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Supplier: ROHM Semiconductor USA, LLC
Description: 650V 29A N-channel SiC power MOSFET
- Package Type: TO-220
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: ROHM Semiconductor USA, LLC
Description: S2305 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
- IDSS: 10000 milliamps
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Commercial
- V(BR)DSS: 1200 volts
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Supplier: ROHM Semiconductor USA, LLC
Description: S2301 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
- IDSS: 40000 milliamps
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Commercial
- V(BR)DSS: 1200 volts
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Supplier: ROHM Semiconductor USA, LLC
Description: S2306 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
- IDSS: 22000 milliamps
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Commercial
- V(BR)DSS: 1200 volts
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Supplier: Microchip Technology, Inc.
Description: Direct mounting to heatsink (isolated package) Internal thermistor for temperature monitoring (optional) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Full bridge + series FRED and SiC parallel diodes VDSS (V): 1000 RDSon (mR) typ: 450 Current (A)
- Configuration: Full Bridge
- Output Current: 14 amps
- Output Voltage: 1000 volts
- Technology: MOSFET, SiC
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Supplier: Vincotech GmbH
Description: Integrated DC capacitor Kelvin Emitter for improved switching performance Low inductive commutation loop Mixed Voltage Neutral Point Clamped Topology (T-Type) SiC MOSFET Temperature sensor High Blocking Voltage with low drain source on
- Configuration: Other / Specialty Configuration
- Output Current: 100 amps
- Output Voltage: 1200 volts
- Technology: SiC, Other / Specialty Technology
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Supplier: Vincotech GmbH
Description: Integrated DC capacitor Neutral Boost PFC SiC MOSFET Temperature sensor High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up Convex shaped substrate for superior thermal contact Thermo-mechanical push-and-pull
- Configuration: Power Factor Correction (PFC)
- Output Current: 90 amps
- Output Voltage: 650 volts
- Technology: SiC, Other / Specialty Technology
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Supplier: Microchip Technology, Inc.
Description: SiC Power MOSFET Low RDS(on) High temperature performance Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring (optional) High efficiency converter Outstanding performance at high
- Output Current: 641 amps
- Output Voltage: 1200 volts
- Technology: MOSFET, SiC
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Supplier: Microchip Technology, Inc.
Description: SiC Power MOSFET Low RDS(on) High temperature performance Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring (optional) High efficiency converter Outstanding performance at high
- Output Current: 394 amps
- Output Voltage: 1200 volts
- Technology: MOSFET, SiC
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Supplier: Microchip Technology, Inc.
Description: SiC Power MOSFET Low RDS(on) High temperature performance Kelvin source for easy drive Low stray inductance Internal thermistor for temperature monitoring (optional) High efficiency converter Outstanding performance at high
- Output Current: 754 amps
- Output Voltage: 1200 volts
- Technology: MOSFET, SiC
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Supplier: Vincotech GmbH
Description: 3ph Inverter Low and high side Kelvin Emitter for improved switching performance MOSFET Open Emitter configuration Temperature sensor High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology
- Configuration: Six-Pack
- Output Current: 100 amps
- Output Voltage: 1200 volts
- Technology: SiC, Other / Specialty Technology
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Supplier: Vincotech GmbH
Description: 3ph Inverter Low and high side Kelvin Emitter for improved switching performance MOSFET Open Emitter configuration Temperature sensor High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology
- Configuration: Six-Pack
- Output Current: 50 amps
- Output Voltage: 1200 volts
- Technology: SiC, Other / Specialty Technology
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Supplier: Littelfuse, Inc.
Description: Industrial grade, single switch SiC mosfet built in a 4 connectors, UL certified SOT227B package providing 3000V isolation (1s). Featuring a kelvin connection pin, and exhibiting good power cycling characteristics, and a very fast and low losses switching behaviour, this
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Infineon Technologies AG
Description: bipolar driving. Typical voltage levels for SiC are easily configurable by utilizing few resistors. Summary of Features Up to 1.5 W output power to cover use-cases with different SiC MOSFETs and switching frequencies 1% regulation of the positive VGS for
- Category: Development Board
- Host Interface: Other
- Supported System: Other
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Supplier: ROHM Semiconductor GmbH
Description: BSM180C12P2E202 is a SiC (silicon carbide) power module with low surge and low switching loss, suitable for converter, photovoltaics, wind power generation, heating equipment.
