N-Channel Metal-Oxide Semiconductor FET (MOSFET)
Last Updated: January 16, 2025 Reviewed by: Jon Lowy, consulting engineer
Description
An N-Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a type of transistor that uses electrons as charge carriers to facilitate current flow. It consists of a channel between a source and a drain terminal, with a gate terminal that controls the flow of current through the channel. The gate is insulated from the channel by a thin layer of silicon dioxide, which allows the gate to control the channel conductivity without direct electrical contact.
Working Principle
The N-Channel MOSFET operates by applying a positive voltage to the gate terminal, which creates an electric field that attracts electrons into the channel. This forms a conductive path between the source and the drain, allowing current to flow. The amount of current that flows is proportional to the gate voltage, making the MOSFET a voltage-controlled device. This characteristic makes N-Channel MOSFETs particularly useful in applications where precise control of current is required, such as in amplifiers and switching circuits.
Applications
N-Channel MOSFETs are widely used in various applications due to their efficiency and fast switching capabilities. Specific examples include:
- Motor Control: Often used in half-bridge or full H-bridge configurations for controlling the speed and direction of motors.
- Switching Power Supplies: Utilized for their high switching speeds, which can range from tens of kHz to MHz, making them ideal for power supply circuits.
- DC-DC Converters: Employed in power management systems to convert voltage levels efficiently.
Advantages over other Metal-Oxide Semiconductor FET (MOSFET)
N-Channel MOSFETs generally offer better performance compared to P-Channel MOSFETs in terms of electron mobility, which results in lower on-resistance and higher current-carrying capability. This makes them more efficient for high-speed and high-power applications. Additionally, N-Channel MOSFETs are often more cost-effective due to their widespread use and manufacturing efficiencies.
Limitations
One limitation of N-Channel MOSFETs is their requirement for a positive gate voltage to turn on, which can complicate circuit design in certain applications. They also tend to have higher gate capacitance, which can affect switching speed and efficiency in high-frequency applications. Furthermore, N-Channel MOSFETs can be more susceptible to damage from electrostatic discharge (ESD) due to their thin gate oxide layer.
Considerations
When selecting an N-Channel MOSFET, several factors should be considered:
- Initial Costs: N-Channel MOSFETs are generally cost-effective, but prices can vary based on specifications such as voltage and current ratings.
- Operating Expense: They offer low power loss due to their low on-resistance, which can reduce operating costs in power-sensitive applications.
- Durability: While generally robust, care must be taken to protect against ESD and over-voltage conditions to ensure long-term reliability.
- Accuracy: The precise control of current flow makes them suitable for applications requiring high accuracy.
- Replacement and Maintenance Costs: Due to their widespread use, replacement parts are readily available, and maintenance costs are typically low. However, ensuring proper thermal management is crucial to prevent overheating and extend device lifespan.
from Win Source Electronics
Manufacturer: AMIS. Category: Connectors,Interconnects. Part Status: Obsolete. FET Type: N-Channel. Technology: Schottky. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm @... [See More]
- Polarity: N-Channel
- Package Type: SOT3
from Rochester Electronics
2EDL8013 - Gate Driver N-Channel MOSFET 2 Driver Half-Bridge [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: PG-VDSON-8
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Enhancement; Enhancement Mode
- IDSS: 3
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Single, 0.3A, 60V, SOT-23 [See More]
- Polarity: N-Channel
- IDSS: 300
- V(BR)DSS: 60
- Package Type: SOT23; SOT-23
from ERSAELECTRONICS PTE. LTD.
MOSFET N-CH 100V 70A TO263-3 Product overview: IPB50N10S3L16ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets,... [See More]
- Polarity: N-Channel
- PD: 100
- MOSFET Operating Mode: Enhancement
- TJ: -55 to 175
from RS Components, Ltd.
MOSFET N-Channel 60V 3A SOT223 [See More]
- Polarity: N-Channel
- Package Type: SOT223; Sot-223
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 60V 0.3A 6TSSOP [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- V(BR)DSS: 60
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 300
from Texas Instruments
12V, N-Channel FemtoFET?MOSFET 3-PICOSTAR -55 to 150 [See More]
- Polarity: N-Channel
- IDSS: 7000
- V(BR)DSS: 12
- VGS(off): 8
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Logic level compatible. Very fast switching. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]
- Polarity: N-Channel
- V(BR)DSS: 100
- MOSFET Operating Mode: Enhancement
- IDSS: 1500
from Infineon Technologies AG
500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]
- Polarity: N-Channel; N
- VGS(off): 2.5 to 3.5
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.1900
from Win Source Electronics
Manufacturer: AMIS. Category: Connectors,Interconnects. Part Status: Obsolete. Technology: Wirewound. FET Type: N-Channel. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm @... [See More]
- Polarity: N-Channel
- Package Type: SOT3
from Rochester Electronics
Gate Driver N-Channel MOSFET 2 Driver [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: PG-WSON-8
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Enhancement; Enhancement Mode
- IDSS: 3
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Single, 0.34A, 60V, SOT-323 [See More]
- Polarity: N-Channel
- IDSS: 340
- V(BR)DSS: 60
- Package Type: SOT323; SOT-323
from RS Components, Ltd.
MOSFET N-Channel 60V 12A DPAK [See More]
- Polarity: N-Channel
- Package Type: TO-252 (DPAK); Dpak (to-252)
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 60V 340MA SOT666 [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- V(BR)DSS: 60
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 340
from Texas Instruments
CSD13383F4 12-V N-Channel FemtoFET? MOSFET 3-PICOSTAR [See More]
- Polarity: N-Channel
- IDSS: 27000
- V(BR)DSS: 12
- VGS(off): 10
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Logic-level compatible. Extended temperature range Tj = 175 °C. Trench MOSFET technology. ElectroStatic... [See More]
- Polarity: N-Channel
- V(BR)DSS: 100
- MOSFET Operating Mode: Enhancement
- IDSS: 1200
from Infineon Technologies AG
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]
- Polarity: N-Channel; N
- VGS(off): 3 to 4
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.0600
from Win Source Electronics
Manufacturer: AMIS. Category: Connectors,Interconnects. Part Status: Obsolete. FET Type: N-Channel. Technology: Schottky. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm @... [See More]
- Polarity: N-Channel
- Package Type: SOT3
from Rochester Electronics
Small Signal Field-Effect Transistor, N-Channel, MOSFET, TO-92 [See More]
- Polarity: N-Channel
- Packing Method: Bulk; Bulk
- Package Type: TO-92; TO-92
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]
- Polarity: N-Channel
- V(BR)DSS: 12
- MOSFET Operating Mode: Enhancement; Enhancement Mode
- IDSS: 40
from New Yorker Electronics Co., Inc.
