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Supplier: Broadcom Inc.
Description: The MiniPak HMPS-282x family of Schottky diodes is the most consistent and best all-round device available, and finds applications in mixing, detecting, switching, sampling, clamping and wave shaping at frequencies up to 6 GHz. The MiniPak package offers reduced parasitics when compared to
- Diode Applications: Switching, Detector, Mixer, Other
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- IR: 1.00E-4 mA
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Supplier: Dexter Magnetic Technologies, Inc.
Description: Microwave circulators and isolators are used primarily in radar and communication systems. These devices typically consist of a ground plane, microwave ferrite and a permanent magnet. These devices are critical in the switching and routing of microwave energy. An isolator is
- Component Type: Isolator, Circulator
- Configuration: Waveguide
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Supplier: APITech
Description: API Technologies designs a large selection of broadband, high isolation switches including PIN diode and high speed GaAs designs in frequencies up to 22 GHz featuring exceptional low loss performance.
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Supplier: Accuris
Description: AUTOMATED ENGINEERING DOCUMENT PREPARATION SYSTEM SEMICONDUCTOR DEVICES, MICROWAVE DIODES
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Supplier: Accuris
Description: Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
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Supplier: Accuris
Description: Semiconductor devices - Discrete devices Part 4: Microwave diodes and transistors
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Supplier: APITech
Description: API Technologies specializes in offering fully customized, high performance and high reliability silicon microwave diodes for space, satellite and mega constellation applications. Our PIN, LIM, Step Recovery & Tuning Varactor microwave diodes provide broadband performance
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Supplier: Accuris
Description: Semiconductor Devices - Discrete Devices - Part 4-2: Microwave Diodes and Transistors - Integrated-Circuit Microwave Amplifiers - Blank Detail Specifications
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Supplier: Radiall
Description: 3 GHz frequency, SMA connector, failsafe actuator, SPDT switch. Optional supp. diodes.
- Actuator Type: SPDT
- Actuator Voltage: 28 volts
- Connector: SMA
- Frequency Range: 0.0 to 3000 MHz
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Supplier: Radiall
Description: 3 GHz frequency, N female connector, latching actuator, transfer switch. Optional indicator, and supp. diodes.
- Actuator Type: Other
- Actuator Voltage: 12 volts
- Connector: Type N
- Frequency Range: 0.0 to 3000 MHz
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Supplier: Radiall
Description: 3 GHz frequency, SMA connector, failsafe actuator, SPDT switch. Optional indicator and supp. diodes.
- Actuator Type: SPDT
- Actuator Voltage: 28 volts
- Connector: SMA
- Frequency Range: 0.0 to 3000 MHz
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Supplier: Radiall
Description: 18 GHz frequency, SMA connector, latching actuator, transfer switch. Optional indicator, and supp. diodes.
- Actuator Type: Other
- Actuator Voltage: 28 volts
- Connector: SMA
- Frequency Range: 0.0 to 18000 MHz
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Supplier: Richardson RFPD
Description: incorporating beam lead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using MACOM's patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form
- Actuator Type: SPDT, Other
- Frequency Range: 50 to 26500 MHz
- Insertion Loss: 0.7000 dB
- Isolation (Port to Port): 42 dB
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Supplier: Richardson RFPD
Description: incorporating beam lead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using MACOM's patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form
- Actuator Type: SPST, Other
- Frequency Range: 50 to 26500 MHz
- Insertion Loss: 0.7000 dB
- Isolation (Port to Port): 42 dB
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Supplier: Richardson RFPD
Description: incorporating beam lead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using MACOM's patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form
- Actuator Type: Other
- Frequency Range: 50 to 26500 MHz
- Insertion Loss: 0.9000 dB
- Isolation (Port to Port): 42 dB
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Supplier: Richardson RFPD
Description: The MASW-004100-1193 is a SP4T series-shunt broad band switch made with MACOM's unique HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or bias by imbedding them
- Actuator Type: SP4T, Other
- Frequency Range: 50 to 26000 MHz
- Insertion Loss: 0.9000 dB
- Isolation (Port to Port): 34 dB
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Supplier: TEGAM, Inc.
