TO-220 Metal-Oxide Semiconductor FET (MOSFET)

MOSFET N-Ch 1KV 3.5A SuperMESH TO220FP [See More]

• Package Type: TO-220; TO-220FP
• V_(BR)DSS: 1000

• Polarity: N-Channel
• I_DSS: 3500

Manufacturer: MagnaChip Semiconductor. Storage Condition: Dry storage cabinet & Humidity protection package. Win Source Part Number: 1171662-MMP60R360PTH. Categories: Custom Parts. Popularity: Medium. Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited. RoHS: Non-Compliant [See More]

• Package Type: TO-220; SOT3

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies. [See More]

• Package Type: TO-220; TO-220

• r_DS(on): 4

500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

MOSFET 2N-CH 150V 8.7A TO220-5 [See More]

• Package Type: TO-220; TO-220-5 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; 2 N-Channel (Dual)
• V_(BR)DSS: 150

N-Channel Silicon MOSFET [See More]

• Package Type: TO-220; TO-220-3FP

• Polarity: N-Channel

MOSFET N-Ch 900V 5.8A SuperMESH TO220FP [See More]

• Package Type: TO-220; TO-220FP
• V_(BR)DSS: 900

• Polarity: N-Channel
• I_DSS: 5800

Win Source Part Number: 1023788-IRFI4212H-117PXKMA1. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tube. Standard Package: 50. FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 100V. Current - Continuous Drain (Id) @... [See More]

• Package Type: TO-220; SOT3
• T_J: -55 to 150

• Polarity: N-Channel

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET 2N-CH 150V 8.7A TO220-5 [See More]

• Package Type: TO-220; TO-220-5 Full Pack, Formed Leads
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; 2 N-Channel (Dual)
• V_(BR)DSS: 150

Power MOSFET (N-ch 700V [See More]

• Package Type: TO-220; TO-220SIS
• Packing Method: Tube; Tube

• Polarity: N-Channel

MOSFET N-Channel 600V 20A TO220FP [See More]

• Package Type: TO-220; TO-220FP
• V_(BR)DSS: 600

• Polarity: N-Channel
• I_DSS: 20000

Win Source Part Number: 1001833-TK3A60DA(STA4,Q,M). Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: π-MOSVII. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current -... [See More]

• Package Type: TO-220; SOT3
• P_D: 30000

• Polarity: N-Channel
• T_J: 150

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET 2N-CH 200V 9.1A TO-220FP [See More]

• Package Type: TO-220; TO-220-5 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; 2 N-Channel (Dual)
• V_(BR)DSS: 200

N-Channel Silicon MOSFET General-Purpose Switching Device Application [See More]

• Package Type: TO-220; TO-220-3 Full Pack

• Polarity: N-Channel

MOSFET N-Channel 650V 35A TO-220FP [See More]

• Package Type: TO-220; TO-220FP
• V_(BR)DSS: 710

• Polarity: N-Channel
• I_DSS: 35000

Win Source Part Number: 1002752-BUK7905-40AI,127. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101, TrenchMOS ™. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. FET Feature: Current... [See More]

• Package Type: TO-220; SOT3
• P_D: 272000

• Polarity: N-Channel
• T_J: -55 to 175

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET 2N-CH 100V 11A TO220-5 [See More]

• Package Type: TO-220; TO-220-5 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; 2 N-Channel (Dual)
• V_(BR)DSS: 100

Nch Single Power Mosfet 60V 70A 5.8Mohm Mp-45F/To-220 [See More]

• Package Type: TO-220; TO-2204

• Packing Method: Tube; Tube

MOSFET N-Channel 100V 110ATO-220 [See More]

• Package Type: TO-220; TO-220
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 110000

Win Source Part Number: 1004142-SQP100P06-9M3L_GE3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101, TrenchFET ®. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to Source Voltage... [See More]

• Package Type: TO-220; SOT3
• P_D: 187000

• Polarity: P-Channel
• T_J: -55 to 175

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

RF TRANSISTOR 100W TO-220 [See More]

• Package Type: TO-220; TO-220-3

• Transistor Technology / Material: LDMOS

N-Channel Silicon MOSFET For General Purpose Switching Device Application [See More]

• Package Type: TO-220; TO-220FI(LS)-3

• Polarity: N-Channel

Power MOSFET N-channel 80V 120A TO-220AB [See More]

• Package Type: TO-220; TO-220AB
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 80

