Mosfet Modeling for Circuit Analysis and Design

[1] Richard B. Adler, Arthur C. Smith, and Richard L. Longini, Introduction to Semiconductor Physics , SEEC Series, vol. 1, John Wiley & Sons, New York, 1964.
[2] Chih-Tang Sah, Fundamentals of Solid-State Electronics, World Scientific, Singapore, 1991.
[3] W. L. Brown, n-type surface conductivity on p-type Ge, Phys. Rev., vol. 91, no. 3, pp. 518-527, 1953.
[4] C. G. B. Garrett and W. H. Brattain, Physical theory of semiconductor surfaces, Phys. Rev., vol. 99, no. 2, pp. 376-387, 1955.
[5] Richard S. C. Cobbold, Theory and Applications of Field-Effect Transistors, Wiley-Interscience, New-York, 1970.
[6] G. C. Dousmanis and R. C. Duncan, Jr., Calculation on the shape and extent of space charge regions in semiconductor surfaces, J. Appl. Phys., vol. 29, no. 12, pp. 1627-1629, Dec. 1958.
[7] S. M. Sze, Physics of Semiconductor Devices, Wiley-Interscience, New York, 1969.
[8] A. S. Grove, Physics and Technology of Semiconductor Devices, John Wiley & Sons, New York, 1967.
[9] Dawon Kahng, A historical perspective on the development of MOS transistors and related devices, IEEE Trans. Electron Devices, vol. 23, no. 7, pp. 655-657, July 1976.
[10] Robert F. Pierret, Field Effect Devices, 2 nd ed., Addison-Wesley, Reading, Mass., 1990.
[11] Alexandre Ternes Behr, M rcio Cherem Schneider, Sidnei Noceti Filho, and Carlos Galup Montoro, Harmonic distortion caused by capacitors implemented with MOSFET gates, IEEE J. Solid-State Circuits, vol. 27, no. 10, pp. 1470-1475, Oct. 1992.
[12] Yuan Taur and Tak...