Enhancement Metal-Oxide Semiconductor FET (MOSFET)

Manufacturer: Freescale Semiconductor - NXP. Win Source Part Number: 1158498-C4532X7R1H685K. Manufacturer Homepage: www.freescale.com. Popularity: Medium. Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited. Application Field: Used in Industrial, Consumer Electronics, Portable... [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Channel 60V 3A SOT223 [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: SOT223; Sot-223

• Polarity: N-Channel
• Number of units in IC: 1

PCH 1.8V DRIVE SERIES Product overview: MCH3306-TL-E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package... [See More]

• MOSFET Operating Mode: Enhancement
• P_D: 1000

• V_(BR)DSS: 20
• T_J: -55

MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V, 7.5 Ohm [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: SOT23; SOT-23-3

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

MOSFET Array N and P-Channel Complementary 10.6V - 500mW Through Hole 8-PDIP [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• I_DSS: -2 to 4.8

• V_(BR)DSS: 12
• r_DS(on): 500 to 1800

Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineon ’s famous low voltage OptiMOS ™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and... [See More]

• MOSFET Operating Mode: Enhancement
• Transistor Technology / Material: Si/SiC

• Polarity: N+P
• V_GS(off): -4 to 4

Logic level N-channel MOSFET in a small MLPAK33 ‑WF package using Trench12 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. Features and benefits. Logic-level compatible. Trench12 MOSFET technology. Efficient... [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT8002-3

Win Source Part Number: 1085314-PJS6600_S1_00001. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature: Standard. Drain to Source Voltage... [See More]

• MOSFET Operating Mode: Enhancement
• T_J: -55 to 150

• Polarity: P-Channel
• Package Type: SOT3; SOT23

MOSFET N-Channel 60V 12A DPAK [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-252 (DPAK); Dpak (to-252)

• Polarity: N-Channel
• Number of units in IC: 1

N-Channel Enhancement-Mode RF Power Lateral LDMOSFET [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: CFM2F

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

MOSFET Array N and P-Channel Complementary 10.6V - 500mW Surface Mount 8-SOIC [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• I_DSS: -2 to 4.8

• V_(BR)DSS: 12
• r_DS(on): 500 to 1800

Complementary power MOSFETs - an n-channel and a p-channel power MOSFET within the same package - are part of Infineon ’s famous low voltage OptiMOS ™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and... [See More]

• MOSFET Operating Mode: Enhancement
• Transistor Technology / Material: Si/SiC

• Polarity: N+P
• V_GS(off): -1.4 to 1.4

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Trench MOSFET technology. Extremely fast switching. Logic level compatible. Subminiature surface mounting. [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT23; SOT23

Win Source Part Number: 1085355-PJX138K_R1_00001. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 4,000. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 50V. [See More]

• MOSFET Operating Mode: Enhancement
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: SOT3

STD20NF06T4,MOSFET N-Ch 60V 24A DPAK [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-252 (DPAK); Dpak (to-252)

• Polarity: N-Channel
• Number of units in IC: 1

RF Power Field-Effect Transistor, N-Channel Enhancement Mode Lateral MOSFET [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: NI-1230

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

MOSFET Array 2 N and 2 P-Channel Matched Pair 10.6V 40mA, 16mA 500mW Through Hole 14-PDIP [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• I_DSS: -16 to 40

• V_(BR)DSS: 12
• r_DS(on): 75 to 270

Infineon ’s OptiMOS ™ 100V, 120V and 150V families combine very low on-state resistance (R DS(on)) and fastest switching behavior, providing outstanding performance to a wide range of industrial and consumer applications. From high current motor control applications to fast switching... [See More]

• MOSFET Operating Mode: Enhancement
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2 to 3.5

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Extended temperature range Tj = 175 °C. Side wettable flanks for optical solder inspection. [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT1220

Win Source Part Number: 1085356-PJX138K-AU_R1_000A1. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 4,000. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 50V. [See More]

• MOSFET Operating Mode: Enhancement
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: SOT3

MOSFET N-Channel 600V 13A TO220 [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-220; To-220

• Polarity: N-Channel
• Number of units in IC: 1

A3T21H400W23SR6 - RF Power LDMOS Transistor N-Channel Enhancement--Mode Lateral MOSFET [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: CFM6F, ACP-1230S-4L2S

