Semiconductor Etch

Description: Copper seed layer etchant providing selective etch and high loading capacity for UBM and RDL applications. Used also for selective Cu/Ni in UBM stack because of its great etching metal selectivity.

• Type: Etchant / Pickle, Surface Treatment
• Industry Applications: Semiconductor Wafer / Cleanroom

Description: ensuring strong adhesion to the substrate. This robust, stable process delivers consistent etch rates across a broad operating window, accommodating variations in copper type, sulfuric acid concentration, temperature, and additive levels. CircuEtch 300 excels in etching a variety of copper

• Industry: Electronics, Semiconductors / IC Packaging

Description: Based on our popular BT-1, it shares the same robust and reliable characteristics while providing yet another example of Plasma Etch surface modification innovation. The large all aluminum chamber accommodates a generously sized circular, rotating active processing surface has the option of

• Features: Automated Loading, Gas Control Unit, Integral Process Controller, Other
• Materials Processed: Compound Semiconductors / GaAs, Metal, Tungsten / Refractory Metal
• Type: Factory / Free Standing
• Vacuum / Pressure Range: Medium (< 1, >10-3 torr)

Description: Spectrophotometric determination of etch rate of mixtures for etching silicon dioxide coatings for use in semiconductor technology

Description: Used to deoxidize/activate copper based parts prior to electroplating.

• Type: Etchant / Pickle
• Industry Applications: Semiconductor Wafer / Cleanroom

Description: Rapid increases in aerial densities of HDD (Hard Disk Drive) requires advanced patterning solutions for thin film head production. This brings leading-edge semiconductor processes into the HDD industry as a breakthrough. Magnetic Head Etch System E-6000 Series: the EMCP (Electro

• Applications: Etching - Plasma / Wet
• Mounting / Loading: Floor Mounted / Stand-alone

Description: Low Cost, High Copper Capacity Compared to Generic Sodium Persulfate.

• Type: Cleaner / Cleaning Agent
• Industry Applications: Semiconductor Wafer / Cleanroom

Description: Gravimetric determination of etch rate of mixtures for etching silicon single crystals for use in semiconductor technology

Description: compensates for boil-off to maintain consistent chemistry temperature and acid/water ratio Includes etch-foil resistance heater and vapor thermocouple (for chemical boiling control) 360° nitrogen-purged housing seal reduces acid penetration of heating element for extended service

Description: flex circuits, and a myriad of thermal sensors and over-temperature devices; such as thermistors, RTDs, thermocouples, thermostats, thermal fuses, and semiconductor-type components. Firm-A-Graphics Thermal Circuits is committed to Total Customer Satisfaction and complying with the

• Industry Served: Aerospace, Automotive, Electronics, Food and Beverage, General Industrial, Medical, Military, Other
• Services: Design Assistance
• Features: North America, Northeast US Only, United States Only

Description: Built as an extension of our MK-II platform, it offers you the same repeatability, reliability and long life, as well as low maintenance costs. The Reactive Ion Etch (RIE) electrode offers the highest directional plasma effect. Etching with our roll to roll plasma etcher in the large all

• Materials Processed: Compound Semiconductors / GaAs, Metal, Tungsten / Refractory Metal
• Features: Gas Control Unit, Integral Process Controller, Other
• Vacuum / Pressure Range: Medium (< 1, >10-3 torr)
• Process: Plasma Etching / Cleaning

Description: Continuously filters process chemistry to increase purity and maximize product yield Reduced acid consumption generally pays for bath in three months Select semiconductor-grade natural polypropylene or PVDF seamless process tank 360° serrated overflow weir enhances particulate removal

Description: IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. Introduction to Semiconductor Manufacturing Technologies, Second Edition thoroughly describes the

Description: The ST-037-022-5000N is a Silicon Semiconductor "N"-doped bulk type Temperature Sensing Element that develops a large resistive change with temperature. This thermoresistive device is etched from a solid piece of doped material and has a minimum of molecular slippages and/or dislocations

• Operating Temperature: -100 to 400 F
• Nominal Resistance: 2,800 to 6,900 R₀ @ 0° C

Description: For semiconductor liquid chemical processes A compact refractometer with an ultra-pure modified PTFE flow cell body for semiconductor liquid chemical processes. Connected to the process by a ¼ — 1 inch pillar or flare fitting. Vaisala K-PATENTS® Semicon Refractometer PR-23-MS has a

• RI Range: 1.26 to 1.53
• Operating Temperature: -20 to 45 C
• Prism / Light Source & Special Features: Alarms, Automatic Temperature Compensation, Measures Temperature
• Monitoring: Continuous

Description: Recommended where a more aggressive etch is required.

