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Supplier: Infineon Technologies AG
Description: N-channel depletion mode small signal transistor for industrial and consumer applications in SOT-23-3 package The N-channel depletion mode MOSFET BSS169I in SOT-23-3 package features VDS 100 V and RDS(on),max of 12 Ohm. With an optimal price
- MOSFET Operating Mode: Depletion
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Infineon Technologies AG
Description: N-channel depletion mode small signal transistor for industrial and consumer applications in SOT-23-3 package The N-channel depletion mode MOSFET BSS139I in SOT-23-3 package features VDS 250 V and RDS(on),max of 30 Ohm. With an optimal price
- MOSFET Operating Mode: Depletion
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Infineon Technologies AG
Description: Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs. Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component it is possible to realize a simple
- Package Type: SOT223, Other
- Polarity: N-Channel, Other
- Transistor Type: MOSFET
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Supplier: Infineon Technologies AG
Description: Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs. Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component it is possible to realize a simple
- Package Type: SOT223, Other
- Polarity: N-Channel, Other
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CHANNEL DEPLETION MODE
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: MOSFET D2 Depletion Mode Power MOSFETs
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Littelfuse, Inc.
Description: Depletion Mode MOSFET DevicesOur N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: The LND250 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND250 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp
- Package Type: SOT23
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp
- Package Type: TO-92, SOT23, SOT89
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high
- Package Type: SOT23
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input
- Package Type: SOT89, TO-251 / TO-252
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power
- Package Type: TO-220, Other
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power
- Package Type: TO-247, Other
- Polarity: N-Channel
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 8-SOIC
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 8-SOIC
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON TYPES 213821 , 213822, 2N3823 JANTX, JANTXV, AND JANS
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL, DEPLETION MODE, MOSFET, 20O, TO-92-3. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Utmel Electronic Limited
Description: DUAL N CH RF MOSFET, 12V, 30MA, 4-SOT-143R - More Details
- Noise Figure: 0.6000 dB
- Number of Transistors in the Chip: 1
- Operating Mode: Depletion, Other
- PD: 200 milliwatts
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Supplier: Win Source Electronics
Description: Manufacturer: Supertex, Inc Win Source Part Number: 1202629-LND250K1 Manufacturer Homepage: www.supertex.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
- MOSFET Operating Mode: Depletion
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: IXYS Win Source Part Number: 1191271-IXTP02N50D Manufacturer Homepage: www.ixys.com Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
- MOSFET Operating Mode: Depletion
- Package Type: SOT3
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N CHANNEL, DUAL GATE, DEPLETION TYPE, INSULATED GATE, SILICON DEVICE TYPES 3N201, 3N202, 3N203 AND TX, TXV
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 500W @ 12us/3%/50V ¦ 2.856GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET DepletionMode MOSFET
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: IXYS Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs Series: Depletion Package: Tape & Reel (TR) /Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature: -55°C
- Package Type: SOT3, TO-251 / TO-252
- Transistor Type: MOSFET
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Supplier: Rochester Electronics
Description: 60V-600V N-Channel Depletion Mode MOSFET
- Package Type: SOT23, Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 800W @ 128us/2%/50V ¦ 1.090GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For Use
- Operating Frequency: 1090 MHz
- Output Power: 800 watts
- Package Type: Other
- Power Gain: 17 dB
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 50W @ 1ms/15%/50V ¦ 5.2-5.9GHz Instantaneous Operating Frequency Range ¦ 50O Internally Impedance Matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Output Power: 50 watts
- Package Type: Other
- Power Gain: 14 dB
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Description: Gives standards for the following categories of field-effect transistors : -Type A: junction-gate type; -Type B: insulated-gate depletion type; -Type C: insulated-gate enhancement type.
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Supplier: Richardson RFPD
Description: TA9110K-EVB-C is a test fixture for TA9110K , a depletion mode GaN HEMT, optimized for 3.3-3.8GHz.
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Supplier: RS Components, Ltd.
Description: The Microchip LND01 is a low threshold, depletion mode (normally on) MOSFET transistor. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices. Channel Type = N Maximum
- Package Type: SOT23, Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: MACOM
Description: The MABC-001000-DP000L is a bias control module that provides proper gate voltage and pulsed drain voltage biasing for GaN on SiC, GaN on Si, or GaAs RF power transistors or modules utilizing depletion mode semiconductor technology.
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65050-372LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain, and excellent
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 450 to 6000 MHz
- Maximum Gain: 15.5 dB
- Maximum Operating Voltage: 3 volts
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