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Supplier: ROHM Semiconductor USA, LLC
Description: S4001 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
- V(BR)DSS: 650 volts
- rDS(on): 0.03 ohms
- IDSS: 70,000 milliamps
- TJ: -55 to 175 C
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Supplier: ROHM Semiconductor USA, LLC
Description: S4002 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
- V(BR)DSS: 650 volts
- rDS(on): 0.022 ohms
- IDSS: 93,000 milliamps
- TJ: -55 to 175 C
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Supplier: ROHM Semiconductor USA, LLC
Description: S2308 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
- V(BR)DSS: 1,200 volts
- rDS(on): 0.28 ohms
- IDSS: 14,000 milliamps
- TJ: -55 to 175 C
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Supplier: ROHM Semiconductor USA, LLC
Description: 650V 29A N-channel SiC power MOSFET
- V(BR)DSS: 650 volts
- IDSS: 29,000 milliamps
- rDS(on): 0.12 ohms
- PD: 165,000 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Power Field-Effect Transistor, Product overview: IXFN50N120SIC from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing
- Features: MOSFET
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Supplier: Newark, An Avnet Company
Description: GATE DRIVER IC, SIC MOSFET/IGBT, 750V ROHS COMPLIANT: YES
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Supplier: ROHM Semiconductor GmbH
Description: 1700V 6A N-channel SiC (Silicon Carbide) power MOSFET.
- Transistor Grade / Operating Range: Commercial
- Features: Other
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Supplier: Utmel Electronic Limited
Description: MOSFET 650V NCH SIC TRENCH
- Features: MOSFET
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Supplier: Newark, An Avnet Company
Description: GATE DRIVER IC, SIC MOSFET/IGBT, 1.2KV ROHS COMPLIANT: YES
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Supplier: Newark, An Avnet Company
Description: DEVELOPMENT KIT, SIC MOSFET; Silicon Manufacturer:Microchip; Silicon Core Number:2ASC-17A1HP; Kit Application Type:Power Management; Application Sub Type:SiC MOSFET; Product Range:
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Supplier: Newark, An Avnet Company
Description: SIC MOSFET, N-CH, 18V, 73A, H-PSOF; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:650V; No. of Pins:8Pins; Rds(on) Test Voltage:18V; Power Dissipation:348W
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Supplier: ROHM Semiconductor GmbH
Description: 650V 30A N-channel SiC (Silicon Carbide) power MOSFET.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Package Type: TO-247
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Supplier: ROHM Semiconductor GmbH
Description: 1700V 4A N-channel SiC (Silicon Carbide) power MOSFET.
- Transistor Grade / Operating Range: Commercial
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: SCT3160KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Package Type: TO-247
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Supplier: Utmel Electronic Limited
Description: MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
- V(BR)DSS: 1,200 volts
- rDS(on): 0.08 ohms
- PD: 208,000 milliwatts
- TJ: -55 to 150 C
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Supplier: Littelfuse, Inc.
Description: Industrial grade, single switch SiC mosfet built in a 4 connectors, UL certified SOT227B package providing 3000V isolation (1s). Featuring a kelvin connection pin, and exhibiting good power cycling characteristics, and a very fast and low losses switching behaviour, this
- V(BR)DSS: 1,200 volts
- IDSS: 50,000 milliamps
- TJ: 175 C
- MOSFET Operating Mode: Enhancement
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Supplier: Littelfuse, Inc.
