Shipping Tube / Stick Magazine Metal-Oxide Semiconductor FET (MOSFET)

500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

Power Field-Effect Transistor, 5A, 500V, N-Channel MOSFET [See More]

• Packing Method: Tube; Tube
• Package Type: TO-220; TO-220AB

• Polarity: N-Channel

Manufacturer: STMicroelectronics. Win Source Part Number: 038130-STP10NK60Z. Category: Discrete Semiconductor Products. Family: FETs - Single. Series: SuperMESH. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-220-3. [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: TO-220; SOT3

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

Power Field-Effect Transistor, 5A, 500V, N-Channel MOSFET [See More]

• Packing Method: Tube; Tube
• Package Type: CAN3/4

• Polarity: N-Channel

Manufacturer: Infineon Technologies. Win Source Part Number: 040689-IRF630SPBF. Category: Discrete Semiconductor Products. Family: FETs - Single. Packaging: Tube. Mounting Style: SMD/SMT. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-263-3 D ²Pak (2 Leads + Tab)... [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: TO-263; SOT3

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

Power MOSFET (N-ch 700V [See More]

• Packing Method: Tube; Tube
• Package Type: TO-220; TO-220SIS

• Polarity: N-Channel

Manufacturer: STMicroelectronics. Win Source Part Number: 053937-STP5NK60Z. Category: Discrete Semiconductor Products. Family: FETs - Single. Series: SuperMESH. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-220-3. Manufacturer... [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: TO-220; SOT3

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Packing Method: Tube; Tube
• Package Type: IPAK-3

• Polarity: N-Channel

Manufacturer: STMicroelectronics. Win Source Part Number: 054061-STW55NM60N. Category: Discrete Semiconductor Products. Family: FETs - Single. Series: MDmesh II. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: 150 °C (TJ). Package: TO-247-3. Manufacturer Device... [See More]

• Packing Method: Tube; Tube
• T_J: 150

• Polarity: N-Channel
• Package Type: TO-247; SOT3

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

Switching N-Channel Power MOSFET [See More]

• Packing Method: Tube; Tube
• Package Type: TO-3; TO-3P (MP-88)

• Polarity: N-Channel

Manufacturer: STMicroelectronics. Win Source Part Number: 066337-STF12NK65Z. Category: Discrete Semiconductor Products. Family: FETs - Single. Series: SuperMESH. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: 150 °C (TJ). Package: TO-220-3 Full Pack. Manufacturer... [See More]

• Packing Method: Tube; Tube
• T_J: 150

• Polarity: N-Channel
• Package Type: TO-220; SOT3

Infineon ’s answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the new 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

Nch Single Power Mosfet 60V 70A 5.8Mohm Mp-45F/To-220 [See More]

• Packing Method: Tube; Tube

• Package Type: TO-220; TO-2204

Manufacturer: Infineon Technologies. Win Source Part Number: 069512-IRFP460APBF. Category: Discrete Semiconductor Products. Family: FETs - Single. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-247-3. Manufacturer Device... [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: TO-247; SOT3

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950 V CoolMOS ™ P7 series delivers... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Packing Method: Tube; Tube
• Package Type: TO-220; TO-220-3FP

• Polarity: N-Channel

Manufacturer: STMicroelectronics. Win Source Part Number: 085868-STW88N65M5. Category: Discrete Semiconductor Products. Family: FETs - Single. Series: MDmesh V. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: 150 °C (TJ). Package: TO-247-3. Manufacturer Device... [See More]

• Packing Method: Tube; Tube
• T_J: 150

• Polarity: N-Channel
• Package Type: TO-247; SOT3

600V CoolMOS ™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220 FullPAK narrow-lead package features... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

Buffer/Inverter Based MOSFET Driver, 6A, BICMOS, CQCC20 [See More]

• Packing Method: Tube; Tube

• Package Type: LCC20

Manufacturer: STMicroelectronics. Win Source Part Number: 086886-STW9N150. Category: Discrete Semiconductor Products. Family: FETs - Single. Series: PowerMESH. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-247-3. Manufacturer... [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: TO-247; SOT3

Infineon's answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

ADP3120 - Dual Bootstrapped 12 VOLT MOSFET Driver with Output Disable [See More]

