Products & Services
See also: Categories | Featured Products | Technical Articles | More Information-
Supplier: Infineon Technologies AG
Description: NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb
- Package Type: SOT23, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: Infineon Technologies AG
Description: PNP Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN26 (NPN) Pb
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: Infineon Technologies AG
Description: NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb
- Package Type: SOT23, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
-
-
Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT NPN High Volt Power
- Polarity: NPN, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
-
Supplier: Richardson RFPD
Description: The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
-
Supplier: Infineon Technologies AG
Description: PNP Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA42 / MMBT42
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: Richardson RFPD
Description: The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
-
Supplier: Richardson RFPD
Description: The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
-
Supplier: Richardson RFPD
Description: RF Power Vertical Mosfet. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness.
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
-
Supplier: Allied Electronics, Inc.
Description: Silicon Power Transistor High Power Audio Amplifiers
- Package Type: TO-3
- Polarity: NPN
- Transistor Type: General Purpose BJT
-
Supplier: Allied Electronics, Inc.
Description: Silicon PNP Power Transistors
- Package Type: TO-3
- Polarity: PNP
- Transistor Type: General Purpose BJT
-
Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60415PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
-
Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
-
Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60610PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
-
Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
-
Supplier: Solid State Devices, Inc.
Description: reputation has been built upon our unsurpassed technology and quality in the areas of high density/high power and high voltage discrete semiconductors and modules.
- Package Type: Other
- Polarity: PNP
-
Supplier: Twilight Technology Inc.
Description: Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging
- Transistor Type: Power BJT Transistors
-
Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: TO-251 / TO-252, Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
-
Supplier: MACOM
Description: MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors, Silicon controlled rectifiers,
- Package Type: TO-3, TO-39, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Other
- Transistor Type: Power BJT Transistors
-
Supplier: RFMW
Description: Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. Features and benefits High power
-
Supplier: MACOM
Description: At MACOM we offer a broad range of TMOS and DMOS RF power MOSFET transistor products as discrete devices from DC to 1.0 GHz. Our high power MOSFET transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical
- Operating Frequency: 5 to 1000 MHz
- Output Power: 2 to 600 watts
- Package Type: Other
- Power Gain: 8 to 21 dB
-
Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Darlington
-
Supplier: Allied Electronics, Inc.
Description: High Power IGBT Driver PCB
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
- Transistor Type: Bipolar RF Transistors
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: NPN
- Transistor Type: General Purpose BJT
-
Supplier: Northrop Grumman Corporation
Description: systems. Low thermal resistance and high efficiency couple to provide nearly imperceptible droop across the entire TDMA burst waveform at power levels of over 200 watts. WPTB64A1011Ax Class C 1030/1090 MHz Bipolar RF Transistor The WPTB64A1011Ax is an application specific
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
-
Supplier: Integra Technologies, Inc.
Description: Available in a bolt down flanged version as IGN2729M500 or in a solder mount earless version IGN2729M500S. IGN2729M500 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
-
Supplier: JC Cherry, Inc.
Description: Power Transistor Test Sockets PC Board Mounting Tape Low-Inductance High Current High Voltage High Temperature ?The signal are improved by wide drain and source (Collector and Emitter) and low inductance of the transistor electrode. ●Power
- Contact Resistance: 50 milliohms
- Insulation Resistance: 500 Mohms
- Operating Temperature: -55 to 220 C
- Package Type: Test / Prototyping Socket
-
Supplier: JC Cherry, Inc.
Description: Power Transistor Test Sockets Combination Bus Bar Tape Low-Inductance High Current High Voltage High Temperature ?The signal are improved by wide drain and source (Collector and Emitter) and low inductance of the transistor electrode. ●Power
- Contact Resistance: 50 milliohms
- Insulation Resistance: 500 Mohms
- Operating Temperature: -55 to 220 C
- Package Type: Test / Prototyping Socket
-
Supplier: Rochester Electronics
Description: RF Power Bipolar Transistor, Very High Frequency Band, NPN
- Polarity: NPN
- Transistor Type: Power BJT Transistors, Bipolar RF Transistors, Power MOSFET
-
Supplier: Comdel, Inc.
