TABLE OF CONTENTS When the small-signal voltages applied to an MOS transistor are varying fast, the small-signal terminal currents can be very different from those found using the circuit of Fig. 8.3. We now introduce a simple model that will predict such behavior as long as the frequency is not too high. The model achieves this by taking into account charge storage effects, assuming quasi-static operation. [1], [2], [5], [8], [13], [15], [16], [28], [29], [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] [73] [74] [75] [76] [77] [78] [79] [80] [81] [82] [83] [84] [85] [86] [87] [88] [89] [90] [91] [92] [93] [94] [95] [96] [97], [51]- [56] [57], [42], [44] Not all such effects are included; additional charge storage effects will be considered in Chap. 9. Nevertheless, the model we are about to introduce here is important in its own right, and we present it in a self-contained manner for two reasons:
It is widely in use, because it achieves a reasonable balance between accuracy and complexity. Some readers might find it adequate for their purposes, so it was felt that they should not have to be subjected to the general treatment of Chap. 9 before they encountered a useful model.
The material in this section will be a useful foundation for the general treatment in Chap. 9.