MOSFET, N-CH, Single, 600mA, 30V, SOT-523 [See More]
- Polarity: N-Channel
- IDSS: 600
- V(BR)DSS: 30
- Package Type: SOT-523
from RS Components, Ltd.
STD20NF06T4,MOSFET N-Ch 60V 24A DPAK [See More]
- Polarity: N-Channel
- Package Type: TO-252 (DPAK); Dpak (to-252)
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
SOT-363 N 60V 0.34A Transistors [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- IDSS: 340
- V(BR)DSS: 60
- TJ: -55 to 150
from Texas Instruments
30V, N-Channel FemtoFET?MOSFET 3-PICOSTAR -55 to 150 [See More]
- Polarity: N-Channel
- IDSS: 10000
- V(BR)DSS: 30
- VGS(off): 12
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Logic-level compatible. Extended temperature range Tj = 175 °C. Trench MOSFET technology. ElectroStatic... [See More]
- Polarity: N-Channel
- V(BR)DSS: 100
- MOSFET Operating Mode: Enhancement
- IDSS: 1100
from Infineon Technologies AG
CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]
- Polarity: N-Channel; N
- VGS(off): 3 to 4
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.0990
from Win Source Electronics
Manufacturer: AMIS. Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors. Part Status: Obsolete. FET Type: N-Channel. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V,... [See More]
- Polarity: N-Channel
- Package Type: SOT3
- PD: 100000
from Rochester Electronics
2.5A, 500V, 1.8ohm, N-Channel, POWER MOSFET [See More]
- Polarity: N-Channel
- Package Type: TO-205AF
- rDS(on): 1.8
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]
- Polarity: N-Channel
- V(BR)DSS: 12
- MOSFET Operating Mode: Enhancement; Enhancement Mode
- IDSS: 40
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Dual, 0.34A, 60V, SOT-363 [See More]
- Polarity: N-Channel
- IDSS: 340
- V(BR)DSS: 60
- Package Type: SOT-363
from RS Components, Ltd.
MOSFET N-Channel 600V 13A TO220 [See More]
- Polarity: N-Channel
- Package Type: TO-220; To-220
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 60V 0.23A SOT-363 [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- V(BR)DSS: 60
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 230
from Texas Instruments
30V, N-Channel FemtoFET?MOSFET 3-PICOSTAR -55 to 150 [See More]
- Polarity: N-Channel
- IDSS: 5000
- V(BR)DSS: 30
- VGS(off): 12
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Very fast switching. Trench MOSFET technology. Applications. Relay... [See More]
- Polarity: N-Channel
- V(BR)DSS: 110
- MOSFET Operating Mode: Enhancement
- IDSS: 9900
from Infineon Technologies AG
Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]
- Polarity: N-Channel; N
- VGS(off): 3.5 to 4.5
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.2800
from Win Source Electronics
Win Source Part Number: 1000113-BUK9K35-60RAX. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 1,500. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Logic Level Gate. Drain... [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: -55 to 175
from Rochester Electronics
MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V, 7.5 Ohm [See More]
- Polarity: N-Channel
- Package Type: SOT23; SOT-23-3
- MOSFET Operating Mode: Enhancement
- Packing Method: Tape Reel; Tape & Reel
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]
- Polarity: N-Channel
- V(BR)DSS: 12
- MOSFET Operating Mode: Enhancement; Enhancement Mode
- IDSS: 40
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Single, 200.00A, 100V, TO-247 [See More]
- Polarity: N-Channel
- IDSS: 200000
- V(BR)DSS: 100
- Package Type: TO-247; TO-247
from RS Components, Ltd.
MOSFET N-Ch 100V 80A UltraFET II D2PAK [See More]
- Polarity: N-Channel
- Package Type: TO-263; D2pak (to-263)
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 60V 0.115A SC88-6 [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- V(BR)DSS: 60
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 115
from Texas Instruments
30V N-Channel MOSFET 8-VSONP -55 to 150 [See More]
- Polarity: N-Channel
- IDSS: 71000
- V(BR)DSS: 30
- VGS(off): 20
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Very fast switching. Ultra small package: 0.96 × 0.96 × 0.24 mm. Trench... [See More]
- Polarity: N-Channel
- V(BR)DSS: 12
- MOSFET Operating Mode: Enhancement
- IDSS: 14000
from Infineon Technologies AG
Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]
- Polarity: N-Channel; N
- VGS(off): 3 to 4
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.1250
from Win Source Electronics
Win Source Part Number: 1003416-IPG20N10S4L35AATMA1. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101, OptiMOS ™. Package: Tape & Reel (TR). Standard Package: 5,000. FET Type: 2 N-Channel (Dual). FET Feature: Logic Level Gate. [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: -55 to 175
from Rochester Electronics
Small Signal Field-Effect Transistor, 0.26A, 60V, N-Channel, MOSFET, TO-236 [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT23; SOT-23 3
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 40mA 500mW Surface Mount 8-SOIC [See More]
- Polarity: N-Channel
- V(BR)DSS: 12
- MOSFET Operating Mode: Enhancement; Enhancement Mode
- IDSS: 40
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Dual, 5.2A, 20V, DFN2x2 DUAL 2EP [See More]
- Polarity: N-Channel
- IDSS: 5200
- V(BR)DSS: 20
- Package Type: DFN2x2 DUAL 2EP
from RS Components, Ltd.
MOSFET N-Ch 55V 80A UltraFET II D2PAK [See More]
- Polarity: N-Channel
- Package Type: TO-263; D2pak (to-263)
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 60V 0.115A SOT-363 [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- V(BR)DSS: 60
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 115
from Texas Instruments
30V N-Channel MOSFET 8-VSONP -55 to 150 [See More]
- Polarity: N-Channel
- IDSS: 84000
- V(BR)DSS: 30
- VGS(off): 20
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Ultra small package: 0.98 × 1.48 × 0.35 mm. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]
- Polarity: N-Channel
- V(BR)DSS: 12
- MOSFET Operating Mode: Enhancement
- IDSS: 9600
from Infineon Technologies AG
Infineon ’s answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the new 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters... [See More]
- Polarity: N-Channel; N
- VGS(off): 2.5 to 3.5
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.3600
from Win Source Electronics
Win Source Part Number: 1003812-SP8K33HZGTB. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source... [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: 150
from Rochester Electronics
Power Field-Effect Transistor, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Package Type: TO-220; TO-220-3
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]
- Polarity: N-Channel
- V(BR)DSS: 12
- MOSFET Operating Mode: Enhancement; Enhancement Mode
- IDSS: 40
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Dual, 12A, 20V, CSP [See More]
- Polarity: N-Channel
- IDSS: 12000
- V(BR)DSS: 20
- Package Type: CSP
from RS Components, Ltd.