• Packing Method: Tube; Tube

• Package Type: SOP8

Manufacturer: STMicroelectronics. Win Source Part Number: 088250-STW4N150. Category: Discrete Semiconductor Products. Family: FETs - Single. Series: PowerMESH. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: 150 °C (TJ). Package: TO-247-3. Manufacturer Device... [See More]

• Packing Method: Tube; Tube
• T_J: 150

• Polarity: N-Channel
• Package Type: TO-247; SOT3

500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

High Speed, Dual, 4 AMP MOSFET Driver with THERMAL PROTECTION [See More]

• Packing Method: Tube; Tube

• Package Type: MSOP8

Manufacturer: STMicroelectronics. Win Source Part Number: 089112-STW3N150. Category: Discrete Semiconductor Products. Family: FETs - Single. Series: PowerMESH. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: 150 °C (TJ). Package: TO-247-3. Manufacturer Device... [See More]

• Packing Method: Tube; Tube
• T_J: 150

• Polarity: N-Channel
• Package Type: TO-247; SOT3

Optimized power MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

55V-60V N-Channel Automotive MOSFET [See More]

• Packing Method: Tube; Tube
• Package Type: D2PAK-3

• Polarity: N-Channel

Manufacturer: Infineon Technologies. Win Source Part Number: 205255-IPW90R500C3. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Series: CoolMOS?. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: TO-247; SOT3

Infineon ’s best price performance Superjunction MOSFET for low frequency switching applications in TO-220 package. With a design optimized for low conduction losses, the 600V CoolMOS ™ S7 Superjunction MOSFET (IPP60R065S7) in TO-220 features an optimal RDS(on) x price for low switching... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

20V-40V N-Channel Automotive MOSFET [See More]

• Packing Method: Tube; Tube
• Package Type: D2PAK-7

• Polarity: N-Channel

Manufacturer: Infineon Technologies. Win Source Part Number: 205488-IRLU3636-701TRP. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Series: HEXFET?. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 175 °C (TJ). [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 175

• Polarity: N-Channel
• Package Type: SOT3

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

55V-60V N-Channel Automotive MOSFET [See More]

• Packing Method: Tube; Tube
• Package Type: TO-262

• Polarity: N-Channel

Alternative Parts (Cross-Reference): Cross. Manufacturer: onsemi. Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs. Packaging: Tube. FET Type: N-Channel. Operating Temperature: -55 °C ~ 175 °C (TJ). Mounting Type: Through Hole. Package / Case:... [See More]

• Packing Method: Tube; Tube
• Package Type: SOT3

• Polarity: N-Channel

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

55V-60V N-Channel Automotive MOSFET [See More]

• Packing Method: Tube; Tube
• Package Type: TO-247; TO-247

• Polarity: N-Channel

Manufacturer: STMicroelectronics. Win Source Part Number: 1236549-PD55008-E. Packaging: Tube. Package: PowerSO-10 Exposed Bottom Pad. Current Rating: 4A. Frequency: 500MHz. Current - Test: 150mA. Gain: 17dB. Transistor Type: LDMOS. Voltage - Test: 12.5V. Power - Output: 8W. Categories: Discrete... [See More]

• Packing Method: Tube; Tube
• Package Type: SOT3

• MOSFET Operating Mode: Enhancement

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPP65R041CFD7 in a TO-220 package is ideally suited for resonant topologies in industrial... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

Power Field-Effect Transistor, 75A, 40V, 0.008ohm, N-Channel, MOSFET [See More]

• Packing Method: Tube; Tube
• r_DS(on): 0.0080

• Polarity: N-Channel
• Package Type: SOT263B

Manufacturer: Vishay. Win Source Part Number: 1249910-SIHG32N50D-GE3. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-247-3. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 30A (Tc). Family Name: SiHG32N50D. [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 150

• P_D: 390000
• Package Type: TO-247; SOT3

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

Buffer/Inverter Based MOSFET Driver, 0.4A, PDSO16 [See More]

• Packing Method: Tube; Tube

• Package Type: DIP16

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 759491-AOTF10T60P. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220-3F. Drive Voltage (Max Rds On,... [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 600

• Polarity: N-Channel; N-Channel
• P_D: 43000

CoolMOS ™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600 V, 650 V and 700 V CoolMOS ™ CE combine the optimal R DS(on) and package... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

