Products & Services
See also: Categories | Featured Products | Technical Articles | More Information-
Supplier: Richardson RFPD
Description: The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
- Operating Frequency: 0.0 to 40 MHz
- Output Power: 750 watts
- Package Type: Other
- Power Gain: 19 dB
-
Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power
- Transistor Type: MOSFET RF Transistors
-
Supplier: Richardson RFPD
Description: The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
- Operating Frequency: 2 to 40 MHz
- Output Power: 750 watts
- Package Type: Other
- Power Gain: 17 dB
-
-
Supplier: Richardson RFPD
Description: The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.
- Operating Frequency: 0.0 to 40 MHz
- Output Power: 750 watts
- Package Type: Other
- Power Gain: 15 dB
-
Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our high power bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial,
- Operating Frequency: 1 to 3500 MHz
- Output Power: 0.7000 to 1000 watts
- Package Type: Other
- Polarity: NPN
-
Supplier: MACOM
Description: At MACOM we offer a broad range of TMOS and DMOS RF power MOSFET transistor products as discrete devices from DC to 1.0 GHz. Our high power MOSFET transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical
- Operating Frequency: 5 to 1000 MHz
- Output Power: 2 to 600 watts
- Package Type: Other
- Power Gain: 8 to 21 dB
-
Supplier: ODG (Origin Data Global)
Description: RF POWER TRANSISTOR
- Transistor Type: Bipolar RF Transistors
-
Supplier: Northrop Grumman Corporation
Description: systems. Low thermal resistance and high efficiency couple to provide nearly imperceptible droop across the entire TDMA burst waveform at power levels of over 200 watts. WPTB64A1011Ax Class C 1030/1090 MHz Bipolar RF Transistor The WPTB64A1011Ax is an application specific
- Operating Frequency: 960 to 1215 MHz
- Power Gain: 7.4 to 9 dB
- TJ: 200 C
- Transistor Grade / Operating Range: Military
-
Supplier: ODG (Origin Data Global)
Description: ON5040 - RF POWER TRANSISTOR (AM
- Transistor Type: Bipolar RF Transistors
-
Supplier: Utmel Electronic Limited
Description: POWER BIPOLAR TRANSISTOR
- Transistor Type: Bipolar RF Transistors
-
Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET Power HV6 44W W/CDMA
- Output Power: 44 watts
- Packing Method: Tape Reel, Other
- Power Gain: 15.5 dB
- Transistor Type: MOSFET RF Transistors
-
Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1036409-2N5551HR Number of Pins: 3 Categories: RF Transistors(BJT) Popularity: Low Fake Threat In the Open Market: 34 pct. Supply and
- Output Power: Up to 0.3600 watts
- Package Type: SOT3
- TJ: -65 C
- Transistor Type: Bipolar RF Transistors
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT POWER TRANSISTOR
- Transistor Type: Bipolar RF Transistors
-
Supplier: Toshiba America, Inc.
Description: Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices. Transistors Bipolar Transistors Bias Resistor Built-in Transistors (BRT) IGBTs IEGT (PPI & PMI) Multi-Chip Discrete
- Transistor Type: General Purpose BJT, Bipolar RF Transistors, IGBT
-
Supplier: Win Source Electronics
Description: Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Package: Tape & Reel (TR) Standard Package: 100 Voltage - Rated: 65 V Frequency: 2.45GHz Current - Test: 10 mA Gain: 13.3dB Transistor Type: LDMOS (Dual), Common Source
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
-
Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number IB2856S250 is designed to operate in class C mode. This common base device supplies a minimum of 250 watts of peak pulse power under the conditions of 12ìs pulse width and 3% duty cycle. All devices are 100% screened for large signal
- Operating Frequency: 2856 MHz
- Output Power: 250 watts
- Package Type: Other
- Power Gain: 10.5 dB
-
Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz Hermetically sealed microwave package Applications
- Packing Method: Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Package Type: Other
- Polarity: N-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
-
Supplier: Integra Technologies, Inc.