Description: SMPD Package:DCB based isolated package improves thermal resistance and power handling capabilityIsolation voltage 2500V AC (RMS), 1 minuteLow drain-to-tab stray capacitanceOptimized package with separate driver source pinAdvanced topside cooled packaging simplifies thermal managementRoHS
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Supplier: Vincotech GmbH
Description: Integrated DC capacitor Neutral Boost PFC SiC MOSFET Temperature sensor High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up Convex shaped substrate for superior thermal contact Thermo-mechanical
- Output Voltage: 650 volts
- Output Current: 90 amps
- Features: Other / Specialty Technology
- Configuration: Power Factor Correction (PFC)
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Supplier: Vincotech GmbH
Description: Kelvin Emitter for improved switching performance Integrated DC capacitor Temperature sensor Low inductive commutation loop Neutral Boost PFC SiC MOSFET Integrated Resistor for improved dynamic behavior High Blocking Voltage with low drain source on state resistance High speed
- Output Voltage: 650 volts
- Output Current: 90 amps
- Features: Other / Specialty Technology
- Configuration: Power Factor Correction (PFC)
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Supplier: Nexperia B.V.
Description: The NSF030120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high
- V(BR)DSS: 1,200 volts
- IDSS: 67,000 milliamps
- TJ: 175 C
- MOSFET Operating Mode: Enhancement
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Supplier: Nexperia B.V.
Description: The NSF040120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power
- V(BR)DSS: 1,200 volts
- IDSS: 65,000 milliamps
- TJ: 175 C
- MOSFET Operating Mode: Enhancement
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Supplier: Nexperia B.V.
Description: The NSF030120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high
- V(BR)DSS: 1,200 volts
- IDSS: 67,000 milliamps
- TJ: 175 C
- MOSFET Operating Mode: Enhancement
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Supplier: Nexperia B.V.
Description: The NSF040120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high
- V(BR)DSS: 1,200 volts
- IDSS: 55,000 milliamps
- TJ: 175 C
- MOSFET Operating Mode: Enhancement
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Supplier: Vincotech GmbH
Description: Common emitter point Half Bridge SiC MOSFET Temperature sensor High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up Convex shaped substrate for superior thermal contact Compact housing CTI600 housing
- Output Voltage: 1,200 volts
- Output Current: 510 amps
- Configuration: Half-Bridge
- Features: Other / Specialty Technology
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Supplier: Wolfspeed
Description: Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies such a boost converters and Aux power supplies. Optimized for
- Features: MOSFET, Other
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Supplier: Wolfspeed
Description: Features: Supports 900V and 1200V (C3M™) SiC MOSFETs Gate driver output voltage = +15 V (max) / -3.3 V (min) Integrated isolated power supply High Creepage (9mm) clearance Resistor network allows user friendly optimization of gate signals Full reference design files available
- Category: Development Board
- Supported System: Power
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Supplier: Infineon Technologies AG
Description: driving. Typical voltage levels for SiC are easily configurable by utilizing few resistors. Summary of Features Up to 1.5 W output power to cover use-cases with different SiC MOSFETs and switching frequencies 1% regulation of the positive VGS for best SiC RDS(ON)
- Category: Development Board
- Features: Other
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Supplier: Wolfspeed
Description: Wolfspeed introduces its latest C3MTM SiC MOSFET technology in die form. This new device is capable of 1000V blocking voltage across the entire operating temperature range, thereby greatly reducing derating requirements. C3M MOSFET die can be configured in parallel to achieve
- Features: MOSFET, Other
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Supplier: Vincotech GmbH
Description: resistance High speed SiC-MOSFET technology Resistant to Latch-up Clip-in, reliable mechanical connection, qualified for wave soldering Convex shaped substrate for superior thermal contact Thermo-mechanical push-and-pull force relief Press-fit pin Reliable cold welding connection
- Output Voltage: 1,200 volts
- Output Current: 25 amps
- Features: Other / Specialty Technology
- Technology: SiC
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET SiC Power MOSFET
- Features: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 1249743-SIC631CD-T1-GE3 Series: VRPower Packaging: Reel - TR Operating Temperature Range: -40°C ~ 150°C (TJ) Features: Bootstrap Circuit, Diode Emulation Package: PowerPAK MLP55-31L Applications: Synchronous Buck Converters Mounting: SMD Technology:
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 933778-SIC788ACD-T1-GE3 Series: VRPower® Operating Temperature Range: -40°C ~ 150°C (TJ) Features: Half Bridge Driver Synchronous Buck Converters Power MOSFET PowerPAK® MLP66-40 Package: PowerPAK® MLP66-40 Package: Reel - TR Mounting:
- Operating Temperature: -40 to 150 C
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: (optional) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Full bridge + series FRED and SiC parallel diodes VDSS (V): 1000 RDSon (mR) typ: 450 Current (A) Tc=80C: 14 Silicon type: MOSFET Package: SP4
- Output Voltage: 1,000 volts
- Output Current: 14 amps
- Configuration: Full Bridge
- Technology: MOSFET, SiC
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 933779-SIC789ACD-T1-GE3 Series: VRPower® Operating Temperature Range: -40°C ~ 150°C (TJ) Features: Half Bridge Driver Synchronous Buck Converters Power MOSFET PowerPAK® MLP66-40 Package: PowerPAK® MLP66-40 Package: Reel - TR Mounting:
- Operating Temperature: -40 to 150 C
- Features: Other
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Supplier: RS Components, Ltd.
