Bulk Pack Metal-Oxide Semiconductor FET (MOSFET)

Small Signal Field-Effect Transistor, N-Channel, MOSFET, TO-92 [See More]

• Packing Method: Bulk; Bulk
• Package Type: TO-92; TO-92

• Polarity: N-Channel

Manufacturer: AMIS. Category: Connectors,Interconnects. Packaging: Bulk. Part Status: Obsolete [See More]

• Packing Method: Bulk; Bulk

• Package Type: SOT3

P-Channel Power MOSFET, 60V, 10A [See More]

• Packing Method: Bulk; Bulk
• Package Type: TO-251AB-3

• Polarity: P-Channel

Manufacturer: AMIS. Category: Connectors,Interconnects. Packaging: Bulk. Part Status: Obsolete. Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V. Vgs(th) (Max) @ Id: 3V @ 77 µA. Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V. Input Capacitance (Ciss) (Max) @... [See More]

• Packing Method: Bulk; Bulk
• Package Type: SOT3

• P_D: 100000

Power Field-Effect Transistor, 2A, 600V, 4.4, N-Channel MOSFET [See More]

• Packing Method: Bulk; Bulk
• Package Type: FULLPAK220

• Polarity: N-Channel

Mfr: Freescale Semiconductor. Category: Connectors,Interconnects. Packaging: Bulk. Part Status: Obsolete. FET Type: P-Channel. Technology: Schottky. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On... [See More]

• Packing Method: Bulk; Bulk
• Package Type: SOT3

• Polarity: P-Channel

Power MOSFETs for Automotive [See More]

• Packing Method: Bulk; Bulk

• Package Type: MP-33

Mfr: TE Connectivity Aerospace, Defense and Marine. Category: Connectors,Interconnects. Packaging: Bulk. Part Status: Obsolete. FET Type: N and P-Channel. Technology: Wirewound. Drain to Source Voltage (Vdss): 60V, 50V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds... [See More]

• Packing Method: Bulk; Bulk
• Package Type: SOT3

• Polarity: P-Channel

Power Field-Effect Transistor, N-Channel MOSFET [See More]

• Packing Method: Bulk; Bulk
• Package Type: IPAK-3

• Polarity: N-Channel

Manufacturer: AMIS. Category: Connectors,Interconnects. Packaging: Bulk. Part Status: Obsolete. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V. Vgs(th) (Max) @ Id:... [See More]

• Packing Method: Bulk; Bulk

• Package Type: SOT3

N-Channel Silicon MOSFET General-Purpose Switching Device Application [See More]

• Packing Method: Bulk; Bulk
• Package Type: TO-220; TO-220-3

• Polarity: N-Channel

Manufacturer: Fairchild Semiconductor. Win Source Part Number: 1325357-FDME1023PZT. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Packaging: Bulk. Standard Package: 1. Mounting: Surface Mount. FET Type: 2 P-Channel (Dual). FET Feature: Logic Level Gate. Drain to... [See More]

• Packing Method: Bulk; Bulk
• T_J: -55 to 150

• Polarity: P-Channel
• Package Type: SOT3; 6-UFDFN Exposed Pad

N-Channel Silicon MOSFET [See More]

• Packing Method: Bulk; Bulk
• Package Type: SIP3

• Polarity: N-Channel

Manufacturer: Vishay. Win Source Part Number: 064639-SIHG22N60S-E3. Category: Discrete Semiconductor Products. Family: FETs - Single. Packaging: Bulk. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-247-3. Manufacturer Device Package: TO-247AC. [See More]

• Packing Method: Bulk; Bulk
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: TO-247; SOT3

650V and 700V CoolMOS N-Channel Power MOSFET [See More]

• Packing Method: Bulk; Bulk
• Package Type: TO-251-3

• Polarity: N-Channel

Manufacturer: Fairchild Semiconductor. Win Source Part Number: 094965-BS170. Category: Discrete Semiconductor Products. Family: FETs - Single. Packaging: Bulk. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-226-3 TO-92-3 (TO-226AA). [See More]

• Packing Method: Bulk; Bulk
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: TO-92; SOT3

Manufacturer: SANYO Semiconductor (U.S.A) Corporation. Win Source Part Number: 197601-2SK3702. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Packaging: Bulk. Mounting Style: Through Hole. Operating Temperature Range: 150 °C (TJ). Package: TO-220-3 Full... [See More]

