High Voltage RF Switch

Description: Configuration Features Economizer : Without Power Switching : Yes Contact Features Auxiliary Contacts : Without High Voltage Relay Contact Arrangement : 2 Form

Description: Configuration Features Economizer : Without Power Switching : Yes Contact Features Auxiliary Contacts : Without High Voltage Relay Contact Arrangement : 2 Form

Description: Configuration Features Economizer : Without Power Switching : Yes Contact Features Auxiliary Contacts : Without High Voltage Relay Contact Arrangement : 2 Form

Description: Configuration Features Economizer : Without Power Switching : Yes Contact Features Auxiliary Contacts : Without High Voltage Relay Contact Arrangement : 2 Form

Description: RF version Extended operations in extreme environments High voltage holdoff and switching ability Voltage holdoff increases at upper end of pull-in range Not ESD sensitive

• Configuration: Normally Open (NO)
• Current Rating: 1 amps
• DC Voltage Rating: 500 volts
• Pole and Throw Specifications: Single Pole, Single Throw (SPST)

Description: The CMD230 is a general purpose broadband RF / Microwave high isolation reflective MMIC SPDT switch in die form. Covering DC to 26 GHz, the CMD230 features a low insertion loss of 1.4 dB and high isolation of 40 dB at 13 GHz. The CMD230 switch MMIC operates using

• Actuator Type: SPDT
• Frequency Range: 26000 MHz
• Insertion Loss: 1.4 dB
• Isolation (Port to Port): 40 dB

Description: The CMD215 is a general purpose broadband RF / Microwave high isolation reflective MMIC SPDT switch in die form. Covering DC to 40 GHz, the CMD215 features a low insertion loss of 2.3 dB and high isolation of 36 dB to 20 GHz. The CMD215 switch MMIC operates using

• Actuator Type: SPDT
• Frequency Range: 40000 MHz
• Insertion Loss: 2.3 dB
• Isolation (Port to Port): 36 dB

Description: High voltage vacuum relays by INNOVACERA are essential components in various advanced electronic systems, including airborne, mobile, and marine communication devices. Their robust design ensures reliable performance in demanding applications such as radio frequency (RF)

• Applications: Electronics / RF-Microwave, Other
• Material Type: Specialty Ceramic

Description: PNP Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN26 (NPN) Pb

• I_C(max): 30 to 200 milliamps
• Package Type: SOT23, Other
• Packing Method: Tape Reel, Other
• Polarity: Other, PNP

Description: Switching Voltage Regulators High Efficiency RF Front-End PMIC for Hi

• Regulator Category: Switching Regulator

Description: The SKYA21037 is a state-of-the-art CMOS, silicon-on-insulator (SOI) double-pole, double-throw (DPDT) switch. The switch provides high-linearity performance, low insertion loss, and high isolation. Switching is controlled by one voltage input (CTRL1).

• Actuator Type: DPDT, Other
• Frequency Range: 400 to 3800 MHz
• Insertion Loss: 0.5000 dB
• Package Type: Other

Description: NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb

• Package Type: SOT23, Other
• Polarity: NPN, Other
• Transistor Type: Bipolar RF Transistors

Description: The MM5130 is the world’s first generally available high-power SP4T RF Ideal Switch. It can handle 25 W forward power while providing ultra-low insertion loss. It has superior linearity from 26 GHz down to DC and performs more than 3 billion switching cycles. The four

• Actuator Type: SPST, SP4T
• Actuator Voltage: 89 volts
• Frequency Range: 26000 MHz
• Insertion Loss: 0.1000 to 1.3 dB

Description: miniature ATSLP package and comprises of a high power CMOS SP8T switch with integrated GPIO interface. This RF switch is a perfect solution for multimode handsets based on LTE and WCDMA. The switch is controlled via a GPIO interface. It features DC-free RF

• Actuator Type: Other
• Actuator Voltage: 2.4 to 3.4 volts
• Control Interface: Other
• Frequency Range: 100 to 3800 MHz

Description: The uPG2179TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and other L, S-band applications. This device operates with dual control voltages of 2.5 to 5.3 V. This device can operate from 0.05 to 3.0 GHz, with low insertion loss and high

• Actuator Type: SPDT
• Actuator Voltage: 2.5 to 5.3 volts
• Control Interface: Local Control
• Frequency Range: 10 to 3000 MHz

Description: when the voltage crosses zero. The instant-ON type (RF1B), switches on when the control voltage is applied. Switch OFF occurs when current crosses zero. Integrated transils provide protection against overvoltages. A green LED indicates presence of the control

• Dielectric Strength (Isolation Voltage): 3.75 kilovolts
• Maximum Current: 25 amps
• Mounting: Socket or Plug-in Style
• Operating Temperature: -22 to 176 F