• Type: Etchant / Pickle
• Industry Applications: Semiconductor Wafer / Cleanroom

Description: The m924 (4channel) and m922 (2channel) Semiconductor OEM modules are the newest Luxtron products for Etcher and Wafer Fab equipment temperature monitoring of Electrostatic Chucks, Chambers and other devices. The m920 Series modules are high performance solutions that are flexible, reliable

• Temperature Range: -49 to 626 F
• Operating Temperature: 32 to 140 F
• Electrical Output: Current, Serial
• Technology: Optical Pyrometer

Description: Semitron® MPR 1000 shapes possess excellent heat resistance and low rates of erosion in plasma chambers. Due to these characteristics, it is often chosen for vacuum chamber applications within etch, CVD, and ion implant sub segmentations in the semiconductor and electronics industry.

• Tensile Strength (Break): 15,000 psi
• Tensile Modulus: 1,000 ksi
• Use Temperature: 500 F
• Industry: Electronics, Semiconductors / ICs

Description: The new Edwards STPA2503C turbo pump has been designed to accommodate the high gas flows required by the next generation of semiconductor and thin film etch processes. The enhanced rotor design, half rack controller and battery free d.c. drive operation provide considerable space

• Ultimate Operating Vacuum: 0.00000000750063755419 torr
• Pumping Speed: 3,390.208005262912 to 5,297.2000082233 CFM
• Type: AC Three Phase
• Application: Analytical / Scientific, General Purpose / Industrial, Semiconductor Manufacturing

Description: Ebara's GCR abatement systems cleanly and efficiently remove carbon monoxide and PFC gases from ashing and oxide etch semiconductor waste streams. The standard GCR model targets CO gases using a high temperature oxidation path. PFC's such as CF4 are decomposed using an optional metal

• Type: Factory / Free Standing
• Applications: Semiconductor Manufacturing

Description: Product Overview MultiBond 500 is a first-generation, low-etch oxide alternative designed for laser direct drill pretreatment and reliable innerlayer adhesion in multilayer circuit boards, specifically for Semi-Additive Process (SAP) and Modified Semi-Additive Process (mSAP) applications. Due

• Industry: Electronics, Semiconductors / IC Packaging
• Substrate Compatibility: Metal
• Features: Other

Description: processing of thin core innerlayers. It is the ideal bonding process for controlled impedance innerlayers on advanced resin systems. With up to an 80% reduction in concentrated copper waste and low etch depth, MultiBond MP is the industry’s choice for innerlayer manufacturing.

• Industry: Electronics, Semiconductors / IC Packaging

Description: semiconductor industry. Standard availability is described below. Other sizes and tolerances are quoted on request.

• Overall Width / OD: 0.25 to 12 inch
• Overall Thickness: 0.001 to 0.005 inch
• Applications: Aerospace / Aircraft (AQ), Electronics / RF-Microwave
• Features: Corrosion Resistant, Molybdenum / Molybdenum Alloy, Non-ferrous - Any Type, Other

Description: Negative photoresist series well suited for e-beam and deep UV exposure in the manufacturing of semiconductor devices. High resolution capability (~ 40 – 50 nm) High wet and dry etch resistance Aqueous alkaline development Easy to remove

• Applications: Electronics / Microelectronics
• Thick Film Type: Resistor

Description: SMO) • Mask write, corrections, process compensation (MPC) • Mask blanks, defects and metrology (materials, process, control) • Mask process (resist, devlop, etch, cleans) • Metrology (CD, placement, AFM, AIMS) • Defects and defect control: inspection, repair, verification strategies,

• Frequency: Annually
• Type: Conference, Exhibition
• Industry: Electronics and Semiconductor