MOSFET N-Channel 1KV 13A SuperMESH TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 60V 0.3A SOT363 [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- V(BR)DSS: 60
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 300
from Texas Instruments
60V N-Channel NexFET Power? MOSFET 8-VSONP -55 to 150 [See More]
- Polarity: N-Channel
- IDSS: 81000
- V(BR)DSS: 60
- VGS(off): 20
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Trench MOSFET technology. Leadless ultra small and thin SMD plastic package: 1.1 × 1.0... [See More]
- Polarity: N-Channel
- V(BR)DSS: 12
- MOSFET Operating Mode: Enhancement
- IDSS: 3200
from Infineon Technologies AG
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950 V CoolMOS ™ P7 series delivers... [See More]
- Polarity: N-Channel; N
- VGS(off): 2.5 to 3.5
- Transistor Technology / Material: Si/SiC
- rDS(on): 1.2
from Win Source Electronics
Win Source Part Number: 1006355-CSD88539NDT. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: NexFET ™. Package: Tape & Reel. Standard Package: 250. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Logic Level Gate. Drain to Source... [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: -55 to 150
from Rochester Electronics
Power Field-Effect Transistor, 5A, 450V, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Package Type: LDPAK3
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]
- Polarity: N-Channel
- V(BR)DSS: 12
- MOSFET Operating Mode: Enhancement; Enhancement Mode
- IDSS: 40
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, 40V, TO-252 (DPAK) [See More]
- Polarity: N-Channel
- Package Type: TO-252 (DPAK); TO-252 (DPAK)
- V(BR)DSS: 40
- Packing Method: Tape Reel
from RS Components, Ltd.
MOSFET N-Ch 1KV 3.5A SuperMESH TO220FP [See More]
- Polarity: N-Channel
- Package Type: TO-220; To-220fp
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
2N7002HS/SOT363/SC-88 [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- IDSS: 320
- V(BR)DSS: 60
- TJ: -55 to 150
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Very low threshold voltage. Very fast switching. Trench MOSFET technology. ElectroStatic Discharge... [See More]
- Polarity: N-Channel
- V(BR)DSS: 12
- MOSFET Operating Mode: Enhancement
- IDSS: 1500
from Infineon Technologies AG
600V CoolMOS ™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220 FullPAK narrow-lead package features... [See More]
- Polarity: N-Channel; N
- VGS(off): 3.5 to 4.5
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.1250
from Win Source Electronics
Win Source Part Number: 1008793-NVMFD6H840NLT1G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 1,500. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to... [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: -55 to 175
from Rochester Electronics
Small Signal Field-Effect Transistor, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: CPH3
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
- IDSS: 3
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Single, 5.00A, 900V, TO-262 [See More]
- Polarity: N-Channel
- IDSS: 5000
- V(BR)DSS: 900
- Package Type: TO-262
from RS Components, Ltd.
MOSFET N-Ch 900V 5.8A SuperMESH TO220FP [See More]
- Polarity: N-Channel
- Package Type: TO-220; To-220fp
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
60V N-CHANNEL ENHANCEMENT MODE M [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- V(BR)DSS: 60
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 115
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Very low threshold voltage. Very fast switching. Trench MOSFET technology. ElectroStatic... [See More]
- Polarity: N-Channel
- V(BR)DSS: 12
- MOSFET Operating Mode: Enhancement
- IDSS: 1500
from Infineon Technologies AG
Infineon's answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by... [See More]
- Polarity: N-Channel; N
- VGS(off): 2.5 to 3.5
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.3600
from Win Source Electronics
Win Source Part Number: 1010105-NVMFD5853NWFT1G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 1,500. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Logic Level Gate. [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: -55 to 175
from Rochester Electronics
N-Channel Silicon MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Ammo Pack
- Package Type: SC-71-3
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
- IDSS: 3
from New Yorker Electronics Co., Inc.
MOSFET, N-CH, Single, 780mA, 30V, SOT-723 [See More]
- Polarity: N-Channel
- IDSS: 780
- V(BR)DSS: 30
- Package Type: SOT-723
from RS Components, Ltd.
MOSFET N-Channel 75V 75A D2PAK [See More]
- Polarity: N-Channel
- Package Type: TO-263; D2pak (to-263)
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 60V 280MA SOT563F [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- V(BR)DSS: 60
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 280
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Ultra small package: 0.78 × 0.78 × 0.35 mm. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]
- Polarity: N-Channel
- V(BR)DSS: 12
- MOSFET Operating Mode: Enhancement
- IDSS: 6000
from Infineon Technologies AG
CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]
- Polarity: N-Channel; N
- VGS(off): 3 to 4
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.0400
from Win Source Electronics
Win Source Part Number: 1010186-NVMFD5852NLWFT1G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 1,500. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Logic Level Gate. [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: -55 to 175
from Rochester Electronics
Power Field-Effect Transistor, 1A, 250V, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Package Type: DPAK4
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
- IDSS: 79
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Single, 5.00A, 650V, TO-251 [See More]
- Polarity: N-Channel
- IDSS: 5000
- V(BR)DSS: 650
- Package Type: TO-251
from RS Components, Ltd.
MOSFET N-Channel 800V 11A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 10.6V 8SOIC [See More]
- Polarity: N-Channel; 2 N-Channel (Dual) Matched Pair
- V(BR)DSS: 10.6
- Transistor Technology / Material: MOSFET (Metal Oxide)
- TJ: 0.0 to 70
from Nexperia B.V.
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Very fast switching. Trench MOSFET technology. 2 kV ESD protection. AEC-Q101 qualified. Applications. [See More]
- Polarity: N-Channel; P-Channel
- V(BR)DSS: 20
- MOSFET Operating Mode: Enhancement
- IDSS: 725
from Infineon Technologies AG
Infineon ’s 600V CoolMOS ™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET... [See More]
- Polarity: N-Channel; N
- VGS(off): 3.5 to 4.5
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.0400
from Win Source Electronics
Win Source Part Number: 1014180-NVMFD5C478NLT1G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 1,500. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to... [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: -55 to 175
from Rochester Electronics
N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Surface Mount 8-SOIC [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
- IDSS: 79
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Single, 150.00A, 30V, TO-220 [See More]
- Polarity: N-Channel
- IDSS: 150000
- V(BR)DSS: 30
- Package Type: TO-220; TO-220
from RS Components, Ltd.
MOSFET N-Channel 600V 5A DPAK [See More]
- Polarity: N-Channel
- Package Type: TO-252 (DPAK); Dpak (to-252)
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 30V 6.9A 8-SOIC [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- V(BR)DSS: 30
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 6900
from Nexperia B.V.