Description: SiC Power MOSFET 1700V, 72A
- Number of Transistors in the Chip: 1
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
- Polarity: N-Channel
Find Suppliers by Category Top
Featured Products Top
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Microchip's SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules from Richardson RFPD feature phase leg topology ranking from 700 volts (V), 538A to 1200 volts (V), 394 amperes (A) to 754 A at a case temperature (Tc) of 80 degrees Celsius. Offering higher power density and a (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Wolfspeed has added a new family of 2300 V WolfPACKTM baseplate-less silicon carbide power modules which enable utility-scale grid-tied 1500 V inverters ranging from > 250 kW to 10 mW+. Utility-scale, grid-tied Inverters are more efficient and reliable with (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
, potentially, overcome the challenges initiating new designs in this supply chain environment. Features: - Full SiC Dual Boost - Low inductive package (flowE2, 12mm housing) - High Switching Frequency Download Datasheet here. (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Microchip's next-generation 1200V Silicon Carbide IC (SiC) diodes and 700V SiC MOSFETs with high avalanche/repetitive Unclamped Inductive Switching (UIS) 3-phase 380/400V RMS input voltage, 50 Hz or 60 Hz 140 kHz switching frequency 700V DC output voltage (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
end equipment comes a greater need for protection. E-Fuse, enabled by Microchip's 700V and 1200V Silicon Carbide (SiC) technology, provides a faster, more reliable method for protecting power electronic applications. E-Fuse solutions can detect and interrupt fault currents microseconds (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
Quasar200 and Pulsar600 Power Characterization Testers Wide bandgap (WBG) power devices such as SiC and GaN require a completely different approach to characterization than the previous generation (read more)
Browse Datasheets for Cosmic Equipment SpA -
create an advanced platform of AC solutions. Using a state-of-the-art SiC power switching architecture, they incorporate compactness, robustness, and functionality in a floor-standing chassis. The Sequoia Series is designed to refresh the MX and RS Series, while the Tahoe Series will refresh the BPS (read more)
Browse AC Power Sources Datasheets for AMETEK Programmable Power -
Nexperia announced the release of 1200 V silicon carbide (SiC) MOSFETs in QDPAK packaging, extending its growing wide-bandgap (WBG) portfolio with a top-side cooled surface-mount package optimized for high-power density and thermally demanding applications. Designed for high-efficiency, high (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Wolfspeed offers a family of 1200 V silicon carbide MOSFETs and Schottky diodes that are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high (read more)
Browse Diodes Datasheets for DigiKey
Conduct Research Top
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Wolfspeed SiC MOSFET-Based, Bidirectional, Three-Phase AC/DC Converters
This article demonstrates a design concept using commercially available SiC MOSFETs (C3M0065100K), which meets new market requirements for bidirectional functionality. A prototype 20-kW system in a simple two-level topology - switching at 48 kHz is shown. The prototype is tested to full power where
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SiC MOSFET-based Power Modules Utilizing Split Output Topology for Superior Dynamic Behavior
The body diode reverse recovery charge of a SiC MOSFET is lower than that of an Si MOSFET, but still not as beneficial; as with SiC Schottky diodes.
