P-Channel Metal-Oxide Semiconductor FET (MOSFET)

Small Signal Field-Effect Transistor, P-Channel, MOSFET [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: TO-236

Summary of Features. AEC qualified. MSL1 up to 260 °C peak reflow. 175 °C operating temperature. Green package (RoHS compliant). 100% Avalanche tested. Benefits. No charge pump required for high side drive. Simple interface drive circuit. World's lowest RDSon at 40V. Highest current... [See More]

• Polarity: P-Channel; P
• V_GS(off): -2.2 to -1.2

• Transistor Technology / Material: Si/SiC
• r_DS(on): 0.0024

MOSFETs P-Ch -100V -15A TO220-3 Product overview: SPP15P10PL H from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement... [See More]

• Polarity: P-Channel
• Transconductance: 0.0110

• MOSFET Operating Mode: Enhancement
• P_D: 128

MOSFET, P-Ch, Single, -0.13A, -50V, SOT-23 [See More]

• Polarity: P-Channel
• I_DSS: -130

• V_(BR)DSS: -50
• Package Type: SOT23; SOT-23

12V , P-Channel FemtoFET?MOSFET 3-PICOSTAR -55 to 150 [See More]

• Polarity: P-Channel
• I_DSS: -9000

• V_(BR)DSS: -12
• V_GS(off): -8

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Extended temperature range Tj = 175 °C. Trench MOSFET technology. Very fast switching. Applications. Relay... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -100

• MOSFET Operating Mode: Enhancement
• I_DSS: -1200

MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

• Polarity: P-Channel
• V_(BR)DSS: 12

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• I_DSS: -16

MOSFET P-Channel 60V 2.6A SOT223 [See More]

• Polarity: P-Channel
• Package Type: SOT223; Sot-223

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET N/P-CH 60V 8SOIC [See More]

• Polarity: P-Channel; N and P-Channel
• V_(BR)DSS: 60

• Transistor Technology / Material: MOSFET (Metal Oxide)
• T_J: -55 to 150

Manufacturer: AMIS. Category: Connectors,Interconnects. Part Status: Obsolete. FET Type: N and P-Channel. Technology: Schottky. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm... [See More]

• Polarity: P-Channel

• Package Type: SOT3

P-Channel Silicon MOSFET [See More]

• Polarity: P-Channel

Summary of Features. P-channel - Logic Level - Enhancement mode. AEC qualified. MSL1 up to 260 °C peak reflow. 175 °C operating temperature. Green Product (RoHS compliant). 100% Avalanche tested. Intended for reverse battery protection. Benefits. No charge pump required for high side... [See More]

• Polarity: P-Channel; P
• V_GS(off): -2 to -1

• Transistor Technology / Material: Si/SiC
• r_DS(on): 0.0105

MOSFET P-CH 100V 1A HEXDIP Product overview: IRFD9123PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines,... [See More]

• Polarity: P-Channel

MOSFET, P-CH, SINGLE, -0.3A, -60V, SOT-323 [See More]

• Polarity: P-Channel
• I_DSS: -300

• V_(BR)DSS: -60
• Package Type: SOT323; SOT-323

20V , P-Channel FemtoFET?MOSFET 3-PICOSTAR -55 to 150 [See More]

• Polarity: P-Channel
• I_DSS: -10000

• V_(BR)DSS: -20
• V_GS(off): -12

P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Ultra small package: 0.78 × 0.78 × 0.35 mm. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -12

• MOSFET Operating Mode: Enhancement
• I_DSS: -4900

MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]

• Polarity: P-Channel
• V_(BR)DSS: 12

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• I_DSS: -16

MOSFET P-Channel 20V 3.2A SOT23 [See More]

• Polarity: P-Channel
• Package Type: SOT23; Sot-23

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET N/P-CH 30V 6-TSOP [See More]

• Polarity: P-Channel; N and P-Channel Complementary
• V_(BR)DSS: 30

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 3400

Manufacturer: AMIS. Category: Connectors,Interconnects. Part Status: Obsolete. FET Type: N and P-Channel. Technology: Schottky. Drain to Source Voltage (Vdss): 50 V. Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V. Vgs(th) (Max) @ Id: 3V @ 77 µA. Gate... [See More]

