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Supplier: Richardson RFPD
Description: The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
- Operating Frequency: 0.0 to 40 MHz
- Output Power: 750 watts
- Package Type: Other
- Power Gain: 19 dB
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Supplier: Richardson RFPD
Description: The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
- Operating Frequency: 2 to 40 MHz
- Output Power: 750 watts
- Package Type: Other
- Power Gain: 17 dB
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Supplier: Richardson RFPD
Description: The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.
- Operating Frequency: 0.0 to 40 MHz
- Output Power: 750 watts
- Package Type: Other
- Power Gain: 15 dB
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Supplier: Richardson RFPD
Description: The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL
- Operating Frequency: 0.0 to 45 MHz
- Output Power: 300 watts
- Package Type: Other
- Power Gain: 17 dB
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Supplier: Emhiser Research, Inc.
Description: In addition to Emhiser Research, Inc.'s line of miniature RF power amplifiers, Emhiser's acquisition of the military RF power amplifier product line from the former Chesapeake Microwave Corporation allows us to better serve the RF amplifier
- Amplifier Type: Power Amplifier
- Frequency Range: 1435 to 2400 MHz
- Input VSWR: 1 :1
- Maximum Gain: 1.5 dB
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Supplier: Emhiser Research, Inc.
Description: In addition to Emhiser Research, Inc.'s line of miniature RF power amplifiers, Emhiser's acquisition of the military RF power amplifier product line from the former Chesapeake Microwave Corporation allows us to better serve the RF amplifier
- Amplifier Type: Power Amplifier
- Frequency Range: 1435 to 2400 MHz
- Input VSWR: 1 :1
- Maximum Gain: 1.5 dB
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Supplier: Emhiser Research, Inc.
Description: In addition to Emhiser Research, Inc.'s line of miniature RF power amplifiers, Emhiser's acquisition of the military RF power amplifier product line from the former Chesapeake Microwave Corporation allows us to better serve the RF amplifier
- Amplifier Type: Power Amplifier
- Frequency Range: 1435 to 2400 MHz
- Input VSWR: 1 :1
- Maximum Gain: 1.5 dB
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Supplier: Emhiser Research, Inc.
Description: In addition to Emhiser Research, Inc.'s line of miniature RF power amplifiers, Emhiser's acquisition of the military RF power amplifier product line from the former Chesapeake Microwave Corporation allows us to better serve the RF amplifier
- Amplifier Type: Power Amplifier
- Frequency Range: 1435 to 2400 MHz
- Input VSWR: 1 :1
- Maximum Gain: 1.5 dB
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Supplier: DigiKey
Description: RF TRANSISTOR 15W 28V 8QFN
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 30 to 1215 MHz
- Maximum Gain: 20.9 dB
- Maximum Operating Voltage: 32 volts
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Supplier: ValueTronics International, Inc.
Description: generation LDMOS Transistors provide reliable brute-power performance at frequencies up to 1000 MHz. The CMC-1000 RF power amplifiers feature heavy-duty individually shielded aluminum housings at the module level. This concept of a shielded modular design minimizes
- Frequency Range: 1000 MHz
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Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power pallet amplifier products designed for applications from1.0 GHz to 3.5 GHz. Our high power pallets are ideal for civil avionics, radar, and industrial, scientific, and medical applications. Our all gold
- Operating Frequency: 2700 to 3500 MHz
- Output Power: 130 to 300 watts
- Package Type: Other
- Power Gain: 7 to 8 dB
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Supplier: APITech
Description: . Typical current draw from a nominal +28 VDC supply at rated output power is 8 A. This design offers an isolator protected output to guard against transistor failure due to infinite VSWR mismatch. API has incorporated an array of control and monitoring features including
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number IB2856S250 is designed to operate in class C mode. This common base device supplies a minimum of 250 watts of peak pulse power under the conditions of 12ìs pulse width and 3% duty cycle. All devices are 100% screened for large signal
- Operating Frequency: 2856 MHz
- Output Power: 250 watts
- Package Type: Other
- Power Gain: 10.5 dB
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz Hermetically sealed microwave package
- Packing Method: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Skyworks Solutions, Inc.
