SOT23 Metal-Oxide Semiconductor FET (MOSFET)

MOSFET N-Channel 60V 0.115A SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 60

MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V, 7.5 Ohm [See More]

• Package Type: SOT23; SOT-23-3
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

Win Source Part Number: 1085314-PJS6600_S1_00001. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature: Standard. Drain to Source Voltage... [See More]

• Package Type: SOT3; SOT23
• MOSFET Operating Mode: Enhancement

• Polarity: P-Channel
• T_J: -55 to 150

Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs. Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component it is possible to realize a simple current... [See More]

• Package Type: SOT23; PG-SOT23-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• MOSFET Operating Mode: Depletion

SMALL SIGNAL N-CHANNEL MOSFET [See More]

• Package Type: SOT23; SOT-23-6 Thin, TSOT-23-6
• V_(BR)DSS: 20

• Polarity: N-Channel; 2 N-Channel (Dual)
• I_DSS: 2500

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Trench MOSFET technology. Extremely fast switching. Logic level compatible. Subminiature surface mounting. [See More]

• Package Type: SOT23; SOT23

• MOSFET Operating Mode: Enhancement

MOSFET N-Channel 100V 0.17A SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 100

Small Signal Field-Effect Transistor, 0.26A, 60V, N-Channel, MOSFET, TO-236 [See More]

• Package Type: SOT23; SOT-23 3
• Packing Method: Tape Reel; Tape & Reel

• Polarity: N-Channel

Win Source Part Number: 972303-SIL2623A-TP. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). FET Type: 2 P-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 30V. Current -... [See More]

• Package Type: SOT3; SOT23
• T_J: -55 to 150

• Polarity: P-Channel

60V Single N-Channel StrongIRFET ™ Power MOSFET in a SOT-23 package. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio... [See More]

• Package Type: SOT23; SOT23
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 1 to 2.5

MOSFET N/P-CH 20V 1.5A TSOP-6 [See More]

• Package Type: SOT23; SOT-23-6 Thin, TSOT-23-6
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: P-Channel; N and P-Channel Complementary
• V_(BR)DSS: 20

MOSFET N-Channel 60V 0.5A SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 60

BSS126 - Small Signal N-Channel MOSFET [See More]

• Package Type: SOT23; SOT-23-3
• Packing Method: Tape Reel; Tape & Reel

• Polarity: N-Channel

Win Source Part Number: 1338832-DMC2710UVT-7. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays. Package: Tape & Reel. Standard Package: 3,000. Technology: MOSFET (Metal Oxide). Drain to Source Voltage (Vdss): 20V. Power - Max: 500mW (Ta). [See More]

• Package Type: SOT3; SOT23
• T_J: -55 to 150

• Polarity: P-Channel

MOSFET BVDSS: 8V~24V TSOT26 T &R [See More]

• Package Type: SOT23; SOT26; SOT-23-6 Thin, TSOT-23-6
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: P-Channel; N and P-Channel Complementary
• V_(BR)DSS: 12 to 20

MOSFET N-Channel 50V 0.2A SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 50

P-Channel Silicon MOSFET [See More]

• Package Type: SOT23; SC-59, TO-236, SOT-23
• Packing Method: Tape Reel; Tape & Reel

• Polarity: P-Channel

Win Source Part Number: 1351880-SIL2300A-TP. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays. Package: Tape & Reel. Standard Package: 3,000. Drain to Source Voltage (Vdss): 20V. Power - Max: 1.5W. Configuration: 2 N-Channel (Dual) Common Drain. [See More]

• Package Type: SOT3; SOT23
• T_J: -55 to 150

• Polarity: N-Channel

MOSFET BVDSS: 8V 24V TSOT26 [See More]

• Package Type: SOT23; SOT-23-6 Thin, TSOT-23-6
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: P-Channel; N and P-Channel Complementary
• V_(BR)DSS: 20

MOSFET P-Channel 20V 3.2A SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: P-Channel
• V_(BR)DSS: 20