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

MOSFET Array 2 N and 2 P-Channel Matched Pair 10.6V 40mA, 16mA 500mW Surface Mount 14-SOIC [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• I_DSS: -16 to 40

• V_(BR)DSS: 12
• r_DS(on): 75 to 270

P-Channel Power MOSFET -100 V in DPAK package. Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and... [See More]

• MOSFET Operating Mode: Enhancement
• Transistor Technology / Material: Si/SiC

• Polarity: P-Channel; P
• V_GS(off): -1.5

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Logic-level compatible. Extended temperature range Tj = 175 °C. Trench MOSFET technology. ElectroStatic... [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 1200

Win Source Part Number: 973805-PJT7812_R1_00001. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 30V. [See More]

• MOSFET Operating Mode: Enhancement
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: SOT3

MOSFET N-Ch 100V 80A UltraFET II D2PAK [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-263; D2pak (to-263)

• Polarity: N-Channel
• Number of units in IC: 1

30A, 60V, Logic Level N-Channel Enhancement-Mode Power MOSFET, TO-220AB [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-220; TO-220AB

• Polarity: N-Channel

MOSFET Array 2 N and 2 P-Channel Matched Pair 10.6V - 500mW Through Hole 14-PDIP [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• I_DSS: -2 to 4.8

• V_(BR)DSS: 12
• r_DS(on): 500 to 1800

N-Channel Small Signal MOSFET 240 V in SOT-223 package. Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels... [See More]

• MOSFET Operating Mode: Enhancement
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 0.6000 to 1.4

NextPower 100 V, enhanced logic level gate drive MOSFET in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package. Features and benefits. Logic-level compatible. Low Qrr for higher efficiency and lower spiking. Low QG × RDSon FOM for high efficiency switching applications. Strong... [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT8002-1

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 180371-AO4447AL. Category: Discrete Semiconductor Products. Family: FETs - Single. Family Name: AO4447AL. Alternative Parts (Cross-Reference): TPC8114(T2LSDI,Q); UPA2717GR-E1; UPA2717GR-E2; TPC8114;. Introduction Date:... [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Ch 55V 80A UltraFET II D2PAK [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-263; D2pak (to-263)

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 N and 2 P-Channel Matched Pair 10.6V - 500mW Surface Mount 14-SOIC [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• I_DSS: -2 to 4.8

• V_(BR)DSS: 12
• r_DS(on): 500 to 1800

N-Channel Small Signal MOSFET 20 V in SOT-23 package. Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels... [See More]

• MOSFET Operating Mode: Enhancement
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 0.3000 to 0.7500

P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Trench MOSFET technology. MLPAK33 package (3.3 x 3.3 mm footprint). Low thermal resistance. Low 0.8 mm profile. [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT8002-2

Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 180578-AON7401L. Category: Discrete Semiconductor Products. Family: FETs - Single. Family Name: AON7401L. Alternative Parts (Cross-Reference): BSC130P03LSGXT; BSZ120P03NS3EGXT; TPCC8103,L1Q(CM; SSM6N24TU(BRA,F);. Introduction... [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Channel 1KV 13A SuperMESH TO247 [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-247; To-247

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• V_(BR)DSS: 10

• Polarity: N-Channel
• I_DSS: 3

P-channel enhancement mode Field-Effect Transistor (FET), -30 V, TSOP-6. Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With... [See More]

• MOSFET Operating Mode: Enhancement
• Transistor Technology / Material: Si/SiC

• Polarity: P-Channel; P
• V_GS(off): -2 to -1

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Very fast switching. Trench MOSFET technology. Applications. Relay... [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: 110

• Polarity: N-Channel
• I_DSS: 9900

Manufacturer: NXP. Win Source Part Number: 237254-BSN20W. Category: Discrete Semiconductor Products. Family: FETs - Single. Family Name: BSN20W. Introduction Date: June 20, 1997. Country of Origin: China, Hong Kong, Malaysia, Thailand. Estimated EOL Date: Obsolete / End of life. Is this a... [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Ch 1KV 3.5A SuperMESH TO220FP [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-220; To-220fp

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• V_(BR)DSS: 10

• Polarity: N-Channel
• I_DSS: 3

P-channel enhancement mode Field-Effect Transistor (FET), -60 V, SC-59. Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With... [See More]