• Polarity: P-Channel
• Package Type: SOT3

• P_D: 100000

Power Field-Effect Transistor, 16A, 60V, P-Channel, MOSFET [See More]

• Polarity: P-Channel

• Package Type: TO-220; TO-220-3

Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, COTS. Features. Single event effect (SEE) hardened. 5V CMOS and TTL Compatible. Fast switching. Low total gate charge. Simple drive requirements. Hermetically sealed. Ceramic package. Light weight. [See More]

• Polarity: P-Channel; P
• Package Type: C-CCN-3

• V_(BR)DSS: -60

MOSFET, P-Ch, Dual, -4A, -20V, DFN2x2 DUAL 2EP [See More]

• Polarity: P-Channel
• I_DSS: -4000

• V_(BR)DSS: -20
• Package Type: DFN2x2 DUAL 2EP

20V , P-Channel FemtoFET?MOSFET 3-PICOSTAR -55 to 150 [See More]

• Polarity: P-Channel
• I_DSS: -6500

• V_(BR)DSS: -20
• V_GS(off): -12

P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Ultra small package: 0.98 × 1.48 × 0.35 mm. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -12

• MOSFET Operating Mode: Enhancement
• I_DSS: -8200

MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

• Polarity: P-Channel
• V_(BR)DSS: 12

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• I_DSS: -16

MOSFET P-Ch 25A 30V Logic DPAK [See More]

• Polarity: P-Channel
• Package Type: TO-252 (DPAK); Dpak (to-252)

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

COMPLEMENTARY [See More]

• Polarity: P-Channel; N and P-Channel Complementary
• V_(BR)DSS: 30

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 3500

Mfr: TE Connectivity Aerospace, Defense and Marine. Category: Connectors,Interconnects. Packaging: Bulk. Part Status: Obsolete. FET Type: P-Channel. Technology: Wirewound. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 21mA (Ta). Drive Voltage (Max Rds On, Min... [See More]

• Polarity: P-Channel
• Packing Method: Bulk; Bulk

• Package Type: SOT3

Power Field-Effect Transistor, P-Channel MOSFET [See More]

• Polarity: P-Channel

• Package Type: DPAK-3

Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached. Features. Single event effect (SEE) hardened. 5V CMOS and TTL Compatible. Fast switching. Low total gate charge. Simple drive requirements. Hermetically sealed. Ceramic package. [See More]

• Polarity: P-Channel; P
• Package Type: C-CCN-3

• V_(BR)DSS: -60

MOSFET, P-Ch, Dual, -4.2A, -30V, DFN2x2 Dual [See More]

• Polarity: P-Channel
• I_DSS: -4200

• V_(BR)DSS: -30
• Package Type: DFN2x2 Dual

Single P-channel Enhancement-Mode MOSFET 8-SOIC [See More]

• Polarity: P-Channel

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Trench MOSFET technology. Small and leadless ultra thin SMD plastic... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -12

• MOSFET Operating Mode: Enhancement
• I_DSS: -16000

MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]

• Polarity: P-Channel
• V_(BR)DSS: 12

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• I_DSS: -16

Trench MOSFET P-channel 20V 1A SOT323 [See More]

• Polarity: P-Channel
• Package Type: SOT323; Sot-323 (sc-70)

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET N/P-CH 20V 6-TSOP [See More]

• Polarity: P-Channel; N and P-Channel Complementary
• V_(BR)DSS: 20

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 3400

Manufacturer: AMIS. Category: Connectors,Interconnects. Part Status: Obsolete. FET Type: N and P-Channel. Technology: Schottky. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm... [See More]

• Polarity: P-Channel
• Package Type: SOT3

• P_D: 825

Small Signal P-Channel MOSFET [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT323; SC-70 (SOT-323) 3

Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 300 krad(Si) TID, COTS. Features. Single event effect (SEE) hardened. 5V CMOS and TTL compatible. Fast switching. Low total gate charge. Simple drive requirements. Hermetically sealed. Surface mount. Light weight. [See More]

• Polarity: P-Channel; P
• Package Type: C-LCC-4

• V_(BR)DSS: -60

MOSFET, P-Ch, Single, -14.00A, -60V, TO-252 (DPAK) [See More]

