TO-39 Metal-Oxide Semiconductor FET (MOSFET)
from RS Components, Ltd.
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, [See More]
- Package Type: TO-39; TO-39
- MOSFET Operating Mode: Enhancement
- Polarity: N-Channel
- V(BR)DSS: 90
from Win Source Electronics
Win Source Part Number: 1015800-JANTXV2N6782. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Military, MIL-PRF-19500/556. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 100 V. [See More]
- Package Type: TO-3; TO-39; SOT3
- PD: 800 to 15000
- Polarity: N-Channel
- TJ: -55 to 150
from ODG (Origin Data Global)
MOSFET N-CH 60V 990MA TO205AD [See More]
- Package Type: TO-39; TO-205AD, TO-39-3 Metal Can
- Transistor Technology / Material: MOSFET (Metal Oxide)
- Polarity: N-Channel; N-Channel
- V(BR)DSS: 60
from RS Components, Ltd.
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, [See More]
- Package Type: TO-39; TO-39
- MOSFET Operating Mode: Enhancement
- Polarity: N-Channel
- V(BR)DSS: 90
from Win Source Electronics
Win Source Part Number: 1128530-IRFF9213. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: HEXFET ®. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 150 V. Current - Continuous... [See More]
- Package Type: TO-3; TO-39; SOT3
- PD: 15000
- Polarity: N-Channel
from ODG (Origin Data Global)
MOSFET N-CH 60V 1.1A TO39 [See More]
- Package Type: TO-39; TO-205AD, TO-39-3 Metal Can
- Transistor Technology / Material: MOSFET (Metal Oxide)
- Polarity: N-Channel; N-Channel
- V(BR)DSS: 60
from Win Source Electronics
Win Source Part Number: 1209700-JANTXV2N6849. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Military, MIL-PRF-19500/564. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to Source Voltage (Vdss): 100 V. [See More]
- Package Type: TO-3; TO-39; SOT3
- PD: 800 to 25000
- Polarity: P-Channel
- TJ: -55 to 150
from ODG (Origin Data Global)
MOSFET N-CH 60V 990MA TO205AD [See More]
- Package Type: TO-39; TO-205AD, TO-39-3 Metal Can
- Transistor Technology / Material: MOSFET (Metal Oxide)
- Polarity: N-Channel; N-Channel
- V(BR)DSS: 60
from Win Source Electronics
Win Source Part Number: 1219421-JANTXV2N6790. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Military, MIL-PRF-19500/555. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 200 V. [See More]
- Package Type: TO-3; TO-39; SOT3
- PD: 800
- Polarity: N-Channel
- TJ: -55 to 150
from ODG (Origin Data Global)
MOSFET N-CH 100V 8A TO205AF [See More]
- Package Type: TO-39; TO-205AD, TO-39-3 Metal Can
- Transistor Technology / Material: MOSFET (Metal Oxide)
- Polarity: N-Channel; N-Channel
- V(BR)DSS: 100
from Win Source Electronics
Win Source Part Number: 1221867-JANTXV2N6802. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Military, MIL-PRF-19500/557. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 500 V. [See More]
- Package Type: TO-3; TO-39; SOT3
- PD: 800 to 25000
- Polarity: N-Channel
- TJ: -55 to 150
from Win Source Electronics
Manufacturer: Microsemi Corporation. Win Source Part Number: 1325279-JANTXV2N6796. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Packaging: Bulk. Standard Package: 1. Mounting: Through Hole. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source... [See More]
- Package Type: TO-3; TO-39; SOT3; TO-205AF Metal Can
- PD: 800 to 25000
- Polarity: N-Channel
- TJ: -55 to 150
from Win Source Electronics
Manufacturer: Microsemi Corporation. Win Source Part Number: 1124195-2N6782. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-39. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Package Type: TO-3; TO-39; SOT3
- V(BR)DSS: 100
- Polarity: N-Channel; N-Channel
- PD: 800 to 15000
from Win Source Electronics
Manufacturer: Microsemi Corporation. Win Source Part Number: 1124196-2N6784. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-39. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Package Type: TO-3; TO-39; SOT3
- V(BR)DSS: 200
- Polarity: N-Channel; N-Channel
- PD: 800 to 15000
from Win Source Electronics
Manufacturer: Microsemi Corporation. Win Source Part Number: 1124198-2N6788. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-39. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Package Type: TO-3; TO-39; SOT3
- V(BR)DSS: 100
- Polarity: N-Channel; N-Channel
- PD: 800
from Win Source Electronics
Manufacturer: Microsemi Corporation. Win Source Part Number: 1124199-2N6790. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-39. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Package Type: TO-3; TO-39; SOT3
- V(BR)DSS: 200
- Polarity: N-Channel; N-Channel
- PD: 800
from Win Source Electronics
Manufacturer: Microsemi Corporation. Win Source Part Number: 1124201-2N6796. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-39. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Package Type: TO-3; TO-39; SOT3
- V(BR)DSS: 100
- Polarity: N-Channel; N-Channel
- PD: 800 to 25000
from Win Source Electronics
Manufacturer: Microsemi Corporation. Win Source Part Number: 1124203-2N6798. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-39. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Package Type: TO-3; TO-39; SOT3
- MOSFET Operating Mode: Enhancement
- Polarity: N-Channel; N-Channel
- V(BR)DSS: 200
from Solid State Devices, Inc.
Features: Rugged construction. Low RDS(on) and high transconductance. Fast recovery and superior dv/dt performance. Increased reverse energy capability. Low input and transfer capacitance for easy paralleling. Hermetically sealed package. Very fast switching speed. TX, TXV, S-Level screening [See More]
- Package Type: TO-39
- V(BR)DSS: 125
- Polarity: N-Channel
- IDSS: 0.1000
from Universal Semiconductor, Inc.
Gate Standoff Voltage. Available in a wide variety of packages. Low capacitance. Low ON resistance. P-Channel Complement Available [See More]
- Package Type: TO-39
- MOSFET Operating Mode: Enhancement
- Polarity: N-Channel; P-Channel (optional feature)
- V(BR)DSS: 130
from Acme Chip Technology Co., Limited
MOSFET N-CH 90V 860MA TO39 [See More]
- Package Type: TO-39; TO-205AD, TO-39-3 Metal Can
- IDSS: 860
- V(BR)DSS: 90
- Packing Method: Tube; Tube
from Microchip Technology, Inc.
VP2206 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature... [See More]
- Package Type: TO-39; TO-92
- VGS(off): -3.5
- Polarity: P-Channel
- rDS(on): 0.9000
from Shenzhen Shengyu Electronics Technology Limited
MOSFET N-CH 60V 410MA TO39 [See More]
- Package Type: TO-39; TO-205AD, TO-39-3 Metal Can
- IDSS: 0.4100
- V(BR)DSS: 60
- Packing Method: Bag
from Microchip Technology, Inc.
VN2210 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature... [See More]
- Package Type: TO-39; TO-92
- VGS(off): 2.4
- Polarity: N-Channel
- rDS(on): 0.3500
from Shenzhen Shengyu Electronics Technology Limited
MOSFET N-CH 60V 990MA TO205AD [See More]
- Package Type: TO-39; TO-205AD, TO-39-3 Metal Can
- IDSS: 990
- V(BR)DSS: 60
- Packing Method: Tube; Tube
from Shenzhen Shengyu Electronics Technology Limited
MOSFET N-CH 100V 1.69A TO39 [See More]
- Package Type: TO-39; TO-39
- IDSS: 1690
- V(BR)DSS: 100
- Packing Method: Bulk; Bulk