Win Source Part Number: 1005710-SQP100N04-3M6_GE3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101, TrenchFET ®. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage... [See More]

• Package Type: TO-220; SOT3
• P_D: 120000

• Polarity: N-Channel
• T_J: -55 to 175

Infineon ’s answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the new 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

N200V, 18A,RD <0.19@10V,VTH1.0V~3 [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 200

High Speed Switching N-Channel Power MosFET [See More]

• Package Type: TO-220; TO-220FN
• Packing Method: Tray

• Polarity: N-Channel

MOSFET N-chan CoolMOS 800V 6A TO220 [See More]

• Package Type: TO-220; TO-220
• V_(BR)DSS: 800

• Polarity: N-Channel
• I_DSS: 6000

Win Source Part Number: 1007025-IXFP22N65X2M. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: HiPerFET ™, Ultra X2. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. [See More]

• Package Type: TO-220; SOT3
• P_D: 37000

• Polarity: N-Channel
• T_J: -55 to 150

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950 V CoolMOS ™ P7 series delivers... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

MOSFET P-CH 60V 28A TO220F-3SG [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: P-Channel; P-Channel
• V_(BR)DSS: 60

IPA057N06 - 12V-300V N-Channel Power MOSFET [See More]

• Package Type: TO-220; TO-220-3
• Packing Method: Tube; Tube

• Polarity: N-Channel

MOSFET N-Channel 900V 15A TO220FP [See More]

• Package Type: TO-220; TO-220 FP
• V_(BR)DSS: 900

• Polarity: N-Channel
• I_DSS: 15000

Win Source Part Number: 1007500-TK13A50D(STA4,Q,M). Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: π-MOSVII. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 500 V. Current -... [See More]

• Package Type: TO-220; SOT3
• P_D: 45000

• Polarity: N-Channel
• T_J: 150

600V CoolMOS ™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220 FullPAK narrow-lead package features... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

ABU / MOSFET [See More]

• Package Type: TO-3; TO-220; TO-220-3 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 1500

MOSFET N-ch 600V 28A MDMesh DM2 TO-220FP [See More]

• Package Type: TO-220; TO-220FP
• V_(BR)DSS: 600

• Polarity: N-Channel
• I_DSS: 28000

Win Source Part Number: 1007566-IXFP18N60X. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: HiPerFET ™, Ultra X. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. [See More]

• Package Type: TO-220; SOT3
• P_D: 320000

• Polarity: N-Channel
• T_J: -55 to 150

Infineon's answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

MOSFET N-CH 100V 50A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 100

MOSFET, Fairchild, FQPF27P06 [See More]

• Package Type: TO-220; TO-220F
• V_(BR)DSS: 60

• Polarity: P-Channel
• I_DSS: 19000

Win Source Part Number: 1008962-TK3A65D(STA4,Q,M). Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: π-MOSVII. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. Current -... [See More]

• Package Type: TO-220; SOT3
• P_D: 35000

• Polarity: N-Channel
• T_J: 150

500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

MOSFET N-CH 900V 2.5A TO220SIS [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 900

MOSFET, Fairchild, HUF75545P3 [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 55

• Polarity: N-Channel
• I_DSS: 75000

Win Source Part Number: 1010026-SIHF065N60E-GE3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: E. Package: Bulk. Standard Package: 1,000. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current - Continuous... [See More]

• Package Type: TO-220; SOT3
• P_D: 39000

• Polarity: N-Channel
• T_J: -55 to 150

Optimized power MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET N-CH 600V 11A TO220 [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 600

MOSFET N-Channel 60V 70A TO220AB [See More]

• Package Type: TO-220; TO-220AB
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 60

Win Source Part Number: 1013775-BFL4037-1E. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 500 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-220; SOT3
• P_D: 2000 to 40000

• Polarity: N-Channel
• T_J: -55 to 150

Infineon ’s best price performance Superjunction MOSFET for low frequency switching applications in TO-220 package. With a design optimized for low conduction losses, the 600V CoolMOS ™ S7 Superjunction MOSFET (IPP60R065S7) in TO-220 features an optimal RDS(on) x price for low switching... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET N-CH 100V 4.7A/42A TO220 [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 100

MOSFET N-Channel 100V 56A TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 56000

Win Source Part Number: 1013896-FCPF250N65S3L1-F154. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 1,000. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. [See More]