• Polarity: P-Channel
• I_DSS: -14000

• V_(BR)DSS: -60
• Package Type: TO-252 (DPAK); TO-252 (DPAK)

Single P-channel Enhancement-Mode MOSFET 8-SOIC [See More]

• Polarity: P-Channel

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Trench MOSFET technology. Side wettable flanks for optical solder... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -12

• MOSFET Operating Mode: Enhancement
• I_DSS: -12700

MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

• Polarity: P-Channel
• V_(BR)DSS: 12

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• I_DSS: -16

MOSFET P-Channel 20V 760mA Signal SOT416 [See More]

• Polarity: P-Channel
• Package Type: Sot-416 (sc-75)

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET N/P-CH 20V SC70-6 [See More]

• Polarity: P-Channel; N and P-Channel
• V_(BR)DSS: 20

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 900

Mfr: TE Connectivity Aerospace, Defense and Marine. Category: Connectors,Interconnects. Packaging: Bulk. Part Status: Obsolete. FET Type: N and P-Channel. Technology: Wirewound. Drain to Source Voltage (Vdss): 60V, 50V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds... [See More]

• Polarity: P-Channel
• Packing Method: Bulk; Bulk

• Package Type: SOT3

P-Channel MOSFET High Speed Switching [See More]

• Polarity: P-Channel

• Package Type: SOT323; SC-70 (SOT-323)

Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, COTS. Features. Single event effect (SEE) hardened. Low RDS(on). Low total gate charge. Proton tolerant. Simple drive requirements. Hermetically sealed. Ceramic package. Surface mount. Light weight. ESD... [See More]

• Polarity: P-Channel; P
• Package Type: C-CCN-3

• V_(BR)DSS: -100

MOSFET, P-Ch, Single, -25.00A, -60V, TO-220 [See More]

• Polarity: P-Channel
• I_DSS: -25000

• V_(BR)DSS: -60
• Package Type: TO-220; TO-220

Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC [See More]

• Polarity: P-Channel

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Trench MOSFET technology. Leadless ultra small and ultra thin SMD plastic package: 1.1 ×... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -12

• MOSFET Operating Mode: Enhancement
• I_DSS: -3200

MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]

• Polarity: P-Channel
• V_(BR)DSS: 12

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• I_DSS: -16

MOSFET P-Channel 60V 2.9A TSOP6 [See More]

• Polarity: P-Channel
• Package Type: Tsop

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET N/P-CH 40V 12A TO252-4 [See More]

• Polarity: P-Channel; N and P-Channel, Common Drain
• V_(BR)DSS: 40

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 12000

Mfr: Freescale Semiconductor. Category: Connectors,Interconnects. Packaging: Bulk. Part Status: Obsolete. FET Type: P-Channel. Technology: Schottky. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On... [See More]

• Polarity: P-Channel
• Packing Method: Bulk; Bulk

• Package Type: SOT3

P-Channel Silicon MOSFET [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: PCP4

Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(Si) TID, COTS. Features. Single event effect (SEE) hardened. Low RDS(on). Low total gate charge. Simple drive requirements. Ease of paralleling. Hermetically sealed. Electrically isolated. Ceramic Package. Light... [See More]

• Polarity: P-Channel; P
• Package Type: C-CCN-3

• V_(BR)DSS: -60

MOSFET, P-Ch, Dual, -130mA, -50V, SOT-363 [See More]

• Polarity: P-Channel
• I_DSS: -130

• V_(BR)DSS: -50
• Package Type: SOT-363

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Very low threshold voltage. Very fast switching. Trench MOSFET technology. ElectroStatic Discharge... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -12

• MOSFET Operating Mode: Enhancement
• I_DSS: -1200

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Through Hole 16-PDIP [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -1.65

MOSFET P-Channel 60V 20A 52mOhm WDFN8 [See More]

• Polarity: P-Channel
• Package Type: Wdfn

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET 2P-CH 30V 4A 8DFN [See More]

• Polarity: P-Channel; 2 P-Channel (Dual)
• V_(BR)DSS: 30

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 4000

Win Source Part Number: 1000650-SSM6P15FU,LF. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). FET Type: 2 P-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 30V. Current... [See More]

