TO-220 Metal-Oxide Semiconductor FET (MOSFET)

Manufacturer: MagnaChip Semiconductor. Storage Condition: Dry storage cabinet & Humidity protection package. Win Source Part Number: 1171662-MMP60R360PTH. Categories: Custom Parts. Popularity: Medium. Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited. RoHS: Non-Compliant [See More]

• Package Type: TO-220; SOT3

MOSFET N-Ch 1KV 3.5A SuperMESH TO220FP [See More]

• Package Type: TO-220; TO-220FP
• V_(BR)DSS: 1000

• Polarity: N-Channel
• I_DSS: 3500

500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

MOSFET 2N-CH 150V 8.7A TO220-5 [See More]

• Package Type: TO-220; TO-220-5 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; 2 N-Channel (Dual)
• V_(BR)DSS: 150

Power Field-Effect Transistor, 16A, 60V, P-Channel, MOSFET [See More]

• Package Type: TO-220; TO-220-3

• Polarity: P-Channel

Win Source Part Number: 1023788-IRFI4212H-117PXKMA1. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tube. Standard Package: 50. FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 100V. Current - Continuous Drain (Id) @... [See More]

• Package Type: TO-220; SOT3
• T_J: -55 to 150

• Polarity: N-Channel

MOSFET N-Ch 900V 5.8A SuperMESH TO220FP [See More]

• Package Type: TO-220; TO-220FP
• V_(BR)DSS: 900

• Polarity: N-Channel
• I_DSS: 5800

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET 2N-CH 150V 8.7A TO220-5 [See More]

• Package Type: TO-220; TO-220-5 Full Pack, Formed Leads
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; 2 N-Channel (Dual)
• V_(BR)DSS: 150

N-Channel Silicon MOSFET [See More]

• Package Type: TO-220; TO-220-3FP

• Polarity: N-Channel

Win Source Part Number: 1001833-TK3A60DA(STA4,Q,M). Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: π-MOSVII. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current -... [See More]

• Package Type: TO-220; SOT3
• P_D: 30000

• Polarity: N-Channel
• T_J: 150

MOSFET N-Channel 600V 20A TO220FP [See More]

• Package Type: TO-220; TO-220FP
• V_(BR)DSS: 600

• Polarity: N-Channel
• I_DSS: 20000

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET 2N-CH 200V 9.1A TO-220FP [See More]

• Package Type: TO-220; TO-220-5 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; 2 N-Channel (Dual)
• V_(BR)DSS: 200

Power MOSFET (N-ch 700V [See More]

• Package Type: TO-220; TO-220SIS
• Packing Method: Tube; Tube

• Polarity: N-Channel

Win Source Part Number: 1002752-BUK7905-40AI,127. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101, TrenchMOS ™. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. FET Feature: Current... [See More]

• Package Type: TO-220; SOT3
• P_D: 272000

• Polarity: N-Channel
• T_J: -55 to 175

MOSFET N-Channel 650V 35A TO-220FP [See More]

• Package Type: TO-220; TO-220FP
• V_(BR)DSS: 710

• Polarity: N-Channel
• I_DSS: 35000

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET 2N-CH 100V 11A TO220-5 [See More]

• Package Type: TO-220; TO-220-5 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; 2 N-Channel (Dual)
• V_(BR)DSS: 100

N-Channel Silicon MOSFET General-Purpose Switching Device Application [See More]

• Package Type: TO-220; TO-220-3 Full Pack

• Polarity: N-Channel

Win Source Part Number: 1004142-SQP100P06-9M3L_GE3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101, TrenchFET ®. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to Source Voltage... [See More]

• Package Type: TO-220; SOT3
• P_D: 187000

• Polarity: P-Channel
• T_J: -55 to 175

MOSFET N-Channel 100V 110ATO-220 [See More]

• Package Type: TO-220; TO-220
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 110000

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

RF TRANSISTOR 100W TO-220 [See More]

• Package Type: TO-220; TO-220-3

• Transistor Technology / Material: LDMOS

Nch Single Power Mosfet 60V 70A 5.8Mohm Mp-45F/To-220 [See More]

• Package Type: TO-220; TO-2204

• Packing Method: Tube; Tube

Win Source Part Number: 1005710-SQP100N04-3M6_GE3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101, TrenchFET ®. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage... [See More]