Half Bridge Based MOSFET Driver, PDSO32 [See More]

• Packing Method: Tube; Tube

• Package Type: HTSSOP32

Manufacturer: ON Semiconductor. Win Source Part Number: 1173603-FCH47N60. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: FCH47N60. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247-3. Drive Voltage (Max Rds... [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 600

• Polarity: N-Channel; N-Channel
• P_D: 417000

A new benchmark in efficiency and thermal performance. 800V CoolMOS ™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

Buffer/Inverter Based MOSFET Driver, 2A, CMOS, PDIP8 [See More]

• Packing Method: Tube; Tube

• Package Type: PDIP8

Manufacturer: ON Semiconductor. Win Source Part Number: 1173867-FDP085N10A. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 100

• Polarity: N-Channel; N-Channel
• P_D: 188000

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950 V CoolMOS ™ P7 series delivers... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

Automotive Power Module (APM), Automotive, 3-Phase, MOSFET [See More]

• Packing Method: Tube; Tube

• Package Type: APM20CBB / 20LD, PDD STD, R-EPS MODULE

Manufacturer: Fairchild/ON Semiconductor. Win Source Part Number: 1173936-FDU7N60NZTU. Series: UniFET-II. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-251-3 Short Leads, IPak, TO-251AA. Technology: MOSFET. Current -... [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 150

• P_D: 90000
• Package Type: SOT3

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET Driver [See More]

• Packing Method: Tube; Tube

• Package Type: DIP24

Manufacturer: ON Semiconductor. Win Source Part Number: 1175150-FQA11N90. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-3P. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 900

• Polarity: N-Channel; N-Channel
• P_D: 300000

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

Discrete MOSFET [See More]

• Packing Method: Tube; Tube

• Package Type: TO-3; TO-3PN 3L

Manufacturer: ON Semiconductor. Win Source Part Number: 1175162-FQA28N50. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: FQA28N50. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-3P. Drive Voltage (Max Rds On,... [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 500

• Polarity: N-Channel; N-Channel
• P_D: 310000

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

FCH060N80 - N-Channel SuperFETII MOSFET [See More]

• Packing Method: Tube; Tube
• Package Type: TO-247; TO-247

• Polarity: N-Channel

Manufacturer: Fairchild/ON Semiconductor. Win Source Part Number: 1175168-FQA7N60. Series: QFET. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-3P-3, SC-65-3. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C:... [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 150

• P_D: 152000
• Package Type: TO-3; SOT3

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

FCPF190N60 - Power MOSFET, N-Channel, SUPERFET II, FAST, 600V, 20.2A [See More]

• Packing Method: Tube; Tube
• Package Type: TO-220; TO-220F

• Polarity: N-Channel

Manufacturer: ON Semiconductor. Win Source Part Number: 1175496-FQPF8N60C. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: FQPF8N60. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220F. Drive Voltage (Max Rds... [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 600

• Polarity: N-Channel; N-Channel
• P_D: 48000

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

FLS2100XS - Half Bridge Based MOSFET Driver, 32A [See More]

• Packing Method: Tube; Tube

• Package Type: ZIP9/13

Manufacturer: Broadcom Limited. Win Source Part Number: 1182029-HSSR-7111. Packaging: Tube. Type: Power MOSFET. Mounting Style: Through Hole. Input Type: DC. Current - Output / Channel: 1.6A. Voltage - Isolation: 1500VDC. Family Name: HSSR-7111. Categories: Isolators. Supplier Device Package: 8-DIP. [See More]

• Packing Method: Tube; Tube
• Package Type: SOT3

• T_J: -55 to 125

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPW65R018CFD7 in TO-247 package is ideally suited for resonant topologies in... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

P-Channel Silicon MOSFET For General Purpose Switching Device Application [See More]

• Packing Method: Tube; Tube
• Package Type: DIP8

• Polarity: P-Channel

Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220 Tube [See More]

• Packing Method: Tube
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 17000

1200V NCH SIC TRENCH MOSFET IN 4 [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 1200

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• r_DS(on): 0.1040

MOSFET N-CH 90V 860MA TO39 [See More]