• Polarity: P-Channel
• Package Type: SOT3

• T_J: 150

Small Signal Field-Effect Transistor, 0.1A, 30V, P-Channel MOSFET, TO-236AB [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: TO-236AB

Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier. Features. Single event effect (SEE) hardened. Low RDS(on). Low total gate charge. Simple drive requirements. Ease of paralleling. Hermetically sealed. Electrically isolated. Ceramic... [See More]

• Polarity: P-Channel; P
• Package Type: C-CCN-3

• V_(BR)DSS: -60

MOSFET, P-CH, Single, -2A, -100V, SOT-223 [See More]

• Polarity: P-Channel
• I_DSS: -2000

• V_(BR)DSS: -100
• Package Type: SOT223; SOT-223

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Very low threshold voltage. Very fast switching. Trench MOSFET technology. ElectroStatic... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -12

• MOSFET Operating Mode: Enhancement
• I_DSS: -1200

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Surface Mount 16-SOIC [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -1.65

NTF5P03T3G, PFET SOT223 5.2A 30V TR [See More]

• Polarity: P-Channel
• Package Type: SOT223; Sot-223

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET N/P-CH 30V 9A/18.5A 8DFN [See More]

• Polarity: P-Channel; N and P-Channel, Common Drain
• V_(BR)DSS: 30

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 9000

Win Source Part Number: 1009648-FDG6332C-PG. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: PowerTrench ®. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature: Standard. [See More]

• Polarity: P-Channel
• Package Type: SOT3

• T_J: -55 to 150

MOSFET P-Channel 30V 0.1A [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT-416

Rad hard, -100V, -3.1A, single, P-channel MOSFET, R5 in a SMD-0.2 package. Slash sheet. Similar Parts. IRHNMC597110. SMD-0.2, 100 krad(Si) TID, COTS. IRHNM597110. SMD-0.2, 100 krad(Si) TID, COTS. JANSR2N7506U8C. SMD-0.2, 100 krad(Si) TID, QPL. JANSR2N7506U8. SMD-0.2, 100 krad(Si) TID, QPL. [See More]

• Polarity: P-Channel; P
• Package Type: C-CCN-3

• V_(BR)DSS: -100

MOSFET, P-CH, Dual, -5.5A, -20V, DFN2x3 Dual [See More]

• Polarity: P-Channel
• I_DSS: -5500

• V_(BR)DSS: -20
• Package Type: DFN2x3 Dual

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Very fast switching. Trench MOSFET technology. 2 kV ESD protection. AEC-Q101 qualified. Applications. [See More]

• Polarity: N-Channel; P-Channel
• V_(BR)DSS: 20

• MOSFET Operating Mode: Enhancement
• I_DSS: 725

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Through Hole 16-PDIP [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -1.65

NTF6P02T3G, PFET SOT223 20V 6A 20V 50 [See More]

• Polarity: P-Channel
• Package Type: SOT223; Sot-223

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET N/P-CH 30V 8DIP [See More]

• Polarity: P-Channel; N and P-Channel
• V_(BR)DSS: 30

• Transistor Technology / Material: MOSFET (Metal Oxide)
• T_J: -55 to 150

Win Source Part Number: 1015711-VEC2315-TL-W. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). FET Type: 2 P-Channel (Dual). FET Feature: Logic Level Gate, 4V Drive. Drain to Source Voltage... [See More]

• Polarity: P-Channel
• Package Type: SOT3

• T_J: 150

P-Channel MOSFET, 20V, 2.6A, SC70-6 [See More]

• Polarity: P-Channel

• Package Type: SC-70-6

Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of... [See More]

• Polarity: P-Channel; P
• V_GS(off): -2.5

• Transistor Technology / Material: Si/SiC
• r_DS(on): 0.0030

MOSFET, P-CH, Dual, -7.5A, -20V, PPAK3x3 [See More]

• Polarity: P-Channel
• I_DSS: -7500

• V_(BR)DSS: -20
• Package Type: PPAK3x3

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Very fast switching. Trench MOSFET technology. ESD protection up to 2 kV. Applications. [See More]