- IDSS: 204000 milliamps
- PD: 1.36E6 milliwatts
- Package Type: Other
- TJ: -40 to 125 C
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Supplier: ROHM Semiconductor GmbH
Description: 1700V 4A N-channel SiC (Silicon Carbide) power MOSFET.
- Package Type: Other
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor GmbH
Description: 650V 30A N-channel SiC (Silicon Carbide) power MOSFET.
- Package Type: TO-247, Other
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor GmbH
Description: 1700V 6A N-channel SiC (Silicon Carbide) power MOSFET.
- Package Type: Other
- Transistor Grade / Operating Range: Commercial
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Supplier: Littelfuse, Inc.
Description: SMPD Package:DCB based isolated package improves thermal resistance and power handling capabilityIsolation voltage 2500V AC (RMS), 1 minuteLow drain-to-tab stray capacitanceOptimized package with separate driver source pinAdvanced topside cooled packaging simplifies thermal management
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Supplier: Richardson RFPD
Description: The SIC1182K is a single channel gate driver in an eSOP-R16B package for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to +/-8 A peak output drive current enables the product to drive
- Peak Output Current: 8 amps
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET SiC Power MOSFET
- Transistor Type: MOSFET
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Supplier: Wolfspeed
Description: Features: Supports 900V and 1200V (C3M™) SiC MOSFETs Gate driver output voltage = +15 V (max) / -3.3 V (min) Integrated isolated power supply High Creepage (9mm) clearance Resistor network allows user friendly optimization of gate signals Full reference design files available
- Category: Development Board
- Supported System: Power
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Supplier: Richardson RFPD
Description: . Features 16 kW/L power density Up to 130 C Tj Peak efficiency 98% SiC MOSFET power modules: Microchip MSCSM120AM042CD3AG AgileSwitch 2ASC-12A1HP Gate Driver core 700 VDC / 200 ARMS Compact water cooled Up to 20 k
- Category: Development Board
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Supplier: Nexperia B.V.
Description: The NSF030120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 1249743-SIC631CD-T1- GE3 Series: VRPower Packaging: Reel - TR Operating Temperature Range: -40°C ~ 150°C (TJ) Features: Bootstrap Circuit, Diode Emulation Package: PowerPAK MLP55-31L Applications
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Supplier: Nexperia B.V.
Description: The NSF030120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high
- IDSS: 67000 milliamps
- MOSFET Operating Mode: Enhancement
- Package Type: Other
- TJ: 175 C
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Supplier: Richardson RFPD
Description: Phase leg SiC MOSFET Power Module
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Semikron, Inc.
Description: Highest Power Output and Efficiency SEMIKRON offers Full Silicon Carbide Power Modules in MiniSKiiP, SEMITOP and SEMITRANS housings. By using SiC MOSFETs of the leading suppliers highest output power and power densities are reached in combination with high
- Configuration: Half-Bridge, H-Bridge, Six-Pack
- Output Current: 18 to 478 amps
- Output Voltage: 1200 to 1700 volts
- Technology: SiC
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 933778-SIC788ACD-T1- GE3 Series: VRPower® Operating Temperature Range: -40°C ~ 150°C (TJ) Features: Half Bridge Driver Synchronous Buck Converters Power MOSFET PowerPAK® MLP66-40 Package: PowerPAK®
- IC Package Type: Other
- Operating Temperature: -40 to 150 C
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Supplier: Acme Chip Technology Co., Limited
Description: 1200V 90A SIC POWER MOSFET
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Converter Standard Package: 3,000 Mounting: SMD (SMT) Technology: Power MOSFET Interface: Logic, PWM Current - Output / Channel: 80A Fault Protection: Over Current, Over Temperature, UVLO Output Configuration: High Side Voltage - Load: 19V Load Type: Inductive Voltage
- Output Options: Inverting
- Supply Voltage (Vi): 3.3 to 5 volts
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Supplier: DigiKey
Description: Half Bridge Driver General Purpose Power MOSFET PowerPAK® MLP55-31L
- IC Package Type: Other
- Operating Temperature: -40 to 150 C
- Packing Method: Tape Reel
- Supply Voltage: 4.5 to 5.5 volts
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Supplier: Quarktwin Technology Ltd.