Description: maintenance Class “C” linear design assures stability ETL Marked and SEMI F47 compliant Control circuitry ensures consistency during high VSWR conditions Output transistors are beta-matched to assure reliability Broadband, low “Q” circuits inhibit “squeeging” and self-resonant
- AC Input Voltage: 208 volts
- DC Output Power: 1000 watts
- Features: Adjustable Frequency, Pure Sine Output
- Form Factor: Rack Mount
-
Supplier: Texas Instruments
Description: 30V N-Channel High Side NexFET Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: Power MOSFET
-
Supplier: Linear Systems
Description: The LS301 Series High Voltage, Super Beta, Monolithic Dual, NPN Transistor is a direct replacement for Micro Power Systems MP301, MP302, MP303 Series. It is ideal for Small Signal Transistors, Super Beta, Amplifier & Switching Applications. Available in PDIP 8L ROHS,
- Package Type: Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
-
Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our high power bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial,
- Operating Frequency: 1 to 3500 MHz
- Output Power: 0.7000 to 1000 watts
- Package Type: Other
- Polarity: NPN
-
Supplier: Maxim Integrated
Description: The MAX1822 high-side supply, using a regulated charge pump, generates a regulated output voltage 11V greater than the input supply voltage to power high-side switching and control circuits. The MAX1822 allows low-resistance N-channel MOSFETs (FETs) to be used in circuits that
- Device Type / Applications: Other
- IC Package Type: SOIC, PDIP, Other
- Pin Count: 8 #
- RoHS Compliant: Yes
Find Suppliers by Category Top
Featured Products Top
-
In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
power bipolar transistors we provide designers with additional voltage-current options in a robust DPAK package. Therefore, our customers can benefit from the renowned quality and performance offered by Nexperia as a high-performance supplier.” For more information, including product specs and datasheets, visit: www.nexperia.com/products/MJD (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
transistor stands out in the world of integrated circuits. Key Features: Versatile Polarity: NPN configuration for flexibility in circuit design. Powerful Output: IC(max) of 200mA ensures robust functionality. High (read more)
Browse Bipolar RF Transistors Datasheets for Acme Chip Technology Co., Limited -
ON Semiconductor Catalog Transistors - FETs, MOSFETs - RF Description MOSFET N-CH 60V 0.115A SOT (read more)
Browse Transistors Datasheets for Win Source Electronics -
levels, providing flexibility in circuit design and application. Impressive Frequency Response: With an fT of 120 MHz, this transistor enables fast switching and amplification, making it ideal for high-frequency RF applications. Robust Power Dissipation: The (read more)
Browse Bipolar RF Transistors Datasheets for Acme Chip Technology Co., Limited -
. Key Features: High fT: Boasting a frequency transition (fT) of 450 MHz, this transistor is ideal for RF applications requiring rapid signal processing. Powerful hfe: With a high current gain (hfe) of 300, it provides excellent signal amplification (read more)
Browse Bipolar RF Transistors Datasheets for Shenzhen Shengyu Electronics Technology Limited -
the Si alternative. Higher efficiency of SiC MOSFETs over Si IGBTs Prior generations of three-phase system-based power products utilized Si-insulated gate bipolar transistors (IGBTs). IGBTs have the capacity to support 1200 V and supply high current. However, IGBT (read more)
Browse Power Supplies Datasheets for EA Elektro-Automatik Inc. -
inductor, and a controller, with only minimal external components needed for configuration and loop compensation. The devices’ compact size dramatically increases power density, while their high level of integration reduces design complexity and time to market. The regulators’ controllers (read more)
Browse IC Power Supplies Datasheets for New Yorker Electronics Co., Inc. -
The Yaskawa GA800 drive provides the ultimate combination of power, ease of use, flexibility, and performance. Designed to control traditional and emerging motor technologies through 600 HP, the GA800 handles applications ranging from simple fans and pumps to high-performance test dynamometers (read more)
Browse AC Motor Drives Datasheets for Yaskawa America, Inc. - Drives Division -
, synchronous buck converters, DC/DC converters, switch tank topologies, OR-ring FETs, and load switches for power supplies in servers and telecom and RF equipment. By delivering high performance in isolated and non-isolated topologies, the MOSFET simplifies part selection for designers working with both. The (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for New Yorker Electronics Co., Inc.
