Understanding Lasers

Chapter 9.11.5: InGaAs Pump Lasers

9.11.5 InGaAs Pump Lasers

Obtaining longer wavelengths from lasers in the GaAs family requires adding indium to replace some of the gallium and reduce the band gap. Fabricated on GaAs substrates, InGaAs lasers can generate high powers for pumping solid-state or fiber lasers. In- GaAs emitting at 915 nm is widely used as a pump for ytterbiumdoped fiber lasers. InGaAs emitting at 980 nm is widely used for pumping erbium-doped fiber amplifiers and erbium-fiber lasers. InGaAs emitting at 940 nm is used for pumping erbium-doped and erbium ytterbium codoped fiber lasers and amplifiers.

Adding indium to increase the wavelength of the laser also increases the lattice constant, requiring fabrication of thin strained layers between the GaAs substrate and the InGaAs layers to prevent dislocations in the laser structure.

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