Description: Microwave Calibration Feedthrough Standard 9 kHz to 18 GHz TEGAM Temperature Stabilized Coaxial RF Power Transfer Standards enable the precise measurement of microwave power in the 9 kHz to 18 GHz frequency range. These standards are highly accurate and stable with time and
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Supplier: CSA Group
Description: Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect transistors. This second edition
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Supplier: Crane Aerospace & Electronics
Description: The O-DET-2116 RF BIT Module provides several integrated functions for detection and measurement of RF levels. The unit consists of an internal temperature compensated RF detector. This rectifi es the RF signal and produces a dc level from the input signal. The diode output feeds a sample and
- Frequency Band: 9400 to 10000 MHz
- Input VSWR: 2.1 :1
- Limiter Type: Conventional Limiter
- Package Type: Connectorized
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Description: Gives standards for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes, bipolar transistor and field-effet transistors.
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Supplier: MACOM
Description: MACOM’s PIN limiter diodes provide excellent broadband performance from 1 MHz to 20 GHz for receiver protector circuits. Our PIN limiter diodes are available in die form, plastic and ceramic packaging. Our ceramic packaged diode series is ideal for waveguide, coaxial, and
- Diode Applications: Limiter
- Diode Type: PIN Diodes
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Description: characterization for rf/microwave amplifier, oscillator, and filter circuit design and analysis. You will understand why capacitors act as inductors and vice versa and why amplifiers work like oscillators, while oscillators for local area networks work more like local area heaters.
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Supplier: Soliton Laser und Messtechnik GmbH
Description: By injecting laser light from diodes into a "Whispering Gallery Mode" (WGM) microresonator, which originally comes from microwave technology, OEWave's ultra-narrow-band laser can be offered at different wavelengths. With the least phase noise, line widths of up to 80 Hz or 1
- Laser Output: Continuous Wave
- Laser Power: 250 milliwatts
- Laser Type: Laser Diode Modules
- Wavelength Range: 375 to 2100 nm
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Supplier: Infineon Technologies AG
Description: PIN Diode for high speed switching Summary of Features HiRel Discrete and Microwave Semiconductor PIN Diode for high speed switching of RF signals Very low capacitance Hermetically sealed microwave package Type Variant No.s 01 to 02 Potential Applications Quality level
- Diode Type: RF Diodes
- IF: 5000 mA
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks APD series of silicon PIN diodes are designed for use as switch and attenuator devices in high-performance RF and microwave circuits. The PIN diode designs are useful over a wide range of frequencies from below 100 MHz to beyond 30 GHz. These devices use Skyworks well
- Diode Type: PIN Diodes
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Supplier: Crane Aerospace & Electronics
Description: The T-ISLT-2-2131 is a PIN diode based high power microwave switch covering 6 to 18 GHz. Power levels up to 100 W CW are handled over the operating temperature range. The switch offers high isolation and termination for the non-selected port. This switch is suitable for signal control
- Actuator Type: SPDT
- Actuator Voltage: 5 to 30 volts
- Connector: SMA
- Control Interface: TTL
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Supplier: Frontier Electronics Corp.
Description: Designed for short protection in microwave ovens and other high voltage equipment. Designed as a short protector for use in microwave ovens and other high voltage equipment Maximum reverse current: 10µA
- Diode Applications: Protector, High Voltage
- IR: 0.0100 mA
- RoHS Compliant: Yes
- VR: 1500 to 6000 volts
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Supplier: MACOM
Description: MACOM’s Silicon and GaAs varactor multiplier diodes provide broadband performance ranging from 10 MHz to 70 GHz. They are ideal for multiplier circuits and are available in die form, plastic and ceramic packaging. These diodes boast a flip chip series for higher frequency millimeter
- CT: 0.2000 to 3.5 pF
- Configuration: Single
- Package Type: Other
- VR: 14 to 70 volts
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Supplier: MACOM
Description: At MACOM we produce a wide variety of Schottky diodes as your best choice for microwave circuit detector and mixer applications ranging from DC to 80 GHz. These devices are available in die form, SURMOUNTTM, flip chip, plastic and ceramic packaging.
- Applications: Detector, Mixer
- Package Type: Other
- VF: 0.0900 to 1200 volts
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Supplier: RS Components, Ltd.