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Very fast switching. Trench MOSFET technology. ESD protection up to 2 kV. Applications. [See More]
- Polarity: N-Channel; P-Channel
- V(BR)DSS: 20
- MOSFET Operating Mode: Enhancement
- IDSS: 800
from Infineon Technologies AG
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]
- Polarity: N-Channel; N
- VGS(off): 3 to 4
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.0450
from Win Source Electronics
Win Source Part Number: 1015243-SH8K32GZETB. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 60V. Current -... [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: 150
from Rochester Electronics
Power Field-Effect Transistor, 25A, 450V, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Package Type: TO-3; TO-3P-3
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
- IDSS: 79
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Single, 100A, 60V, TO-220 [See More]
- Polarity: N-Channel
- IDSS: 100000
- V(BR)DSS: 60
- Package Type: TO-220; TO-220
from RS Components, Ltd.
MOSFET N-Channel 600V 20A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET N-CH DUAL 30V 6TSOP [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- V(BR)DSS: 30
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 3400
from Nexperia B.V.
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Very fast switching. Trench MOSFET technology. 2 kV... [See More]
- Polarity: N-Channel; P-Channel
- V(BR)DSS: 20
- MOSFET Operating Mode: Enhancement
- IDSS: 5300
from Infineon Technologies AG
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]
- Polarity: N-Channel; N
- VGS(off): 3 to 4
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.0600
from Win Source Electronics
Win Source Part Number: 1017650-NVMFD030N06CT1G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 1,500. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain... [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: -55 to 175
from Rochester Electronics
Power Field-Effect Transistor, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Package Type: FULLPAK220
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Surface Mount 8-SOIC [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
- IDSS: 79
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Dual, 0.60A, 30V, SOT-563 [See More]
- Polarity: N-Channel
- IDSS: 600
- V(BR)DSS: 30
- Package Type: SOT-563
from RS Components, Ltd.
MOSFET N-Channel 500V 21A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 20V SC70-6 [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- V(BR)DSS: 20
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 900
from Nexperia B.V.
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Very fast switching. Trench MOSFET technology. [See More]
- Polarity: N-Channel; P-Channel
- V(BR)DSS: 20
- MOSFET Operating Mode: Enhancement
- IDSS: 3500
from Infineon Technologies AG
Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]
- Polarity: N-Channel; N
- VGS(off): 3.5 to 4.5
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.1600
from Win Source Electronics
Win Source Part Number: 1020069-GWM180-004X2-SLSAM. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tube. Standard Package: 1. Mounting: SMD (SMT). FET Type: 6 N-Channel (3-Phase Bridge). FET Feature: Standard. Drain to Source Voltage (Vdss): 40V. Current... [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: -55 to 175
from Rochester Electronics
N-Channel Silicon MOSFET [See More]
- Polarity: N-Channel
- Package Type: TO-220; TO-220-3FP
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
- IDSS: 79
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Single, 3A, 100V, SOT-223 [See More]
- Polarity: N-Channel
- IDSS: 3000
- V(BR)DSS: 100
- Package Type: SOT223; SOT-223
from RS Components, Ltd.
MOSFET N-Channel 650V 33A D2PAK [See More]
- Polarity: N-Channel
- Package Type: TO-263; D2pak (to-263)
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 20V 7.9A 8TSSOP [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- V(BR)DSS: 20
- Transistor Technology / Material: MOSFET (Metal Oxide)
- TJ: -55 to 150
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Ultra small package: 0.78 x 0.78 x 0.35 mm. Trench MOSFET technology. ElectroStatic Discharge (ESD) protection... [See More]
- Polarity: N-Channel
- V(BR)DSS: 20
- MOSFET Operating Mode: Enhancement
- IDSS: 5400
from Infineon Technologies AG
The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPB65R041CFD7 in a D2PAK package is ideally suited for resonant topologies in industrial... [See More]
- Polarity: N-Channel; N
- VGS(off): 3.5 to 4.5
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.0410
from Win Source Electronics
Win Source Part Number: 1020475-BUK9K18-40E,115. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101, TrenchMOS ™. Package: Tape & Reel. Standard Package: 1,500. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature:... [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: -55 to 175
from Rochester Electronics
Power Field-Effect Transistor, 5A, 500V, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tube; Tube
- Package Type: CAN3/4
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Surface Mount 8-SOIC [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
- IDSS: 79
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Dual, 32A, 20V, DFN2x3 [See More]
- Polarity: N-Channel
- IDSS: 32000
- V(BR)DSS: 20
- Package Type: DFN2x3
from RS Components, Ltd.
MOSFET N-Channel 900V 11A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
20V COMMON-DRAIN DUAL N-CHANNEL [See More]
- Polarity: N-Channel; 2 N-Channel (Dual) Common Drain
- V(BR)DSS: 20
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 6000
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Trench MOSFET technology. Low threshold voltage. ElectroStatic Discharge (ESD) protection > 2 kV HBM. [See More]
- Polarity: N-Channel
- V(BR)DSS: 20
- MOSFET Operating Mode: Enhancement
- IDSS: 2200
from Infineon Technologies AG
Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]
- Polarity: N-Channel; N
- VGS(off): 3 to 4
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.0450
from Win Source Electronics
Win Source Part Number: 1022357-SI5948DU-T1-GE3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: TrenchFET ®. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source... [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: -55 to 150
from Rochester Electronics
Small Signal Field-Effect Transistor, 0.1A, 30V, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT323; SC-70 (SOT-323) 3
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
- IDSS: 79
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Single, 90.00A, 30V, PPAK3x3 [See More]
- Polarity: N-Channel
- IDSS: 90000
- V(BR)DSS: 30
- Package Type: PPAK3x3
from RS Components, Ltd.
MOSFET N-Channel 600V 20A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2 N-CH 30V 22A/85A 8DFN [See More]
- Polarity: N-Channel; 2 N-Channel (Dual) Asymmetrical
- V(BR)DSS: 30
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 22000
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Very fast switching. Trench MOSFET technology. ElectroStatic Discharge... [See More]
- Polarity: N-Channel
- V(BR)DSS: 20
- MOSFET Operating Mode: Enhancement
- IDSS: 1200
from Infineon Technologies AG
500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]
- Polarity: N-Channel; N
- VGS(off): 2.5 to 3.5
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.2800
from Win Source Electronics
Win Source Part Number: 1023788-IRFI4212H-117PXKMA1. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tube. Standard Package: 50. FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 100V. Current - Continuous Drain (Id) @... [See More]
- Polarity: N-Channel
- Package Type: TO-220; SOT3
- TJ: -55 to 150
from Rochester Electronics
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SIL3
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Surface Mount 8-SOIC [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
- IDSS: 79
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Single, 55A, 30V, PPAK5x6 [See More]
- Polarity: N-Channel
- IDSS: 55000
- V(BR)DSS: 30
- Package Type: PPAK5x6
from RS Components, Ltd.
