TABLE OF CONTENTS The various implants are typically serviced by distinct types of tools, each engineered to provide a solution for a specific segment of the implant application space. Traditionally, these segments have been called high current, medium current, and high energy, and can be characterized mainly by the dose and the energy of implanted ions.
High current implantation typically refers to doses in the 10 13 10 16 cm -2 range at energies no higher than about 180 keV but as low as 0.2 keV. The most common applications for which high current implanters are used include: source/drain contact and extension junction formation (both preamorphization and doping); gate electrode doping (currently polysilicon but metal in the future); and SOI substrate manufacturing.
Medium current implantation typically refers to doses in the 10 11 10 14 cm -2 range at maximum energies of several hundred keV and as low as 3 keV. The most common applications for which medium current implanters are used include: threshold voltage adjustment; halo or pocket implants; field isolation and channel engineering.
High energy implantation typically refers to doses in the 10 11 10 13 cm -2 at energies up to several MeV. The most common applications for which high energy implanters are used include retrograde and triple well formation, buried layer formation, and field isolation.
It should be noted that there is substantial applications overlap among the implantation segments. For example, medium current systems can...