Description: RF (Radio Frequency) diodes suitable for use in HF, RF and Microwave mixing and detection applications. Diode Configuration = Series Maximum Continuous Forward Current = 200mA Number of Elements per Chip = 2 Peak Reverse Repetitive Voltage = 30V Mounting Type = Surface Mount
- Diode Applications: Rectifier Diode
- Diode Type: Schottky Barrier Diodes
- IF: 200 mA
- VR: 30 volts
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Supplier: Skyworks Solutions, Inc.
Description: These low-cost, surface mountable, plastic packaged silicon mixer Schottky diodes are designed for RF and microwave mixers and detectors. They include low barrier diodes and zero-bias detectors that combine Skyworks advanced semiconductor technology with low-cost packaging
- Applications: Mixer
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks APD series of silicon PIN diodes are designed for use as switch and attenuator devices in high-performance RF and microwave circuits. The PIN diode designs are useful over a wide range of frequencies from below 100 MHz to beyond 30 GHz. These devices use Skyworks well
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Supplier: Broadcom Inc.
Description: The HPND-4005 beamlead PIN diode is designed for use in stripline or microstrip circuits. Applications include Switching, attenuating, phase shifting, limiting, and modulating at microwave frequencies. The extremely low capacitance of this device makes it ideal for circuits requiring
- IF: 20 mA
- IR: 100 mA
- Life Cycle Stage: Maturity
- PD: 250 milliwatts
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Supplier: DigiKey
Description: DIODE MODULE AND COMPONENTS MODU
- Voltage Rating: 250 volts
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Supplier: RS Components, Ltd.
Description: RF (Radio Frequency) diodes suitable for use in HF, RF and Microwave mixing and detection applications. Maximum Continuous Forward Current = 200mA Diode Configuration = Series Number of Elements per Chip = 2 Peak Reverse Repetitive Voltage = 30V Mounting Type = Surface Mount
- Diode Applications: Rectifier Diode
- Diode Type: Schottky Barrier Diodes
- IF: 200 mA
- Package Type: SOT23, Other
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Featured Products Top
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bettier. Tunnel diodes are widely used in microwave applications. The varicap diode, also known as the varactor diode, is used as (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
PIN Diode Switches for High Power Transceivers Skyworks’ silicon product offerings include high power PIN diode switches for use in a wide variety of microwave applications including WLAN, handset, Satcom (LNB/DBS-CATV), automotive, military, aerospace, defense (read more)
Browse RF Switches Datasheets for Skyworks Solutions, Inc. -
They include low barrier diodes and zero-bias detectors that combine Skyworks advanced semiconductor technology with low-cost packaging techniques. All diodes are 100 percent DC tested and deliver tight parameter distribution, which minimizes performance variability (read more)
Browse Diodes Datasheets for Skyworks Solutions, Inc. -
In modern RF and microwave systems, engineers face challenges like signal integrity, fast switching speeds, and space-constrained designs. The MA4AGSW2 addresses these needs with exceptional performance in a bare-die format (read more)
Browse RF Switches Datasheets for Win Source Electronics -
The HLM-40ABH is a wide bandwidth GaAs Schottky diode signal limiter featuring +35 dBm Input IP3 and 2W CW power handling. It offers low 0.7 dB insertion loss and 22 dB return loss from DC through Ka band with a typical 1dB compression point of 9 dBm. Its moderate power handling makes it ideal (read more)
Browse RF Limiters Datasheets for Marki Microwave LLC -
The AMM-7473PC is a high-linearity, low noise distributed amplifier that provides +25dBm output power across a 400 MHz to 26.5GHz band and up to 16GHz gain. Ideal for radar and satellite communications, the amplifier can serve either as a linear signal amplifier or as a saturated driver amplifier for H- or S-diode mixers. (read more)
Browse RF Amplifiers Datasheets for Marki Microwave LLC -
The HLM-20BH is a wideband GaAs Schottky diode limiter delivering up to 4 W power handling and 30 dBm IP3 across DC to (read more)
Browse RF Limiters Datasheets for Marki Microwave LLC -
The MMD-0415HPSM is a MMIC doubler fabricated with GaAs Schottky diodes, operating over a guaranteed 2 to 7.5 GHz input frequency range or a doubled output frequency range of 4 to 15 GHz. It features excellent conversion loss, superior isolations, and harmonic suppressions across a broad bandwidth. Available as a 3x3mm QFN. (read more)