• Packing Method: Bulk; Bulk
• T_J: 150

• Polarity: N-Channel
• Package Type: TO-220; SOT3

Manufacturer: SANYO Semiconductor (U.S.A) Corporation. Win Source Part Number: 205803-K4096LS. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Packaging: Bulk. Mounting Style: Through Hole. Operating Temperature Range: 150 °C (TJ). Package: TO-220-3 Full... [See More]

• Packing Method: Bulk; Bulk
• T_J: 150

• Polarity: N-Channel
• Package Type: TO-220; SOT3

Manufacturer: SANYO Semiconductor (U.S.A) Corporation. Win Source Part Number: 205804-K4097. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Packaging: Bulk. Mounting Style: Through Hole. Operating Temperature Range: 150 °C (TJ). Package: TO-220-3 Full... [See More]

• Packing Method: Bulk; Bulk
• T_J: 150

• Polarity: N-Channel
• Package Type: TO-220; SOT3

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 078107-AO4842L. Packaging: Bulk. Mounting Style: SMD. FET Feature: Logic Level Gate. Transistor Polarity: 2 N-Channel (Dual). Family Name: AO4842. Categories: Discrete Semiconductor Products. Supplier Device Package: 8-SO. [See More]

• Packing Method: Bulk; Bulk
• V_(BR)DSS: 30

• Polarity: N-Channel; 2 N-Channel (Dual)
• T_J: -55 to 150

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 803951-AON7812. Packaging: Bulk. Mounting Style: SMD. FET Type: 2 N-Channel (Dual) Asymmetrical. FET Feature: Standard. Drain to Source Voltage (Vdss): 30V. Power - Max: 4.1W. Part Status: Obsolete (End Of Life). Supplier... [See More]

• Packing Method: Bulk; Bulk
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: SOT3

Manufacturer: Sanken. Win Source Part Number: 814394-SLA5061. Packaging: Bulk. Mounting Style: Through Hole. FET Type: 3 N and 3 P-Channel (3-Phase Bridge). FET Feature: Logic Level Gate. Drain to Source Voltage (Vdss): 60V. Power - Max: 5W. Supplier Device Package: 12-SIP w/fin. Temperature Range -... [See More]

• Packing Method: Bulk; Bulk
• T_J: 150

• Polarity: P-Channel
• Package Type: SOT3

Manufacturer: Microsemi Corporation. Win Source Part Number: 1124189-2N6756. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-204AA. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Bulk; Bulk
• V_(BR)DSS: 100

• Polarity: N-Channel; N-Channel
• P_D: 4000 to 75000

Manufacturer: Microsemi Corporation. Win Source Part Number: 1124190-2N6762. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-204AA. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Bulk; Bulk
• V_(BR)DSS: 500

• Polarity: N-Channel; N-Channel
• P_D: 4000 to 75000

Manufacturer: Microsemi Corporation. Win Source Part Number: 1124191-2N6766. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Bulk; Bulk
• V_(BR)DSS: 200

• Polarity: N-Channel; N-Channel
• P_D: 4000 to 150000

Manufacturer: Microsemi Corporation. Win Source Part Number: 1124192-2N6768. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Bulk; Bulk
• V_(BR)DSS: 400

• Polarity: N-Channel; N-Channel
• P_D: 4000 to 150000

Manufacturer: Microsemi Corporation. Win Source Part Number: 1124194-2N6770. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Bulk; Bulk
• V_(BR)DSS: 500

• Polarity: N-Channel; N-Channel
• P_D: 4000 to 150000

Manufacturer: Microsemi Corporation. Win Source Part Number: 1124195-2N6782. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-39. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Bulk; Bulk
• V_(BR)DSS: 100

• Polarity: N-Channel; N-Channel
• P_D: 800 to 15000

Manufacturer: Microsemi Corporation. Win Source Part Number: 1124196-2N6784. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-39. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Bulk; Bulk
• V_(BR)DSS: 200

• Polarity: N-Channel; N-Channel
• P_D: 800 to 15000

Manufacturer: Microsemi Corporation. Win Source Part Number: 1124198-2N6788. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-39. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Bulk; Bulk
• V_(BR)DSS: 100

• Polarity: N-Channel; N-Channel
• P_D: 800

Manufacturer: Microsemi Corporation. Win Source Part Number: 1124199-2N6790. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-39. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Bulk; Bulk
• V_(BR)DSS: 200