• MOSFET Operating Mode: Enhancement
• Transistor Technology / Material: Si/SiC

• Polarity: P-Channel; P
• V_GS(off): -2 to -1

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Very fast switching. Ultra small package: 0.96 × 0.96 × 0.24 mm. Trench... [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: 12

• Polarity: N-Channel
• I_DSS: 14000

Manufacturer: Diodes Incorporated. Win Source Part Number: 252595-DMG3415UQ-7. Category: Discrete Semiconductor Products. Family: FETs - Single. Popularity: Medium. Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Ch 900V 5.8A SuperMESH TO220FP [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-220; To-220fp

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• V_(BR)DSS: 12

• Polarity: N-Channel
• I_DSS: 40

N-Channel Small Signal MOSFET 240 V in SOT-89 package. Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels... [See More]

• MOSFET Operating Mode: Enhancement
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 0.8000 to 1.8

N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Ultra small package: 0.98 × 1.48 × 0.35 mm. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: 12

• Polarity: N-Channel
• I_DSS: 9600

Manufacturer: Diodes Incorporated. Win Source Part Number: 252618-DMN26D0UFB4-7B. Category: Discrete Semiconductor Products. Family: FETs - Single. Popularity: Medium. Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Channel 75V 75A D2PAK [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-263; D2pak (to-263)

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• V_(BR)DSS: 12

• Polarity: N-Channel
• I_DSS: 40

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Trench MOSFET technology. Leadless ultra small and thin SMD plastic package: 1.1 × 1.0... [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: 12

• Polarity: N-Channel
• I_DSS: 3200

Manufacturer: Diodes Incorporated. Win Source Part Number: 252672-DMP3160LQ-7. Category: Discrete Semiconductor Products. Family: FETs - Single. Popularity: Medium. Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Channel 800V 11A TO247 [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-247; To-247

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• V_(BR)DSS: 12

• Polarity: N-Channel
• I_DSS: 40

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Very low threshold voltage. Very fast switching. Trench MOSFET technology. ElectroStatic Discharge... [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: 12

• Polarity: N-Channel
• I_DSS: 1500

Manufacturer: Diodes Incorporated. Win Source Part Number: 418573-ZXMP3A16GTC. Category: Discrete Semiconductor Products. Family: FETs - Single. Popularity: Medium. Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Channel 600V 5A DPAK [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-252 (DPAK); Dpak (to-252)

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 40mA 500mW Surface Mount 8-SOIC [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• V_(BR)DSS: 12

• Polarity: N-Channel
• I_DSS: 40

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Very low threshold voltage. Very fast switching. Trench MOSFET technology. ElectroStatic... [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: 12

• Polarity: N-Channel
• I_DSS: 1500

Manufacturer: Advanced Power Electronics Corp. Win Source Part Number: 744381-AP50T10AGI-HF. Manufacturer Homepage: www.a-power.com.tw. Reference case: TO-220F. Reference Date Code: 13+. Popularity: Medium. Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Channel 600V 20A TO247 [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-247; To-247

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• V_(BR)DSS: 12

• Polarity: N-Channel
• I_DSS: 40

P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Ultra small package: 0.78 × 0.78 × 0.35 mm. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: -12

• Polarity: P-Channel
• I_DSS: -4900

Manufacturer: Cystech Electonics Corp. Win Source Part Number: 1228018-MTA90N03ZN3. Manufacturer Homepage: www.cystekec.com. Popularity: Medium. Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Channel 500V 21A TO247 [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-247; To-247

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• V_(BR)DSS: 12

• Polarity: N-Channel
• I_DSS: 40

P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Ultra small package: 0.98 × 1.48 × 0.35 mm. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: -12

• Polarity: P-Channel
• I_DSS: -8200

Manufacturer: Cystech Electonics Corp. Win Source Part Number: 1228020-MTB020N03KM3. Manufacturer Homepage: www.cystekec.com. Popularity: Medium. Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Channel 650V 33A D2PAK [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-263; D2pak (to-263)

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• V_(BR)DSS: 12

• Polarity: P-Channel
• I_DSS: -16

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Trench MOSFET technology. Small and leadless ultra thin SMD plastic... [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: -12