• Polarity: N-Channel; P-Channel
• V_(BR)DSS: 20

• MOSFET Operating Mode: Enhancement
• I_DSS: 800

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Surface Mount 16-SOIC [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -1.65

MOSFET P-Channel 20V 0.9A SOT23 [See More]

• Polarity: P-Channel
• Package Type: SOT23; Sot-23

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET N/P-CH 30V 8-SOIC [See More]

• Polarity: P-Channel; N and P-Channel Complementary
• V_(BR)DSS: 30

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 7000

Win Source Part Number: 1018761-DMC6040SSDQ-13. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 2,500. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature:... [See More]

• Polarity: P-Channel
• Package Type: SOT3

• T_J: -55 to 150

MOSFET P-CH 50V 0.07A MCP3 [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT323; SOT-323-3

Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of... [See More]

• Polarity: P-Channel; P
• V_GS(off): -1.5

• Transistor Technology / Material: Si/SiC
• r_DS(on): 0.0080

MOSFET, P-CH, Single, -100A, -30V, PPAK5x6 [See More]

• Polarity: P-Channel
• I_DSS: -100000

• V_(BR)DSS: -30
• Package Type: PPAK5x6

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Very fast switching. Trench MOSFET technology. 2 kV... [See More]

• Polarity: N-Channel; P-Channel
• V_(BR)DSS: 20

• MOSFET Operating Mode: Enhancement
• I_DSS: 5300

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Through Hole 16-PDIP [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -2.03

MOSFET P-Channel 50V 0.13A SOT323 [See More]

• Polarity: P-Channel
• Package Type: SOT323; Sot-323 (sc-70)

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET 2P-CH 8TSSOP [See More]

• Polarity: P-Channel; 2 P-Channel (Dual) Common Drain
• V_(BR)DSS: 20

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 5100

Win Source Part Number: 1045128-AOD609G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature: Standard. Drain to Source Voltage (Vdss): 40V. [See More]

• Polarity: P-Channel
• Package Type: SOT3; TO-252 (DPAK)

• T_J: -55 to 175

Small Signal Field-Effect Transistor, 0.07A, 50V, P-Channel MOSFET [See More]

• Polarity: P-Channel
• Packing Method: Bulk; Bulk

• Package Type: SIP3

Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of... [See More]

• Polarity: P-Channel; P
• V_GS(off): -2.5

• Transistor Technology / Material: Si/SiC
• r_DS(on): 0.0086

MOSFET, P-Ch, Single, -10.00A, -30V, SOP-8 [See More]

• Polarity: P-Channel
• I_DSS: -10000

• V_(BR)DSS: -30
• Package Type: SOP-8

P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low RDSon. Very fast switching. Trench MOSFET technology. Applications. Relay driver. High-speed line driver. [See More]

• Polarity: P-Channel
• V_(BR)DSS: -20

• MOSFET Operating Mode: Enhancement
• I_DSS: -1000

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Surface Mount 16-SOIC [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -2.03

MOSFET P-Channel 20V 0.46A SOT523 [See More]

• Polarity: P-Channel
• Package Type: Sot-523 (sc-89)

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET N/P-CH 30V 4A/3A 8SO [See More]

• Polarity: P-Channel; N and P-Channel
• V_(BR)DSS: 30

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 4000

Win Source Part Number: 1045173-AOSD21313C. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). FET Type: 2 P-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 30V. Current -... [See More]

• Polarity: P-Channel
• Package Type: SOT3

• T_J: -55 to 150

Small Signal Field-Effect Transistor, P-Channel, MOSFET [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT-623F

OptiMOS ™ P-Channel MOSFET 100V in D ²PAK. OptiMOS ™ P-Channel MOSFETs 100V in D ²PAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-Channel device is the reduction of... [See More]

• Polarity: P-Channel; P
• V_GS(off): -4 to -2.1

• Transistor Technology / Material: Si/SiC
• r_DS(on): 0.1850

MOSFET, P-CH, Single, -3.3A, -60V, SOT-23-6L [See More]

• Polarity: P-Channel
• I_DSS: -3300

• V_(BR)DSS: -60
• Package Type: SOT23; SOT-23-6L

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low RDSon. Very fast switching. Trench MOSFET technology. Applications. Relay driver. High-speed line driver. [See More]