• Package Type: TO-220; SOT3
• P_D: 31000

• Polarity: N-Channel
• T_J: -55 to 150

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET N-CH 100V 4.7A/42A TO220 [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 100

MOSFET N-Channel 500V 18A TO220F [See More]

• Package Type: TO-220; TO-220F
• V_(BR)DSS: 500

• Polarity: N-Channel
• I_DSS: 18000

Win Source Part Number: 1014772-SSP4N90A. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 900 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-220; SOT3
• P_D: 120000

• Polarity: N-Channel
• T_J: -55 to 150

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET N-CH 650V 10A TO220-3F [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 650

MOSFET P-Channel 60V 17A TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 60

• Polarity: P-Channel
• I_DSS: 17000

Win Source Part Number: 1015225-PSMN1R9-40PLQ. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 40 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-220; SOT3
• P_D: 349000

• Polarity: N-Channel
• T_J: -55 to 175

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPP65R041CFD7 in a TO-220 package is ideally suited for resonant topologies in industrial... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET N-CH 600V 11A TO220-3F [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 600

MOSFET P-Channel 60V 47A TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 60

• Polarity: P-Channel
• I_DSS: 47000

Win Source Part Number: 1016178-RJK1002DPP-A0#T2. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 25. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 100 V. Current - Continuous Drain (Id) @... [See More]

• Package Type: TO-220; SOT3
• P_D: 30000

• Polarity: N-Channel
• T_J: 150

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET N-CH 40V 160A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 40

MOSFET P-Channel 60V 30A TO220F [See More]

• Package Type: TO-220; TO-220F
• V_(BR)DSS: 60

• Polarity: P-Channel
• I_DSS: 30000

Win Source Part Number: 1017246-FCP360N65S3R0. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 800. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. Current... [See More]

• Package Type: TO-220; SOT3
• P_D: 83000

• Polarity: N-Channel
• T_J: -55 to 150

650V CoolMOS ™ N-channel automotive SJ power MOSFET CFD7A. The 190mOhm IPP65R190CFD7A in TO-220 package is part of the automotive-qualified 650V CoolMOS ™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS ™ CFD7A offers higher reliability and... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

AUTOMOTIVE HEXFET N CHANNEL [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 55

MOSFET P-Channel 60V 80A SIPMOS TO220 [See More]

• Package Type: TO-220; TO-220
• V_(BR)DSS: 60

• Polarity: P-Channel
• I_DSS: 80000

Win Source Part Number: 1018675-BFL4004-1E. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 800 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-220; SOT3
• P_D: 2000 to 36000

• Polarity: N-Channel
• T_J: -55 to 150

Summary of Features. • N-channel - Enhancement mode. • Automotive AEC Q101 qualified. • MSL1 up to 260 °C peak reflow. • 175 °C operating temperature. • Green package (lead free). • Ultra low Rds(on). • 100% Avalanche tested. Benefits. world's lowest RDS... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3

MOSFET N-CH 55V 140A TO220 [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 55

MOSFET N-Channel 250V 60A HEXFET TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 60000

Win Source Part Number: 1018797-FCPF4300N80Z. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® II. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 800 V. Current -... [See More]

• Package Type: TO-220; SOT3
• P_D: 19200

• Polarity: N-Channel
• T_J: -55 to 150

StrongIRFET ™ 2 single N-channel power MOSFET 100 V in TO-220 package. Infineon's StrongIRFET ™ 2 power MOSFET 100 V features low RDS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features. Broad availability from distribution... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.2 to 3.8

MOSFET N-CH 60V 74A TO220-3 FP [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 60

MOSFET N-Channel 60V 210A HEXFET TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 60

• Polarity: N-Channel
• I_DSS: 210000

Win Source Part Number: 1019103-R6020JNXC7G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-220; SOT3
• P_D: 76000

• Polarity: N-Channel
• T_J: -55 to 150

The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management... [See More]

• Package Type: TO-220; TO220
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2 to 4

MOSFET N-CH 55V 35A TO220-5-12 [See More]

• Package Type: TO-220; TO-220-5
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 55

MOSFET N-Ch 100V 180A HEXFET TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 180000

Win Source Part Number: 1019253-TK16A60W5,S4VX. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: DTMOSIV. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. FET Feature: Super Junction. Drain to Source Voltage... [See More]