N-Channel Silicon MOSFET [See More]

• Package Type: SOT23; SOT-23-5

• Polarity: N-Channel

Win Source Part Number: 1353675-SIL2308-TP. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays. Temperature Range - Operating: -55 °C ~ 150 °C (TJ). Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited). Mfr: Micro Commercial Co. [See More]

• Package Type: SOT3; SOT23
• T_J: -55 to 150

• Polarity: P-Channel

MOSFET N/P-CH 20V SOT26 [See More]

• Package Type: SOT23; SOT26; SOT-23-6
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: P-Channel; N and P-Channel
• V_(BR)DSS: 20

MOSFET N-Channel 30V 0.85A TO236AB [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 30

P-Channel Silicon MOSFET General-Purpose Switching Device Applications [See More]

• Package Type: SOT23; SOT-23-6
• Packing Method: Tape Reel; Tape & Reel

• Polarity: P-Channel

Win Source Part Number: 1376898-DMC3060LVT-7. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays. Temperature Range - Operating: -55 °C ~ 150 °C (TJ). Fake Threat In the Open Market: 39 pct. MSL Level: 1 (Unlimited). Mfr: Diodes Incorporated. [See More]

• Package Type: SOT3; SOT23
• T_J: -55 to 150

• Polarity: P-Channel

MOSFET 2N-CH 100V 1A SSOT-6 [See More]

• Package Type: SOT23; SOT-23-6 Thin, TSOT-23-6
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; 2 N-Channel (Dual)
• V_(BR)DSS: 100

MOSFET,n-channel,60V,360mA,SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 60

P-Channel PowerTrench MOSFET 30V [See More]

• Package Type: SOT23; TSOT-23-6
• Packing Method: Tape Reel; Tape & Reel

• Polarity: P-Channel

Win Source Part Number: 1079378-MMBFJ212. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel (TR). Standard Package: 3,000. Voltage - Rated: 25 V. Transistor Type: N-Channel JFET. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device... [See More]

• Package Type: SOT3; SOT23

• Polarity: N-Channel

MOSFET 20V 1.3A/1.1A SOT23-6L [See More]

• Package Type: SOT23; SOT-23-6
• V_(BR)DSS: 20

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 1300

MOSFET,n-channel,100V,150mA,3.5ohm,SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 100

HEXFET Power MOSFET [See More]

• Package Type: SOT23; Micro3 (SOT-23)

• Packing Method: Tape Reel; Tape & Reel

Win Source Part Number: 1107317-ON5520,215. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel (TR). Standard Package: 3,000. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: SOT-23 (TO-236AB). Alternative Parts... [See More]

• Package Type: SOT3; SOT23

MOSFET N+P-CH 30V 5.6A/4.2A SOT- [See More]

• Package Type: SOT23; SOT-23-6
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; P-Channel; 1 N-Channel, 1 P-Channel
• V_(BR)DSS: 30

MOSFET P-Channel 20V 3.9A TO236AB [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: P-Channel
• V_(BR)DSS: 20

MAX4427 Dual High-Speed 1.5A Mosfet Driver [See More]

• Package Type: SOT23; TSOT-23-5

Win Source Part Number: 971592-BF999E6433HTMA1. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel (TR). Standard Package: 10,000. Voltage - Rated: 20 V. Frequency: 45MHz. Current - Test: 10 mA. Gain: 27dB. Transistor Type: N-Channel. Voltage -... [See More]

• Package Type: SOT3; SOT23

• Polarity: N-Channel

MOSFET 2P-CH 20V 2.9A 6-TSOP [See More]

• Package Type: SOT23; SOT-23-6 Thin, TSOT-23-6
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: P-Channel; 2 P-Channel (Dual)
• V_(BR)DSS: 20

MOSFET N-Channel 60V 0.3A TO236AB [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 60

Win Source Part Number: 1027468-DMG3406L-13. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 10,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 30 V. [See More]