• Polarity: P-Channel
• I_DSS: -16000

Manufacturer: Cystech Electonics Corp. Win Source Part Number: 1228029-MTB080P06M3. Manufacturer Homepage: www.cystekec.com. Popularity: Medium. Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Channel 900V 11A TO247 [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-247; To-247

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• V_(BR)DSS: 12

• Polarity: P-Channel
• I_DSS: -16

The NSF017120T2A0 is a Silicon Carbide based 1200V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial... [See More]

• MOSFET Operating Mode: Enhancement
• I_DSS: 122000

• V_(BR)DSS: 1200
• T_J: 175

Manufacturer: Cystech Electonics Corp. Win Source Part Number: 1228066-MTB40P06V8. Manufacturer Homepage: www.cystekec.com. Popularity: Medium. Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Channel 600V 20A TO247 [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-247; To-247

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• V_(BR)DSS: 12

• Polarity: P-Channel
• I_DSS: -16

The NSF030120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage... [See More]

• MOSFET Operating Mode: Enhancement
• I_DSS: 67000

• V_(BR)DSS: 1200
• T_J: 175

Manufacturer: Cystech Electonics Corp. Win Source Part Number: 1228102-MTC3586DFA6. Manufacturer Homepage: www.cystekec.com. Popularity: Medium. Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Channel 1.5KV 8A TO247 [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-247; To-247

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• V_(BR)DSS: 12

• Polarity: P-Channel
• I_DSS: -16

The NSF030120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage... [See More]

• MOSFET Operating Mode: Enhancement
• I_DSS: 67000

• V_(BR)DSS: 1200
• T_J: 175

Manufacturer: Cystech Electonics Corp. Win Source Part Number: 1228106-MTC6333G6. Manufacturer Homepage: www.cystekec.com. Popularity: Medium. Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Channel 600V 20A TO220FP [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-220; To-220fp

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• V_(BR)DSS: 12

• Polarity: P-Channel
• I_DSS: -16

The NSF030120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage... [See More]

• MOSFET Operating Mode: Enhancement
• I_DSS: 67000

• V_(BR)DSS: 1200
• T_J: 175

Manufacturer: Cystech Electonics Corp. Win Source Part Number: 1228169-MTE1K8N25L3. Manufacturer Homepage: www.cystekec.com. Popularity: Medium. Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Channel 650V 35A TO-220FP [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-220; To-220fp

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• V_(BR)DSS: 12

• Polarity: P-Channel
• I_DSS: -16

N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Ultra small package: 0.78 × 0.78 × 0.35 mm. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: 12

• Polarity: N-Channel
• I_DSS: 6000

Manufacturer: Cystech Electonics Corp. Win Source Part Number: 1228216-MTN3434G6. Manufacturer Homepage: www.cystekec.com. Popularity: Medium. Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Channel 650V 42A D2PAK [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-263; D2pak (to-263)

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• V_(BR)DSS: 10

• Polarity: N-Channel
• I_DSS: 3

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Very fast switching. Trench MOSFET technology. 2 kV ESD protection. AEC-Q101 qualified. Applications. [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT363

Manufacturer: Cystech Electonics Corp. Win Source Part Number: 1228281-MTP3LP01N3. Manufacturer Homepage: www.cystekec.com. RoHS State: Request Verification. Popularity: Medium. Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Ch 100V 80A MDmesh II DPAK [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-252 (DPAK); Dpak (to-252)

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• V_(BR)DSS: 10

• Polarity: N-Channel
• I_DSS: 3

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Very fast switching. Trench MOSFET technology. ESD protection up to 2 kV. Applications. [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: 20

• Polarity: N-Channel; P-Channel
• I_DSS: 800

Manufacturer: Cystech Electonics Corp. Win Source Part Number: 1228307-MTP5103N3. Manufacturer Homepage: www.cystekec.com. Popularity: Medium. Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Ch 100V 180A MDmesh II H2PAK [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: H2pak

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP [See More]

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• V_(BR)DSS: 10

• Polarity: N-Channel
• I_DSS: 79

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Very fast switching. Trench MOSFET technology. 2 kV... [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: 20

• Polarity: N-Channel; P-Channel
• I_DSS: 5300

Manufacturer: Wuxi NCE Power Semiconductor Co., Ltd. Win Source Part Number: 1229630-NCE01P13. Manufacturer Homepage: www.ncepower.com. Popularity: Medium. Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Channel 100V 110ATO-220 [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: TO-220; To-220