• Package Type: TO-220; SOT3
• P_D: 120000

• Polarity: N-Channel
• T_J: -55 to 175

Power MOSFET N-channel 80V 120A TO-220AB [See More]

• Package Type: TO-220; TO-220AB
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 80

Infineon ’s answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the new 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

N200V, 18A,RD <0.19@10V,VTH1.0V~3 [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 200

N-Channel Silicon MOSFET For General Purpose Switching Device Application [See More]

• Package Type: TO-220; TO-220FI(LS)-3

• Polarity: N-Channel

Win Source Part Number: 1007025-IXFP22N65X2M. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: HiPerFET ™, Ultra X2. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. [See More]

• Package Type: TO-220; SOT3
• P_D: 37000

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET N-chan CoolMOS 800V 6A TO220 [See More]

• Package Type: TO-220; TO-220
• V_(BR)DSS: 800

• Polarity: N-Channel
• I_DSS: 6000

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950 V CoolMOS ™ P7 series delivers... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

MOSFET P-CH 60V 28A TO220F-3SG [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: P-Channel; P-Channel
• V_(BR)DSS: 60

High Speed Switching N-Channel Power MosFET [See More]

• Package Type: TO-220; TO-220FN
• Packing Method: Tray

• Polarity: N-Channel

Win Source Part Number: 1007500-TK13A50D(STA4,Q,M). Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: π-MOSVII. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 500 V. Current -... [See More]

• Package Type: TO-220; SOT3
• P_D: 45000

• Polarity: N-Channel
• T_J: 150

MOSFET N-Channel 900V 15A TO220FP [See More]

• Package Type: TO-220; TO-220 FP
• V_(BR)DSS: 900

• Polarity: N-Channel
• I_DSS: 15000

600V CoolMOS ™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220 FullPAK narrow-lead package features... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

ABU / MOSFET [See More]

• Package Type: TO-3; TO-220; TO-220-3 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 1500

IPA057N06 - 12V-300V N-Channel Power MOSFET [See More]

• Package Type: TO-220; TO-220-3
• Packing Method: Tube; Tube

• Polarity: N-Channel

Win Source Part Number: 1007566-IXFP18N60X. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: HiPerFET ™, Ultra X. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. [See More]

• Package Type: TO-220; SOT3
• P_D: 320000

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET N-ch 600V 28A MDMesh DM2 TO-220FP [See More]

• Package Type: TO-220; TO-220FP
• V_(BR)DSS: 600

• Polarity: N-Channel
• I_DSS: 28000

Infineon's answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

MOSFET N-CH 100V 50A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 100

Win Source Part Number: 1008962-TK3A65D(STA4,Q,M). Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: π-MOSVII. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. Current -... [See More]

• Package Type: TO-220; SOT3
• P_D: 35000

• Polarity: N-Channel
• T_J: 150

MOSFET, Fairchild, FQPF27P06 [See More]

• Package Type: TO-220; TO-220F
• V_(BR)DSS: 60

• Polarity: P-Channel
• I_DSS: 19000

500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

MOSFET N-CH 900V 2.5A TO220SIS [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 900

Win Source Part Number: 1010026-SIHF065N60E-GE3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: E. Package: Bulk. Standard Package: 1,000. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current - Continuous... [See More]

• Package Type: TO-220; SOT3
• P_D: 39000

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET, Fairchild, HUF75545P3 [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 55

• Polarity: N-Channel
• I_DSS: 75000

Optimized power MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET N-CH 600V 11A TO220 [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 600

Win Source Part Number: 1013775-BFL4037-1E. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 500 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-220; SOT3
• P_D: 2000 to 40000

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET N-Channel 60V 70A TO220AB [See More]

• Package Type: TO-220; TO-220AB
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 60

Infineon ’s best price performance Superjunction MOSFET for low frequency switching applications in TO-220 package. With a design optimized for low conduction losses, the 600V CoolMOS ™ S7 Superjunction MOSFET (IPP60R065S7) in TO-220 features an optimal RDS(on) x price for low switching... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET N-CH 100V 4.7A/42A TO220 [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 100

Win Source Part Number: 1013896-FCPF250N65S3L1-F154. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 1,000. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. [See More]

• Package Type: TO-220; SOT3
• P_D: 31000

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET N-Channel 100V 56A TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 56000