Description: devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. The use of external tuners is not allowed during screening. This device is rated for a peak output power level of PPEAK = 500W @ 10% duty factor. This corresponds to an
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: NPN
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: 160V 2.25W 80@10mA,5V 600mA NPN PowerDI-5 Bipolar Transistors - BJT ROHS
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
-
Description: RF POWER TRANSISTOR
- Packing Method: Bulk Pack, Other
-
Supplier: Rochester Electronics
Description: Bipolar Power Transistors
- Transistor Type: Bipolar RF Transistors, Power MOSFET
-
Supplier: Rochester Electronics
Description: RF Power Bipolar Transistor, PNP, TO-126
- Package Type: Other
- Polarity: PNP
- Transistor Type: Bipolar RF Transistors
-
Supplier: Utmel Electronic Limited
Description: POWER BIPOLAR TRANSISTOR, PNP
- Number of Transistors in the Chip: 1
- Output Power: 1.5 watts
- Packing Method: Tape Reel, Other
- Polarity: Other, PNP
-
Supplier: Radwell International
Description: TRANSISTOR RF POWER 8AMP 16V. FREE 2 YEAR RADWELL WARRANTY
-
Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET Power 60W 1GHZ FET TO-270
- Number of Transistors in the Chip: 1
- Operating Mode: Enhancement, Other
- Output Power: 60 watts
- Packing Method: Tape Reel, Other
-
Supplier: VAST STOCK CO., LIMITED
Description: RF MOSFET Transistors RF Power
-
Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1024421-BD709 Mounting: SMD (SMT) Polarity: NPN Gain Bandwidth Product: 3 MHz Number of Pins: 3 Categories: RF Transistors(BJT) Case
- Output Power: Up to 75 watts
- PD: 75000 milliwatts
- Package Type: TO-220, SOT3, Other
- Polarity: Other, NPN
-
Supplier: DigiKey
Description: RF Transistor NPN 16V 500mA 175MHz 3W Surface Mount Power Macro
- Package Type: Other
- Polarity: NPN
-
Supplier: Qorvo
Description: Qorvo's QPD0050 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0050 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and
- Operating Frequency: 0.0 to 3600 MHz
- Power Gain: 22.5 dB
-
Supplier: ODG (Origin Data Global)
Description: HIGH POWER RF TRANSISTOR
- Operating Frequency: 1.8 to 500 MHz
- Package Type: Other
- Power Gain: 22.5 dB
-
Supplier: Emhiser Research, Inc.
Description: In addition to Emhiser Research, Inc.'s line of miniature RF power amplifiers, Emhiser's acquisition of the military RF power amplifier product line from the former Chesapeake Microwave Corporation allows us to better serve the RF amplifier needs of our present and
- Amplifier Type: Power Amplifier
- Frequency Range: 1435 to 2400 MHz
- Input VSWR: 1 :1
- Maximum Gain: 1.5 dB
-
Supplier: Win Source Electronics
Description: Manufacturer: Freescale Semiconductor - NXP Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1231183-MRF9180 Number of Pins: 5 Categories: Transistors - FETs, MOSFETs - RF Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and
- Package Type: SOT3
-
Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are
- Output Power: 0.8000 watts
- Package Type: TO-39
- Polarity: PNP
- TJ: -65 to 200 C
Find Suppliers by Category Top
Featured Products Top
-
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
versatile transistor excels in high-temperature environments with a junction temperature range from -65°C to 200°C, ensuring durability and reliable performance. Its versatility makes it an ideal choice for use in RF circuits, power regulation, switching applications, and more. Designed with (read more)
Browse RF Transmitters Datasheets for LIXINC Electronics Co., Limited -
Family of RF Power Macro GaN Transistors from NXP (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
perform optimally in customer-specific circuits and improve your production yields. Also, several RF and DC power circuits can be improved if the transistors are DC matched for specific characteristics. Let Richardson RFPD perform this testing for you, and ensure you are only purchasing product that will work in your system (read more)
Browse RF Transistors Datasheets for Richardson RFPD -
Principle Low Dropout Regulators (LDOs) mainly ensure that the output voltage is steady. This output voltage is higher than the input power. It usually uses a P-channel MOSFET or a PNP bipolar junction transistor (BJT) to drive it carefully. This keeps it just under the set (read more)
Browse General Purpose Diodes Datasheets for ODG (Origin Data Global) -
RIAA phono stages: tube and transistor designs Switching power supply design and manufacture Automated PCV assembly including surface mount and through-hole components Manual assembly and soldering with trained and certified operators (read more)
Browse Audio Transformers Datasheets for Triad Magnetics
Conduct Research Top
-
AN721: Impedance Matching Networks Applied to RF Power Transistors, Courtesy of Motorola
be considered as a corollary of the matching circuit. Matching is necessary for the best possible energy transfer from stage to stage. In RF-power transistors the input impedance is of low value, decreasing as the power increases, or as the chip size becomes larger. This impedance must be matched
-
Silicon RF Power MOSFETS
Silicon RF Power MOSFETS. Providing general guidelines for understanding the design and operation of the transistors, this book describes the physics, design considerations and RF performance of silicon power MOSFETs.