Description: Half Bridge Driver Synchronous Buck Converters Power MOSFET PowerPAK® MLP66-40
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: Other
- Operating Temperature: -40 to 150 C
- Output Configuration: Inverting
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Supplier: Broadcom Inc.
Description: The ACPL-W346 is a high-speed 2.5A gate drive optocoupler that contains an AlGaAs LED, which is optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving power and SiC(Silicon Carbide) MOSFETs used in inverter or
- Collector Emitter Breakdown Voltage: 8 to 30 volts
- Mounting Option: Surface Mount
- Operating Temperature: -40 to 105 C
- Optocoupler Input: AC, DC
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Supplier: ODG (Origin Data Global)
Description: SIC POWER MODULE
- IDSS: 180000 milliamps
- Package Type: Other
- Polarity: N-Channel, Other
- TJ: 175 C
Find Suppliers by Category Top
Featured Products Top
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Microchip's SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules from Richardson RFPD feature phase leg topology ranking from 700 volts (V), 538A to 1200 volts (V), 394 amperes (A) to 754 A at a case temperature (Tc) of 80 degrees Celsius. Offering higher power density and a (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Wolfspeed has added a new family of 2300 V WolfPACKTM baseplate-less silicon carbide power modules which enable utility-scale grid-tied 1500 V inverters ranging from > 250 kW to 10 mW+. Utility-scale, grid-tied Inverters are more efficient and reliable with (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
, potentially, overcome the challenges initiating new designs in this supply chain environment. Features: - Full SiC Dual Boost - Low inductive package (flowE2, 12mm housing) - High Switching Frequency Download Datasheet here. (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Microchip's next-generation 1200V Silicon Carbide IC (SiC) diodes and 700V SiC MOSFETs with high avalanche/repetitive Unclamped Inductive Switching (UIS) 3-phase 380/400V RMS input voltage, 50 Hz or 60 Hz 140 kHz switching frequency 700V DC output voltage (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
end equipment comes a greater need for protection. E-Fuse, enabled by Microchip's 700V and 1200V Silicon Carbide (SiC) technology, provides a faster, more reliable method for protecting power electronic applications. E-Fuse solutions can detect and interrupt fault currents microseconds (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Quasar200 and Pulsar600 Power Characterization Testers Wide bandgap (WBG) power devices such as SiC and GaN require a completely different approach to characterization than the previous generation (read more)
Browse Datasheets for Cosmic Equipment SpA -
create an advanced platform of AC solutions. Using a state-of-the-art SiC power switching architecture, they incorporate compactness, robustness, and functionality in a floor-standing chassis. The Sequoia Series is designed to refresh the MX and RS Series, while the Tahoe Series will refresh the BPS (read more)
Browse AC Power Sources Datasheets for AMETEK Programmable Power -
Nexperia announced the release of 1200 V silicon carbide (SiC) MOSFETs in QDPAK packaging, extending its growing wide-bandgap (WBG) portfolio with a top-side cooled surface-mount package optimized for high-power density and thermally demanding applications. Designed for high-efficiency, high (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Wolfspeed offers a family of 1200 V silicon carbide MOSFETs and Schottky diodes that are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high (read more)
Browse Diodes Datasheets for DigiKey
Conduct Research Top
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Wolfspeed SiC MOSFET-Based, Bidirectional, Three-Phase AC/DC Converters
This article demonstrates a design concept using commercially available SiC MOSFETs (C3M0065100K), which meets new market requirements for bidirectional functionality. A prototype 20-kW system in a simple two-level topology - switching at 48 kHz is shown. The prototype is tested to full power where
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SiC MOSFET-based Power Modules Utilizing Split Output Topology for Superior Dynamic Behavior
The body diode reverse recovery charge of a SiC MOSFET is lower than that of an Si MOSFET, but still not as beneficial; as with SiC Schottky diodes.
