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Supplier: ODG (Origin Data Global)
Description: 512Kbit DIP-8 EEPROM ROHS
- Memory Category: EEPROM
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Supplier: Quarktwin Technology Ltd.
Description: EEPROM Memory IC 512Kbit I²C 400 kHz 900 ns Die
- Density: 512 kbits
- Access Time: 900 ns
- Operating Temperature: 0 to 70 C
- Memory Category: EEPROM
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Supplier: DigiKey
Description: SRAM Memory IC 16Mb (512K x 32) Parallel 20ns 76-CFP (45.72x51.31)
- Density: 16,000 kbits
- Operating Temperature: -55 to 125 C
- Features: Other
- Memory Category: SRAM
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 512MB. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 512MB, Memory IC and Storage Component, Memory Cards. This
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 130076-M27W512-100K6 Packaging: Tube/Rail Mounting: SMD (SMT) Technology: EPROM - OTP Memory Size: 512Kb (64K x 8) Access Time: 100ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 85°C
- Access Time: 100 ns
- Operating Temperature: -40 to 85 C
- Memory Category: EPROM
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 512GB. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 512GB, Memory IC and Storage Component,
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Supplier: Lingto Electronic Limited
Description: IC EEPROM 512KBIT I2C 400KHZ DIE
- Density: 512 kbits
- Access Time: 900 ns
- Memory Category: EEPROM
- Features: I2C, Other
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Supplier: Win Source Electronics
Description: Win Source Part Number: 956738-K512H1GACC-A075 Series: * Categories: Memory
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Supplier: Micross Components, Inc.
Description: Memory Products Offered: MRAM SRAM nvSRAM VRAM SDRAM UVEPROM DRAM EEPROM FRAM Flash
- Density: 4,096 kbits
- Operating Temperature: -55 to 125 C
- Supply Voltage: 3.3 V
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 072807-M27W512-100K6TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: EPROM - OTP Memory Size: 512Kb (64K x 8) Access Time: 100ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: -40°C to 85°C
- Access Time: 100 ns
- Operating Temperature: -40 to 85 C
- Memory Category: EPROM
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1104581-WE-512K8-150CC Packaging: Bulk Mounting: SMD (SMT) Operating Supply Voltage: 5 V Categories: EEPROM Case / Package: CDIP Alternative Parts (Cross-Reference):
- Operating Temperature: 0 C
- Package Type: DIP
- Memory Category: EEPROM
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 512GB, 6Gb. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 512GB, 6Gb, Memory IC and Storage Component, SSDs,
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Description: IC EPROM 512KBIT PARALLEL 32PLCC
- Density: 512 kbits
- Cycle Time: 100 ns
- Memory Category: EPROM
- Features: Other, Parallel
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Supplier: Infineon Technologies AG
Description: Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL512SAGBHEC10
- Density: 512,000 kbits
- Operating Temperature: -55 to 125 C
- Supply Voltage: 2.7 V, 3 V, 3.6 V
- Features: Other
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Supplier: Infineon Technologies AG
Description: Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL512SAGBHEC13
- Density: 512,000 kbits
- Operating Temperature: -55 to 125 C
- Supply Voltage: 2.7 V, 3 V, 3.6 V
- Features: Other
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Supplier: Acme Chip Technology Co., Limited
Description: MEMORY
- Density: 8,000 kbits
- Cycle Time: 70 ns
- Features: Other
- Memory Category: SRAM
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Supplier: Infineon Technologies AG
Description: Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL512SAGBHEA13
- Density: 512,000 kbits
- Operating Temperature: -55 to 125 C
- Supply Voltage: 2.7 V, 3 V, 3.6 V
- Features: Other
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Supplier: Infineon Technologies AG
Description: Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL512SAGBAEA13
- Density: 512,000 kbits
- Operating Temperature: -55 to 125 C
- Supply Voltage: 2.7 V, 3 V, 3.6 V
- Features: Other
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Description: IC EEPROM 512KBIT SPI 20MHZ DIE
- Density: 512 kbits
- Data Rate: 20 MHz
- Operating Temperature: -40 to 85 C
- Memory Category: EEPROM
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Supplier: Newark, An Avnet Company
Description: SERIAL EEPROM, 512KBIT, 400KHZ, SOIJ-8; Memory Interface Type:Serial I2C (2-Wire); Memory Size:512Kbit; EEPROM Memory Configuration:64K x 8bit; Clock Frequency:400kHz; Memory Case Style:SOIJ; No. of Pins:8Pins; MSL:MSL 1 - Unlimited RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: SERIAL EEPROM, 512KBIT, 1MHZ, SOIC-8; Memory Interface Type:Serial I2C (2-Wire); Memory Size:512Kbit; EEPROM Memory Configuration:64K x 8bit; Clock Frequency:400kHz; Memory Case Style:SOIC; No. of Pins:8Pins; Supply Voltage Min:2.5V RoHS Compliant: Yes
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 2.7V~3.6V 50MHz 512Mbit LGA-8(6x8) NAND FLASH ROHS
- Density: 512,000 kbits
- Standby Current: 0.183 mA
- Operating Temperature: -25 to 85 C
- Memory Category: Flash
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Supplier: Newark, An Avnet Company
Description: FPGA CONFIGURABLE MEMORY 512KBIT 8-LAP; Memory Type:EEPROM; Memory Size:512Kbit; Clock Frequency:33MHz; IC Interface Type:2 Wire; Memory Case Style:LAP; No. of Pins:8Pins; Supply Voltage Min:3V; Supply Voltage Max:5.5V; MSL:- RoHS Compliant: Yes
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 512Kbit I2C SOIJ-8-208mil EEPROM ROHS
- Density: 512 kbits
- Operating Temperature: -40 to 85 C
- Memory Category: EEPROM
- Features: I2C, Other
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Supplier: TT Semiconductor, Inc.