Conduct Research Top
-
AN721: Impedance Matching Networks Applied to RF Power Transistors, Courtesy of Motorola
Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer to high frequency power amplifiers. Although matching networks normally take the form of filters and therefore are also useful to provide frequency discrimination, this aspect will only
-
Considerations for Driving Power MOSFETs in High-Current, Switch Mode Regulators
The low on-resistance and high current carrying capability of power MOSFETs make them preferred switching devices in SMPS power supply design. However, designing with these devices is not as straightforward as with their bipolar counterparts. Unlike bipolar transistors, power MOSFETs have
-
Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
-
The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors
SiC based systems have the revolutionary capability which can be characterized by a steep change in performance which can make them attractive for designers targeting innovative and disruptive solutions.
-
RF Power: GaN Moves In for the Kill
papers, analyst reports, and corporate brochures. After all, GaN has at least ten times the power density per millimeter of transistor gate periphery, higher operating voltages (reducing impedance transformation issues), higher efficiency, and the ability to combine high RF power output over broad
-
The `Good Old` Power Days (.pdf)
of high-voltage power transformers could put you to sleep. If a current needed "tweaking" you looked at a 3-inch panel meter, and took control with a knob you could get your whole fist around!. Power resistors were big wirewound guys. They had hollow cores and were covered with shiny brown enamel
-
Soft-Start Controller For Switching Power Supplies
driven by the power supply is capacitive, the problem is exaggerated due to the large transient currents required to charge the capacitive load. In extreme instances, the repeated high stress of start-up can result in catastrophic failures in the driver section, typically, the power MOSFET transistors
-
Designing Power Supplies for Global Applications (.pdf)
transistors-the two-transistor forward converter-can be used to provide low-cost, steady output voltages even when operating over a wide range of input voltages. (PWM) to provide high conversion efficiency. Such supplies are generally limited by the minimum pulse widths possible when using commercial PWM
More Information Top
Indicates content that may require registration and/or purchase.
-
Electronics for engineers and natural scientists
Are possible at single high current transistors in the s-Bereich up to 1000A without damage.
-
Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping
Therefore, to verify the hypothesis regarding the prospects of the donor acceptor doping of hetero structures for high power transistors , at the Rzhanov Institute of Semiconductor Physics experimental AlGaAs–InGaAs–GaAs heterostructures were grown by molecular beam epitaxy on a Compact 21 facility (Riber …
-
http://www.nxp.com/documents/selection_guide/75016687.pdf
Gen 6 RF high power transistor for avionics applications .
-
Performance evaluation of SRAM cells in 22nm predictive CMOS technology
The read times for the low power transistor SRAM cells are generally twice as long as the read times for the cells implemented with the high power transistors .
-
Thermal Analysis of S Band Transmit Module with Air-Cooling System
This is possible due to rapid development of high power transistor technology, which allows obtaining products with high output power, high efficiency and reliability.
-
Radar Handbook, Third Edition > Chapter 11 Solid-State Transmitters
By using a push-pull configuration, the circuit designers alleviated some of the low impedance-matching problems normally associated with very high power transistors .
-
Load-Pull Techniques with Applications to Power Amplifier Design
Z. Aboush, J. Lees, J. Benedikt, P. Tasker, Active harmonic load-pull system for characterizing highly mismatched high power transistors , in IEEE Microwave Theory and Techniques Soci- ety’s International Microwave Symposium Digest, Long Beach, USA (June 2005), pp. 1311– 1314 77.
-
A thru-reflect-line calibration for measuring the characteristics of high power LDMOS transistors
Proc IRE, 1956, 44(1): 31 [9] Shih C. Advanced TRL (through-reflect-line) fixture design and error analyses for RF high power transistor characterization and automatic load pull measurement.