Description: ) Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65137-11 ideal for Wireless Local Area Network (WLAN) applications. The device is fabricated using Skyworks high reliability Indium Gallium Phosphide (InGaP) Heterojunction
- Amplifier Type: Power Amplifier
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Supplier: ODG (Origin Data Global)
Description: NARROW BAND HIGH POWER AMPLIFIER
- Operating Frequency: 1800 to 2200 MHz
- Package Type: Other
- Polarity: Other
- Power Gain: 28.5 dB
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Supplier: Qorvo
Description: Qorvo's SZM-5066Z is a high-linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost, surface-mountable, plastic QFN multi-chip module package. The SZM-5066Z is designed for 802.11a/n in the 4.9GHz to 5.85GHz bands and can operate from a single voltage
- Amplifier Type: Power Amplifier
- Frequency Range: 5100 to 5900 MHz
- Maximum Gain: 33 dB
- Minimum Gain: 33 dB
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Supplier: Rohde & Schwarz USA, Inc.
Description: The R&S®BBA130 broadband amplifiers offer a variety of setting options so you can optimally tune the output signal to your specific application. During operation, you can adjust the operating class for transistors between Class A and Class AB as well as choose between maximum output
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 6 to 80 MHz
- Gain Flatness: 3.8 dB
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Supplier: Qorvo
Description: Qorvo's QPD0050 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0050 can be used in Doherty architecture for the final stage of a base station power amplifier for small
- Operating Frequency: 0.0 to 3600 MHz
- Power Gain: 22.5 dB
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Supplier: Microchip Technology, Inc.
Description: applications. The amplifier provides a 15 dB of gain with a rising slope, 3.5 dB noise figure, and 27 dBm of output power at 3 dB gain compression with the nominal bias of 235 mA from a 10 V supply. Output IP3 is typically 35 dBm. The MMA052AA amplifier is DC coupled and
- Package Type: Other
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40120P is an unmatched, gallium-nitride (GaN), high-electron-mobili ty transistor (HEMT). The CGH40120P, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
- Operating Frequency: 3000 MHz
- Output Power: 120 watts
- Package Type: Other
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Supplier: PTB Sales, Inc.
Description: Seren IPS Industrial Power Systems R3027W is from the R3001 and L3001 line of RF power supplies. Seren “R Series” products utilize Field-Effect Transistors in the exciter and power amplifier stages. The unit operates in a class AB mode providing power
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Supplier: Infineon Technologies AG
Description: The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 50 to 10000 MHz
- Noise Figure: 0.4000 dB
- Nominal Operating Current: 0.0021 to 0.0250 amps
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Supplier: Win Source Electronics
Description: Manufacturer: Intersil Corporation Win Source Part Number: 1158737-CA3140AE Manufacturer Homepage: www.intersil.com/cda /home RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited Application Field: Used in Automotive, Portable
- Package Type: SOT3
- Transistor Type: Bipolar RF Transistors, MOSFET
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Supplier: Linear Systems
Description: The LS318 Log Conformance, Monolithic Dual, NPN Transistor is a direct replacement for Micro Power Systems MP318 Series. It is ideal for Log Conformance, Transistors Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC 8L ROHS,
- Package Type: Other
- Polarity: NPN
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40180PP is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40180PP, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
- Package Type: Other
- Transistor Type: HEMT
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Supplier: RS Components, Ltd.
Description: GaAs FET RF transistors are ideal for the first or second stage of base station Low Noise Amplifiers (LNA). The specifications exhibit an excellent combination of low noise figure and enhanced linearity. These GaAs MESFET RF transistors from Avago Technologies are
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 6000 MHz
- Maximum Gain: 17.2 dB
- Minimum Gain: 17.2 dB
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Supplier: Acme Chip Technology Co., Limited
Description: PNP LOW FEQUENCY POWER AMPLIFIER
- Packing Method: Bulk Pack, Other
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number IB3000S200 is designed to operate in class C mode. This common base device supplies a minimum of 200 watts of peak pulse power under the conditions of 12ìs pulse width and 1% duty cycle. All devices are 100% screened for large signal
- Operating Frequency: 3000 MHz
- Output Power: 200 watts
- Package Type: Other
- Power Gain: 9.4 dB
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Supplier: Comdel, Inc.
Description: Solid, Reliable Engineering that Improves Process Results Performance: With millions of hours in the field, Comdel’s CPS series generators have proven their ability to withstand erratic loads. Patented S-Technology provides optimized amplifier performance
- AC Input Voltage: 115 to 230 volts
- DC Output Power: 500 watts
- Features: Adjustable Frequency, Pure Sine Output
- Form Factor: Rack Mount
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Supplier: Nexperia B.V.