• Package Type: SOT3; SOT23
• P_D: 770

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET 50V 0.51A SOT23-6 [See More]

• Package Type: SOT23; SOT-23-6
• I_DSS: 510

• V_(BR)DSS: 50
• T_J: -55 to 150

MOSFET N-Channel 100V 0.19A TO236AB [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 100

Win Source Part Number: 1036391-2N7002KA-TP. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 60 V. [See More]

• Package Type: SOT3; SOT23
• P_D: 350

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET 2N-CH 20V 3A 6TSOP [See More]

• Package Type: SOT23; SOT-23-6 Thin, TSOT-23-6
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; 2 N-Channel (Dual)
• V_(BR)DSS: 20

MOSFET N-Channel 25V 0.68A SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 25

Win Source Part Number: 1038106-XP232N0301TR-G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 30 V. [See More]

• Package Type: SOT3; SOT23
• P_D: 400

• Polarity: N-Channel
• T_J: 150

MOSFET 2N-CH 30V 2A TSMT5 [See More]

• Package Type: SOT23; SOT-23-5 Thin, TSOT-23-5
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; 2 N-Channel (Dual) Common Source
• V_(BR)DSS: 30

MOSFET N-Ch 60V 380mA Small Signal SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 60

Win Source Part Number: 1049676-BSH205,215. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to Source Voltage (Vdss): 12 V. Current... [See More]

• Package Type: SOT3; SOT23
• P_D: 417

• Polarity: P-Channel
• T_J: -55 to 150

MOSFET 2P-CH 12V 2A TSMT6 [See More]

• Package Type: SOT23; SOT-23-6 Thin, TSOT-23-6
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: P-Channel; 2 P-Channel (Dual)
• V_(BR)DSS: 12

MOSFET N-Ch 30V 0.56A Small Signal SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 30

Win Source Part Number: 1049720-BSS123ATA. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 100 V. Current... [See More]

• Package Type: SOT3; SOT23
• P_D: 360

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET N/P-CH 30V 6TSOP [See More]

• Package Type: SOT23; SOT-23-6 Thin, TSOT-23-6
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: P-Channel; N and P-Channel
• V_(BR)DSS: 30

MOSFET N-Channel 30V 2.5A SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 30

Win Source Part Number: 1052678-CMPDM7002AG TR PBFREE. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 60... [See More]

• Package Type: SOT3; SOT23
• P_D: 350

• Polarity: N-Channel
• T_J: -65 to 150

DUAL N-CHANNEL MOSFET,SOT23-6L [See More]

• Package Type: SOT23; SOT-23-6
• V_(BR)DSS: 20

• Polarity: N-Channel; 2 N-Channel (Dual) Common Drain
• I_DSS: 7000

MOSFET N-Ch 60V 115mA Small Signal SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 60

Win Source Part Number: 1055746-DMG3402LQ-7. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to... [See More]

• Package Type: SOT3; SOT23
• P_D: 1400

• Polarity: N-Channel
• T_J: -55 to 150

DUAL P-CHANNEL 30-V (D-S) 175C M [See More]

• Package Type: SOT23; SOT-23-6 Thin, TSOT-23-6
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: P-Channel; 2 P-Channel (Dual)
• V_(BR)DSS: 30

MOSFET P-Channel 20V 0.9A SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: P-Channel
• V_(BR)DSS: 20

Win Source Part Number: 1055760-DMN24H3D5L-7. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 240 V. [See More]

• Package Type: SOT3; SOT23
• P_D: 760

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET 2N-CH 20V 1.7A SOT-26 [See More]

• Package Type: SOT23; SOT-23-6
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; 2 N-Channel (Dual)
• V_(BR)DSS: 20

MOSFET N-Channel 100V 0.17A SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 100

Win Source Part Number: 1055766-DMN3023L-13. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel (TR). Standard Package: 10,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 30 V. [See More]