Description: The RF series from RAFI offers you a milestone in key switch development. Today it’s a standard in industry. The RF 15 measures 15 x 15 mm, while the RF 19 comes in the dimensions 19 x 19 mm. Outstanding qualities of the tactile switch are its full-surface

• Actuator Specifications: Flush Pushbutton
• Base Material: Thermoplastic / Plastic
• Configuration: Normally Open (NO)
• Features: UL listed, Illuminated Switch, RoHS

Description: The SKY13597-684LF is a single-pole, four-throw (SP4T) switch. No external DC blocking capacitors are required on the RF paths as long as there is no DC voltage on the RF line. The switch can operate over the temperature range of -40 °C to +90 °C . Switching

• Actuator Type: SP4T, Other
• Frequency Range: 700 to 3800 MHz
• Package Type: Surface Mount, Other

Description: available with SMA or Type N connectors. Our SMA and Type N electromechanical relay switches have a minimum frequency of DC and a maximum frequency range between 4 GHz and 18 GHz. These electro-mechanical RF switches are single pole dual throw (SPDT) or single pole 4 throw

Description: Silicon RF Switching Diode Summary of Features For band switching in TV/VTR tuners and mobile applications Very low forward resistance (typ. 0.45 O @ 3 mA) Small capacitance Pb-free (RoHS compliant) package Potential

• Configuration: Single
• Diode Applications: Switching
• Diode Type: PIN Diodes
• I_F: 100 mA

Description: LTE handset applications. The RF ports can be directly connected in 50 ohm systems and control logic is compatible with 1.3 V to 2.7 V systems. The supply voltage is intended for connection to 2.8 V systems but the device is operable from 2.4 V to 5.5 V. The compact 1.1 mm x 1.5 mm

Description: High-Speed Microohmmeter Recognized as the industry's fastest precision microohmmeter, the model 1750 has become the #1 choice in manufacturing environments. Fuse manufacturers use it for nondestructive tests where the unmatched precision increases the process yield to the point where

• Display Digits: 7 or More Digits
• Features: Auto-Ranging, Programmable, Range Switch
• Form Factor: Bench / Free-Standing
• Operating Temperature: 0.0 to 50 C

Description: At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high

• Actuator Type: SPST
• Frequency Range: 0.0 to 50000 MHz
• Impedance: 75 ohms
• Insertion Loss: 0.1000 to 2 dB

Description: The F2932EVBI is a fully populated evaluation board which allows the customer to easily evaluate the F2932 RF switch. “Thru” calibration connectors are conveniently located on the eval board to simplify the calibration process prior to making any RF measurements. Each RF

• Category: Development Board

Description: • Direct interfacing to microcontrollers with supply voltages from 3V to 5V • Advanced low-power management with local and remote wake-up support, available at all times, even when the internal VIO and VCC supplies are switched off • Protection and diagnostic functions

• Form Factor / Package: Surface Mount Technology (SMT), Other

Description: ) between the PA output and the antenna switch provides ultimate flexibility in DECT applications. A Normal Transmit Power (NTP) input is used to control power between –10 dBm and +25 dBm. NTP is a voltage-operated control with a very high input impedance (>100 kO) and a range

• Amplifier Type: Power Amplifier
• Maximum Operating Voltage: 4.5 volts
• Minimum Operating Voltage: 3 volts
• Output Power( P_1dB): 25 dBm

Description: Qorvo's QPC6044 is a Silicon on Insulator (SOI) single-pole, 4-throw (SP4T) switch, designed for use in cellular, 3G, LTE, and other high performance communications systems. It offers high isolation symmetric topology with excellent linearity and power handling capability. No

• Configuration: SP4T
• Min Operating Current: 0.1000 mA
• Package Type: Other
• RoHS Compliant: Yes

Description: operation. These include modern, lighted push-button switches for the command functions, power, standby, operate and pulse, a control for setting the output level of the amplifier, and a meter for monitoring critical operating voltages and currents. Remote control is provided through a

• Frequency Range: 220 MHz

Description: The Model AR-35 is a portable, lightweight, waterproof, fully automatic band-switching RF booster amplifier for multi-band VHF/UHF Tactical Radio equipment employing legacy, proprietary and emerging waveforms. The amplifier covers the frequency band of 30-512 MHz using six high

• Amplifier Type: Power Amplifier, Other
• Applications: Military / Defense, SATCOM Amplifier
• Frequency Range: 30 to 512 MHz
• Input VSWR: 1.5 :1

Description: Features: Frequency Range: 50 MHz to 40 GHz Maximum Power: +23 dBm (200 mW) Max Switched Current: +23 dBm (200 mW) Max Switched Voltage: ±0.13 db, 0 dBm to -30 dBm | ±0.13 dB, ±0.01 dB dB/dB from 0 dBm to +20 dBm Max Switched Power

• Frequency Range: 40000 MHz