Plasma Etching / Cleaning Thin Film Equipment
Description
Plasma etching and cleaning thin film equipment is designed to remove layers of material from a substrate or wafer. This equipment utilizes plasma to effectively clean surfaces by breaking down and removing impurities and contaminants. The process involves the use of energetic plasma created from gaseous species, which can include gases like argon or oxygen.
Working Principle
Plasma etching and cleaning work by generating a plasma field within a chamber, where the substrate is placed. The process gas, such as oxygen or argon, is introduced into the chamber, and an electric field accelerates electrons, which then collide with gas molecules. These collisions create ions and other reactive species that interact with the surface of the substrate. This interaction breaks molecular bonds at the surface, effectively removing contaminants and modifying the surface to be more chemically reactive. This process is particularly useful for enhancing the adhesion of paints, coatings, and adhesives by creating reactive sites on the surface.
Applications
Plasma etching and cleaning equipment is widely used in semiconductor fabrication, particularly in the production of integrated circuits or chips. It is also employed in the cleaning of materials such as metals, plastics, glasses, and ceramics, where it removes organic layers and reduces oxides. Additionally, plasma etching is used to treat fluoropolymer-based materials like Teflon® (PTFE) to increase adhesion forces, and it is effective in removing epoxy bleed out after die attach, prior to wire bonding.
Advantages over other Thin Film Equipment
Plasma etching and cleaning offer several advantages over other thin film equipment. For instance, it can treat low-energy polymers, transforming their surfaces into something bondable without altering the bulk properties of the material. This capability is particularly beneficial for materials like thermoplastics and fluoropolymers, which are common in the medical device industry. Additionally, plasma cleaning can achieve high precision in surface modification, which is crucial for applications requiring exacting standards.
Limitations
One limitation of plasma etching and cleaning is that it may not be effective for surfaces with more than a few molecular layers of contamination. In such cases, pre-cleaning with detergents or solvents may be necessary. Additionally, over-treatment can volatilize the surface, causing irreversible damage. Therefore, understanding the surface condition before and after treatment is essential to avoid such issues.
Considerations
When considering plasma etching and cleaning equipment, it is important to evaluate initial costs, operating expenses, and maintenance requirements. The equipment's durability and accuracy are also critical factors, as they can impact the long-term cost-effectiveness of the process. Replacement and maintenance costs should be factored into the overall budget, as these can vary depending on the specific equipment and its usage.
from Plasma Etch, Inc.
The all aluminum chamber features over 240 square inches of active processing surface with the three level standard configuration. The clean design features an industrial powder coated frame to guard your processing environment from contamination. [See More]
- Process: Plasma Etching and Cleaning
- Applications: Research / Surface Analysis; Printed Circuit Boards
- Type: Laboratory or Benchtop
- Materials Processed: Tungsten; Metal; Gallium Arsenide or Compound Semiconductors; Precious Metals
from Plasma Etch, Inc.
As in all Plasma Etch systems a capacitive parallel plate design is used for the most effective plasma generation. Competitive units with glass/quartz barrel chambers cannot penetrate the vacuum containment vessel and therefore are restricted to inductive coupling using an RF coil wrapped around the... [See More]
- Process: Plasma Etching and Cleaning
- Applications: MEMS; Photovoltaic or solar cell; Research / Surface Analysis; Semiconductors; Medical; Printed Circuit Boards
- Type: Laboratory or Benchtop
- Materials Processed: Tungsten; Metal; Gallium Arsenide or Compound Semiconductors; Precious Metals
from Plasma Etch, Inc.
Our welded aluminum vacuum chamber encloses a generous 500 square inches of active plasma processing surface. Surface modification with Plasma Etch yields increased bond strength and cleanliness of most any surface material. [See More]
- Process: Plasma Etching and Cleaning
- Applications: Research / Surface Analysis; Printed Circuit Boards
- Type: Laboratory or Benchtop
- Materials Processed: Tungsten; Metal; Gallium Arsenide or Compound Semiconductors; Precious Metals
from Plasma Etch, Inc.
