TABLE OF CONTENTS MOSFET parameters are fundamental for the correct analysis, design, and simulation of MOS circuits. The accuracy of the transistor characteristics depends not only on a good device model but also on the accuracy of fundamental parameters. This chapter describes some procedures to extract fundamental parameters of MOSFET models.
The consistent and accurate determination of model parameters plays an important role in device design, process control, and technology characterization [1] . Also, the transistor model and the associated set of model parameters are of utmost relevance for interfacing integrated circuit designers and silicon foundries. The accuracy of the device characteristics and, as a consequence, the prediction of the performance of a circuit depends not only on the device model but also on the parameter values being used [2], [3] . Hence, the procedures employed to extract the device model parameters are of prime importance.
Determining the values for the full set of parameters of a MOSFET model is not a simple task. As pointed out in [2] and [3] , difficulties in determining the values for the model parameters arise because: (i) the approximations employed to derive the device model are, in some cases, far from reality; (ii) the accurate determination of a given parameter sometimes depends on the value of another parameter or parameters which is or are not accurately known. The extraction of a full set of transistor parameters, a must in a production environment, generally involves some kind of optimization, which is, however, beyond the...