• Package Type: TO-220; SOT3
• P_D: 40000

• Polarity: N-Channel
• T_J: 150

100V Dual N-Channel Digital Audio Power MOSFET in a TO-220 Full-Pak(Iso) package. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive... [See More]

• Package Type: TO-220; TO220
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N+N
• V_GS(off): 3 to 5

MOSFET N-CH 49V 80A TO220-7 [See More]

• Package Type: TO-220; TO-220-7
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 49

MOSFET N-Channel 55V 64A HEXFET TO220FP [See More]

• Package Type: TO-220; TO-220 FP
• V_(BR)DSS: 55

• Polarity: N-Channel
• I_DSS: 64000

Win Source Part Number: 1019260-TK7A90E,S4X. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: π-MOSVIII. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 900 V. Current -... [See More]

• Package Type: TO-220; SOT3
• P_D: 45000

• Polarity: N-Channel
• T_J: 150

IPAN60R180CM8 600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss)... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.7 to 4.7

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 55

MOSFET N-Channel 55V 110A HEXFET TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 55

• Polarity: N-Channel
• I_DSS: 110000

Win Source Part Number: 1019667-FCPF190N65FL1-F154. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: FRFET ®, SuperFET ® II. Package: Tube. Standard Package: 1,000. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage... [See More]

• Package Type: TO-220; SOT3
• P_D: 39000

• Polarity: N-Channel
• T_J: -55 to 150

IPP60R016CM8 600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.7 to 4.7

MOSFET N-CH 50V 30A TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 50

MOSFET N-Channel 100V 36A HEXFET TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 36000

Win Source Part Number: 1020722-TK370A60F,S4X(S. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: U-MOSIX. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current - Continuous... [See More]

• Package Type: TO-220; SOT3
• P_D: 45000

• Polarity: N-Channel
• T_J: 150

950 V CoolMOS ™ PFD7 superjunction MOSFET in TO-220-3 package. The 950 V CoolMOS ™ PFD7 superjunction MOSFET (IPA95R130PFD7) complements the CoolMOS ™ 7 offering for high-power lighting and industrial SMPS applications. The IPA95R130PFD7 in the TO-220-3 package features RDS(on) of... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

MOSFET N-CH 200V 21A TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 200

MOSFET N-Channel 60V 160A HEXFET TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 60

• Polarity: N-Channel
• I_DSS: 160000

Win Source Part Number: 1022324-R6025JNXC7G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-220; SOT3
• P_D: 85000

• Polarity: N-Channel
• T_J: -55 to 150

OptiMOS ™ 6 power MOSFET 150 V normal level in TO-220 package. IPP029N15NM6 OptiMOS ™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS ™ 6 150 V technology was designed to fulfill the requirements of both high and low... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET N-CH 200V 14.5A TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 200

MOSFET P-CH 160V 7A TO3P [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 7000

• V_(BR)DSS: 160
• Packing Method: Tube; Tube

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Package Type: TO-220; TO-220FM
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 8000

MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market. [See More]

• Package Type: TO-220; TO-220FM
• V_(BR)DSS: 500

• Polarity: N-Channel
• I_DSS: 5000

Karl Kruse  is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

• Package Type: TO-220

• Polarity: N-Channel

650V 10A 810m Ω@10V,5A 125W 4V@250uA N Channel ITO-220AB-3 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_(BR)DSS: 650

• Polarity: N-Channel
• V_GS(off): 4

MOSFET P-CH TO220NIS [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• Packing Method: Bulk; Bulk

• I_DSS: 5000

MOSFET P-CH 60V 14A TO220NIS [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 14000

• V_(BR)DSS: 60
• Packing Method: Bulk; Bulk

MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market. [See More]

• Package Type: TO-220; TO-220FM
• V_(BR)DSS: 500

• Polarity: N-Channel
• I_DSS: 9000

650V 12A 650m Ω@10V,6A 55W 4V@250uA N Channel TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_(BR)DSS: 650

• Polarity: N-Channel
• V_GS(off): 4

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-220; TO-220-3 Isolated Tab
• I_DSS: 20000

• V_(BR)DSS: 100
• Packing Method: Bulk; Bulk

MOSFET P-CH 60V 20A TO220 [See More]

• Package Type: TO-220; TO-220-3 Isolated Tab
• I_DSS: 20000

• V_(BR)DSS: 60
• Packing Method: Bulk; Bulk

TO-220F1 MOSFETs ROHS [See More]