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET N-CH 100V 4.7A/42A TO220 [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 100

Win Source Part Number: 1014772-SSP4N90A. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 900 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-220; SOT3
• P_D: 120000

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET N-Channel 500V 18A TO220F [See More]

• Package Type: TO-220; TO-220F
• V_(BR)DSS: 500

• Polarity: N-Channel
• I_DSS: 18000

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET N-CH 650V 10A TO220-3F [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 650

Win Source Part Number: 1015225-PSMN1R9-40PLQ. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 40 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-220; SOT3
• P_D: 349000

• Polarity: N-Channel
• T_J: -55 to 175

MOSFET P-Channel 60V 17A TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 60

• Polarity: P-Channel
• I_DSS: 17000

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPP65R041CFD7 in a TO-220 package is ideally suited for resonant topologies in industrial... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET N-CH 600V 11A TO220-3F [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 600

Win Source Part Number: 1016178-RJK1002DPP-A0#T2. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 25. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 100 V. Current - Continuous Drain (Id) @... [See More]

• Package Type: TO-220; SOT3
• P_D: 30000

• Polarity: N-Channel
• T_J: 150

MOSFET P-Channel 60V 47A TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 60

• Polarity: P-Channel
• I_DSS: 47000

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET N-CH 40V 160A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 40

Win Source Part Number: 1017246-FCP360N65S3R0. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 800. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. Current... [See More]

• Package Type: TO-220; SOT3
• P_D: 83000

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET P-Channel 60V 30A TO220F [See More]

• Package Type: TO-220; TO-220F
• V_(BR)DSS: 60

• Polarity: P-Channel
• I_DSS: 30000

650V CoolMOS ™ N-channel automotive SJ power MOSFET CFD7A. The 190mOhm IPP65R190CFD7A in TO-220 package is part of the automotive-qualified 650V CoolMOS ™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS ™ CFD7A offers higher reliability and... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

AUTOMOTIVE HEXFET N CHANNEL [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 55

Win Source Part Number: 1018675-BFL4004-1E. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 800 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-220; SOT3
• P_D: 2000 to 36000

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET P-Channel 60V 80A SIPMOS TO220 [See More]

• Package Type: TO-220; TO-220
• V_(BR)DSS: 60

• Polarity: P-Channel
• I_DSS: 80000

Summary of Features. • N-channel - Enhancement mode. • Automotive AEC Q101 qualified. • MSL1 up to 260 °C peak reflow. • 175 °C operating temperature. • Green package (lead free). • Ultra low Rds(on). • 100% Avalanche tested. Benefits. world's lowest RDS... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3

MOSFET N-CH 55V 140A TO220 [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 55

Win Source Part Number: 1018797-FCPF4300N80Z. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® II. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 800 V. Current -... [See More]

• Package Type: TO-220; SOT3
• P_D: 19200

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET N-Channel 250V 60A HEXFET TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 60000

StrongIRFET ™ 2 single N-channel power MOSFET 100 V in TO-220 package. Infineon's StrongIRFET ™ 2 power MOSFET 100 V features low RDS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features. Broad availability from distribution... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.2 to 3.8

MOSFET N-CH 60V 74A TO220-3 FP [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 60

Win Source Part Number: 1019103-R6020JNXC7G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-220; SOT3
• P_D: 76000

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET N-Channel 60V 210A HEXFET TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 60

• Polarity: N-Channel
• I_DSS: 210000

The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management... [See More]

• Package Type: TO-220; TO220
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2 to 4

MOSFET N-CH 55V 35A TO220-5-12 [See More]

• Package Type: TO-220; TO-220-5
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 55

Win Source Part Number: 1019253-TK16A60W5,S4VX. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: DTMOSIV. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. FET Feature: Super Junction. Drain to Source Voltage... [See More]

• Package Type: TO-220; SOT3
• P_D: 40000

• Polarity: N-Channel
• T_J: 150

MOSFET N-Ch 100V 180A HEXFET TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 180000

100V Dual N-Channel Digital Audio Power MOSFET in a TO-220 Full-Pak(Iso) package. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive... [See More]

• Package Type: TO-220; TO220
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N+N
• V_GS(off): 3 to 5

MOSFET N-CH 49V 80A TO220-7 [See More]

• Package Type: TO-220; TO-220-7
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 49