• Polarity: P-Channel
• V_(BR)DSS: -20

• MOSFET Operating Mode: Enhancement
• I_DSS: -4100

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Through Hole 16-PDIP [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -2.03

MOSFET P-Channel 30V 12A SOIC8PEP [See More]

• Polarity: P-Channel
• Package Type: Soic

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET 2P-CH 20V 0.39A SOT363 [See More]

• Polarity: P-Channel; 2 P-Channel (Dual)
• V_(BR)DSS: 20

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 390

Win Source Part Number: 1049678-BSL215PL6327. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: OptiMOS ™. Package: Bulk. Standard Package: 3,000. Mounting: SMD (SMT). FET Type: 2 P-Channel (Dual). FET Feature: Logic Level Gate. Drain to Source Voltage... [See More]

• Polarity: P-Channel
• Package Type: SOT3

• T_J: -55 to 150

20V-150V P-Channel Automotive MOSFET [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOIC8

P-channel enhancement mode Field-Effect Transistor (FET), -30 V, D-PAK. Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as... [See More]

• Polarity: P-Channel; P
• V_GS(off): -2 to -1

• Transistor Technology / Material: Si/SiC
• r_DS(on): 0.0042

MOSFET, P-Ch, Single, -2.00A, -150V, SOT-23-6L [See More]

• Polarity: P-Channel
• I_DSS: -2000

• V_(BR)DSS: -150
• Package Type: SOT23; SOT-23-6L

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Very fast switching. Trench MOSFET technology. [See More]

• Polarity: N-Channel; P-Channel
• V_(BR)DSS: 20

• MOSFET Operating Mode: Enhancement
• I_DSS: 3500

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Surface Mount 16-SOIC [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -2.03

MOSFET P-Channel 20V 4.2A SOT23 [See More]

• Polarity: P-Channel
• Package Type: SOT23; Sot-23

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET N/P-CH 20V 1.5A TSOP-6 [See More]

• Polarity: P-Channel; N and P-Channel Complementary
• V_(BR)DSS: 20

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 1500

Win Source Part Number: 1049684-BSL316CL6327. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: OptiMOS ™. Package: Bulk. Standard Package: 1. Mounting: SMD (SMT). FET Type: N and P-Channel. FET Feature: Logic Level Gate. Drain to Source Voltage... [See More]

• Polarity: P-Channel
• Package Type: SOT3

• T_J: -55 to 150

20V-250V P-Channel Power MOSFET [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: PG-TDSON-8

-55V Single P-Channel Power MOSFET in a TO-220 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered... [See More]

• Polarity: P-Channel; P
• V_GS(off): -4 to -2

• Transistor Technology / Material: Si/SiC
• r_DS(on): 0.0200

MOSFET, P-CH, Single, -140A, -60V, TO-263 (D2PAK) [See More]

• Polarity: P-Channel
• I_DSS: -140000

• V_(BR)DSS: -60
• Package Type: TO-263; TO-263 (D2PAK)

P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Ultra small package: 0.78 × 0.78 × 0.35 mm. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -20

• MOSFET Operating Mode: Enhancement
• I_DSS: -4000

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Through Hole 16-PDIP [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -1.83

MOSFET P-Channel 30V 3.8A SOT23 [See More]

• Polarity: P-Channel
• Package Type: SOT23; Sot-23

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

BSO203 - 20V-250V P-CHANNEL POWE [See More]

• Polarity: P-Channel; 2 P-Channel (Dual)
• I_DSS: 7000

• V_(BR)DSS: 20
• T_J: -55 to 150

Win Source Part Number: 1055786-DMP2075UFDB-7. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). FET Type: 2 P-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 20V. Current... [See More]

• Polarity: P-Channel
• Package Type: SOT3

• T_J: -55 to 150

Small Signal Field-Effect Transistor, 1.52A, 12V, P-Channel, MOSFET [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SC-74-6

-55V Single P-Channel Power MOSFET in a TO-262 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered... [See More]

