RF Diodes Specifications

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General Specifications

	Configuration
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	Single		Only one diode is built in the chip.
	Array		Diode arrays are composed of multiple discrete (usually unconnected) diodes on a single silicon chip.
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	Diode Type
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	General Purpose (PN Junction Diodes)		PN junction diodes are used for general-purpose applications. They are also known as PN diodes, PN junctions, and small-signal diodes.
	Schottky Barrier Diodes		Schottky diodes, in their simplest form, consist of a metal layer that contacts a semiconducting element. This metal/semiconductor junction exhibits rectifying behavior (i.e., the current passes through the structure more readily with one polarity than the other). Schottky diodes are used primarily in high frequency and fast-switching applications. Because they operate only with majority carriers, there is no reverse leakage current as with other types of diodes.  With Schottky diodes, the metal region is heavily occupied with conduction-band electrons. The N-type semiconductor region is lightly doped. When forward-biased, the higher energy electrons in the N-region are injected into the metal region, where they give up their excess energy very rapidly. Since there are no minority carriers (as with conventional rectifier diodes), there is a very rapid response to a change in bias. For this reason, Schottky diodes are used in high-frequency applications and in many digital circuits to decrease switching times. Schottky diodes are also known as hot-carrier diodes.
	PIN Diodes		PIN diodes are three-layer semiconductor diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer, in conjunction with other diode parameters, determines the resistance of the diode at RF and microwave frequencies. Typically, this resistance ranges from kilohms to less than 1 ohm for a given diode. PIN diodes are often used as switches or attenuator elements.
	Varactor Diodes		Varactor diodes are P-N junction diodes that act as voltage-controlled capacitors when operated under reverse bias. P-N junctions have inherent capacitance. When the junction is reverse biased, increasing the applied voltage causes the depletion region to widen, thus increasing the effective distance between the two "plates" of the capacitor and decreasing the effective capacitance. By adjusting the doping gradient and junction width, the capacitance range can be controlled, and the way-capacitance changes with the applied reverse voltage. A four-to-one capacitance range is not problematic. In fact, a typical varactor diode (sometimes called a "varicap diode") can vary from 60 picofarads (pf) at zero-bias down to 15 pf at 20 volts (V). Precision manufacturing can achieve a capacitance range of up to ten-to-one. Typically, varactor diodes are used in electronic tuning systems to eliminate the use of and need for moving parts.
	Step-recovery Diodes		Step-recovery diodes or snap-off diodes use graded doping where the doping level of the semiconductive materials is reduced as the PN junction is approached. This produces an abrupt turn-off time by allowing a very fast release of stored charge when switching from forward to reverse bias. It also allows a rapid re-establishment of forward current when switching from reverse to forward bias. Step-recover diodes are used in very high frequency (VHF) and fast-switching applications.
	Tunnel Diodes		Tunnel diodes are heavily doped P-N diodes in which electron tunneling from the conduction band in the N-type material to the valence band in the P-type region produces a region of negative resistance. The most important region of operation for tunnel diodes is this negative resistance region where, as the voltage is increased, the current decreases. This feature makes tunnel diodes very useful in oscillators and RF applications.
	Gunn Diodes		Gunn diodes or transfer electron devices (TED) exhibit a negative resistance region. They are used in high-frequency applications, often for building RF oscillators.
	IMPATT Diodes		Impact ionization avalanche transit-time (IMPATT) diodes are designed to operate at very high frequency and power. They are used as elements in RF and microwave devices.
	Other		Other unlisted or proprietary diode types.
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	Diode Applications
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	Detector		Diodes are used in detector applications.
	Mixer		Diodes are used in mixers.
	Damper		Damper diodes are designed for use in television sets. They are often found in the circuit used for the horizontal deflection of a cathode ray tube (CRT) monitor.
	Limiter		Diodes can be used as voltage limiters or in voltage limiter circuits.
	Switching		Diodes can be used in high-speed switching applications.
	Modulation		Diodes can be used in modulation systems, such as in AM or FM modulators.
	Amplification		Diodes are used in amplifier circuits.
	Other		Other unlisted or specialized diode applications.
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	Life Cycle Stage		This is the current product lifecycle stage, as defined by EIA-724.
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	Introduction		Product planning or design is underway. Samples may or may not exist. Specification changes may occur and planned introduction dates may be delayed. Orders and product shipments are not permitted. This stage is not part of the EIA-724 product life cycle data model.
	New Product		Production is beginning to ramp up. Limited quantities are available. Orders and shipments are permitted. This stage is part of the EIA-724 product life cycle data model.
	Rapid Growth		Production is increasing rapidly. Manufacturing capacity is being added. Orders and shipments are permitted. This stage is part of the EIA-724 product life cycle data model.
	Maturity		Product growth has stabilized or peaked. Product quality is very high. Orders and shipments are permitted. Product is recommended for use in new designs. This stage is part of the EIA-724 product life cycle data model.
	Saturation		Sales and capacity have peaked. Orders and shipments are permitted. This stage is part of the EIA-724 product life cycle data model.
	Not Recommended (Declining)		Capacity is beginning to decline. Orders and shipments are permitted, but devices are not recommended for new designs. This stage is part of the EIA-724 product life cycle data model.
	Phase Out		Capacity is declining rapidly. A formal discontinuance notice may be issued. Limitations on shipments can occur, but orders are still allowed. Devices are not considered for new designs. This stage is part of the EIA-724 product life cycle data model.
	Last Shipments		Final shipments are made for existing orders. New orders are limited to existing or residual inventories. Manufacturing capacity limitations may exist. This stage is not part of the EIA-724 product life cycle data model.
	Removed		Devices are unavailable. Product inventories and all supporting hardware, software, and documentation have been removed. New orders and new shipments are not permitted. This stage is not part of the EIA-724 product life cycle data model.
	Other		Other unlisted life cycle stages.
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RoHS Compliance