Browse RF Frequency Multipliers Datasheets for Marki Microwave LLC -
The MMD-40120H is a MMIC mmWave doubler fabricated with GaAs Schottky diodes, operating over a 20 to 60 GHz input frequency range or a doubled output frequency range of 40 to 120 GHz. The MMD-40120H is available as a connectorized module using 1.0 mm connectors on the output or wire bondable die. (read more)
Browse RF Frequency Multipliers Datasheets for Marki Microwave LLC -
The HLM-8011U is a GaAs Schottky diode signal limiter featuring high IP3 and high power handling. It delivers low insertion loss and high return loss from DC through Ka band and features a typical 1dB compression point of +10dBm. The limiter’s low +7 dBm flat leakage makes it ideal for protecting sensitive components and for applications requiring high linearity. (read more)
Browse RF Limiters Datasheets for Marki Microwave LLC
Conduct Research Top
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AG312: Design with PIN Diodes
The PIN diode finds wide usage in RF, UHF and microwave circuits. It is fundamentally a device whose impedance, at these frequencies, is controlled by DC excitation. A unique feature of the PIN diode is its ability to control large amounts of RF power with much lower levels of DC. The PIN diode
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ZTS PIN Diode Switch Introduction
The microwave switch make use of PIN diode to achieve the impedance characteristics of ON or OFF under the forward and reverse bias voltages, and realizes the control of microwave signal conversion.
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Considerations When Selecting A RF Power Sensor
Most power sensors now available fall into one of three design categories: thermistor, thermocouple, and diode detector. In a thermistor design, RF power is measured through DC substitution of RF energy heating the thermistor. In a thermocouple design, absorbed microwave power causes heating
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RF Isolator & Circulator Frequency Division in Common Areas
ZTS offers a wide variety of isolators to fit customers requirements. These are two-port devices that transmit microwave or radio frequency power in one direction only and block the signal in the opposite direction. They can be thought of as a diode for RF energy. Isolators are used to isolate
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AN3010: An Examination of Recovery Time of an Integrated Limiter/LNA
GaAs monolithic microwave integrated circuits (MMICs) are widely used in commercial and military microwave systems. Due to the fine geometry used in MMIC transistors, these circuits are susceptible to damage from high-power spurious electromagnetic (EM) radiation, either from microwave transmitters
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The engineer knowledge: electrical engineering
… mechanisms, 27.2.5 characteristic equation of the PN junction, 27.2.6 Zener-diode-27.2.7 tunnel diodes, 27.2.8 variable capacitance diodes (" varactors "), power rectifier diodes, PIN diode-27.2.10 microwave diodes , rearwardly diodes .
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Batch Density Wave and Contact Effects 3 Observed with Microwave Harmonic Mixing in NbSe
For comparison, the Harmonischen mixture through a rectifying microwave diode is observed for the first time to investigate the fundamental physical behavior of a rectifying contact.
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Hut, The engineer knowledge
… mechanisms, 27.2.5 characteristic equation of the PN junction, 27.2.6 Zener-diode-27.2.7 tunnel diodes, 27.2.8 variable capacitance diodes (" varactors "), power rectifier diodes, PIN diode-27.2.10 microwave diodes , rearwardly diodes .
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Experimental physics 3
2) generated the section 6.3, directed through hollow conductors (Bd. 2, Abschn.7.9) that is filled with the absorption gas and detected by a microwave diode .
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Over microwaves as room lade upper vibrations. I
In the second case, which operated consisting of coaxially cylindrically arranged electrodes with high anode voltage in strong axial magnetic field is used for generation of microwaves of diodes (Gliihkathode and anode) (U,his + 1500 Volt), also to show an electron …
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Microwave spectrum, dipole moment and structure of cyclobutanone
Became a part of the I < lystronleistung on the same or a second microwave diode rnit this mixed Harmonischen and Differenzfrequen-Zen rnit sclektiv to a tunable Kurzwellcnempfanger verstarkt and measured.