• Package Type: SOT3; SOT23
• P_D: 900

• Polarity: N-Channel
• T_J: -55 to 155

RF MOSFET N-CH JFET 5V 3CP [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• Transistor Technology / Material: JFET

• Polarity: N-Channel; N-Channel

MOSFET N-Channel 20V 4.2A SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 20

Win Source Part Number: 1055767-DMN30H4D1S-7. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 300 V. [See More]

• Package Type: SOT3; SOT23
• P_D: 360

• Polarity: N-Channel
• T_J: -55 to 150

JFET N-CH 20V 25MA SOT23 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• Transistor Technology / Material: JFET

• Polarity: N-Channel; N-Channel

MOSFET N-Channel 20V 6.4A SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 20

Win Source Part Number: 1055771-DMN4035LQ-7. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to... [See More]

• Package Type: SOT3; SOT23
• P_D: 720

• Polarity: N-Channel
• T_J: -55 to 150

RF MOSFET N-CH JFET 15V SOT23-3 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• Transistor Technology / Material: JFET

• Polarity: N-Channel; N-Channel

MOSFET P-Channel 20V 4.2A SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: P-Channel
• V_(BR)DSS: 20

Win Source Part Number: 1055772-DMN53D0LQ-13. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 10,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain... [See More]

• Package Type: SOT3; SOT23
• P_D: 370

• Polarity: N-Channel
• T_J: -55 to 150

JFET N-CH 30V 15MA SOT23 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• Transistor Technology / Material: JFET

• Polarity: N-Channel; N-Channel

MOSFET P-Channel 30V 3.8A SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: P-Channel
• V_(BR)DSS: 30

Win Source Part Number: 1055777-DMN63D8L-13. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel (TR). Standard Package: 10,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 30 V. [See More]

• Package Type: SOT3; SOT23
• P_D: 350

• Polarity: N-Channel
• T_J: -55 to 150

N60V,RD(MAX) <100M@10V,RD(MAX) <12 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 60

MOSFET,N-Ch,Enhancement,60V,0.38A,SOT23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 60

Win Source Part Number: 1055792-DMP3097LQ-7. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to... [See More]

• Package Type: SOT3; SOT23
• P_D: 1000

• Polarity: P-Channel
• T_J: -55 to 150

N20V, 6A,RD <27M@4.5V,VTH0.5V~0.9 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 20

N-Channel Enhancement MOSFET SOT-23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 50

Win Source Part Number: 1055807-DMPH6250S-7. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to... [See More]

• Package Type: SOT3; SOT23
• P_D: 920

• Polarity: P-Channel
• T_J: -55 to 175

S0T-23 MOSFETS ROHS [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 60

P-Channel Enhancement MOSFET SOT-23 [See More]

• Package Type: SOT23; SOT-23
• MOSFET Operating Mode: Enhancement

• Polarity: P-Channel
• V_(BR)DSS: 30

Win Source Part Number: 1055808-DMPH6250SQ-7. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to... [See More]

• Package Type: SOT3; SOT23
• P_D: 920

• Polarity: P-Channel
• T_J: -55 to 175

SOT-23 N 60V 0.34A Transistors [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 60

Karl Kruse  is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

• Package Type: SOT23

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Package Type: SOT23; SOT-23
• V_(BR)DSS: 50

• Polarity: N-Channel
• I_DSS: 200

N60V,RD(MAX) <100M@10V,RD(MAX) <12 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 3000

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Package Type: SOT23; SOT-23
• V_(BR)DSS: 50

• Polarity: N-Channel
• I_DSS: 200

20V 6A 22m Ω@4.5V,4.5A 2W 1.5V@250uA 2PCSNChannel(Common Drain) SOT-23-6 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_GS(off): 1.5

• V_(BR)DSS: 20
• r_DS(on): 0.0220

N190V,5A,RD <540M@10V,VTH1.0V~3.0 [See More]

• Package Type: SOT23; SOT-23-6
• I_DSS: 5000

• V_(BR)DSS: 190
• Packing Method: Tape Reel; Tape & Reel (TR)