Description: acrylic backing (pressure-sensitive tape). Applications include capacitor films, spacers, electrical insulation components, PCBs, flexible circuits, cap liners, plungers, stoppers, protective liners, gaskets, diaphragms, semiconductor processing components, expansion joint liners and sleeves,

• Overall Thickness: 0.0015 to 0.25 inch
• Overall Width: 72 inch
• Overall Width / O.D.: 72 inch
• Material Type: Dielectric / Electrically Insulating

Description: plasma etch equipment, primarily in the etch chamber. The rings are strategically positioned to optimize plasma distribution and maintain uniformity during the etching process. Semiconductor manufacturing processes demand operation within cleanroom environments, especially for

• Features: Alumina / Aluminum Oxide, Specialty Ceramic

Description: CoorsTek provides high-performance, critical-duty ceramic components for Flat Panel Display (FPD) manufacturing from a range of specialized, high-purity engineered ceramics. Large-scale synthetic quartz LCD photomask substrates Etch processing components CVD deposition processing Ultra-flat

• Density: 3.72 to 5.91 g/cc
• Thermal Conductivity: 5 to 31 W/m-K
• Coeff. of Thermal Expansion (CTE): 8 to 10 µm/m-C
• MOR / Flexural Strength: 43,511.0518071591 to 94,273.945582178 psi

Description: or retrofitting existing systems for abatement. Benefits Generates high reactive specie fluxes, delivering higher destruction efficiency Etch gas abatement solution that meets regulatory or green initiative goals Increases pump lifetime by reducing particulates from deposition processes

• Type: RF Plasma (ICP)
• Materials / Substrates: Semiconductors / Wafers
• Features: Specialty / Other

Description: As in all Plasma Etch systems a capacitive parallel plate design is used for the most effective plasma generation. Competitive units with glass/quartz barrel chambers cannot penetrate the vacuum containment vessel and therefore are restricted to inductive coupling using an RF coil wrapped

• Materials Processed: Compound Semiconductors / GaAs, Metal, Tungsten / Refractory Metal
• Features: Integral Process Controller, MEMS, Medical, Other, Photovoltaic / Solar, Research / Surface Analysis, Semiconductor Manufacturing
• Type: Laboratory / Benchtop
• Vacuum / Pressure Range: Medium (< 1, >10-3 torr)

Description: Our welded aluminum vacuum chamber encloses a generous 500 square inches of active plasma processing surface. Surface modification with Plasma Etch yields increased bond strength and cleanliness of most any surface material.

• Materials Processed: Compound Semiconductors / GaAs, Metal, Tungsten / Refractory Metal
• Features: Gas Control Unit, Integral Process Controller, Other
• Type: Laboratory / Benchtop
• Vacuum / Pressure Range: Medium (< 1, >10-3 torr)

Description: TXRF analysis can gauge contamination in all fab processes, including cleaning, litho, etch, ashing, films, etc. The TXRF 3760 can measure elements from Na through U with a single-target, 3-beam X-ray system and a solid-state detector system. The TXRF 3760 includes Rigaku's patented XYθ

• Maximum Wafer / Part Size: 200 mm
• Measurements: Area Mapping, Particle Contamination
• Mounting / Loading: Floor Mounted / Stand-alone
• Form Factor: Monitor / Instrument

Description: increases the maximum process flow capability and reduces the effects of corrosion and deposition. The outstanding performance is suited to both light and harsh applications, such as semiconductor etch, implant, lithography and LCD processes.

• Ultimate Operating Vacuum: 0.0000000750063755419 torr
• Pumping Speed: 4,873.424007565436 to 6,780.416010525824 CFM
• Type: AC Three Phase
• Application: Chemical / Corrosive Gas, General Purpose / Industrial, Semiconductor Manufacturing

Description: DW 212 is a film , skived from virgin PTFE, that has been etched on one side with sodium naphthalene. This surface treatment allows PTFE, which normally exhibits very poor adhesion, to be bonded to other materials. APPLICATION INFORMATION The major applications for sodium etched PTFE involve

• Width: 12 to 38 inches
• Thickness: 0.002 to 0.04 inches
• Temperature Resistance: 260 C
• Dielectric Strength: 98,425,196.8503935 V/m