	RoHS Compliant		Restriction of Hazardous Substances (RoHS) is a European Union (EU) directive that requires all manufacturers of electronic and electrical equipment sold in Europe to demonstrate that their products contain only minimal levels of the following hazardous substances: lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyl, and polybrominated diphenyl ether. RoHS will become effective on July 1, 2006.
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Performance

	VF		VF is the forward voltage at specified forward current input. It is also defined as the voltage across the diode terminals that results from the flow of current in the forward direction.
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	IF		IF is the current value when the specified forward voltage (VF) is applied. It is also defined as the current flowing through the diode in the direction of lower resistance.
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	VR		VR is the maximum allowable reverse voltage that can be applied repeatedly.
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	IR		Reverse current (IR) is the current value when the specified reverse voltage is applied. It is the current that flows when reverse bias is applied to a semiconductor junction. Reverse current is also known as leakage current.
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	VRRM		Repetitive peak reverse voltage or maximum reverse voltage (VRRM) is the maximum allowable instantaneous value of reverse voltage repeatedly applicable.
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	IFSM		Peak forward surge current (IFSM) is the maximum allowable surge value of forward current without repetition.
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	PD		This is the maximum permissible power dissipation (PD) per output (in W) of the diode at specified ambient temperature.  Power dissipation is the power dissipated by the diode while in the ON state.
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	Operating Frequency		The range of frequencies over which the diode is designed to operate.
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	CT		CT is the terminal capacitance when the specified reverse voltage and frequency are applied. It is also known as diode capacitance (CD).
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	Tj		Junction operating temperature (Tj) is the range of temperatures over which the diode is designed to operate.
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Packaging