MOSFET N-Channel 1.5KV 8A TO247 [See More]
- Polarity: N-Channel
- Package Type: TO-247; To-247
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 30V 4.5A [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- V(BR)DSS: 30
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 4500
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Very fast switching. Trench MOSFET technology. Small and leadless... [See More]
- Polarity: N-Channel
- V(BR)DSS: 20
- MOSFET Operating Mode: Enhancement
- IDSS: 19000
from Infineon Technologies AG
Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]
- Polarity: N-Channel; N
- VGS(off): 3.5 to 4.5
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.1450
from Win Source Electronics
Win Source Part Number: 1031783-NVMFD5C466NLT1G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 1,500. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to... [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: -55 to 175
from Rochester Electronics
Power MOSFET (N-ch 700V [See More]
- Polarity: N-Channel
- Packing Method: Tube; Tube
- Package Type: TO-220; TO-220SIS
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Precision Zero Threshold
- IDSS: 79
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Single, 8A, 100V, SOP-8 [See More]
- Polarity: N-Channel
- IDSS: 8000
- V(BR)DSS: 100
- Package Type: SOP-8
from RS Components, Ltd.
MOSFET N-Channel 600V 20A TO220FP [See More]
- Polarity: N-Channel
- Package Type: TO-220; To-220fp
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 24V 8A [See More]
- Polarity: N-Channel; 2 N-Channel (Dual) Common Drain
- V(BR)DSS: 24
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 8000
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Trench MOSFET technology. Side wettable flanks for optical solder... [See More]
- Polarity: N-Channel
- V(BR)DSS: 20
- MOSFET Operating Mode: Enhancement
- IDSS: 9000
from Infineon Technologies AG
CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]
- Polarity: N-Channel; N
- VGS(off): 3 to 4
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.1800
from Win Source Electronics
Win Source Part Number: 1034754-19MT050XF. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: HEXFET ®. Package: Bulk. Standard Package: 15. FET Type: 4 N-Channel (Half Bridge). FET Feature: Standard. Drain to Source Voltage (Vdss): 500V. Current -... [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: -40 to 150
from Rochester Electronics
N-Channel 30MA 15V MOSFET [See More]
- Polarity: N-Channel
- Package Type: SOT323; SOT-323-3
from Advanced Linear Devices, Inc.
MOSFETArray 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Surface Mount 8-SOIC [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Precision Zero Threshold
- IDSS: 79
from New Yorker Electronics Co., Inc.
MOSFET, N-CH, Single, 7A, 30V, SOT-23-6L [See More]
- Polarity: N-Channel
- IDSS: 7000
- V(BR)DSS: 30
- Package Type: SOT23; SOT-23-6L
from RS Components, Ltd.
MOSFET N-Channel 650V 35A TO-220FP [See More]
- Polarity: N-Channel
- Package Type: TO-220; To-220fp
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 40V 9A DFN5X6 [See More]
- Polarity: N-Channel; 2 N-Channel (Dual)
- V(BR)DSS: 40
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 9000
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Trench MOSFET technology. Low profile (0.25 mm). ElectroStatic Discharge (ESD) protection... [See More]
- Polarity: N-Channel
- V(BR)DSS: 20
- MOSFET Operating Mode: Enhancement
- IDSS: 1400
from Infineon Technologies AG
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]
- Polarity: N-Channel; N
- VGS(off): 3 to 4
- Transistor Technology / Material: Si/SiC
- rDS(on): 0.1800
from Win Source Electronics
Win Source Part Number: 1036436-2N7002DWAQ-7. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to... [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: -55 to 150
from Rochester Electronics
Power Field-Effect Transistor, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Bulk; Bulk
- Package Type: IPAK-3
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Precision Zero Threshold
- IDSS: 79
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Single, 150.00A, 60V, TO-263 (D2PAK) [See More]
- Polarity: N-Channel
- IDSS: 150000
- V(BR)DSS: 60
- Package Type: TO-263; TO-263 (D2PAK)
from RS Components, Ltd.
MOSFET N-Channel 650V 42A D2PAK [See More]
- Polarity: N-Channel
- Package Type: TO-263; D2pak (to-263)
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 30V 10A/13.8A 8DFN [See More]
- Polarity: N-Channel; 2 N-Channel (Dual) Asymmetrical
- V(BR)DSS: 30
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 10000
from Nexperia B.V.
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Trench MOSFET technology. Low threshold voltage. Leadless medium power SMD plastic package:... [See More]
- Polarity: N-Channel
- V(BR)DSS: 30
- MOSFET Operating Mode: Enhancement
- IDSS: 3100
from Infineon Technologies AG
600V CoolMOS ™ PFD7 superjunction MOSFET in TO-252 DPAK package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPD60R1K0PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPD60R1K0PFD7S in a TO-252 DPAK package features RDS(on) of 1,000mOhm leading to low... [See More]
- Polarity: N-Channel; N
- VGS(off): 3.5 to 4.5
- Transistor Technology / Material: Si/SiC
- rDS(on): 1
from Win Source Electronics
Win Source Part Number: 1045118-AOC3860A. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel (TR). Standard Package: 8,000. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual) Common Drain. FET Feature: Standard. Drain to Source Voltage (Vdss):... [See More]
- Polarity: N-Channel
- Package Type: SOT3
- TJ: -55 to 150
from Rochester Electronics
Power Field-Effect Transistor, N-Channel, MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SC-88/SC70-6/SOT-363 6
from Advanced Linear Devices, Inc.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Surface Mount 8-SOIC [See More]
- Polarity: N-Channel
- V(BR)DSS: 10
- MOSFET Operating Mode: Precision Zero Threshold
- IDSS: 79
from New Yorker Electronics Co., Inc.
MOSFET, N-Ch, Single, 200.00A, 100V, TOLL [See More]
- Polarity: N-Channel
- IDSS: 200000
- V(BR)DSS: 100
- Package Type: TOLL
from RS Components, Ltd.
MOSFET N-Ch 100V 80A MDmesh II DPAK [See More]
- Polarity: N-Channel
- Package Type: TO-252 (DPAK); Dpak (to-252)
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from ODG (Origin Data Global)
MOSFET 2N-CH 30V 19A/31A [See More]
- Polarity: N-Channel; 2 N-Channel (Dual) Asymmetrical
- V(BR)DSS: 30
- Transistor Technology / Material: MOSFET (Metal Oxide)
- IDSS: 19000
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Very fast switching. Ultra small package: 1.0 × 0.6 × 0.2 mm. Trench... [See More]
- Polarity: N-Channel
- V(BR)DSS: 30
- MOSFET Operating Mode: Enhancement
- IDSS: 4300
from Infineon Technologies AG
600V CoolMOS ™ PFD7 superjunction MOSFET in TO-252 DPAK package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPD60R1K5PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPD60R1K5PFD7S in a TO-252 DPAK package features RDS(on) of 1,500mOhm leading to low... [See More]
- Polarity: N-Channel; N
- VGS(off): 3.5 to 4.5
- Transistor Technology / Material: Si/SiC
- rDS(on): 1.5
from ROHM Semiconductor GmbH
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]
- Polarity: N-Channel
- IDSS: 200
- V(BR)DSS: 50
- PD: 150
from ROHM Semiconductor USA, LLC
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]
- Polarity: N-Channel
- IDSS: 200
- V(BR)DSS: 50
- PD: 150
from Utmel Electronic Limited
0.2A, 600V, 25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA [See More]
- Polarity: N-Channel
from Karl Kruse GmbH & Co. KG
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]
- Polarity: N-Channel
- Package Type: TO-220
from Littelfuse, Inc.
Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the... [See More]
- Polarity: N-Channel
- V(BR)DSS: 1200
- MOSFET Operating Mode: Enhancement
- IDSS: 70000
from Solid State Devices, Inc.
SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This... [See More]
- Polarity: N-Channel
- Package Type: Milpack III
from New Jersey Semi-Conductor Products, Inc.
Trans MOSFET N-CH 25V 0.1A 4-Pin TO-72 [See More]
- Polarity: N-Channel
- IDSS: 100
- V(BR)DSS: 25
- PD: 375
from Microchip Technology, Inc.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]
- Polarity: N-Channel
- rDS(on): 3
- VGS(off): 2
- Package Type: TO-92
from Linear Systems
The 2N4351 Single, N-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and Switching Applications. Available in TO-72 4L ROHS and Tested Die. All Linear Systems devices are available with special testing to customer... [See More]
- Polarity: N-Channel
- Package Type: TO-72
from LCSC Electronics Technology (HK) Limited
650V 10A 810m Ω@10V,5A 125W 4V@250uA N Channel ITO-220AB-3 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 4
- V(BR)DSS: 650
- rDS(on): 0.8100
from Universal Semiconductor, Inc.
Self-Aligning Silicon Gate Sturcture. Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage - 0.6V typ. [See More]
- Polarity: N-Channel
- V(BR)DSS: 25
- MOSFET Operating Mode: Enhancement
- IDSS: 50
from ROHM Semiconductor GmbH
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]
- Polarity: N-Channel
- IDSS: 200
- V(BR)DSS: 50
- PD: 150
from ROHM Semiconductor USA, LLC
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]
- Polarity: N-Channel
- IDSS: 200
- V(BR)DSS: 50
- PD: 150
from Utmel Electronic Limited
30A, 40V, 0.0095ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, LFPAK56D-8 [See More]
- Polarity: N-Channel
from Littelfuse, Inc.
Industrial grade, single switch SiC mosfets built in a TO268 high voltage package with extra clearance and creepage for harsh, dirty industrial environmental conditions. [See More]
- Polarity: N-Channel
- V(BR)DSS: 1200
- MOSFET Operating Mode: Enhancement
- IDSS: 90000
from Microchip Technology, Inc.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]
- Polarity: N-Channel
- rDS(on): 1.5
- VGS(off): 2
- Package Type: TO-92
from Linear Systems
The 3N170 Series Single, N-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and Switching Applications. Available in TO-72 4L ROHS, SOT-143 4L ROHS, and Tested Die. All Linear Systems devices are available with... [See More]
- Polarity: N-Channel
- Package Type: TO-72
from LCSC Electronics Technology (HK) Limited
650V 12A 650m Ω@10V,6A 55W 4V@250uA N Channel TO-220 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 4
- V(BR)DSS: 650
- rDS(on): 0.6500
from ROHM Semiconductor GmbH
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]
- Polarity: N-Channel
- IDSS: 200
- V(BR)DSS: 50
- PD: 200
from ROHM Semiconductor USA, LLC
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]
- Polarity: N-Channel
- IDSS: 200
- V(BR)DSS: 50
- PD: 200
from Utmel Electronic Limited
4V DRIVE NCH+PCH MOSFET [See More]
- Polarity: N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 30
from Microchip Technology, Inc.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]
- Polarity: N-Channel
- rDS(on): 1.5
- VGS(off): 2
- Package Type: SOT89
from LCSC Electronics Technology (HK) Limited
100V 15A 85m Ω 2.5V N Channel TO-252 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 2.5
- V(BR)DSS: 100
- rDS(on): 0.0850
from ROHM Semiconductor GmbH
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]
- Polarity: N-Channel
- IDSS: 200
- V(BR)DSS: 50
- PD: 150
from ROHM Semiconductor USA, LLC
ROHM recommends RE1J002YN as standard spec. [See More]
- Polarity: N-Channel
- IDSS: 200
- V(BR)DSS: 50
- PD: 150
from Utmel Electronic Limited
60V N CH MOSFET [See More]
- Polarity: N-Channel; N-CHANNEL
- rDS(on): 0.0081
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- PD: 66000
from Microchip Technology, Inc.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]
- Polarity: N-Channel
- rDS(on): 4
- VGS(off): 2.4
- Package Type: SOT23
from LCSC Electronics Technology (HK) Limited
100V 15A 55W 80m Ω@10V,10A 3V@250uA N Channel TO-252-2 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 3
- V(BR)DSS: 100
- rDS(on): 0.0800
from ROHM Semiconductor GmbH
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 200
- V(BR)DSS: 50
- PD: 150
from ROHM Semiconductor USA, LLC
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]
- Polarity: N-Channel
- IDSS: 200
- V(BR)DSS: 50
- PD: 150
from Utmel Electronic Limited
Automotive N-Channel 40 V (D-S) 175 °C MOSFET [See More]
- Polarity: N-Channel
- TJ: -55 to 175
- PD: 71000
- Packing Method: Tape Reel; Tape & Reel (TR)
from Microchip Technology, Inc.
