Operation and Modeling of the MOS Transistor

REFERENCES

  1. H. J. K. Ihantola and J. L. Moll, "Design theory of a surface field-effect transistor," Solid-State Electronics, vol. 7, pp. 423-430, June 1964.

  2. C. T. Sah, "Characteristics of the metal-oxide semiconductor transistors," IEEE Transactions on Electron Devices, vol. ED-11, pp. 324-345, July 1964.

  3. S. R. Hofstein and G. Warfield, "Carrier mobility and current saturation in the MOS transistor," IEEE Transactions on Electron Devices, vol. ED-12, pp. 129-138, March 1965.

  4. V. K. G. Reddi and C. T. Sah, "Source to drain resistance beyond pich-off in metal-oxide semiconductor transistors (MOST)," IEEE Transactions on Electron Devices, vol. ED-12, pp. 139-141, March 1965.

  5. M. H. White and R. C. Gallagher, "Metal oxide semiconductor (MOS) small-signal equivalent circuits," Proceedings of the IEEE, vol. 53, pp. 314-315, 1965.

  6. C. T. Sah and H. C. Pao, "The effects of fixed bulk charge on the characteristics of metal-oxide semiconductor transistors," IEEE Transactions on Electron Devices, vol. ED-13, pp. 393-409, April 1966.

  7. M. B. Das, "Charge-control analysis of M.O.S. and junction-gate field-effect transistors," IEE Proceedings, vol. 113, pp. 1565-1570, October 1966.

  8. F. A. Lindholm, R. J. Balda, and J. L. Clements, "Characterization of the four-terminal MOS transistor for digital and linear applications," Digest of Technical Papers, International Electronics Conference, Toronto, pp. 116-117, 1967.

  9. M. B. Das, "Dependence of the characteristics of MOS transistors on the substrate resistivity," Solid-State Electronics, vol. 11, pp. 305-322, March 1968.

  10. J. E. Schroeder and R. S. Muller, "IGFET analysis through numerical solution of Poisson's...

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