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Supplier: Littelfuse, Inc.
Description: Depletion Mode MOSFET DevicesOur N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process
- Polarity: N-Channel
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Supplier: Infineon Technologies AG
Description: regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel. Summary of Features Depletion mode dv/dt rated Available with V GS(th) indicator on the reel Halogen free;
- VGS(off): -2.1 to -1 volts
- rDS(on): 6 ohms
- TJ: -55 to 150 C
- MOSFET Operating Mode: Depletion
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Supplier: Microchip Technology, Inc.
Description: The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp
- Polarity: N-Channel
- Package Type: SOT23, SOT89, TO-92
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Supplier: Microchip Technology, Inc.
Description: This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input
- Polarity: N-Channel
- Package Type: SOT89
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Supplier: Microchip Technology, Inc.
Description: The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high
- VGS(off): 0.8 to -3 volts
- rDS(on): 1.4 ohms
- Features: MOSFET
- Polarity: N-Channel
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Supplier: Newark, An Avnet Company
Description: DEPLETION MODE MOSFET, 240V, 120mA, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:240V; Continuous Drain Current Id:120mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.7W RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CHANNEL DEPLETION MODE
- rDS(on): 3.5 ohms
- TJ: -55 to 150 C
- Number of Transistors in the Chip: 1
- Features: MOSFET, Other
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
- V(BR)DSS: 10 volts
- IDSS: 3 milliamps
- rDS(on): 75 ohms
- TJ: 0 to 70 C
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Supplier: Utmel Electronic Limited
Description: MOSFET D2 Depletion Mode Power MOSFETs
- rDS(on): 0.064 ohms
- QG: 224.99999999999997 nC
- PD: 830,000 milliwatts
- TJ: -55 to 175 C
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON TYPES 213821 , 213822, 2N3823 JANTX, JANTXV, AND JANS
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Supplier: Accuris
Description: TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, AND 2N3823, JAN, JANTX, JANTXV, AND JANS
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, 2N3823, JANTX, JANTXV AND JANS
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Supplier: Littelfuse, Inc.
Description: Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting, solid state relays,
- Polarity: N-Channel
- Features: Other
- Package Type: TO-247
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, 2N3823, JAN, JANTX, JANTXV, AND JANS
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Supplier: Littelfuse, Inc.
Description: As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation
- Polarity: N-Channel
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: MOSFETs N-Ch Depletion Mode Vertical DMOS FET Product overview: CPC3980ZTR from IXYS Integrated Circuits is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers
- PD: 1.8 milliwatts
- MOSFET Operating Mode: Depletion
- Features: MOSFET, Other
- Polarity: N-Channel
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Supplier: Win Source Electronics
Description: Manufacturer: IXYS Win Source Part Number: 013258-CPC5602CTR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On):
- V(BR)DSS: 350 volts
- PD: 2,500 milliwatts
- TJ: -40 to 85 C
- MOSFET Operating Mode: Depletion
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Supplier: Win Source Electronics
Description: Manufacturer: IXYS Win Source Part Number: 1030007-CPC5603CTR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On):
- V(BR)DSS: 415 volts
- PD: 2,500 milliwatts
- TJ: -40 to 85 C
- MOSFET Operating Mode: Depletion
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Supplier: Win Source Electronics
Description: Manufacturer: IXYS Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs Series: Depletion Package: Tape & Reel (TR) /Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature: -55°C
- MOSFET Operating Mode: Depletion
- Features: MOSFET
- Package Type: SOT3, TO-251 / TO-252
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 28V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 28V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery
- V(BR)DSS: 80 volts
- gfs: 0.005 kS
- PD: 300,000 milliwatts
- TJ: -65 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 33V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 33V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports
- V(BR)DSS: 33 volts
- PD: 1,500 milliwatts
- TJ: -40 C
- MOSFET Operating Mode: Depletion
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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 8us/1%/50V; (PAVG = 5W) ■ 2.998GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed
- Power Gain: 12 dB
- Operating Frequency: 2,998 MHz
- Output Power: 500 watts
- Features: Bipolar RF Transistors, Other
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Supplier: Win Source Electronics
Description: Manufacturer: IXYS Win Source Part Number: 1191271-IXTP02N50D Manufacturer Homepage: www.ixys.com Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
- MOSFET Operating Mode: Depletion
- Features: MOSFET
- Package Type: SOT3
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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT = 300W CW @ 36V ■ 960-1250 Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed
- Power Gain: 13.5 dB
- Output Power: 300 watts
- Operating Frequency: 960 to 1,215 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
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Supplier: RS Components, Ltd.
Description: MOSFET, DEPLETION-MODE, 400V, 25 Ohm
- MOSFET Operating Mode: Depletion
- Features: MOSFET, Other
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Description: Gives standards for the following categories of field-effect transistors : -Type A: junction-gate type; -Type B: insulated-gate depletion type; -Type C: insulated-gate enhancement type.
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Description: Gives standards for the following categories of field-effect transistors : -Type A: junction-gate type; -Type B: insulated-gate depletion type; -Type C: insulated-gate enhancement type.
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Supplier: Rochester Electronics
Description: 60V-600V N-Channel Depletion Mode MOSFET
- MOSFET Operating Mode: Depletion
- Features: MOSFET, Other
- Polarity: N-Channel
- Packing Method: Tape Reel
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Supplier: Richardson RFPD
Description: TA9210D-EVB-D is a test fixture for TA9210D , a depletion mode GaN HEMT, optimized for 30-1000MHz.
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65050-372LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain, and excellent
- Frequency Range: 450 to 6,000 MHz
- Minimum Gain: 15.5 dB
- Maximum Gain: 15.5 dB
- Noise Figure: 0.65 dB
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Supplier: Utmel Electronic Limited
Description: DUAL N CH RF MOSFET, 12V, 30MA, 4-SOT-143R - More Details
- V(BR)DSS: 12 volts
- PD: 200 milliwatts
- Number of Transistors in the Chip: 1
- Noise Figure: 0.6 dB
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET DepletionMode MOSFET
- Features: MOSFET
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Supplier: CSA Group
Description: IEC 60747-8:2010 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B: insulated-gate depletion (normally on) type; - type C: insulated-gate enhancement (normally off) type. The main changes with respect to the previous
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Supplier: MACOM
Description: The MABC-001000-DP000L is a bias control module that provides proper gate voltage and pulsed drain voltage biasing for GaN on SiC, GaN on Si, or GaAs RF power transistors or modules utilizing depletion mode semiconductor technology.
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Performance Characteristics of EPAD (R) Precision Matched Pair MOSFET Array
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