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Wolfspeed SiC MOSFETs Enable Improvements in Efficiency, Power Density and Cost for Three-Phase Industrial PFCs
The need for higher efficiency, greater power density, lower cost and bi-directionality pose design challenges when using silicon in traditional circuit approaches. An alternative utilizing SiC MOSFETs reduces switching losses and extends the usable switching frequency range of the two-level
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Cree's Wolfspeed Technology Moves Electric Vehicle Market to the Fast Lane with Newest 1,200 V SiC MOSFET
Wolfspeed, A Cree Company, announced a performance breakthrough in the ability to power the drivetrain of electric vehicles (EVs) using its new third generation 1,200 V SiC MOSFET family. This switching device, which enables high-voltage power conversion, solidifies the company's leadership
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What are MOSFETs? - Types and Features of High Voltage Super-Junction MOSFET
In the previous section, the product positioning of Si-MOSFETs, IGBTs and SiC-MOSFETs, which in recent years have become the most important power transistors, was reviewed, and super-junction MOSFETs (hereafter "SJ-MOSFETs"), which are representative of the latest high-voltage Si MOSFETs, were
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Application Benefits of using 4th Generation SiC MOSFETs
This article describes an experimental test using a step-down DC-DC converter with 500V input voltage and 7kW power, a simulated running test using an EV traction inverter with 800V input and 100kW, and an experimental test using a Totem-pole PFC circuit.
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New C3MTM 1200 V SiC MOSFET Increases Power Density and Efficiency in Solar Boost Converters
There is a growing need for high-efficiency power conversion (DC/DC) in a variety of industrial applications, including solar power generation. In solar power generation, the photovoltaic (PV) cells utilize the sun's energy to generate DC voltage in the range of 400 to 600 V DC. This DC needs
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Wolfspeed's New C3MTM 1200 V SiC MOSFET Increases Power Density and Efficiency in Solar Boost Converters
n solar power generation, the photovoltaic (PV) cells utilize the sun's energy to generate DC voltage in the range of 400 to 600 V DC. This DC needs to be boosted to approximately 850 V DC so that an inverter (DC/AC) can be utilized to generate 480 V AC to feed into the power grid
More Information Top
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Characterization of SiC Power Transistors for Power
Conversion Circuits Based on C-V Measurement
In present, SiC power transistors, especially SiC power MOSFETs and JFETs, are the most possible power switches for high switching frequency power conversion circuits due to fast turn-off capabil- ity.
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Advanced Power MOSFET Concepts
Although an inversion layer mobility of 165 cm2 /V-s has been observed in lateral MOSFET structures [4], the inversion layer mobility in high voltage 4H- SiC power MOSFET structure [5] is usually only 10–20 cm2 /V-s.
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SiC and GaN Semiconductors Report - World - 2013
Specific factors relating to the SiC MOSFET power device optimistic and conservative cases are discussed in more detail in the application sections of Chapter 4.
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Advanced High Voltage Power Device Concepts
The best transistor for this application has been determined to be the IGBT structure [26], although the 18 kV SiC power MOSFET is still a contender, in spite of its large on-resistance, due to its superior switching losses.
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SiC & GaN Power Semiconductors Report - 2014
Specific factors relating to the SiC MOSFET power device optimistic and conservative cases are discussed in more detail in the application sections of Chapter 4.
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2013 Combined Subject Index IEEE Industry Applications Society Publications
Cryogenic and high temperature performance of 4H- SiC power MOSFETs .
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Datasheet Driven Silicon Carbide Power MOSFET Model
Abstract—A compact model for SiC Power MOSFETs is pre- sented.
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10-kV SiC MOSFET-Based Boost Converter
Among them, a large effort has been devoted to the development of SiC power MOSFETs for high- voltage switching applications because of their much lower specific on-resistance when compared with silicon MOSFETs and their inherent fast-switching capability due to the…