• Polarity: P-Channel; P
• V_GS(off): -4 to -2

• Transistor Technology / Material: Si/SiC
• r_DS(on): 0.0200

MOSFET, P-Ch, Single, -0.85A, -20V, SOT-883 [See More]

• Polarity: P-Channel
• I_DSS: -850

• V_(BR)DSS: -20
• Package Type: SOT-883

P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Ultra small package 0.78 x 0.78 x 0.35 mm. Trench MOSFET technology. ElectroStatic Discharge (ESD) protection >... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -20

• MOSFET Operating Mode: Enhancement
• I_DSS: -4200

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Surface Mount 16-SOIC [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -1.83

MOSFET P-Channel 40V 10.5A TO252 [See More]

• Polarity: P-Channel
• Package Type: TO-252 (DPAK); Dpak (to-252)

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

P-CHANNEL POWER MOSFET [See More]

• Polarity: P-Channel; 2 P-Channel (Dual)
• I_DSS: 8200

• V_(BR)DSS: 30
• T_J: -55 to 150

Win Source Part Number: 1055787-DMP2040USD-13. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel (TR). Standard Package: 2,500. Mounting: SMD (SMT). FET Type: 2 P-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 20V. [See More]

• Polarity: P-Channel
• Package Type: SO-8; SOT3

• T_J: -55 to 150

20V-250V P-Channel Power MOSFET [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SO-8; PG-DSO-8

-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package. Benefits. Planar cell structure for wide SOA. Optimized for broadest availability from distribution partners. Product qualification according to JEDEC standard. Silicon optimized for applications switching below <100kHz. Industry... [See More]

• Polarity: P-Channel; P
• V_GS(off): -4 to -2

• Transistor Technology / Material: Si/SiC
• r_DS(on): 0.0200

MOSFET, P-Ch, Dual, -0.4A, -20V, SOT-563 [See More]

• Polarity: P-Channel
• I_DSS: -400

• V_(BR)DSS: -20
• Package Type: SOT-563

P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Ultra small package: 0.98 x 1.48 x 0.35 mm. Trench MOSFET technology. ElectroStatic Discharge (ESD) protection... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -20

• MOSFET Operating Mode: Enhancement
• I_DSS: -7300

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Through Hole 16-PDIP [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -1.83

P-Channel Enhancement MOSFET SOT-23 [See More]

• Polarity: P-Channel
• Package Type: SOT23; Sot-23

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET N/P-CH 8-SOIC [See More]

• Polarity: P-Channel; N and P-Channel
• V_(BR)DSS: 60

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 3100

Win Source Part Number: 1055796-DMP56D0UV-7. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). FET Type: 2 P-Channel (Dual). FET Feature: Logic Level Gate. Drain to Source Voltage (Vdss): 50V. [See More]

• Polarity: P-Channel
• Package Type: SOT3

• T_J: -55 to 150

Small Signal Field-Effect Transistor, 0.225A, 250V, P-Channel MOSFET [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SC-73

IR MOSFET -40 V in a SO-8 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. Benefits. [See More]

• Polarity: P-Channel; P
• V_GS(off): -3 to -1

• Transistor Technology / Material: Si/SiC
• r_DS(on): 0.0150

MOSFET, P-Ch, Single, -0.45A, -20V, SOT-523 [See More]

• Polarity: P-Channel
• I_DSS: -450

• V_(BR)DSS: -20
• Package Type: SOT-523

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Very fast switching. Trench MOSFET technology. ElectroStatic Discharge... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -20

• MOSFET Operating Mode: Enhancement
• I_DSS: -800

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Surface Mount 16-SOIC [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -1.83

P-Channel Enhancement MOSFET SOT-23 [See More]

• Polarity: P-Channel
• Package Type: SOT23; Sot-23

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET N/P-CH 60V/50V SC70-6 [See More]

• Polarity: P-Channel; N and P-Channel
• V_(BR)DSS: 50 to 60

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 115

Win Source Part Number: 1063370-HP8MA2TB1. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). FET Type: N and P-Channel. FET Feature: Standard. Drain to Source Voltage (Vdss): 30V. Current -... [See More]

• Polarity: P-Channel
• Package Type: SOT3

• T_J: 150

MOSFET P-Channel Single 100V 1A, SIPMOS Small-Signal-Transistor [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: PG-SOT223-4