	Package Type
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	DO-4		DO-4 is a diode outline (DO) package.
	DO-5		DO-5 is a diode outline (DO) package.
	DO-8		DO-8 is a diode outline (DO) package.
	DO-9		DO-9 is a diode outline (DO) package.
	DO-15		DO-15 is a diode outline (DO) package.
	DO-27		DO-27 is a diode outline (DO) package.
	DO-34		DO-34 is a diode outline (DO) package.
	DO-35		DO-35 is a diode outline (DO) package.
	DO-41		DO-41 is a diode outline (DO) package.
	DO-201		DO-201 is a diode outline (DO) package.
	DPAK		Discrete package or deca-watt (DPAK).
	D2PAK		D2PAK is large surface mounted package that include a heat sink.
	MELF		Metal electrode leadless face (MELF) component diodes have metallized terminals at each end of a cylindrical body. MELF components are designed to fit the same footprints as flat components. MELF packages are available on plastic tape and reel.
	QuadroMELF		QuadroMELF diodes have a square cross section to provide better on board stability and greater "pick and place" accuracy.
	MicroMELF		MicroMELF is the smallest version of MELF.
	MiniMELF		MiniMELF is a miniature version of MELF.
	POWERMITE® 3		Powermite®3 is a compact, high power density surface mount rectifier package that offers low thermal resistance. Powermite®3 is a registered trademark of Diodes, Inc.
	SC-59		SC-59 is a plastic surface mounted package with three leads.
	SC-74		SC-74 is a plastic surface mounted package with three leads.
	SC-76		SC-76 is a plastic surface mounted package with three leads.
	SMA		Subminiature-A (SMA) connectors are intended for use on semi-rigid cables in components. They directly interface the cable dielectric without air gaps. They are not intended for permanent connections.
	SMB		Subminiature-N (SMB) connectors are snap-mount connectors that are available either in 50Ù or 75Ù impedances. They are used for frequencies from DC to 4GHz.
	SOD-80		SOD-80 is a plastic, surface mounted, small outline diode (SOD) package with two leads.
	SOD-106		SOD-106 is a small outline diode (SOD) package.
	SOD-123		SOD-123 is a small outline diode (SOD) package.
	SOD-323		SOD-323 is a small outline diode (SOD) package.
	SOD-523		SOD-523 is a small outline diode (SOD) package.
	SOT23		SOT23 is a surface mounted, small outline transistor (SOT) package with three leads.
	SOT26		SOT26 is a surface mounted, small outline transistor (SOT) package.
	SOT89		SOT89 is a plastic, surface mounted, small outline transistor (SOT) package with three leads and a collector pad for good heat transfer. Unlike other packages, SOT89 lead posts are up-set and not down-set. SOT89 is designed for medium power and high-speed switching applications. It is also used in applications that feature very low RDS (on), no secondary breakdown, and direct interface to complementary metal oxide semiconductor (CMOS) and transistor-transistor logic (TTL).
	SOT143		SOT143 is a plastic, surface mounted, small outline transistor (SOT) package with four leads.
	SOT223		SOT223 is a plastic, surface mounted, small outline transistor (SOT) package with four leads and a heat sink. During soldering, the formed leads absorb thermal stress and eliminate the possibility of damage to the die. The encapsulation material enhances device reliability, allowing SOT223 to provide excellent performance in environments with high temperatures and humidity levels. SOT223 provides power dissipation of 1W ~ 1.5W.
	SOT323		SOT323 is a plastic, surface mounted, small outline transistor (SOT) package with three leads.
	SOT343		SOT343 is a surface mounted, small outline transistor (SOT) package.
	SOT346		SOT346 is a surface mounted, small outline transistor (SOT) package.
	SOT353		SOT353 is a surface mounted, small outline transistor (SOT) package.
	SOT363		SOT363 is a surface mounted, small outline transistor (SOT) package.
	SOT416		SOT416 is a surface mounted, small outline transistor (SOT) package.
	SOT457		SOT457 is a surface mounted, small outline transistor (SOT) package.
	SOT523		SOT523 is a surface mounted, small outline transistor (SOT) package.
	TO-3		TO-3 is a transistor outline (TO) package.
	TO-66		TO-66 is a transistor outline (TO) package.
	TO-92		TO-92 is a single in-line, transistor outline (TO) package that is often used for low power devices. One of the oldest power packages, TO-92 is suitable for applications in office and communication equipment.
	TO-202		TO-202 is a transistor outline (TO) package.
	TO-220		TO-220 is a transistor outline (TO) package that is suitable for high power, medium current, and fast-switching power devices. TO-220 is used in home appliances, office and industrial equipment, and personal and consumer electronics. A package variant, TO-220 Full Pack, includes a fully encapsulated heat sink that does not require extra hardware for electrical isolation. TO-220 Full Pack has the same footprint as TO-220, provides electrical isolation up to 5 KV, and is often used in motor drive applications and power supplies.
	TO-237		TO-237 is a transistor outline (TO) package.
	TO-247		TO-247 is a transistor outline (TO) package.
	Other		Other unlisted or proprietary diode packages.
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	Pin Count		The number of physical connection points (e.g., pins, pads, balls) on the package.
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	Number of Diodes in Package		The number of diodes embedded in the chip (package).
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