TABLE OF CONTENTS The discussion of MOS devices in this book will be based on an understanding of a few basic concepts. These concepts have been collected in this chapter. We begin with an introduction to semiconductors and the evaluation of mobile carrier concentrations in them. We then consider the mechanisms of current transport in semiconductors. We continue with a discussion of contacts between different materials and the electrostatic potentials established in such contacts. One special contact, the pn junction, is then discussed. The material here is meant primarily as a review, but has been written in such a way that it can be understood even with no prior exposure to semiconductor electronics. It has thus been kept as simple as possible. A more advanced and detailed treatment can be found in several textbooks. [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12]
The chapter concludes with a brief overview of the MOS transistor and of the chapters that follow.
[1]R. B. Adler, A. C. Smith, and R. L. Longini, Introduction to Semiconductor Physics, SEEC Series, vol. 1, John Wiley, New York, 1964.
[2]P. E. Gray, D. DeWitt, A. R. Boothroyd, and J. F. Gibbons, Physical Electronics and Circuit Models of Transistors, SEEC Series, vol. 2, John Wiley, New York, 1964.
[3]P. E. Gray and C. L. Searle, Electronic Principles: Physics, Models, and Circuits, John Wiley, New York, 1969.
[4]A. S. Grove, Physics and Technology of Semiconductor Devices, John...