VN2210 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature... [See More]
- Polarity: N-Channel
- rDS(on): 0.3500
- VGS(off): 2.4
- Package Type: TO-39; TO-92
from LCSC Electronics Technology (HK) Limited
100V 14.7A 37.4W 100m Ω@10V,8A 3V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 3
- V(BR)DSS: 100
- rDS(on): 0.1000
from ROHM Semiconductor GmbH
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 200
- V(BR)DSS: 50
- PD: 150
from ROHM Semiconductor USA, LLC
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 200
- V(BR)DSS: 50
- PD: 150
from Utmel Electronic Limited
Automotive N-Channel 60 V (D-S) 175 °C MOSFET [See More]
- Polarity: N-Channel
- PD: 39000
- rDS(on): 0.0300
- TJ: -55 to 175
from Microchip Technology, Inc.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient... [See More]
- Polarity: N-Channel
- rDS(on): 6
- VGS(off): 2
- Package Type: TO-92
from LCSC Electronics Technology (HK) Limited
600V 1A 11 Ω@10V,500mA 4V@250uA N Channel SOT-223 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 4
- V(BR)DSS: 600
- rDS(on): 11
from ROHM Semiconductor GmbH
The Ultra Small Package(0806size). [See More]
- Polarity: N-Channel
- IDSS: 150
- V(BR)DSS: 20
- PD: 100
from ROHM Semiconductor USA, LLC
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 5000
- V(BR)DSS: 20
- PD: 1250
from Utmel Electronic Limited
BUK9K35-60E - Dual N-channel 60 V, 35 mO logic level MOSFET [See More]
- Polarity: N-Channel
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- rDS(on): 0.0350
from Microchip Technology, Inc.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]
- Polarity: N-Channel
- rDS(on): 2.5
- VGS(off): 1
- Package Type: SOT89
from LCSC Electronics Technology (HK) Limited
600V 1A 8W 12 Ω@10V,500mA 4V@250uA N Channel SOT-223 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 4
- V(BR)DSS: 600
- rDS(on): 12
from ROHM Semiconductor GmbH
The ultra-small package(1006size) RV2C002UN is suitable for portable devices. [See More]
- Polarity: N-Channel
- IDSS: 180
- V(BR)DSS: 20
- PD: 100
from ROHM Semiconductor USA, LLC
The Ultra Small Package(0806size). [See More]
- Polarity: N-Channel
- IDSS: 150
- V(BR)DSS: 20
- PD: 100
from Utmel Electronic Limited
Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8 [See More]
- Polarity: N-Channel
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 20
from Microchip Technology, Inc.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]
- Polarity: N-Channel
- rDS(on): 6
- VGS(off): 1.6
- Package Type: TO-92
from LCSC Electronics Technology (HK) Limited
650V 1A 11 Ω@10V,500mA 4V@250uA N Channel SOT-223-4 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 4
- V(BR)DSS: 650
- rDS(on): 11
from ROHM Semiconductor GmbH
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]
- Polarity: N-Channel
- IDSS: 6500
- V(BR)DSS: 20
- PD: 1500
from ROHM Semiconductor USA, LLC
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 200
- V(BR)DSS: 50
- PD: 150
from Utmel Electronic Limited
Dual N-Channel 30 V 0.024 Ohm Surface Mount Enhancement Mode MOSFET - SOP-8 [See More]
- Polarity: N-Channel
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 30
from Microchip Technology, Inc.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]
- Polarity: N-Channel
- rDS(on): 1.3
- VGS(off): 1
- Package Type: TO-92
from LCSC Electronics Technology (HK) Limited
40V 20A 25m Ω 2.2V N Channel TO-252 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 2.2
- V(BR)DSS: 40
- rDS(on): 0.0250
from ROHM Semiconductor GmbH
Small surface mount package RQ6C050UN is suitable for Switching applications. [See More]
- Polarity: N-Channel
- IDSS: 5000
- V(BR)DSS: 20
- PD: 1250
from ROHM Semiconductor USA, LLC
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 100
- V(BR)DSS: 20
- PD: 150
from Utmel Electronic Limited
Dual N-Channel 30 V 2.2 Ohm 450 mW Silicon Surface Mount Mosfet - SOT-563 [See More]
- Polarity: N-Channel
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 30
from Microchip Technology, Inc.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]
- Polarity: N-Channel
- rDS(on): 15
- VGS(off): 2
- Package Type: SOT23
from LCSC Electronics Technology (HK) Limited
60V 20A 25m Ω 2.5V N Channel TO-252 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 2.5
- V(BR)DSS: 60
- rDS(on): 0.0250
from ROHM Semiconductor GmbH
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]
- Polarity: N-Channel
- IDSS: 2000
- V(BR)DSS: 20
- PD: 800
from ROHM Semiconductor USA, LLC
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 4000
- V(BR)DSS: 20
- PD: 1000
from Utmel Electronic Limited
FAIRCHILD SEMICONDUCTOR FCPF260N60E Power MOSFET, N Channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V [See More]
- Polarity: N-Channel; N-CHANNEL
- rDS(on): 0.2600
- V(BR)DSS: 650
- PD: 36000
from Microchip Technology, Inc.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]
- Polarity: N-Channel
- rDS(on): 6
- VGS(off): 2
- Package Type: SOT89
from LCSC Electronics Technology (HK) Limited
100V 20A 65m Ω 2.5V N Channel TO-252 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 2.5
- V(BR)DSS: 100
- rDS(on): 0.0650
from ROHM Semiconductor GmbH
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 3500
- V(BR)DSS: 20
- PD: 1000
from ROHM Semiconductor USA, LLC
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]
- Polarity: N-Channel
- IDSS: 6500
- V(BR)DSS: 20
- PD: 1500
from Utmel Electronic Limited
FDMS7650DC N-Channel MOSFET, 289 A, 30 V PowerTrench, 8-Pin Power 56 ON Semiconductor [See More]
- Polarity: N-Channel
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 30
from Microchip Technology, Inc.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient... [See More]
- Polarity: N-Channel
- rDS(on): 1.25
- VGS(off): 3
- Package Type: TO-92
from LCSC Electronics Technology (HK) Limited
20V 6A 1.25W 27m Ω@4.5V,2.3A 650mV N Channel SOT-23 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 0.6500
- V(BR)DSS: 20
- rDS(on): 0.0270
from ROHM Semiconductor GmbH
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]
- Polarity: N-Channel
- IDSS: 2000
- V(BR)DSS: 20
- PD: 1000
from ROHM Semiconductor USA, LLC
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]
- Polarity: N-Channel
- IDSS: 2000
- V(BR)DSS: 20
- PD: 800
from Utmel Electronic Limited
In a Pack of 10, N-Channel MOSFET, 17 A, 100 V, 4-Pin SOT-669 Nexperia PSMN069-100YS, 115 [See More]
- Polarity: N-Channel
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 90
from Microchip Technology, Inc.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient... [See More]
- Polarity: N-Channel
- rDS(on): 6
- VGS(off): 2
- Package Type: TO-92
from LCSC Electronics Technology (HK) Limited
20V 3A 43m Ω 1V N Channel SOT23 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 1
- V(BR)DSS: 20
- rDS(on): 0.0430
from ROHM Semiconductor GmbH
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 2500
- V(BR)DSS: 20
- PD: 900
from ROHM Semiconductor USA, LLC
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 3500
- V(BR)DSS: 20