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Surface Mount 8-SOIC [See More]

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• V_(BR)DSS: 10

• Polarity: N-Channel
• I_DSS: 79

P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low RDSon. Very fast switching. Trench MOSFET technology. Applications. Relay driver. High-speed line driver. [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: -20

• Polarity: P-Channel
• I_DSS: -1000

Manufacturer: Wuxi NCE Power Semiconductor Co., Ltd. Win Source Part Number: 1229631-NCE01P13K. Manufacturer Homepage: www.ncepower.com. Popularity: Medium. Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance [See More]

• MOSFET Operating Mode: Enhancement

• Package Type: SOT3

MOSFET N-Ch 1500V 2.5A PowerMESH H2PAK2 [See More]

• MOSFET Operating Mode: Enhancement
• Package Type: H2pak-2

• Polarity: N-Channel
• Number of units in IC: 1

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP [See More]

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• V_(BR)DSS: 10

• Polarity: N-Channel
• I_DSS: 79

Industrial grade, single switch SiC mosfet built in a 4 connectors, UL certified SOT227B package providing 3000V isolation (1s). Featuring a kelvin connection pin, and exhibiting good power cycling characteristics, and a very fast and low losses switching behaviour, this mosfets is recommend for use... [See More]

• MOSFET Operating Mode: Enhancement
• I_DSS: 142000

• V_(BR)DSS: 900
• T_J: 175

Self-Aligning Silicon Gate Sturcture. Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage - 0.6V typ. [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: 25

• Polarity: N-Channel
• I_DSS: 50

-20V, P ch NexFET MOSFET ™, single SON 2x2, 23.9mOhm 6-WSON -55 to 150 [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• V_(BR)DSS: 20

• Transistor Technology / Material: SILICON
• r_DS(on): 0.0890

Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies. 1200 V with low RDS(on) = 30 m Ω SiC MOSFET technology with... [See More]

• MOSFET Operating Mode: Enhancement
• I_DSS: 30000

• V_(BR)DSS: 1200
• T_J: 175

10V DRIVE NCH MOSFET (AEC-Q101 Q [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• V_(BR)DSS: 60

• Transistor Technology / Material: SILICON
• r_DS(on): 0.0160

Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies. 1200 V with low RDS(on) = 80 m Ω SiC MOSFET technology with... [See More]

• MOSFET Operating Mode: Enhancement
• I_DSS: 40000

• V_(BR)DSS: 1200
• T_J: 175

1200V NCH SIC TRENCH MOSFET IN 4 [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• r_DS(on): 0.1040

• V_(BR)DSS: 1200
• P_D: 165000

The high-performance ceramic substrate based isolated package offers inherent isolation, higher thermal conductivity and reduces thermal resistance junction-to-heatsink while remaining industry standard footprint compatible. These SiC MOSFETs are engineered to reduce the on-state resistance, to... [See More]

• MOSFET Operating Mode: Enhancement
• I_DSS: 25000

• V_(BR)DSS: 1200
• T_J: 150

30V N CH MOSFET [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• P_D: 500

• Transistor Technology / Material: SILICON
• T_J: -55 to 150

Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0080 1200 V come in ratings of 1200 V, 80 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off... [See More]

• MOSFET Operating Mode: Enhancement
• I_DSS: 39000

• V_(BR)DSS: 1200
• T_J: 175

30V NCH NCH MID POWER MOSFET [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• V_(BR)DSS: 30

• Transistor Technology / Material: SILICON
• r_DS(on): 0.0133

Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0120 1200 V come in ratings of 1200 V, 120 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off... [See More]

• MOSFET Operating Mode: Enhancement
• I_DSS: 27000

• V_(BR)DSS: 1200
• T_J: 175

30V NCH+NCH POWER MOSFET [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• V_(BR)DSS: 30

• Transistor Technology / Material: SILICON
• r_DS(on): 0.0200

Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0160 1200 V come in ratings of 1200 V, 160 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off... [See More]

• MOSFET Operating Mode: Enhancement
• I_DSS: 27000

• V_(BR)DSS: 1200
• T_J: 175

40V N CH MOSFET [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• V_(BR)DSS: 40

• Transistor Technology / Material: SILICON
• r_DS(on): 0.0079

Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the... [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: 1200

