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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Diode Applications: Detector
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for applications through K band. The choice of barrier metal and process techniques results in a diode with a wide selection of video impedance ranges. The packaged
- Diode Type: Schottky Barrier Diodes
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SMS7630-061 is being discontinued and is not recommended for new designs. The suggested replacement are SMS7630-040LF, SMS7630-079LF The SMS7630-061 is a silicon, zero bias Schottky detector diode with an ultra-miniature 0201 footprint and very low barrier height.
- Diode Type: Schottky Barrier Diodes
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Supplier: Marktech Optoelectronics
Description: Marktech offers a broad line of silicon photo diodes in a variety of package types ranging from through-hole plastic and metal-can to surface mount. These devices are available with standard silicon die having a spectral sensitivity of approximately 400nm - 1100nm or with
- Active Area Diameter or Length: 1.21 mm
- Features: Other
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, VIDEO DETECTOR TYPE 1N32
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, S-BAND, VIDEO DETECTOR TYPE 1N32A
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, X-BAND VIDEO DETECTOR TYPE 1N31A
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Supplier: Infineon Technologies AG
Description: Silicon Schottky Diodes Summary of Features Low barrier diode for detectors up to GHz frequencies Pb-free (RoHS compliant) package Potential Applications Wireless Communications Satellite Receivers Base Stations High Speed Data Networks RFID
- VF: 0.4 to 1 volts
- IF: 20 mA
- VR: 40 volts
- Diode Applications: Detector, Mixer
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Supplier: Broadcom Inc.
Description: The HSCH-533x family of low barrier beam lead schottky diodes are ideally suited for mixer and detector applications from 1-26GHz.
- VF: 0.375 volts
- VR: 1 volts
- IR: 0.0004 mA
- Tj: -65 to 175 C
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks silicon Schottky diode chips are intended for use as detector and mixer devices in hybrid integrated circuits at frequencies from below 100 MHz to higher than 40 GHz. Skyworks 'Universal Chip' design features a 4 mil diameter bond pad that is offset from the
- Diode Applications: Mixer
- Diode Type: Schottky Barrier Diodes
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Supplier: Infineon Technologies AG
Description: Silicon Schottky Diodes Summary of Features Low barrier diode for detectors up to GHz frequencies Pb-free (RoHS compliant) package Potential Applications Wireless Communications Satellite Receivers Base Stations High Speed Data Networks RFID Applications Automotive
- VF: 0.5 volts
- IF: 20 mA
- VR: 40 volts
- Diode Applications: Detector, Mixer
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Supplier: Skyworks Solutions, Inc.
Description: These low-cost, surface mountable, plastic packaged silicon mixer Schottky diodes are designed for RF and microwave mixers and detectors. They include low barrier diodes and zero-bias detectors that combine Skyworks advanced semiconductor technology with low-cost
- Diode Applications: Mixer
- Diode Type: Schottky Barrier Diodes
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Supplier: First Sensor AG
Description: Alpha, beta, gamma, and X-ray radiation can be detected with silicon PIN photodiodes either directly via the absorption in the crystal lattice or indirectly via the measurement of the luminescence radiation of a scintillation crystal. The Series X from First Sensor features optimized
- Operating Temperature: 14 to 140 F
- Detector Style: Detector Sensing Element Only
- Types of Radiation Detectors: Semiconductor Diode Detector
- Types of Ionizing Radiation Detected: X-Ray
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Supplier: MOXTEK, Inc.
Description: The XPIN® detector is Moxtek’s best performing Si-PIN detector. XPIN detectors use a silicon PIN diode, multi-layer collimator, and thin DuraBeryllium® window, achieving great resolution and x-ray sensitivity. The XPIN preamp provides a low-noise signal output to
- Detector Style: Detector Sensing Element Only, Portable Detector
- Types of Ionizing Radiation Detected: X-Ray
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, VIDEO DETECTOR TYPES 1N358A, 1N358AR, 1N358AM, AND 1N358AMR
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Supplier: Richardson RFPD
Description: Zero Bias Silicon Schottky Barrier Detector Diodes
- Operating Frequency: 26,000 MHz
- Diode Type: RF Diodes, Schottky Barrier Diodes
- Features: Single
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Supplier: Marktech Optoelectronics
Description: Gas/flame detection, spectrometers and wearable devices. View Products Find something you were looking for? Get a free no-obligation quote today. Request Quote Related Resources Photo Detectors Avalanche Photo Diodes Silicon Photo Transistors InGaAs Photo Diodes Custom
- Peak Wavelength: 440 nm
- LED Type: Ultraviolet
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Supplier: Marktech Optoelectronics