• Polarity: N-Channel; N-Channel
• P_D: 800

Manufacturer: Microsemi Corporation. Win Source Part Number: 1124201-2N6796. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-39. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Bulk; Bulk
• V_(BR)DSS: 100

• Polarity: N-Channel; N-Channel
• P_D: 800 to 25000

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Bulk; Bulk

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Bulk
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 8000

MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market. [See More]

• Packing Method: Bulk
• V_(BR)DSS: 500

• Polarity: N-Channel
• I_DSS: 5000

IC DRIVER MOSFET DUAL HS 8-SOIC [See More]

• Packing Method: Bulk; Bulk
• T_J: -40 to 85

• P_D: 570

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Bulk; Chassis Mount

• T_J: -40 to 150

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Bulk; Surface Mount

• T_J: -55 to 150

MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market. [See More]

• Packing Method: Bulk
• V_(BR)DSS: 500

• Polarity: N-Channel
• I_DSS: 9000

IC DRIVER MOSFET QUAD 14-SOIC [See More]

• Packing Method: Bulk; Bulk

• T_J: 0.0 to 85

RF MOSFET HEMT 50V 55-KR [See More]

• Packing Method: Bulk; Bulk

• Package Type: Surface Mount

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Bulk; Surface Mount

• T_J: -55 to 150

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Bulk
• V_(BR)DSS: 600

• Polarity: N-Channel
• I_DSS: 15000

IC MOSFET DRVR SYNC BUCK 10-DFN [See More]

• Packing Method: Bulk; Bulk

• T_J: 0.0 to 85

5.5A, 400V, 1OHM, N-CHANNEL [See More]

• Packing Method: Bulk; Bulk
• I_DSS: 5500

• V_(BR)DSS: 400
• Package Type: 800 pF @ 25 V

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Bulk; Bulk

Microchip VN2222LL-G N-channel MOSFET Transistor; 0.23 A; 60 V; 3-Pin TO-92 [See More]

• Packing Method: Bulk; Bulk
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

DIODE [See More]

• Packing Method: Bulk; Bulk
• I_DSS: 0.1700

• V_(BR)DSS: 60
• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Bulk; Bulk

MOSFET 2N-CH 1200V 120A MODULE [See More]

• Packing Method: Bulk; Bulk
• P_D: 780000

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• T_J: -40 to 150

MOSFET 2N-CH 60V 0.115A SOT23-6L [See More]

• Packing Method: Bulk; Bulk
• I_DSS: 115

• V_(BR)DSS: 60

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Bulk; Bulk

MOSFET 2N-CH 1200V 404A MODULE [See More]

• Packing Method: Bulk; Bulk
• P_D: 1.66E6

• r_DS(on): 0.0050
• T_J: 150

Interface [See More]

• Packing Method: Bulk; Bulk
• I_DSS: 340

• V_(BR)DSS: 60
• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Bulk; Bulk

MOSFET 3N/3P-CH 60V 10A/6A 12SIP [See More]

• Packing Method: Bulk; Bulk
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

MOSFET 2N-CH 60V 0.32A 6TSSOP [See More]

• Packing Method: Bulk; Bulk
• I_DSS: 320

• V_(BR)DSS: 60

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Bulk; Bulk

MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS [See More]

• Packing Method: Bulk; Bulk
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 600

DIODE [See More]

• Packing Method: Bulk; Bulk
• I_DSS: 0.1150

• V_(BR)DSS: 60
• Package Type: SOT323; SC-70, SOT-323

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Bulk; Bulk

MOSFET DRVR 2.5A 4-OUT Hi/Lo Side Full Brdg/Half Brdg Inv/Non-Inv 20-Pin SOIC W T/R [See More]

• Packing Method: Bulk; Bulk

• T_J: -40 to 85

POWER MOSFET [See More]

• Packing Method: Bulk; Bulk

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Bulk; Bulk

MOSFET N-CH 100V MP-25/TO-220 [See More]

• Packing Method: Bulk; Bulk
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• P_D: 1500

P-CHANNEL POWER MOSFET [See More]

• Packing Method: Bulk; Bulk

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Bulk; Through Hole

• T_J: 150

MOSFET N-CH 150V 78A TO-247AC [See More]

• Packing Method: Bulk; Bulk
• P_D: 310000

• V_(BR)DSS: 150
• T_J: -40 to 175

MOSFET P-CH 60V 10A [See More]

• Packing Method: Bulk; Bulk

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Bulk; Bulk

MOSFET N-CH 200V 45A TO220 [See More]