• Polarity: N-Channel
• I_DSS: 70000

4V DRIVE NCH+NCH MOSFET [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• V_(BR)DSS: 30

• Transistor Technology / Material: SILICON
• r_DS(on): 0.0700

Littelfuse 1700V, 750mOhm Silicon Carbide (SiC) MOSFET bring SiC fast switching and energy saving performance to the 1700V voltage range, focusing on auxiliary power supplies. The MOSFET is available in 3 different discrete packages, with the recent addition of a TO-268-2L option with extra... [See More]

• MOSFET Operating Mode: Enhancement
• I_DSS: 4400

• V_(BR)DSS: 1700
• T_J: 175

4V DRIVE NCH+PCH MOSFET [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL
• V_(BR)DSS: 30

Enhancement Mode [See More]

• MOSFET Operating Mode: Enhancement
• I_DSS: 6200

• V_(BR)DSS: 1700
• T_J: 175

60V N CH MOSFET [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• r_DS(on): 0.0081

• Polarity: N-Channel; N-CHANNEL
• P_D: 66000

Our new 1700V, 750mOhm Silicon Carbide (SiC) MOSFETs are presented in TO-263-7L package. The separated source pin reduces significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175... [See More]

• MOSFET Operating Mode: Enhancement
• I_DSS: 4500

• V_(BR)DSS: 1700
• T_J: 175

Automotive N-Channel 100 V (D-S) 175 °C MOSFET [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• Transistor Technology / Material: SILICON

• Polarity: N-Channel; N-CHANNEL
• V_(BR)DSS: 100

Industrial grade, single switch SiC mosfets built in a TO268 high voltage package with extra clearance and creepage for harsh, dirty industrial environmental conditions. [See More]

• MOSFET Operating Mode: Enhancement
• V_(BR)DSS: 1200

• Polarity: N-Channel
• I_DSS: 90000

BUK9K35-60E - Dual N-channel 60 V, 35 mO logic level MOSFET [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• r_DS(on): 0.0350

DIODES INC. DMP3025LK3-13 MOSFET Transistor, P Channel, 16.1 A, -30 V, 25 mohm, -10 V, -1 V [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• r_DS(on): 0.0250

• Transistor Technology / Material: SILICON
• P_D: 10000

Dual Common Drain P-Channel PowerTrench ® MOSFET -20V, -7A, 36mO [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• Transistor Technology / Material: SILICON

• Polarity: P-Channel
• V_(BR)DSS: -20

Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8 [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• V_(BR)DSS: 20

Dual N-Channel 30 V 0.024 Ohm Surface Mount Enhancement Mode MOSFET - SOP-8 [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• V_(BR)DSS: 30

Dual N-Channel 30 V 2.2 Ohm 450 mW Silicon Surface Mount Mosfet - SOT-563 [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• V_(BR)DSS: 30

FAIRCHILD SEMICONDUCTORFQA170N06N CHANNEL MOSFET, 60V, 170A, TO-3PN [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• V_(BR)DSS: 60

• Transistor Technology / Material: SILICON
• r_DS(on): 5.60E6

FDMC86520L Series 60 V 13.5 A 7.9 mOhm N.Ch. PowerTrench Mosfet - MLP-8 [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• V_(BR)DSS: 60

• Transistor Technology / Material: SILICON
• r_DS(on): 0.0079

FDMS7650DC N-Channel MOSFET, 289 A, 30 V PowerTrench, 8-Pin Power 56 ON Semiconductor [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• V_(BR)DSS: 30

IC MOSFET N-CH 80V TO-220 [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• V_(BR)DSS: 80

• Transistor Technology / Material: SILICON
• r_DS(on): 0.0028

In a Pack of 10, N-Channel MOSFET, 17 A, 100 V, 4-Pin SOT-669 Nexperia PSMN069-100YS, 115 [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• V_(BR)DSS: 90

In a Pack of 10, N-Channel MOSFET, 400 mA, 200 V, 3-Pin SOT-89 Nexperia BSS87, 115 [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• V_(BR)DSS: 200

In a Pack of 10, N-Channel MOSFET, 5.7 A, 600 V, 3-Pin TO-220FP Infineon IPA60R750E6XKSA1 [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• r_DS(on): 0.7500

In a Pack of 25, 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB43UNEZ [See More]

• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• r_DS(on): 0.0540