• Packing Method: Tube; Tube
• I_DSS: 860

• V_(BR)DSS: 90
• Package Type: TO-39; TO-205AD, TO-39-3 Metal Can

SCT3105KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed... [See More]

• Packing Method: Tube
• V_(BR)DSS: 1200

• Polarity: N-Channel
• I_DSS: 17 to 24

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tube; Surface Mount

• T_J: -55 to 150

Bipolar Motor Driver Power MOSFET Parallel 36-VMFP [See More]

• Packing Method: Tube; Tube

• T_J: -10 to 150

MOSFET N-CH 40V 80A TO220AB [See More]

• Packing Method: Tube; Tube
• I_DSS: 80000

• V_(BR)DSS: 40
• Package Type: 2800 pF @ 10 V

This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed. [See More]

• Packing Method: Tube
• V_(BR)DSS: 1200

• Transistor Technology / Material: SiC
• I_DSS: 40000

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tube; Through Hole

• T_J: -55 to 175

Dual 4A MOSFET Driver 8-HVSSOP -40 to 105 [See More]

• Packing Method: Tube; Tube
• T_J: -40 to 125

• P_D: 3000

MOSFET N-CH 500V 20A TO3P-3L [See More]

• Packing Method: Tube; Tube
• I_DSS: 20000

• V_(BR)DSS: 500
• Package Type: TO-3P-3, SC-65-3

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tube; Through Hole

• T_J: -55 to 150

FAIRCHILD SEMICONDUCTOR FCPF150N65F Power MOSFET, N Channel, 24 A, 650 V, 0.133 ohm, 10 V, 5 VNew [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 150

• P_D: 39000

MOSFET P-CH 40V 50MA TO72 [See More]

• Packing Method: Tube; Tube
• I_DSS: 0.0500

• V_(BR)DSS: 40
• Package Type: TO-206AF, TO-72-4 Metal Can

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tube; Through Hole

• T_J: -55 to 150

FAIRCHILD SEMICONDUCTORFQA170N06N CHANNEL MOSFET, 60V, 170A, TO-3PN [See More]

• Packing Method: Tube; Tube
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 60

MOSFET N-CH 55V 2A SOT223 [See More]

• Packing Method: Tube; Tube
• I_DSS: 2000

• V_(BR)DSS: 55
• Package Type: TO-261-4, TO-261AA

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tube; Through Hole

• T_J: -55 to 175

FULL BRIDGE BASED MOSFET DRIVER [See More]

• Packing Method: Tube; Tube

• T_J: -40 to 125

MOSFET N-CH 100V 4.5A 8SO [See More]

• Packing Method: Tube; Tube
• I_DSS: 4500

• V_(BR)DSS: 100
• Package Type: 8-SOIC (0.154, 3.90mm Width)

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tube; Through Hole

• T_J: -50 to 150

Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET [See More]

• Packing Method: Tube; Tube

• T_J: -55 to 150

MOSFET N-CH 600V 12A TO220 [See More]

• Packing Method: Tube; Tube
• I_DSS: 12000

• V_(BR)DSS: 600
• Package Type: TO-220; TO-220-3

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tube; Through Hole

• T_J: -55 to 150

IC DRIVER MOSFET 1.5A DUAL 8-DIP [See More]

• Packing Method: Tube; Tube

• T_J: -40 to 150

MOSFET N-CH 500V 26A D3PAK [See More]

• Packing Method: Tube; Tube
• I_DSS: 26000

• V_(BR)DSS: 500
• Package Type: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

RF MOSFET DE150 [See More]

• Packing Method: Tube; Tube

• Package Type: 6-SMD, Flat Lead Exposed Pad

IC DRIVER MOSFET 100V CMOS 8SOIC [See More]

• Packing Method: Tube; Tube

• T_J: -40 to 125

MOSFET N-CH 40V 195A TO262 [See More]

• Packing Method: Tube; Tube
• I_DSS: 195000

• V_(BR)DSS: 40
• Package Type: TO-262-3 Long Leads, I2PAK, TO-262AA

RF MOSFET DE275 [See More]

• Packing Method: Tube; Tube

• Package Type: 6-SMD, Flat Lead Exposed Pad

IC DRIVER MOSFET 12A HS TO220-5 [See More]