Description: leads Replaces two SC-75/SC-89 packaged transistors on same PCB area Reduced required PCB area Reduced pick and place costs. Applications General purpose switching and amplification Complementary MOSFET driver for switch mode power supply Complementary driver for audio
- IC(max): 100 milliamps
- Operating Frequency: 100 MHz
- PD: 200 milliwatts
- Package Type: Other
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versatile transistor excels in high-temperature environments with a junction temperature range from -65°C to 200°C, ensuring durability and reliable performance. Its versatility makes it an ideal choice for use in RF circuits, power regulation, switching applications, and more. Designed with (read more)
Browse RF Transmitters Datasheets for LIXINC Electronics Co., Limited -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
Family of RF Power Macro GaN Transistors from NXP (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
perform optimally in customer-specific circuits and improve your production yields. Also, several RF and DC power circuits can be improved if the transistors are DC matched for specific characteristics. Let Richardson RFPD perform this testing for you, and ensure you are only purchasing product that will work in your system (read more)
Browse RF Transistors Datasheets for Richardson RFPD -
available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
-pull amplifiers, and RF power amplifiers. Power amplifiers are typically found in the final output stages of a circuit. There are five classes of power amplifiers: Class A, B, AB, C, and D. Let’s take a look at the characteristics of each. Class A power amplifiers’ (read more)
Browse RF Amplifiers Datasheets for ASAP Semiconductor LLC -
experienced in the design and development of high power amplifier modules and systems for C-UAS and EW. UAS represent a rapidly growing, low-cost, high-reward surveillance and attack threat to military and civilian personnel and infrastructure (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD
Conduct Research Top
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AN721: Impedance Matching Networks Applied to RF Power Transistors, Courtesy of Motorola
be considered as a corollary of the matching circuit. Matching is necessary for the best possible energy transfer from stage to stage. In RF-power transistors the input impedance is of low value, decreasing as the power increases, or as the chip size becomes larger. This impedance must be matched
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Microwave RF: GaN Devices Raising the Output-Power Performance Bar
Solid-state power comes in many forms, although the fastest-growing high-frequency, high-power semiconductor technology may be based on gallium nitride (GaN). GaN power transistors have long been the active-device building blocks for linear and compressed power amplifiers in L- and S-band military
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
licensing objectives. Xemod is a privately held, fabless maker of RF power amplifier modules and components based on lateral double-diffused transistor (LDMOS) technology. The company is based in Tempe, Arizona. Nvidia's profits plunge on soaring sales SANTA CLARA, Calif. -- Profits at graphics chip
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Class E high-efficiency tuned power oscillator
RF power tran- sistor amplifier ,” .
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Stability problems in transistor power amplifiers
Most RF transistor power amplifiers are oper- ating in the frequency range D which isagain uncondition- ally stable (stability factor S> 1).
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Class-E amplifier with an inductive impedance inverter
J. Ebert and M. Kazimierczuk, “High efficiency RF power transistor amplifier ,” Bull.
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Class-E DC/DC converters with a capacitive impedance inverter
J. Ebert and M. Kazimierczuk, “High efficiency RF power transistor amplifier ,” Bull.
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A Wideband Balun for HF, VHF, and UHF Applications
[4] O. Pitzalis and T. P. M. Couse, “Broadband transformer design for RF transistor power amplifiers ,” in Proc.
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Reliability of polynomial I/sub DS/-V/sub GS/-V/sub DS/ model fitted using harmonic-balance simulation
However, the fitting of IDS-VGS-VDS cur- rent source of LDMOS RF power transistor amplifier suffers from high correlation between controlling voltages VGS and VDS.
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Exact analysis of class E tuned power amplifier at any Q and switch duty cycle
J. Ebert and M. Kazimierczuk, “High efficiency RF power tran- sistor amplifier ,” Bull.
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Collector amplitude modulation of the class E tuned power amplifier
J. Ebert and M. Kazimierczuk, “High efficiency RF power transis- tor amplifier ,” Bull.
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A PISO JCCD filter with high-speed linear charge injection
“High efficiency RF power tran- sistor amplifier ;’ .
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Effects of the collector current fall time on the class E tuned power amplifier
“High efficiency RF power tran- sistor amplifier ;’ .