- PD: 1000
from Utmel Electronic Limited
In a Pack of 10, N-Channel MOSFET, 400 mA, 200 V, 3-Pin SOT-89 Nexperia BSS87, 115 [See More]
- Polarity: N-Channel
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 200
from Microchip Technology, Inc.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient... [See More]
- Polarity: N-Channel
- rDS(on): 10
- VGS(off): 2
- Package Type: TO-92
from LCSC Electronics Technology (HK) Limited
40V 5A 30m Ω 2.2V N Channel SOT-23 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 2.2
- V(BR)DSS: 40
- rDS(on): 0.0300
from ROHM Semiconductor GmbH
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 40000
- V(BR)DSS: 60
- PD: 50000
from ROHM Semiconductor USA, LLC
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]
- Polarity: N-Channel
- IDSS: 1500
- V(BR)DSS: 20
- PD: 700
from Utmel Electronic Limited
In a Pack of 10, N-Channel MOSFET, 5.7 A, 600 V, 3-Pin TO-220FP Infineon IPA60R750E6XKSA1 [See More]
- Polarity: N-Channel
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- rDS(on): 0.7500
from Microchip Technology, Inc.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]
- Polarity: N-Channel
- rDS(on): 3.5
- VGS(off): 2.5
- Package Type: SOT89
from LCSC Electronics Technology (HK) Limited
20V 7.5A 12m Ω 1.2V N Channel SOT23 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 1.2
- V(BR)DSS: 20
- rDS(on): 0.0120
from ROHM Semiconductor GmbH
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 8000
- V(BR)DSS: 250
- PD: 35000
from ROHM Semiconductor USA, LLC
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 2500
- V(BR)DSS: 20
- PD: 1250
from Utmel Electronic Limited
In a Pack of 25, 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 Nexperia PMXB43UNEZ [See More]
- Polarity: N-Channel
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- rDS(on): 0.0540
from Microchip Technology, Inc.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]
- Polarity: N-Channel
- rDS(on): 7
- VGS(off): 2
- Package Type: TO-92; SOT23; SOT89
from LCSC Electronics Technology (HK) Limited
600V 2A 44W 5 Ω@10V,1A 4V@250uA N Channel TO-251(IPAK) MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 4
- V(BR)DSS: 600
- rDS(on): 5
from ROHM Semiconductor GmbH
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 500
- V(BR)DSS: 500
- PD: 2000
from ROHM Semiconductor USA, LLC
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 2500
- V(BR)DSS: 20
- PD: 900
from Utmel Electronic Limited
In a Pack of 5, N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK ON Semiconductor FDB52N20TM [See More]
- Polarity: N-Channel
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 200
from Microchip Technology, Inc.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]
- Polarity: N-Channel
- rDS(on): 25
- VGS(off): 2.4
- Package Type: SOT23
from LCSC Electronics Technology (HK) Limited
600V 2A 44W 5 Ω@10V,1A 4V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 4
- V(BR)DSS: 600
- rDS(on): 5
from ROHM Semiconductor GmbH
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]
- Polarity: N-Channel
- IDSS: 300
- V(BR)DSS: 30
- PD: 200
from ROHM Semiconductor USA, LLC
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 40000
- V(BR)DSS: 60
- PD: 50000
from Utmel Electronic Limited
In a Tube of 30, N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXYS IXFH24N80P [See More]
- Polarity: N-Channel
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 800
from Microchip Technology, Inc.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient... [See More]
- Polarity: N-Channel
- rDS(on): 1.2
- VGS(off): 2.5
- Package Type: TO-92
from LCSC Electronics Technology (HK) Limited
650V 2A 60W 3.8 Ω@10V,3.1A 4V@250uA N Channel TO-252-2 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 4
- V(BR)DSS: 650
- rDS(on): 3.8
from ROHM Semiconductor GmbH
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 1500
- V(BR)DSS: 30
- PD: 700
from ROHM Semiconductor USA, LLC
MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 9000
- V(BR)DSS: 500
- PD: 50000
from Utmel Electronic Limited
In a Tube of 50, N-Channel MOSFET, 10 A, 400 V, 3-Pin TO-220AB Vishay IRF740LCPBF [See More]
- Polarity: N-Channel
- rDS(on): 0.5500
- V(BR)DSS: 400
- PD: 125000
from Microchip Technology, Inc.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]
- Polarity: N-Channel
- rDS(on): 6
- VGS(off): 0.8000
- Package Type: SOT89
from LCSC Electronics Technology (HK) Limited
60V 200mA 400mW 5 Ω@10V,500mA 3V@1mA N Channel TO-92-3 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 3
- V(BR)DSS: 60
- rDS(on): 5
from ROHM Semiconductor GmbH
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 7000
- V(BR)DSS: 30
- PD: 2000
from ROHM Semiconductor USA, LLC
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 15000
- V(BR)DSS: 600
- PD: 120000
from Utmel Electronic Limited
IPD30N03S2L20ATMA1 N-Channel MOSFET, 30 A, 30 V OptiMOS, 3-Pin DPAK Infineon [See More]
- Polarity: N-Channel
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- PD: 60000
from Microchip Technology, Inc.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]
- Polarity: N-Channel
- rDS(on): 15
- VGS(off): 2
- Package Type: SOT23; SOT89
from LCSC Electronics Technology (HK) Limited
60V 200mA 400mW 5 Ω@10V,500mA 3V@1mA N Channel TO-92-3 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 3
- V(BR)DSS: 60
- rDS(on): 5
from ROHM Semiconductor GmbH
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 18000
- V(BR)DSS: 30
- PD: 14000
from ROHM Semiconductor USA, LLC
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 6000
- V(BR)DSS: 250
- PD: 20000
from Utmel Electronic Limited
IRFB4615PBF N-channel MOSFET Transistor, 35 A, 150 V, 3-Pin TO-220AB [See More]
- Polarity: N-Channel
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 150
from Microchip Technology, Inc.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]
- Polarity: N-Channel
- rDS(on): 12
- VGS(off): 2
- Package Type: TO-92; SOT89
from LCSC Electronics Technology (HK) Limited
60V 200mA 1.2 Ω@10V,500mA 400mW 3V@1mA N Channel TO-92-3 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 3
- V(BR)DSS: 60
- rDS(on): 1.2
from ROHM Semiconductor GmbH
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: N-Channel
- IDSS: 35000
- V(BR)DSS: 30
- PD: 22000
from ROHM Semiconductor USA, LLC
SCT3105KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed... [See More]
- Polarity: N-Channel
- IDSS: 17 to 24
- V(BR)DSS: 1200
- PD: 134000
from Utmel Electronic Limited
Microchip VN2222LL-G N-channel MOSFET Transistor; 0.23 A; 60 V; 3-Pin TO-92 [See More]
- Polarity: N-Channel
- MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 60
from Microchip Technology, Inc.
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]
- Polarity: N-Channel
- rDS(on): 5
- VGS(off): 2
- Package Type: TO-92; TO-252 (DPAK)
from LCSC Electronics Technology (HK) Limited
60V 200mA 625mW 5 Ω@10V,500mA 3V@1mA N Channel TO-92-3 MOSFETs ROHS [See More]
- Polarity: N-Channel
- VGS(off): 3
- V(BR)DSS: 60
- rDS(on): 5