• Packing Method: Tube; Tube
• T_J: 0.0 to 70

• P_D: 2000

RF MOSFET LDMOS 26V LDMOST [See More]

• Packing Method: Tube; Tube

• Package Type: LDMOST

RF MOSFET DE275 [See More]

• Packing Method: Tube; Tube

IC MOSFET DRIVER 6A HS 8DFN [See More]

• Packing Method: Tube; Tube

• T_J: -40 to 150

RF MOSFET LDMOS SOT539A [See More]

• Packing Method: Tube; Tube

• Package Type: SOT539A

MOSFET N-CH 60V 990MA TO205AD [See More]

• Packing Method: Tube; Tube
• I_DSS: 990

• V_(BR)DSS: 60
• Package Type: TO-39; TO-205AD, TO-39-3 Metal Can

IC MOSFET DRIVER DUAL HS 8SOIC [See More]

• Packing Method: Tube; Tube
• T_J: 0.0 to 150

• P_D: 560

RF MOSFET LDMOS 30V LDMOST [See More]

• Packing Method: Tube; Tube

MOSFET P-CH 160V 7A TO3P [See More]

• Packing Method: Tube; Tube
• I_DSS: 7000

• V_(BR)DSS: 160
• Package Type: TO-220; TO-220-3 Full Pack

IC MOSFET DRIVER HI CURNT 8SOIC [See More]

• Packing Method: Tube; Tube
• T_J: 0.0 to 125

• P_D: 1150

RF MOSFET LDMOS 30V SOT502B [See More]

• Packing Method: Tube; Tube

• Package Type: Chassis Mount

MOSFET P-CH 100V 12A TO220NIS [See More]

• Packing Method: Tube; Tube
• I_DSS: 12000

• V_(BR)DSS: 100
• Package Type: TO-220; TO-220-3 Full Pack

IC MOSFET DRIVER HIGH SIDE 8SOIC [See More]

• Packing Method: Tube; Tube
• T_J: -40 to 150

• P_D: 625

RF MOSFET LDMOS 28V CDFM6 [See More]

• Packing Method: Tube; Tube

• Package Type: SOT-1244C

MOSFET P-CH 60V 28A TO220F-3SG [See More]

• Packing Method: Tube; Tube
• I_DSS: 28000

• V_(BR)DSS: 60
• Package Type: TO-220; TO-220-3 Full Pack

IC MOSFET DRVR DUAL INVERT 8SOIC [See More]

• Packing Method: Tube; Tube

• T_J: -40 to 125

RF MOSFET LDMOS 28V CDFM6 [See More]

• Packing Method: Tube; Tube

• Package Type: SOT-1244B

MOSFET P-CH 60V 38A TO262-3 [See More]

• Packing Method: Tube; Tube
• I_DSS: 38000

• V_(BR)DSS: 60
• Package Type: TO-262-3 Long Leads, I2PAK, TO-262AA

IC MOSFET DRVR HI/LO SIDE 16-DIP [See More]

• Packing Method: Tube; Tube

• T_J: -40 to 150

RF MOSFET LDMOS 28V CDFM8 [See More]

• Packing Method: Tube; Tube

• Package Type: Chassis Mount

MOSFET N-CH 1000V 4A TO220AB [See More]

• Packing Method: Tube; Tube
• I_DSS: 4000

• V_(BR)DSS: 1000
• Package Type: TO-220; TO-220-3

IC MOSFET DRVR LS 4A DUAL 16SOIC [See More]

• Packing Method: Tube; Tube

• T_J: -55 to 150

RF MOSFET LDMOS 28V CDFM8 [See More]

• Packing Method: Tube; Tube

• Package Type: Chassis Mount

ABU / MOSFET [See More]

• Packing Method: Tube; Tube
• I_DSS: 2000

• V_(BR)DSS: 1500
• Package Type: TO-220; TO-220-3 Full Pack

IC MOSFET DRVR LS 4A DUAL 8-SOIC [See More]

• Packing Method: Tube; Tube

• T_J: -55 to 150

RF MOSFET CDFM6 [See More]

• Packing Method: Tube; Tube

• Package Type: Chassis Mount

MOSFET N-CH 60V 45A TO220FL [See More]