Description: TT Semiconductor is the leading manufacturer of electronic components designed to survive under extreme temperature ranges and harsh environmental conditions. The current standard product offering is focused on high performance analog and memory devices. TT Semiconductor is a newly formed
- Density: 512,000 kbits
- Operating Temperature: -55 to 200 C
- Package Type: DIP, SOIC
- Memory Category: Flash
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Supplier: TT Semiconductor, Inc.
Description: TT Memories is a division of Twilight Technology formed to support the memory marketplace from legacy technologies to state-of-the-art technologies. TT Memories manufactures devices and modules for the Commercial, Industrial, Aerospace, and Defense marketplaces. TT Memories also designs and
- Density: 16,000 kbits
- Operating Temperature: -55 to 125 C
- Supply Voltage: 5 V
- Memory Category: Flash
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Supplier: Accuris
Description: MICROCIRCUIT, MEMORY, DIGITAL, CMOS/SOI, 512K X 32-BIT (16M), RADIATION-HARDENED, LOW VOLTAGE SRAM, MULTI-CHIP MODULE
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Supplier: Utmel Electronic Limited
Description: MICROCHIP - SST25VF512A-33-4C-SAE - FLASH MEMORY, 512 KBIT, 33 MHZ, 8-SOIC
- Density: 4,096 kbits
- Operating Current: 10 mA
- Standby Current: 0.015 mA
- Access Time: 12 ns
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Supplier: Allied Electronics, Inc.
Description: EPROM OTP 512K PLCC32
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Supplier: Utmel Electronic Limited
Description: IC SRAM 512K SPI 20MHZ 8SOIC
- Density: 4,096 kbits
- Operating Current: 10 mA
- Standby Current: 0.004 mA
- Access Time: 25 ns
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Supplier: Utmel Electronic Limited
Description: IC EPROM 512K PARALLEL 32PLCC
- Access Time: 120 ns
- Operating Temperature: -40 to 85 C
- Memory Category: EPROM
- Features: Other
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Supplier: Allied Electronics, Inc.
Description: EPROM, 512K 70NS OTP 32PLCC
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Supplier: Utmel Electronic Limited
Description: EPROM OTP 512K-Bit 64K x 8 100ns 32-Pin PLCC
- Density: 4,096 kbits
- Operating Current: 50 mA
- Standby Current: 0.1 mA
- Access Time: 100 ns
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Supplier: Texas Instruments
Description: 16MB Radiation-Hardened SRAM 76-CFP -55 to 125
- Density: 16,000 kbits
- Access Time: 20 ns
- Supply Voltage: 1.8 V, 3.3 V
- Memory Category: SRAM
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Supplier: Texas Instruments
Description: 512 x 18 asynchronous FIFO memory 56-SSOP 0 to 70
- Memory Category: FIFO
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The MT53D512M32D2DS-053 WT:D is a 16Gb (2GB) LPDDR4 memory device designed for next-generation high-performance, power-sensitive applications. Featuring dual-channel architecture (x32 bus width) and data rates up to 4266 Mbps, it ensures efficient real (read more)
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End™, and Application Specific Power Drivers™ to form the most compact microcontroller-based power and general purpose application systems. The product's microcontroller features up to 128kB of embedded FLASH and 32kB of SRAM memory, a high-speed 12-bit 2.5MSPS analog-to-digital converter (read more)
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Falcon Flex-a new F-16 business practice
It was less expensive to use readily available 1,024K memory chips than the older technology, more costly 512K memory chips .
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Software-implemented EDAC protection against SEUs
This section analyzes several possible implementations of a 512K 8 memory chip .
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A single transistor EEPROM cell and its implementation in a 512K CMOS EEPROM
This paper describesan electrically programma- ble and erasablenonvolatile memory cell employ- ing a single floating gate transistor(l), and its implementationin a 512K CMOS EEPROM memory chip .
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Reconfigurable molecular dynamics simulator
Three ad- ditional 512K ×32 memory chips would be needed for the LJFC lookup table for each pipeline and the remaining mem- ory would be internal to the FPGAs.
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G5 harddisks and PCI-X - MacRumors Forums
The thing that coul really boost speeds in Gobi is the increase of the L2 cache which will provide 512K more memory for the chip to access at the processor clock rate.
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CR4 - Thread: Laptop Sreensaver Problem
I've turned off a lot of bells and whistles on my Toshiba Satellite w/Vista snf 2Meg memory / Intel Centrino Duo to speed it up to match my XP desktop with 512K memory and a Pentium chip .
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Variation-aware and adaptive-latency accesses for reliable low voltage caches
In this paper, our experiment data and observation is obtained by the measurement of a ULV 512K -bit embedded memory chip [9].
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An FPGA-based implementation of AMB controller for MSFW
An ESA Leon2 memory controller is attached to LEON3 processor through AMBA AHB bus, which manage two chip of 1M×16bit Flash memory and two chip of 512K ×16bit SRAM.
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EUROPRACTICE-MCM: a European initiative to create an MCM infrastructure and to stimulate commercial MCM take-up
The memory is assembled as six 512K chips on the MCM-L substrate.
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New Products
It requires 512K memory and an 8087 coprocessor chip (80287 on the AT).