VP2110 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature... [See More]

• Package Type: SOT23
• V_GS(off): -3.5

• Polarity: P-Channel
• r_DS(on): 12

MOSFET N-CH 100V 270MA 3CPH [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.2700

• V_(BR)DSS: 100
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Package Type: SOT23; SOT-23
• V_(BR)DSS: 60

• Polarity: N-Channel
• I_DSS: 115

60V 3A 72m Ω 1.7W 1.2V@250uA null SOT-23-3L MOSFETs ROHS [See More]

• Package Type: SOT23
• V_GS(off): 1.2

• V_(BR)DSS: 60
• r_DS(on): 0.0720

DIODE [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.1700

• V_(BR)DSS: 60
• Packing Method: Bulk; Bulk

TP5322 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and... [See More]

• Package Type: SOT23; SOT89
• V_GS(off): -2.4

• Polarity: P-Channel
• r_DS(on): 12

MOSFET N-CH 60V 200MA SOT23-3 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 200

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23

N-CHANNEL MOSFET SOT-23 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 115

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Package Type: TO-92; SOT23
• V_GS(off): -2

• Polarity: P-Channel
• r_DS(on): 6

MOSFET N-CH 60V 115MA SOT23-3 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.1150

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR)

SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23

MOSFET N-CH 60V 300MA SOT23-3 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.3000

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR)

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Package Type: SOT23
• V_GS(off): -2.4

• Polarity: P-Channel
• r_DS(on): 10

MOSFET N-CH 60V 0.25A SOT23-3 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.2500

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR)

20V 6A 1.25W 27m Ω@4.5V,2.3A 650mV N Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 20

• Polarity: N-Channel
• V_GS(off): 0.6500

MOSFET N-CH 60V 115MA SOT23-3 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 115

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR)

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Package Type: SOT23
• V_GS(off): 2.4

• Polarity: N-Channel
• r_DS(on): 4

MOSFET N-CH 60V 300MA TO236AB [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 300

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

20V 2.3A 95m Ω 1V P Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 20

• Polarity: P-Channel
• V_GS(off): 1

MOSFET N-CH 60V 300MA TO236AB [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.3000

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR)

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Package Type: SOT23
• V_GS(off): 2

• Polarity: N-Channel
• r_DS(on): 15

MOSFET N-CH 60V 300MA TO236AB [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.3000

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR)

40V 5A 30m Ω 2.2V N Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 40

• Polarity: N-Channel
• V_GS(off): 2.2

MOSFET SOT-23 N Channel 30V [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 5800

• V_(BR)DSS: 30
• Packing Method: Tape Reel; Tape & Reel (TR)

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Package Type: TO-92; SOT23; SOT89
• V_GS(off): 2

• Polarity: N-Channel
• r_DS(on): 7

MOSFET N-CH 60V 260MA SOT23-3 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.2600

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR)

SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23

MOSFET N-CH 30V 3.5A SOT23-3 [See More]

• Package Type: SOT23; 3-SMD, SOT-23-3 Variant
• I_DSS: 3500

• V_(BR)DSS: 30
• Packing Method: Tape Reel; Tape & Reel (TR)

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Package Type: SOT23
• V_GS(off): 2.4

• Polarity: N-Channel
• r_DS(on): 25

MOSFET N-CH 60V 340MA SOT23 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.3400

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

60V 115mA 200mW 7.5 Ω@10V,500mA 2.5V@250uA N Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 60

• Polarity: N-Channel
• V_GS(off): 2.5

RF MOSFET 3V SOT23 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3

• Packing Method: Tape Reel; Tape & Reel (TR)

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Package Type: SOT23; SOT89
• V_GS(off): 2

• Polarity: N-Channel
• r_DS(on): 15

2SK1581-T1B-A - SWITCHING N-CHAN [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.2000