Description: Photo Detectors Avalanche Photo Diodes Silicon Photo Transistors InGaAs Photo Diodes Custom Detectors Product Selector
- Active Area Diameter or Length: 0.30000000000000004 mm
- Photodiode Material: Indium Gallium Arsenide
- Features: Other
- Photodiode Type: PIN Photodiode
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Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly
- VF: 0.6 volts
- Diode Applications: Detector, Mixer, Modulation, Switching
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly
- VF: 0.4 volts
- Diode Applications: Detector, Mixer, Modulation, Switching
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly
- VF: 0.25 volts
- Diode Applications: Detector, Mixer, Modulation, Switching
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: Newport MKS
Description: batteries. It is equivalent to Coherent's Model ET-3500 (P/N 120-10058-0001). Silicon Free Space Optical Detectors The 818-BB-21 and -40 consist of free-space, small and large area Silicon detectors, with rise times ranging from 300 ps to 1.5 ns. Each unit, other than the
- Receiver Rise Time: 0.025 ns
- Bandwidth: 0 to 15,000 MHz
- Features: Other
- Receiver Type: PIN
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Supplier: Newport MKS
Description: Coherent's Model ET-4000 (P/N 120-10071-0001). Silicon Free Space Optical Detectors The 818-BB-21 and -40 consist of free-space, small and large area Silicon detectors, with rise times ranging from 300 ps to 1.5 ns. Each unit, other than the 818-BB-40, includes a built-in
- Receiver Rise Time: 0.03 ns
- Bandwidth: 0 to 12,500 MHz
- Features: Other
- Receiver Type: PIN
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Supplier: First Sensor AG
Description: Wavelength-sensitive photodiodes utilize the effect of the wavelength-specific absorption depth of radiation in silicon. For this purpose, two p-n junctions are aligned vertically in the silicon crystal, thus enabling separate signal detection within vertically adjacent ranges. Such a
- Spectral Response Range: 450 to 950 nm
- Rise Time: 10,000 ns
- Dark Current: 0.015 to 0.1 nA
- Features: Other
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Supplier: First Sensor AG
Description: These components utilize the effect of the lateral division of the generated photocurrent. The term "position sensitive detector" (PSD) refers to a component that is based on silicon PIN diode technology and is used to measure the position of the integral focus of an incoming
- Spectral Response Range: 700 to 1,000 nm
- Active Area Diameter or Length: 10.000000000000002 mm
- Rise Time: 4,000 ns
- Dark Current: 80 to 300 nA
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Supplier: Hamamatsu Photonics Europe
Description: High-speed detector with plastic package The S10783 is a high-speed APC (auto power control) detector developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. Features - High-speed response: 300 MHz typ. (λ=650 nm, VR=2.5 V), 250 MHz typ. (λ=780 nm,
- Sensitivity: 0.52 A/W
- Spectral Response Range: 330 to 1,040 nm
- Active Area Diameter or Length: 0.8000000000000002 mm
- Active Area Height: 0.8000000000000002 mm
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of photo detectors ranging from standard silicon photo diodes to InP Pin Photo Diodes. Our standard InP photo diodes have a spectral sensitivity range in the 400nm to 1000nm range for applications such as optical switching and
- Peak Wavelength: 880 nm
- Collector Dark Current: 100 nA
- Features: Dome Lens
- Phototransistor Type: Phototransistor
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Supplier: ValueTronics International, Inc.
Description: The 11722A is a used 2.6 GHz 1 Watt RF Sensor from Agilent. Electronic test equipment sensors measure the power of waveforms, such as multi-tone and modulated radiofrequency (RF) waveforms. Sensors gather highly accurate modulation measurements using diode detectors. Additional
- Frequency Range: 2,600 MHz
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Supplier: MACOM
Description: transformers and matched silicon Schottky diodes.
- RF Frequency Range: 0.05 to 46,000 MHz
- LO Frequency Range: 0.05 to 46,000 MHz
- IF Frequency Range: 0 to 8,000 MHz
- Mixer Type: Double Balanced Mixer
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Supplier: Allied Electronics, Inc.
Description: optically coupled to a monolithic silicon phototransistor detector.
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Supplier: Infineon Technologies AG
Description: Tuners, FM, and RF modems. Designers who used this product also designed with BAT15-02LRH | RF Mixer and Detector Schottky Diode TLE8250GVIO | Automotive CAN transceivers BSL202SN | Small signal/small power MOSFET BAT15-02LRH | RF Mixer and Detector Schottky Diode
- Features: Other
- Package Type: SOT23
- Packing Method: Tape Reel
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Supplier: Infineon Technologies AG
Description: MOSFET BAT63-02V | RF Mixer and Detector Schottky Diode IPT012N08N5 | N-Channel Power MOSFET BAT63-02V | RF Mixer and Detector Schottky Diode
- rDS(on): 0.06 ohms
- TJ: 175 C
- VGS(off): -4 to -2 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: RainWise, Inc.
