 milliamps
- Polarity: P-Channel
- V(BR)DSS: 60 volts
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: P-Channel
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Supplier: Rochester Electronics
Description: 30A, 60V, 0.075ohm, P-Channel, Power MOSFET
- Polarity: P-Channel
- rDS(on): 0.0750 ohms
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET -150V P-Channel QFET
- Transistor Type: MOSFET
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Description: P-CHANNEL POWER MOSFET
- Transistor Type: MOSFET
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Supplier: DigiKey
Description: MOSFET
- Package Type: Other
- Polarity: P-Channel
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Supplier: Rochester Electronics
Description: FDMS86163P - P-Channel MOSFET
- Package Type: Other
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: ROHM Semiconductor USA, LLC
Description: MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
- Polarity: P-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: ROHM Semiconductor USA, LLC
Description: RRS090P03FRA is the high reliability automotive MOSFET, suitable for Switching.
- IDSS: -9000 milliamps
- PD: 2000 milliwatts
- Packing Method: Tape Reel
- Polarity: P-Channel
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Supplier: Rochester Electronics
Description: Small Signal, 1A, 80V, P-Channel, MOSFET
- Package Type: Other
- Polarity: P-Channel
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Supplier: Acme Chip Technology Co., Limited
Description: P-CHANNEL POWER MOSFET
- Transistor Type: MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: Discrete Semiconductors, MOSFETs, 12 to 150V MOSFETs, Single-Pch MOSFETs
- IDSS: -15000 milliamps
- PD: 50000 milliwatts
- Package Type: Other
- Packing Method: Tape Reel
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Category: Discrete Semiconductor Products- Transistors -FETs, MOSFETs- Single FETs, MOSFETs Package: Tape & Reel (TR) Cut Tape (CT) Product Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Rds On (Max) @ Id, Vgs:
- PD: 101000 milliwatts
- Package Type: SOT3
- Polarity: P-Channel
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Featured Products Top
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The ALD1107 MOSFET is a high-precision P-channel MOSFET transistor array by Advanced Linear Devices. Its low threshold voltage of -0.7V, low input capacitance, and typical offset voltage of only 2mV make it ideal for analog switching and amplifying (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1105 by Advanced Linear Devices is engineered for precision and performance. It combines the power of an N-channel MOSFET with a P-channel MOSFET in a single package. The transistor pair is matched for minimum offset voltage and differential thermal (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD310702 from Advanced Linear Devices is a monolithic quad P-channel MOSFET array with unrivaled precision in temperature tracking and simplified bias circuitry. The matched pair circuit is designed for the next generation of products requiring extremely low (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1103, by Advanced Linear Devices, is a monolithic dual N-channel and P-channel matched transistor pair designed for precision and versatility. The chip combines the power of N-channel and P-channel MOSFET pairs in one package. This dual configuration is (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Product Overview The 2N7002ET1G from ON Semiconductor is a versatile N-Channel MOSFET designed to meet the needs of a wide range of electronic applications, offering high performance and efficiency. Key Features Drain (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
Infineon Technologies BSS138NH6327XTSA2 Overview N-Channel MOSFET: Suitable for various applications requiring efficient power switching. 60V Drain-Source Breakdown Voltage: Capable of handling high voltages (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
amplifiers, energy harvesting systems, analog timers, and conventional and precision EPAD MOSFET transistors. For more information about Advanced Linear Devices go to www.aldinc.com. Learn More See SAB P (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Features: Type: N-Channel MOSFET Logic-Level Gate Drive: Can be switched with (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
The ALD1115 MOSFET by Advanced Linear Devices is a monolithic complementary N-channel and P-channel transistor pair that is designed for a broad range of analog applications. It contains an N-channel and a P-channel MOSFET in one package. These chips are (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
) Package: TO-236-3, SC-59, SOT-23-3 Max Gate-Source Voltage: ±20V Max Input Capacitance: 5305pF @ 13V Features: N-Channel MOSFET, surface mount High-popularity product, balanced supply and demand (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics
Conduct Research Top
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Using Low Resistance MOSFETs as Load Switches
a resistor and therefore Ohms law applies; when turned off, the MOSFET appears as a diode and as such blocks current in one direction with a very high resistance (if reverse protection is required, an additional MOSFET or blocking diode is required). P-channel MOSFETs are normally used
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Application Note: Output Inductor Selection for the AAT115X Series Buck Converter
input. The AAT115X peak current mode control loop senses the current flowing through the high-side P-channel MOSFET and compares it to the output of the voltage loop error amplifier. Sufficient sensed current slope is important for good noise immunity and a wide duty cycle dynamic range. Moreover
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AN211A: Field Effect Transistors in Theory and Practice, Courtesy of Motorla
. The other terminal is called the drain terminal. Current flow between source and drain is related to the drain-source voltage by the resistance of the intervening material. In Figure 1b, p-type regions have been diffused into the n-type substrate of Figure 1a leaving an n-type channel between the source
More Information Top
Indicates content that may require registration and/or purchase.
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Fundamentals of Nanoscaled Field Effect Transistors
6, the use of biaxial strained silicon technology and some case studies for n channel MOSFET and p channel MOSFET modeling have been taken.
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Fundamentals of Bias Temperature Instability in MOS Transistors
1 Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron X-ray lithography
This paper reports the device char- acteristics and hot-carrier induced instability in n- and p channel MOSFETs patterned using synchrotron X-ray .
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Silicon-on-insulator dynamic threshold ESD networks and active clamp circuitry
By connecting the gate of the n-channel MOSFET to the gate reference voltage V m , and the gate of the p channel MOSFET to a gate reference voltage VDD - V p , a new hybrid active clamp/body-coupled dynamic threshold MOSFET ESD …
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Prediction of CMOS transistor performance at 0.10-&mgr;m gate length using tuned simulations
In this paper, the results of a simulation study carried out to predict the performance of N and P channel MOSFETs having a physical gate length of 0.
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Diagnostics of differential parameters in models of field-effect transistors
The results of identification of parameters and simulation errors of a p channel MOSFET were partly presented in [8, 9].
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NTUD3171PZ: Small Signal MOSFET 20V 150mA 5 Ohm Dual P-Channel SOT-963 with ESD
• Dual P Channel MOSFET .
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NTUD3171PZT5G: Small Signal MOSFET 20V 150mA 5 Ohm Dual P-Channel SOT-963 with ESD
• Dual P Channel MOSFET .
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Prediction of 0.18 um CMOS technology performance using tuned device simulation
The results of a simulation study which is carried out to predict the performance of N and P channel MOSFETs with a physical gate length (Lg) of 0.18 pm are reported in this paper.
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Design Consideration in High Temperature Analog CMOS Integrated Circuits
1) where(P~,q,J = (-2.4mV/K,+1.72V)and(+2.4mV/K, - 1.72 V) for typical n’and p channel MOSFET ’s, respec- tively.