• Packing Method: Bulk; Bulk
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 200

MOSFET P-CH TO220NIS [See More]

• Packing Method: Bulk; Bulk
• Package Type: TO-220; TO-220-3 Full Pack

• I_DSS: 5000

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Bulk; Bulk

MOSFET N-CH 200V TO-220F [See More]

• Packing Method: Bulk; Bulk
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 200

SMALL SIGNAL P-CHANNEL MOSFET [See More]

• Packing Method: Bulk; Bulk

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Bulk; Bulk

MOSFET N-CH 30V 17A TO252 [See More]

• Packing Method: Bulk; Bulk
• T_J: -55 to 175

• P_D: 32000

P-CHANNEL SWITCHING POWER MOSFET [See More]

• Packing Method: Bulk; Bulk
• I_DSS: 83000

• V_(BR)DSS: 60
• Package Type: Surface Mount

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Bulk; Bulk

MOSFET N-CH 50V 1.5MA TO-206AA [See More]

• Packing Method: Bulk; Bulk
• r_DS(on): 1700

• V_GS(off): 0.6000
• P_D: 300

MOSFET P-CH 100V 27A TO263-2 [See More]

• Packing Method: Bulk; Bulk
• I_DSS: 27000

• V_(BR)DSS: 100
• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Bulk; Bulk

MOSFET N-CH 50V 600UA TO-206AA [See More]

• Packing Method: Bulk; Bulk
• r_DS(on): 2500

• V_GS(off): 0.3000
• P_D: 300

N-CHANNEL POWER MOSFET [See More]

• Packing Method: Bulk; Bulk

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Bulk; Bulk

MOSFET N-CH 600V 1.5A TP [See More]

• Packing Method: Bulk; Bulk
• T_J: 150

• P_D: 1000
• Number of units in IC: 1

N-CHANNEL POWER MOSFET [See More]

• Packing Method: Bulk; Bulk

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Bulk; Bulk

MOSFET N-CH 600V 15A DPAK [See More]

• Packing Method: Bulk; Bulk
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 600

N-CHANNEL POWER MOSFET [See More]

• Packing Method: Bulk; Bulk

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Bulk; Surface Mount

• T_J: -55 to 150

MOSFET N-CH 60V 10A TO-220FN [See More]

• Packing Method: Bulk; Bulk
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• r_DS(on): 0.1400

SMALL SIGNAL N-CHANNEL MOSFET [See More]

• Packing Method: Bulk; Bulk

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Bulk; Surface Mount

• T_J: -55 to 175

MOSFET N-CH 60V 60A TO-220 [See More]

• Packing Method: Bulk; Bulk
• T_J: 150

• P_D: 1750

N-CHANNEL POWER MOSFET [See More]

• Packing Method: Bulk; Bulk

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Bulk; Surface Mount

• T_J: -55 to 150

MOSFET N-CHAN 800V TO-252 [See More]

• Packing Method: Bulk; Bulk
• P_D: 78000

• r_DS(on): 0.8200
• T_J: -55 to 150

SMALL SIGNAL N-CHANNEL MOSFET [See More]

• Packing Method: Bulk; Bulk

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Bulk; Bulk

MOSFET NFET DPAK 30V 38A 11MOHM [See More]

• Packing Method: Bulk; Bulk
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 30

MOSFET N-CH 450V 5A [See More]

• Packing Method: Bulk; Bulk

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Bulk; Surface Mount

• T_J: 150

MOSFET P-CH 30V 9.7A 8SOIC [See More]

• Packing Method: Bulk; Bulk
• T_J: -55 to 150

• P_D: 3100

N-CHANNEL POWER MOSFET [See More]

• Packing Method: Bulk; Bulk

ACCELEROMETER 150G ANALOG [See More]

• Packing Method: Bulk; Bulk

MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT [See More]

• Packing Method: Bulk; Bulk
• r_DS(on): 0.0800

• V_(BR)DSS: 1200
• P_D: 208000

N-CHANNEL POWER MOSFET [See More]

• Packing Method: Bulk; Bulk

8911-E WIRELESS ACCELEROMETER [See More]

• Packing Method: Bulk; Bulk

Trans MOSFET N-CH 100V 1.7A 3-Pin TO-39 [See More]

• Packing Method: Bulk; Bulk
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 100

NCH 10V DRIVE SERIES [See More]

• Packing Method: Bulk; Bulk