Win Source Part Number: 1019260-TK7A90E,S4X. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: π-MOSVIII. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 900 V. Current -... [See More]

• Package Type: TO-220; SOT3
• P_D: 45000

• Polarity: N-Channel
• T_J: 150

MOSFET N-Channel 55V 64A HEXFET TO220FP [See More]

• Package Type: TO-220; TO-220 FP
• V_(BR)DSS: 55

• Polarity: N-Channel
• I_DSS: 64000

IPAN60R180CM8 600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss)... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.7 to 4.7

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 55

Win Source Part Number: 1019667-FCPF190N65FL1-F154. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: FRFET ®, SuperFET ® II. Package: Tube. Standard Package: 1,000. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage... [See More]

• Package Type: TO-220; SOT3
• P_D: 39000

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET N-Channel 55V 110A HEXFET TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 55

• Polarity: N-Channel
• I_DSS: 110000

IPP60R016CM8 600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.7 to 4.7

MOSFET N-CH 50V 30A TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 50

Win Source Part Number: 1020722-TK370A60F,S4X(S. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: U-MOSIX. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current - Continuous... [See More]

• Package Type: TO-220; SOT3
• P_D: 45000

• Polarity: N-Channel
• T_J: 150

MOSFET N-Channel 100V 36A HEXFET TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 36000

950 V CoolMOS ™ PFD7 superjunction MOSFET in TO-220-3 package. The 950 V CoolMOS ™ PFD7 superjunction MOSFET (IPA95R130PFD7) complements the CoolMOS ™ 7 offering for high-power lighting and industrial SMPS applications. The IPA95R130PFD7 in the TO-220-3 package features RDS(on) of... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

MOSFET N-CH 200V 21A TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 200

Win Source Part Number: 1022324-R6025JNXC7G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-220; SOT3
• P_D: 85000

• Polarity: N-Channel
• T_J: -55 to 150

MOSFET N-Channel 60V 160A HEXFET TO220AB [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 60

• Polarity: N-Channel
• I_DSS: 160000

OptiMOS ™ 6 power MOSFET 150 V normal level in TO-220 package. IPP029N15NM6 OptiMOS ™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS ™ 6 150 V technology was designed to fulfill the requirements of both high and low... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET N-CH 200V 14.5A TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 200

Karl Kruse  is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

• Package Type: TO-220

• Polarity: N-Channel

MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market. [See More]

• Package Type: TO-220; TO-220FM
• V_(BR)DSS: 500

• Polarity: N-Channel
• I_DSS: 5000

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Package Type: TO-220; TO-220FM
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 8000

650V 10A 810m Ω@10V,5A 125W 4V@250uA N Channel ITO-220AB-3 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_(BR)DSS: 650

• Polarity: N-Channel
• V_GS(off): 4

MOSFET P-CH TO220NIS [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• Packing Method: Bulk; Bulk

• I_DSS: 5000

MOSFET P-CH 160V 7A TO3P [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 7000

• V_(BR)DSS: 160
• Packing Method: Tube; Tube

MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market. [See More]

• Package Type: TO-220; TO-220FM
• V_(BR)DSS: 500

• Polarity: N-Channel
• I_DSS: 9000

650V 12A 650m Ω@10V,6A 55W 4V@250uA N Channel TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_(BR)DSS: 650

• Polarity: N-Channel
• V_GS(off): 4

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-220; TO-220-3 Isolated Tab
• I_DSS: 20000

• V_(BR)DSS: 100
• Packing Method: Bulk; Bulk

MOSFET P-CH 60V 14A TO220NIS [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 14000

• V_(BR)DSS: 60
• Packing Method: Bulk; Bulk

TO-220F1 MOSFETs ROHS [See More]

• Package Type: TO-220

MOSFET N-CH 900V 5A TO220SIS [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 5000

• V_(BR)DSS: 900
• Packing Method: Bulk; Bulk

MOSFET P-CH 60V 20A TO220 [See More]

• Package Type: TO-220; TO-220-3 Isolated Tab
• I_DSS: 20000

• V_(BR)DSS: 60
• Packing Method: Bulk; Bulk

TO-220F2 MOSFETs ROHS [See More]

• Package Type: TO-220

MOSFET N-CH 600V 12A TO220 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 12000

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

MOSFET P-CH 60V 12A TO220ML [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 12000