• V_(BR)DSS: 16
• Packing Method: Bulk; Bulk

60V 115mA 5 Ω@10V,500mA 225mW 2.5V@250uA N Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 60

• Polarity: N-Channel
• V_GS(off): 2.5

SMALL SIGNAL N-CHANNEL MOSFET [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.1900

• V_(BR)DSS: 100
• Packing Method: Bulk; Bulk

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Package Type: TO-92; SOT23
• V_GS(off): 2

• Polarity: N-Channel
• r_DS(on): 2.5

SMALL SIGNAL N-CHANNEL MOSFET [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.2000

• V_(BR)DSS: 30
• Packing Method: Bulk; Bulk

60V 300mA 2.2 Ω@10V,300mA 350mW 1.6V@250uA N Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 60

• Polarity: N-Channel
• V_GS(off): 1.6

MOSFET N-CH 100V 150MA TO236AB [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.1500

• V_(BR)DSS: 100
• Packing Method: Tape Reel; Tape & Reel (TR)

The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and... [See More]

• Package Type: SOT23
• V_GS(off): -3 to -0.8000

• Polarity: N-Channel
• r_DS(on): 1.4

MOSFET N-CH 30V 200MA SC59-3 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.2000

• V_(BR)DSS: 30
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

60V 340mA 900m Ω@10V,500mA 350mW N Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 60

• Polarity: N-Channel
• r_DS(on): 0.9000

100V N-CH SMALL SIGNAL MOSFET IN [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.1900

• V_(BR)DSS: 100
• Packing Method: Tape Reel; Tape & Reel (TR)

TP5335 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and... [See More]

• Package Type: SOT23
• V_GS(off): -2.4

• Polarity: P-Channel
• r_DS(on): 30

MOSFET N-CH 50V 0.1A 3CP [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• Packing Method: Tape Reel; Tape & Reel (TR)

• I_DSS: 100

SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23

MOSFET N-CH 250V 100MA SOT23-3 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.1000

• V_(BR)DSS: 250
• Packing Method: Tape Reel; Tape & Reel (TR)

N30V,RD(MAX) <27M@10V,RD(MAX) <33M [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 5600

• V_(BR)DSS: 30
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

60V 340mA 3 Ω@4.5V,200mA 350mW 2.5V@250uA N Channel SOT-23(TO-236) MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 60

• Polarity: N-Channel
• V_GS(off): 2.5

NCH 60V 650MA, SOT-23, SMALL SIG [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.6500

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

MOSFET P-CH 30V 4.2A SOT-23 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 4200

• V_(BR)DSS: 30
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

60V 115mA 5 Ω@10V,500mA 225mW 2.5V@250uA N Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 60

• Polarity: N-Channel
• V_GS(off): 2.5

MOSFET P-CH 60V 130MA SOT23 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.1300

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

MOSFET N-CH 30V 0.15A SMCP [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• Packing Method: Tape Reel; Tape & Reel (TR)

• I_DSS: 150

60V 115mA 7.5 Ω@10V,500mA 225mW 2.5V@250uA N Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 60

• Polarity: N-Channel
• V_GS(off): 2.5

MOSFET N/P-CH 20V 4A/3.3A TSOT26 [See More]

• Package Type: SOT23; SOT-23-6 Thin, TSOT-23-6
• I_DSS: 3300 to 4000

• V_(BR)DSS: 20
• Packing Method: Tape Reel; Tape & Reel (TR)

MOSFET 20V 2.9A/3A SOT23-6L [See More]

• Package Type: SOT23; SOT-23-6
• I_DSS: 2900 to 3000

• V_(BR)DSS: 20
• Packing Method: Tape Reel; Tape & Reel (TR)

60V 200mA 7.5 Ω@10V,500mA 225mW 1V@250uA N Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 60

• Polarity: N-Channel
• V_GS(off): 1

MOSFET N/P-CH 20V 1.2A TSOT23-6 [See More]