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Wolfspeed SiC MOSFETs Enable Improvements in Efficiency, Power Density and Cost for Three-Phase Industrial PFCs
The need for higher efficiency, greater power density, lower cost and bi-directionality pose design challenges when using silicon in traditional circuit approaches. An alternative utilizing SiC MOSFETs reduces switching losses and extends the usable switching frequency range of the two-level
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Cree's Wolfspeed Technology Moves Electric Vehicle Market to the Fast Lane with Newest 1,200 V SiC MOSFET
Wolfspeed, A Cree Company, announced a performance breakthrough in the ability to power the drivetrain of electric vehicles (EVs) using its new third generation 1,200 V SiC MOSFET family. This switching device, which enables high-voltage power conversion, solidifies the company's leadership
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What are MOSFETs? - Types and Features of High Voltage Super-Junction MOSFET
In the previous section, the product positioning of Si-MOSFETs, IGBTs and SiC-MOSFETs, which in recent years have become the most important power transistors, was reviewed, and super-junction MOSFETs (hereafter "SJ-MOSFETs"), which are representative of the latest high-voltage Si MOSFETs, were
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Application Benefits of using 4th Generation SiC MOSFETs
This article describes an experimental test using a step-down DC-DC converter with 500V input voltage and 7kW power, a simulated running test using an EV traction inverter with 800V input and 100kW, and an experimental test using a Totem-pole PFC circuit.
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New C3MTM 1200 V SiC MOSFET Increases Power Density and Efficiency in Solar Boost Converters
There is a growing need for high-efficiency power conversion (DC/DC) in a variety of industrial applications, including solar power generation. In solar power generation, the photovoltaic (PV) cells utilize the sun's energy to generate DC voltage in the range of 400 to 600 V DC. This DC needs
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Wolfspeed's New C3MTM 1200 V SiC MOSFET Increases Power Density and Efficiency in Solar Boost Converters
n solar power generation, the photovoltaic (PV) cells utilize the sun's energy to generate DC voltage in the range of 400 to 600 V DC. This DC needs to be boosted to approximately 850 V DC so that an inverter (DC/AC) can be utilized to generate 480 V AC to feed into the power grid
More Information Top
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Characterization of SiC Power Transistors for Power
Conversion Circuits Based on C-V Measurement
In present, SiC power transistors, especially SiC power MOSFETs and JFETs, are the most possible power switches for high switching frequency power conversion circuits due to fast turn-off capabil- ity.
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Advanced Power MOSFET Concepts
Although an inversion layer mobility of 165 cm2 /V-s has been observed in lateral MOSFET structures [4], the inversion layer mobility in high voltage 4H- SiC power MOSFET structure [5] is usually only 10–20 cm2 /V-s.
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SiC and GaN Semiconductors Report - World - 2013
Specific factors relating to the SiC MOSFET power device optimistic and conservative cases are discussed in more detail in the application sections of Chapter 4.
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Advanced High Voltage Power Device Concepts
The best transistor for this application has been determined to be the IGBT structure [26], although the 18 kV SiC power MOSFET is still a contender, in spite of its large on-resistance, due to its superior switching losses.
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SiC & GaN Power Semiconductors Report - 2014
Specific factors relating to the SiC MOSFET power device optimistic and conservative cases are discussed in more detail in the application sections of Chapter 4.
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2013 Combined Subject Index IEEE Industry Applications Society Publications
Cryogenic and high temperature performance of 4H- SiC power MOSFETs .
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Datasheet Driven Silicon Carbide Power MOSFET Model
Abstract—A compact model for SiC Power MOSFETs is pre- sented.
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10-kV SiC MOSFET-Based Boost Converter
Among them, a large effort has been devoted to the development of SiC power MOSFETs for high- voltage switching applications because of their much lower specific on-resistance when compared with silicon MOSFETs and their inherent fast-switching capability due to the…