Electronic and Optoelectronic Properties of Semiconductor Structures

The data and plots shown in this Appendix are extracted from a number of sources. A list of useful sources is given below. Note that impact ionization coefficient and Auger coefficients of many materials are not known exactly.
S. Adachi, J. Appl. Phys., 58, R1 ( 1985).
H.C. Casey, Jr. and M.B. Panish, Heterostructure Lasers, Part A, "Fundamental Principles;" Part B, "Materials and Operating Characteristics," Academic Press, N.Y. ( 1978).
Landolt-Bornstein, Numerical Data and Functional Relationship in Science and Technology, Vol. 22, Eds. O. Madelung, M. Schulz, and H. Weiss, Springer-Verlog, N.Y. ( 1987). Other volumes in this series are also very useful.
S.M. Sze, Physics of Semiconductor Devices, Wiley, N.Y. ( 1981). This is an excellent source of a variety of useful information on semiconductors.
"World Wide Web;" A huge collection of data can be found on the Web. Several professors and industrial scientists have placed very useful information on their websites.
| Semi- conductor | Type of Energy Gap | Experimental Energy Gap E g (eV) | Temperature Dependence of Energy Gap (eV) | |
|---|---|---|---|---|
| 0 K | 300 K | |||
| AlAs | Indirect | 2.239 | 2.163 | 2.239 - 6.0 10 -4 T 2/(T + 408) |
| GaP | Indirect | 2.338 | 2.261 | 2.338 - 5.771 10 -4 T 2/(T + 372) |
| GaAs | Direct | 1.519 | 1.424 | 1.519... |