• Packing Method: Tube; Tube
• I_DSS: 45000

• V_(BR)DSS: 60
• Package Type: TO-220; TO-220-3, Short Tab

IC MOSFET DVR 1.5A DUAL HS 8CDIP [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 125

• P_D: 800

MOSFET N-CH 55V 100A TO220AB [See More]

• Packing Method: Tube; Tube
• I_DSS: 100000

• V_(BR)DSS: 55
• Package Type: TO-220; TO-220-3

MOSFET N-CH 900V 3A TO3P [See More]

• Packing Method: Tube; Tube
• I_DSS: 3000

• V_(BR)DSS: 900
• Package Type: 750 pF @ 25 V

IC MOSFET DVR 3A DUAL HS 16-SOIC [See More]

• Packing Method: Tube; Tube
• T_J: 0.0 to 150

• P_D: 470

MOSFET N-CH 30V 100A TO220AB [See More]

• Packing Method: Tube; Tube
• I_DSS: 100000

• V_(BR)DSS: 30
• Package Type: Through Hole

MOSFET N-CH 900V 3A TO220SIS [See More]

• Packing Method: Tube; Tube
• I_DSS: 3000

• V_(BR)DSS: 900
• Package Type: TO-220; TO-220-3 Full Pack

IC MOSFET DVR 9A NON-INV TO220-5 [See More]

• Packing Method: Tube; Tube

• T_J: -40 to 150

PFET, 75A I(D), 100V, 0.01OHM, 1 [See More]

• Packing Method: Tube; Tube
• I_DSS: 75000

• V_(BR)DSS: 100
• Package Type: TO-220; TO-220-3

MOSFET N-CH 1500V 2A TO3P-3L [See More]

• Packing Method: Tube; Tube
• I_DSS: 2000

• V_(BR)DSS: 1500
• Package Type: TO-3P-3, SC-65-3

IC MOSFET DVR QUAD NAND 14DIP [See More]

• Packing Method: Tube; Tube
• T_J: 0.0 to 150

• P_D: 800

MOSFET N-CH 40V 75A TO220-5 [See More]

• Packing Method: Tube; Tube
• I_DSS: 75000

• V_(BR)DSS: 40
• Package Type: TO-220; TO-220-5

MOSFET N-CH 1500V 2A TO3PF-3 [See More]

• Packing Method: Tube; Tube
• I_DSS: 2000

• V_(BR)DSS: 1500
• Package Type: SC-94

IC SYNC MOSFET DVR 4A 8-SOIC [See More]

• Packing Method: Tube; Rail/Tube
• T_J: -40 to 125

• P_D: 1250

MOSFET N-CH 55V 75A I2PAK [See More]

• Packing Method: Tube; Tube
• I_DSS: 75000

• V_(BR)DSS: 55
• Package Type: TO-262-3 Long Leads, I2PAK, TO-262AA

MOSFET N-CH 1500V 2A TO3PML [See More]

• Packing Method: Tube; Tube
• I_DSS: 2000

• V_(BR)DSS: 1500
• Package Type: TO-3P-3 Full Pack

IC, HIGH SIDE MOSFET PWR SW, 5.5V 8-SOIC [See More]

• Packing Method: Tube; Tube
• T_J: -40 to 125

• r_DS(on): 0.0750

MOSFET N-CH 75V 75A TO220AB [See More]

• Packing Method: Tube; Tube
• I_DSS: 75000

• V_(BR)DSS: 75
• Package Type: TO-220; TO-220-3

MOSFET N-CH 60V 100A TO220-3 [See More]

• Packing Method: Tube; Tube
• I_DSS: 100000

• V_(BR)DSS: 60
• Package Type: Through Hole

In a Pack of 10, N-Channel MOSFET, 5.7 A, 600 V, 3-Pin TO-220FP Infineon IPA60R750E6XKSA1 [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

75M 1200V 175C SIC FET [See More]

• Packing Method: Tube; Tube
• I_DSS: 32000

• V_(BR)DSS: 1200
• Package Type: TO-247; TO-247-3

MOSFET N-CH 500V 5A TO220F-3FS [See More]

• Packing Method: Tube; Tube
• I_DSS: 5000

• V_(BR)DSS: 500
• Package Type: 360 pF @ 30 V