• Package Type: TO-220

MOSFET N-CH 900V 5A TO220SIS [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 5000

• V_(BR)DSS: 900
• Packing Method: Bulk; Bulk

MOSFET P-CH 60V 12A TO220ML [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 12000

• V_(BR)DSS: 60
• Packing Method: Bulk; Bulk

TO-220F2 MOSFETs ROHS [See More]

• Package Type: TO-220

MOSFET N-CH 600V 12A TO220 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 12000

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

MOSFET P-CH 60V 28A TO220F-3SG [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 28000

• V_(BR)DSS: 60
• Packing Method: Tube; Tube

TO-220MF MOSFETs ROHS [See More]

• Package Type: TO-220

MOSFET N-CH 55V 100A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 100000

• V_(BR)DSS: 55
• Packing Method: Tube; Tube

MOSFET N-CH 1000V 4A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 4000

• V_(BR)DSS: 1000
• Packing Method: Tube; Tube

TO-220F MOSFETs ROHS [See More]

• Package Type: TO-220

MOSFET N-CH 55V 75A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 75000

• V_(BR)DSS: 55
• Packing Method: Tube; Tube

MOSFET N-CH 60V 10A TO220FN [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 10000

• V_(BR)DSS: 60
• Packing Method: Bulk; Bulk

650V 4.5A 2.1 Ω@10V,4.5A N Channel TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_(BR)DSS: 650

• Polarity: N-Channel
• r_DS(on): 2.1

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 75000

• V_(BR)DSS: 55
• Packing Method: Bulk; Bulk

ABU / MOSFET [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 2000

• V_(BR)DSS: 1500
• Packing Method: Tube; Tube

100V 160A 227W 3.5m Ω@10V,20A 3V@250uA null TO-220C MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 3

• V_(BR)DSS: 100
• r_DS(on): 0.0035

MOSFET N-CH 40V 75A TO220-5 [See More]

• Package Type: TO-220; TO-220-5
• I_DSS: 75000

• V_(BR)DSS: 40
• Packing Method: Tube; Tube

MOSFET N-CH 60V 45A TO220FL [See More]

• Package Type: TO-220; TO-220-3, Short Tab
• I_DSS: 45000

• V_(BR)DSS: 60
• Packing Method: Tube; Tube

120V 78A 96W 6.7m Ω@10V,20A 1.6V@250uA null TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 1.6

• V_(BR)DSS: 120
• r_DS(on): 0.0067

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-220; TO-220-5
• I_DSS: 75000

• V_(BR)DSS: 40
• Packing Method: Bulk; Bulk

MOSFET N-CH 100V 50A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 50000

• V_(BR)DSS: 100
• Packing Method: Bulk; Bulk

150V 78A 9.5m Ω@10V,40A 112W 2.8V@250uA null TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 2.8

• V_(BR)DSS: 150
• r_DS(on): 0.0095

MOSFET N-CH 75V 75A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 75000

• V_(BR)DSS: 75
• Packing Method: Tube; Tube

MOSFET N-CH 100V 30A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 30000

• V_(BR)DSS: 100
• Packing Method: Bulk; Bulk

150V 78A 9.5m Ω@10V,40A 112W 700mV@250uA null TO-220F MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 0.7000

• V_(BR)DSS: 150
• r_DS(on): 0.0095

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 75000

• V_(BR)DSS: 100
• Packing Method: Bulk; Bulk

MOSFET N-CH 900V 3A TO220SIS [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 3000

• V_(BR)DSS: 900
• Packing Method: Tube; Tube

30V 60A 5.7m Ω@10V,20A 51W 1.6V@250uA null TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 1.6

• V_(BR)DSS: 30
• r_DS(on): 0.0057

MOSFET, TO-220AB, 80V, 120A, N [See More]

• Package Type: TO-220; TO-220AB

• Packing Method: 250

MOSFET N-CH 30V 20A TO220FI [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 20000

• V_(BR)DSS: 30
• Packing Method: Bulk; Bulk,Bag

100V 65A 250W 20m Ω@10V,10A 3V@250uA P Channel TO-220C MOSFETs ROHS [See More]

• Package Type: TO-220
• V_(BR)DSS: 100

• Polarity: P-Channel
• V_GS(off): 3

MOSFET BVDSS: 61V~100V TO220AB T [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 99000

• V_(BR)DSS: 100
• Packing Method: Tube; Tube

MOSFET N-CH 60V 100A TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 100000