-
RF Power: GaN Moves In for the Kill
papers, analyst reports, and corporate brochures. After all, GaN has at least ten times the power density per millimeter of transistor gate periphery, higher operating voltages (reducing impedance transformation issues), higher efficiency, and the ability to combine high RF power output over broad
-
Microwave RF: GaN Devices Raising the Output-Power Performance Bar
Solid-state power comes in many forms, although the fastest-growing high-frequency, high-power semiconductor technology may be based on gallium nitride (GaN). GaN power transistors have long been the active-device building blocks for linear and compressed power amplifiers in L- and S-band military
-
Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
-
EETimes.com | Electronics Industry News for EEs & Engineering Managers
licensing objectives. Xemod is a privately held, fabless maker of RF power amplifier modules and components based on lateral double-diffused transistor (LDMOS) technology. The company is based in Tempe, Arizona. Nvidia's profits plunge on soaring sales SANTA CLARA, Calif. -- Profits at graphics chip
More Information Top
Indicates content that may require registration and/or purchase.
-
http://www.nxp.com/documents/handbook/RF_Fundamentals.pdf
The emitter of an RF power transistor must be dimensioned such that the transistor can deliver the required output power with all performance-degrading effects such as capacitances minimized.
-
RF Power Amplifiers
RF Power Transistors 339 .
-
Page 1. Semiconductor parts with 107 in root number
NPN SILICON RF POWER TRANSISTOR .
-
http://www.nxp.com/documents/handbook/SC19_RF_POWER_TRANS_CHAR_1.pdf
RF power transistors characteristics .
-
http://www.nxp.com/documents/selection_guide/75016687.pdf
We’ve updated the content on RF small-signal products, and have added a new section on RF power transistors .
-
Page 4. Semiconductor parts with 100 in root number
NPN silicon RF power transistor .
-
Page 3. Semiconductor parts with 191 in root number
12 watts, 1.78-1.92 GHz RF power transistor .
-
http://www.nxp.com/documents/selection_guide/75017428.pdf
Also included are next-generation devices and enhanced products such as 8th generation LDMOS transistors (Gen8), GPS LNAs, wireless infrastructure LNAs, satellite downconverters, CATV power doublers, overmolded plastic (OMP) RF power transistors , GaN power amplifiers, and low-power wireless microcontrollers.
-
Subject index
Kim, S.J., +, MWSYM-03 2003 627-630 vol.1 Analytic expressions for optimum source & load impedance and assoc. large-sig. gain of RF power transistor .
-
Lateral Power Transistors in Integrated Circuits
A. Wood, W. Brakensiek, C. Dragon, W. Burger, 120 Watt, 2 GHz, Si LDMOS RF power transistor for PCS base station applications, in IEEE MTT-S International Microwave Symposium (Baltimore, USA, 1998) 14.