TABLE OF CONTENTS | Quantity | Unit | Explanation |
|---|---|---|
| ? | 1 | MOSFET velocity saturation index |
| ? | 1 | defect clustering factor |
| ? k | 1 | node activity |
| ? | 1 | BJT current gain |
| ? | A /V 2 | MOSFET gain factor |
| ? | A /V 2 | process gain factor |
| ? | 1 | cycles per data item |
| ? | 1 | duty cycle |
| ? 0 | A s/V m | permittivity of vacuum, also known as electric constant |
| ? r | 1 | relative permittivity, also known as dielectric constant |
| ? a, c, j | Kor C | temperature (of ambient air, case, and junction respectively) |
| ? | s ?1 | data throughput |
| ? | 1 | MOSFET channel length modulation factor |
| ? | m | pitch of virtual layout grid |
|
| m 2 /Vs | carrier mobility |
| 0 | V s/A m | permeability of vacuum, also known as magnetic constant |
| r | 1 | relative permeability |
| | kg /m 3 | density |
| ? | ? m | resistivity |
| ? k | 1 | crossover energy factor |
| ? | W /Hz = J | dissipated power per switching rate |
| A | m 2 | area or, as a generalization, circuit size in gate equivalents [GEs] |
| AT | m 2 s | size time product, alternatively in [GEs] |
| B | 1 | base in a positional number system |
| c | USD | cost, occasionally in... |
