Electronic and Optoelectronic Properties of Semiconductor Structures

Appendix D: Important Properties of Semiconductors

The data and plots shown in this Appendix are extracted from a number of sources. A list of useful sources is given below. Note that impact ionization coefficient and Auger coefficients of many materials are not known exactly.

S. Adachi, J. Appl. Phys., 58, R1 ( 1985).

H.C. Casey, Jr. and M.B. Panish, Heterostructure Lasers, Part A, "Fundamental Principles;" Part B, "Materials and Operating Characteristics," Academic Press, N.Y. ( 1978).

Landolt-Bornstein, Numerical Data and Functional Relationship in Science and Technology, Vol. 22, Eds. O. Madelung, M. Schulz, and H. Weiss, Springer-Verlog, N.Y. ( 1987). Other volumes in this series are also very useful.

S.M. Sze, Physics of Semiconductor Devices, Wiley, N.Y. ( 1981). This is an excellent source of a variety of useful information on semiconductors.

"World Wide Web;" A huge collection of data can be found on the Web. Several professors and industrial scientists have placed very useful information on their websites.


Figure D.1: Lattice constants and bandgaps of semiconductors at room temperature.

Figure D.2: Lattice constants of several alloy systems.
Table D.1: Energy gaps of some semiconductors along with their temperature dependence.

Semi- conductor

Type of Energy Gap

Experimental Energy Gap E g (eV)

Temperature Dependence of Energy Gap (eV)

0 K

300 K

AlAs

Indirect

2.239

2.163

2.239 - 6.0 10 -4 T 2/(T + 408)

GaP

Indirect

2.338

2.261

2.338 - 5.771 10 -4 T 2/(T + 372)

GaAs

Direct

1.519

1.424

1.519...

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