TABLE OF CONTENTS The MOS transistor has been treated in previous chapters with the assumption that all terminal voltages are constant. However, the device is usually employed in circuits with varying terminal voltages. Such "dynamic" operation causes the transistor charges to vary, and the charge changes must be supplied from the outside world by extra currents flowing through the device terminals; here "extra" refers to currents not predicted by dc theory.
The subject of this chapter is the evaluation of charges and terminal currents under dynamic operation, without placing restrictions on the magnitude of the variations; i.e., we will deal with the large-signal dynamic operation of the MOS transistor. [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44] [45] [46] [47] [48] [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [ ] We will concentrate on the device part between source and drain, containing the inversion layer, the depletion region, the oxide, and gate. This part is shown enclosed in a broken line in Fig. 7.1. It is called the intrinsic part and is part mainly responsible for transistor action. The rest of the device constitutes the extrinsic part and is responsible for parasitic effects, which can...