• V_(BR)DSS: 60
• Packing Method: Bulk; Bulk

600V 12A 50W 550m Ω@10V,6A 4.5V@250uA N Channel TO-220F-3 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_(BR)DSS: 600

• Polarity: N-Channel
• V_GS(off): 4.5

MOSFET N-CH 600V 20.6A TO220F-3 [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 20600

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

MOSFET N-CH 200V 18A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 18000

• V_(BR)DSS: 200
• Packing Method: Tube; Tube

TO-220AB MOSFETs ROHS [See More]

• Package Type: TO-220

MOSFET N-CH 600V 7.4A TO220F [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 7400

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

MOSFET N-CH 600V 38A TO220 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 38000

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

60V 53A P Channel TO-220AB MOSFETs ROHS [See More]

• Package Type: TO-220
• V_(BR)DSS: 60

• Polarity: P-Channel

MOSFET N-CH 40V 20A/80A TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 20000 to 80000

• V_(BR)DSS: 40
• Packing Method: Tube; Tube

MOSFET N-CH 600V 10A TO220 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 10000

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

605V 47A 191W 80m Ω 4V null TO-220F MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 4

• V_(BR)DSS: 605
• r_DS(on): 0.0800

MOSFET N-CH 60V 88A TO220F [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 88000

• V_(BR)DSS: 60
• Packing Method: Tube; Tube

MOSFET N-CH 600V 38A TO220F [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 38000

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

600V 28A 34W 140m Ω 4V TO-220F MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 4

• V_(BR)DSS: 600
• r_DS(on): 0.1400

MOSFET N-CH 500V 13A TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 13000

• V_(BR)DSS: 500
• Packing Method: Bulk; Bulk

MOSFET N-CH 600V 11A TO220-3F [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 11000

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

700V 6A 850m Ω 27W 3.5V TO-220F MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 3.5

• V_(BR)DSS: 700
• r_DS(on): 0.8500

MOSFET N-CH 500V 13A TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 13000

• V_(BR)DSS: 500
• Packing Method: Tube; Tube

MOSFET N-CH 105V 5.8/26A TO220FL [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 5800 to 26000

• V_(BR)DSS: 105
• Packing Method: Tube; Tube

800V 15A 32W 290m Ω 3.5V TO-220F MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 3.5

• V_(BR)DSS: 800
• r_DS(on): 0.2900

P-100V,-12A,RD(MAX) <200M@-10V,VT [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 12000

• V_(BR)DSS: 100
• Packing Method: Tube; Tube

MOSFET N-CH 55V 49A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 49000

• V_(BR)DSS: 55
• Packing Method: Bulk; Bulk

30V 100A 100W 4.5m Ω@10V,50A 3V@250uA N Channel TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_(BR)DSS: 30

• Polarity: N-Channel
• V_GS(off): 3

P-CH, -60V, 65A, RD(MAX) <18M@-10 [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 65000

• V_(BR)DSS: 60
• Packing Method: Tube; Tube

MOSFET N-CH 60V 74A TO220-3 FP [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 74000

• V_(BR)DSS: 60
• Packing Method: Bulk; Bulk

TO-220AB MOSFETs ROHS [See More]

• Package Type: TO-220

MOSFET N-CH 100V 116A TO-220 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 116000

• V_(BR)DSS: 100
• Packing Method: Tube; Tube

MOSFET N-CH 55V 35A TO220-5-12 [See More]

• Package Type: TO-220; TO-220-5
• I_DSS: 35000

• V_(BR)DSS: 55
• Packing Method: Tube; Tube

15A 220m Ω TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220

• r_DS(on): 0.2200

MOSFET N-CH 950V 8.7A TO220-3 [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 8700

• V_(BR)DSS: 950
• Packing Method: Tube; Tube

MOSFET N-CH 49V 80A TO220-7 [See More]

• Package Type: TO-220; TO-220-7
• I_DSS: 80000

• V_(BR)DSS: 49
• Packing Method: Tube; Tube

TO-220F-3 MOSFETs ROHS [See More]

• Package Type: TO-220

MOSFET N-CH 600V 12A TO220 [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 12000

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

MOSFET N-CH 75V 100A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 100000

• V_(BR)DSS: 75
• Packing Method: Tube; Tube

TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220

TRENCH PG-TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 44000 to 201000

• V_(BR)DSS: 40
• Packing Method: Tube; Tube