• Package Type: SOT23; SOT-23-6 Thin, TSOT-23-6
• I_DSS: 0.9000 to 1200

• V_(BR)DSS: 20
• Packing Method: Tape Reel; Tape & Reel (TR)

MOSFET N-CH 600V 40MA SOT23-3 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.0400

• V_(BR)DSS: 600
• Packing Method: Tape Reel; Tape & Reel (TR)

60V 115mA 7.5 Ω@10V,500mA 225mW 2.5V@250uA N Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 60

• Polarity: N-Channel
• V_GS(off): 2.5

MOSFET P-CH 30V 3A SC59-3 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 3000

• V_(BR)DSS: 30
• Packing Method: Tape Reel; Tape & Reel (TR)

MOSFET N-CH 30V 5.8A SOT23-3 [See More]

• Package Type: SOT23; 3-SMD, SOT-23-3 Variant
• I_DSS: 5800

• V_(BR)DSS: 30
• Packing Method: Tape Reel; Tape & Reel (TR)

60V 300mA 1.5 Ω@10V,500mA 200mW 1.5V@250uA N Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 60

• Polarity: N-Channel
• V_GS(off): 1.5

N200V,RD(MAX) <850M@10V,RD(MAX) <9 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 1700

• V_(BR)DSS: 200
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

MOSFET P-CH 30V 4A SOT23-3L [See More]

• Package Type: SOT23; 3-SMD, SOT-23-3 Variant
• I_DSS: 4000

• V_(BR)DSS: 30
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

60V 115mA 7.5 Ω@500mA,10V 200mW 2.5V@250uA null SOT-23-3L MOSFETs ROHS [See More]

• Package Type: SOT23
• V_GS(off): 2.5

• V_(BR)DSS: 60
• r_DS(on): 7.5

MOSFET P-CH 30V 4A SOT23-3 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 4000

• V_(BR)DSS: 30
• Packing Method: Cut Tape (CT),Digi-ReelR

SOT-23-3 POWER MOSFETS ROHS [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 2600

• V_(BR)DSS: 30
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

60V 115mA 7.5 Ω@10V,500mA 225mW 2.5V@250uA N Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 60

• Polarity: N-Channel
• V_GS(off): 2.5

MOSFET, SOT-23, -60V, -1.25A, 0 [See More]

• Package Type: SOT23; SOT-23-3 (TO-236)

• Packing Method: 1

30V 2.6A 130MR@10V,2.6A 1.4W 3V@ [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 2600

• V_(BR)DSS: 30
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

60V 300mA 3 Ω@10V,500mA 350mW 1V@250uA null SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_GS(off): 1

• V_(BR)DSS: 60
• r_DS(on): 3

NX6008NBK/SOT23/TO-236AB [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 0.2700

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

SOT-23-3 POWER MOSFETS ROHS [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 3000

• V_(BR)DSS: 20
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

60V 300mA 5 Ω@10V,500mA 830mW 2.5V@250uA N Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 60

• Polarity: N-Channel
• V_GS(off): 2.5

SOT-23, MOSFET [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 4300

• V_(BR)DSS: 20
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

SOT-23 POWER MOSFETS ROHS [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 2000

• V_(BR)DSS: 20
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

60V 300mA 350mW 2 Ω@10V,0.5A 1.9V@250uA N Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 60

• Polarity: N-Channel
• V_GS(off): 1.9

30V P-CHANNEL ENHANCEMENT MODE M [See More]

• Package Type: SOT23; SOT-23-6
• I_DSS: 4900

• V_(BR)DSS: 30
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

RF MOSFET JFET 10V SOT23 [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3

• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

60V 200mA 7.5 Ω@10V,500mA 225mW 1V@250uA N Channel SOT-23 MOSFETs ROHS [See More]

• Package Type: SOT23
• V_(BR)DSS: 60

• Polarity: N-Channel
• V_GS(off): 1

P-CHANNEL MOSFET [See More]

• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
• I_DSS: 3600

• V_(BR)DSS: 20
• Packing Method: Bulk; Bulk