Description: The RainWise Pyranometer is designed for measurements in solar, agricultural, meteorological and hydrological studies. The sensor features a PIN silicon photo diode mounted in a fully cosine corrected miniature head. Product Features The sensor output is integrated over the wavelength
- Operating Temperature: -85 to 176 F
- Measured Wavelength: 400 to 1,200 nm
- Accuracy: 3 (+/- %)
- Spectral Sensitivity: 0.5 (µV(or A)/Wm-2)
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Supplier: Light in Motion LLC
Description: Description The QCK6 product consists of a infrared light emitting diode coupled to an NPN silicon photodarlington packaged in a metal housing. The package is designed for surface mount applications where extreme temperatures are experienced during solder reflow. The gap between
- Operating Distance: 0.1574804 inch
- Operating Temperature: -40 to 212 F
- Features: DC Powered, Photoelectric Sensors
- Beam Type: Infrared
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Wolfspeed offers a family of 1200 V silicon carbide MOSFETs and Schottky diodes that are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high (read more)
Browse Diodes Datasheets for DigiKey -
value driver offers backward compatibility and a traditional voltage-controlled design paradigm, utilizing Skyworks' advanced, proprietary silicon isolation technology with support for 6 kVRMS for one minute isolation voltage. (read more)
Browse Power Diodes Datasheets for Skyworks Solutions, Inc. -
devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to (read more)
Browse Schottky Diodes Datasheets for Richardson RFPD -
Microsemi silicon carbide Schottky diode modules in stock at Richardson RFPD offer industry-leading integration and package. Shrink system size and weight, while reducing total system costs. Essentially zero forward and reverse recovery (read more)
Browse Diodes Datasheets for Richardson RFPD -
Littelfuse's SC1533-01FTG bidirectional TVS diodes are fabricated in a proprietary silicon avalanche technology. They provide a high electrostatic discharge (ESD) protection level for electronic equipment. The SC1533-01FTG TVS can safely absorb repetitive ESD strikes of (read more)
Browse Diodes Datasheets for DigiKey -
Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
Browse General Purpose Diodes Datasheets for DigiKey
Conduct Research Top
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Introduction to Silicon Photomultipliers (SiPMs)
The silicon photomultiplier (SiPM) is a radiation detector with extremely high sensitivity, high efficiency, and very low time jitter. It is based on reversed biased p/n diodes and can directly detect light from near ultra violet to near infrared.
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Bridging the Price/Performance Gap Between Silicon Drift and Silicon PIN Diode Detectors
Figures and graphs from Denver's X-Ray Conference 2009.
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Rapid Microbiological Methods for a New Generation
is a phenomenon in which the propagation of light is disturbed by its interaction with particles. In a Mie scattering particle detector, airborne particles intersect a light beam emanating from a laser diode. If the air is free of particles, a beam blocker at the center of the first convex lens
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Characterization Techniques for Miniature Low Power X-Ray Tubes
An X-ray shielded test chamber has been designed and built that includes a CCD-pinhole. camera and energy-dispersive silicon PIN-diode detector for spectrum collection. The. use of this chamber is an innovative approach that allows rapid imaging of the electron. beam spot on the anode, as well
More Information Top
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Direct actinide assay with surface passivated silicon
diodes
We have found that direct measurement of TRU is possible using surface passivated ion implanted planar silicon diode detectors .
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Characterizing the influence of detector density on dosimeter response in non-equilibrium small photon fields
… 54 2951–69 Dawson D J, Schroeder N J and Hoya J D 1986 Penumbral measurements in water for high-energy x rays Med. Phys. 13 101–4 Eklund K and Ahnesj¨o A 2010 Spectral perturbations from silicon diode detector encapsulation and shielding in …
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Measurements of output factors with different detector types and Monte Carlo calculations of stopping-power ratios for degraded electron beams
We therefore recommend that the readily available silicon diode detector should be used for output factor measurements in complex electron fields. .
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A silicon diode in a thimble-type mount for measurement of diagnostic X-ray spectra
The y ray spectrum of 241Amis measured with the silicon diode detector at room temperature and is shown in figure 2.
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Radiotherapy electron beams collimated by small tubular applicators: characterization by silicon and diamond diodes
The SCDD is based on a diamond Shottky diode, fabricated at Rome ‘Tor Vergata’ University laboratories and embedded in the same waterproof housing developed by PTW- Freiburg for the unshielded silicon diode detector 60017 (figure 2).
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Measurement of backscattered x-ray spectra at the water surface in the energy range 60 kV to 120 kV
Backscattered x-ray spectra at the water surface have been measured by using a small silicon diode detector .
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World Congress on Medical Physics and Biomedical Engineering, September 7 - 12, 2009, Munich, Germany
The CyberKnife system has generally been performed using a p-type silicon diode detector with a very small active volume.
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Semiconductor Radiation Detectors
… 3 Problem: Find the signal form generated by a photon creating an electron– hole pair at a distance x0 = d/2 from the highly p-doped entrance window of a 300 μm-thick n-type (ND = 1012 cm−3 ) silicon diode detector operated in .
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Handbook of Analytical Instruments, Second Edition > Colorimeters and Spectrophotometers (Visible–Ultraviolet)
Silicon Diode Detectors .
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COTS Silicon diodes as radiation detectors in proton and heavy charged particle radiotherapy 1
Still, com- mercial silicon diode detectors are widely used in nar- row-beam applications Westermark et al. (2000) for photon beams.