This system is made for smaller production facilities, R &D facilities and universities. The system features an implosion proof 6 ” w x 6 ” d x 4 ” h Rectangular welded Aluminum Vacuum Chamber and a direct powered RF electrode. Applications include medical devices, solar cells,... [See More]
- Process: Plasma Etching and Cleaning
- Applications: MEMS; Photovoltaic or solar cell; Research / Surface Analysis; Semiconductors; Medical; Printed Circuit Boards
- Type: Laboratory or Benchtop
- Materials Processed: Tungsten; Metal; Gallium Arsenide or Compound Semiconductors; Precious Metals
from Plasma Etch, Inc.
This system is made for smaller production facilities, R &D facilities and universities. The system features an implosion proof 8 ” w x 8 ” d x 4 ” h Rectangular welded Aluminum Vacuum Chamber and a direct powered RF electrode. Applications include medical devices, solar cells,... [See More]
- Process: Plasma Etching and Cleaning
- Applications: MEMS; Photovoltaic or solar cell; Research / Surface Analysis; Semiconductors; Medical; Printed Circuit Boards
- Type: Laboratory or Benchtop
- Materials Processed: Tungsten; Metal; Gallium Arsenide or Compound Semiconductors; Precious Metals
from Plasma Etch, Inc.
The generous aluminum chambers accommodates a properly sized active processing surface with our standard configurations having dual bays as few as 6 or as many as 24 plasma processing levels, each 24 ” by 18. ”. Our oxygen service vacuum pump and booster is equipped with a two point... [See More]
- Process: Plasma Etching and Cleaning
- Applications: Research / Surface Analysis; Printed Circuit Boards
- Type: Free Standing System
- Materials Processed: Tungsten; Metal; Gallium Arsenide or Compound Semiconductors; Precious Metals
from Plasma Etch, Inc.
The generous aluminum chamber accommodates a properly sized active processing surface with our standard configurations having as few as 6 or as many as 24 plasma processing levels, each 24 ” by 18. ”. Our oxygen service vacuum pump and booster is equipped with a two point purge system to... [See More]
- Process: Plasma Etching and Cleaning
- Applications: Research / Surface Analysis; Printed Circuit Boards
- Type: Free Standing System
- Materials Processed: Tungsten; Metal; Gallium Arsenide or Compound Semiconductors; Precious Metals
from Plasma Etch, Inc.
Benefits to you are better adhesion or marking, cleaner parts with less labor and reduced chemical expense by eliminating unwelcome and often expensive chemical waste associated with cleaning and priming. The large all aluminum chamber accommodates a generously sized active processing surface, our... [See More]
- Process: Plasma Etching and Cleaning
- Applications: Research / Surface Analysis; Printed Circuit Boards
- Type: Free Standing System
- Materials Processed: Tungsten; Metal; Gallium Arsenide or Compound Semiconductors; Precious Metals
from Plasma Etch, Inc.
Built as an extension of our MK-II platform, it offers you the same repeatability, reliability and long life, as well as low maintenance costs. The Reactive Ion Etch (RIE) electrode offers the highest directional plasma effect. Etching with our roll to roll plasma etcher in the large all aluminum... [See More]
- Process: Plasma Etching and Cleaning
- Materials Processed: Tungsten; Metal; Gallium Arsenide or Compound Semiconductors; Precious Metals
- Applications: Research / Surface Analysis; Printed Circuit Boards
- Vacuum / Pressure Range: Low / Medium (HV < 1 torr, >10-3 torr); 0-10 Torr
from Plasma Etch, Inc.
Based on our popular BT-1, it shares the same robust and reliable characteristics while providing yet another example of Plasma Etch surface modification innovation. The large all aluminum chamber accommodates a generously sized circular, rotating active processing surface has the option of... [See More]
- Process: Plasma Etching and Cleaning
- Applications: Research / Surface Analysis; Printed Circuit Boards
- Type: Free Standing System
- Materials Processed: Tungsten; Metal; Gallium Arsenide or Compound Semiconductors; Precious Metals