• V_(BR)DSS: 60
• Packing Method: Bulk; Bulk

TO-220MF MOSFETs ROHS [See More]

• Package Type: TO-220

MOSFET N-CH 55V 100A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 100000

• V_(BR)DSS: 55
• Packing Method: Tube; Tube

MOSFET P-CH 60V 28A TO220F-3SG [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 28000

• V_(BR)DSS: 60
• Packing Method: Tube; Tube

TO-220F MOSFETs ROHS [See More]

• Package Type: TO-220

MOSFET N-CH 55V 75A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 75000

• V_(BR)DSS: 55
• Packing Method: Tube; Tube

MOSFET N-CH 1000V 4A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 4000

• V_(BR)DSS: 1000
• Packing Method: Tube; Tube

650V 4.5A 2.1 Ω@10V,4.5A N Channel TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_(BR)DSS: 650

• Polarity: N-Channel
• r_DS(on): 2.1

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 75000

• V_(BR)DSS: 55
• Packing Method: Bulk; Bulk

MOSFET N-CH 60V 10A TO220FN [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 10000

• V_(BR)DSS: 60
• Packing Method: Bulk; Bulk

100V 160A 227W 3.5m Ω@10V,20A 3V@250uA null TO-220C MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 3

• V_(BR)DSS: 100
• r_DS(on): 0.0035

MOSFET N-CH 40V 75A TO220-5 [See More]

• Package Type: TO-220; TO-220-5
• I_DSS: 75000

• V_(BR)DSS: 40
• Packing Method: Tube; Tube

ABU / MOSFET [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 2000

• V_(BR)DSS: 1500
• Packing Method: Tube; Tube

120V 78A 96W 6.7m Ω@10V,20A 1.6V@250uA null TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 1.6

• V_(BR)DSS: 120
• r_DS(on): 0.0067

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-220; TO-220-5
• I_DSS: 75000

• V_(BR)DSS: 40
• Packing Method: Bulk; Bulk

MOSFET N-CH 60V 45A TO220FL [See More]

• Package Type: TO-220; TO-220-3, Short Tab
• I_DSS: 45000

• V_(BR)DSS: 60
• Packing Method: Tube; Tube

150V 78A 9.5m Ω@10V,40A 112W 2.8V@250uA null TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 2.8

• V_(BR)DSS: 150
• r_DS(on): 0.0095

MOSFET N-CH 75V 75A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 75000

• V_(BR)DSS: 75
• Packing Method: Tube; Tube

MOSFET N-CH 100V 50A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 50000

• V_(BR)DSS: 100
• Packing Method: Bulk; Bulk

150V 78A 9.5m Ω@10V,40A 112W 700mV@250uA null TO-220F MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 0.7000

• V_(BR)DSS: 150
• r_DS(on): 0.0095

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 75000

• V_(BR)DSS: 100
• Packing Method: Bulk; Bulk

MOSFET N-CH 100V 30A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 30000

• V_(BR)DSS: 100
• Packing Method: Bulk; Bulk

30V 60A 5.7m Ω@10V,20A 51W 1.6V@250uA null TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 1.6

• V_(BR)DSS: 30
• r_DS(on): 0.0057

MOSFET, TO-220AB, 80V, 120A, N [See More]

• Package Type: TO-220; TO-220AB

• Packing Method: 250

MOSFET N-CH 900V 3A TO220SIS [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 3000

• V_(BR)DSS: 900
• Packing Method: Tube; Tube

100V 65A 250W 20m Ω@10V,10A 3V@250uA P Channel TO-220C MOSFETs ROHS [See More]

• Package Type: TO-220
• V_(BR)DSS: 100

• Polarity: P-Channel
• V_GS(off): 3

MOSFET BVDSS: 61V~100V TO220AB T [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 99000

• V_(BR)DSS: 100
• Packing Method: Tube; Tube

MOSFET N-CH 30V 20A TO220FI [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 20000

• V_(BR)DSS: 30
• Packing Method: Bulk; Bulk,Bag

600V 12A 50W 550m Ω@10V,6A 4.5V@250uA N Channel TO-220F-3 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_(BR)DSS: 600

• Polarity: N-Channel
• V_GS(off): 4.5

MOSFET N-CH 600V 20.6A TO220F-3 [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 20600

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

MOSFET N-CH 60V 100A TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 100000

• V_(BR)DSS: 60
• Packing Method: Bulk; Bulk

TO-220AB MOSFETs ROHS [See More]

• Package Type: TO-220

MOSFET N-CH 600V 7.4A TO220F [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 7400

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

MOSFET N-CH 200V 18A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 18000

• V_(BR)DSS: 200
• Packing Method: Tube; Tube

60V 53A P Channel TO-220AB MOSFETs ROHS [See More]

• Package Type: TO-220
• V_(BR)DSS: 60

• Polarity: P-Channel

MOSFET N-CH 40V 20A/80A TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 20000 to 80000

• V_(BR)DSS: 40
• Packing Method: Tube; Tube

MOSFET N-CH 600V 38A TO220 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 38000

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

605V 47A 191W 80m Ω 4V null TO-220F MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 4

• V_(BR)DSS: 605
• r_DS(on): 0.0800

MOSFET N-CH 60V 88A TO220F [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 88000

• V_(BR)DSS: 60
• Packing Method: Tube; Tube

MOSFET N-CH 600V 10A TO220 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 10000

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

600V 28A 34W 140m Ω 4V TO-220F MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 4

• V_(BR)DSS: 600
• r_DS(on): 0.1400

MOSFET N-CH 500V 13A TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 13000

• V_(BR)DSS: 500
• Packing Method: Bulk; Bulk

MOSFET N-CH 600V 38A TO220F [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 38000

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

700V 6A 850m Ω 27W 3.5V TO-220F MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 3.5

• V_(BR)DSS: 700
• r_DS(on): 0.8500

MOSFET N-CH 500V 13A TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 13000

• V_(BR)DSS: 500
• Packing Method: Tube; Tube

MOSFET N-CH 600V 11A TO220-3F [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 11000

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

800V 15A 32W 290m Ω 3.5V TO-220F MOSFETs ROHS [See More]

• Package Type: TO-220
• V_GS(off): 3.5

• V_(BR)DSS: 800
• r_DS(on): 0.2900

P-100V,-12A,RD(MAX) <200M@-10V,VT [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 12000

• V_(BR)DSS: 100
• Packing Method: Tube; Tube

MOSFET N-CH 105V 5.8/26A TO220FL [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 5800 to 26000

• V_(BR)DSS: 105
• Packing Method: Tube; Tube

30V 100A 100W 4.5m Ω@10V,50A 3V@250uA N Channel TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220
• V_(BR)DSS: 30

• Polarity: N-Channel
• V_GS(off): 3

P-CH, -60V, 65A, RD(MAX) <18M@-10 [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 65000

• V_(BR)DSS: 60
• Packing Method: Tube; Tube

MOSFET N-CH 55V 49A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 49000

• V_(BR)DSS: 55
• Packing Method: Bulk; Bulk

TO-220AB MOSFETs ROHS [See More]

• Package Type: TO-220

MOSFET N-CH 100V 116A TO-220 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 116000

• V_(BR)DSS: 100
• Packing Method: Tube; Tube

MOSFET N-CH 60V 74A TO220-3 FP [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 74000

• V_(BR)DSS: 60
• Packing Method: Bulk; Bulk

15A 220m Ω TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220

• r_DS(on): 0.2200

MOSFET N-CH 950V 8.7A TO220-3 [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 8700

• V_(BR)DSS: 950
• Packing Method: Tube; Tube

MOSFET N-CH 55V 35A TO220-5-12 [See More]

• Package Type: TO-220; TO-220-5
• I_DSS: 35000

• V_(BR)DSS: 55
• Packing Method: Tube; Tube

TO-220F-3 MOSFETs ROHS [See More]

• Package Type: TO-220

MOSFET N-CH 600V 12A TO220 [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• I_DSS: 12000

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

MOSFET N-CH 49V 80A TO220-7 [See More]

• Package Type: TO-220; TO-220-7
• I_DSS: 80000

• V_(BR)DSS: 49
• Packing Method: Tube; Tube

TO-220 MOSFETs ROHS [See More]

• Package Type: TO-220

TRENCH PG-TO220-3 [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 44000 to 201000

• V_(BR)DSS: 40
• Packing Method: Tube; Tube

MOSFET N-CH 75V 100A TO220AB [See More]

• Package Type: TO-220; TO-220-3
• I_DSS: 100000

• V_(BR)DSS: 75
• Packing Method: Tube; Tube