-30V Single P-Channel StrongIRFET ™ Power MOSFET in a PQFN 5x6 package. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio... [See More]

• Polarity: P-Channel; P
• V_GS(off): -2.4 to -1.3

• Transistor Technology / Material: Si/SiC
• r_DS(on): 0.0046

MOSFET, P-Ch, Single, -0.40A, -20V, SOT-723 [See More]

• Polarity: P-Channel
• I_DSS: -400

• V_(BR)DSS: -20
• Package Type: SOT-723

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Leadless ultra small package 0.63 x 0.33 x 0.25 mm. Trench MOSFET technology. Low profile... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -20

• MOSFET Operating Mode: Enhancement
• I_DSS: -900

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Through Hole 16-PDIP [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -2.07

P-Ch Enhancement Mode DMOS FET E-Line [See More]

• Polarity: P-Channel
• Package Type: TO-92; To-92

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET 2P-CH 50V 0.16A 6TSSOP [See More]

• Polarity: P-Channel; 2 P-Channel (Dual)
• V_(BR)DSS: 50

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 160

Win Source Part Number: 1065529-IRF9389PBF. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: HEXFET ®. Package: Tube. Standard Package: 3,800. Mounting: SMD (SMT). FET Type: N and P-Channel. FET Feature: Logic Level Gate. Drain to Source Voltage... [See More]

• Polarity: P-Channel
• Package Type: SOT3

• T_J: -55 to 150

20 V, P-channel Trench MOSFET [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT1220

-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package. Benefits. RoHS Compliant. Low RDS(on). Industry-leading quality. Dynamic dv/dt Rating. Fast Switching. Fully Avalanche Rated. 175 °C Operating Temperature. P-Channel MOSFET. Applications. Consumer electronics. Smart buildings. [See More]

• Polarity: P-Channel; P
• V_GS(off): -4 to -2

• Transistor Technology / Material: Si/SiC
• r_DS(on): 0.0650

MOSFET, P-CH, Single, -30A, -30V, DFN3x3-8L [See More]

• Polarity: P-Channel
• I_DSS: -30000

• V_(BR)DSS: -30
• Package Type: DFN3x3-8L

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Logic-level compatible. Very fast switching. Trench MOSFET technology. Small and leadless... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -30

• MOSFET Operating Mode: Enhancement
• I_DSS: -12300

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Surface Mount 16-SOIC [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -2.07

MOSFET P-Ch 20V 5A Enhancement SOT23 [See More]

• Polarity: P-Channel
• Package Type: SOT23; Sot-23

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET 2P-CH 50V 170MA SOT666 [See More]

• Polarity: P-Channel; 2 P-Channel (Dual)
• V_(BR)DSS: 50

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 170

Win Source Part Number: 1085303-PJQ2815_R1_00001. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). FET Type: 2 P-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 20V. [See More]

• Polarity: P-Channel
• Package Type: SOT3

• T_J: -55 to 150

P-Channel Silicon MOSFET General-Purpose Switching Device Applications [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT23; SOT-23-6

-55V Single P-Channel Power MOSFET in a I-Pak package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered... [See More]

• Polarity: P-Channel; P
• V_GS(off): -4 to -2

• Transistor Technology / Material: Si/SiC
• r_DS(on): 0.0650

P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Logic-level compatible. Side wettable flanks for optical solder inspection. Ultra small and... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -50

• MOSFET Operating Mode: Enhancement
• I_DSS: -270

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Through Hole 16-PDIP [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -2.07

MOSFET P-Ch 20V 12A 1.8V TrenchFET SOIC8 [See More]

• Polarity: P-Channel
• Package Type: Soic

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

NOW NEXPERIA BSS84AKW - SMALL SI [See More]

• Polarity: P-Channel; P-Channel
• V_(BR)DSS: 50

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 150

Win Source Part Number: 1085314-PJS6600_S1_00001. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature: Standard. Drain to Source Voltage... [See More]

• Polarity: P-Channel
• T_J: -55 to 150

• MOSFET Operating Mode: Enhancement
• Package Type: SOT3; SOT23

P-Channel PowerTrench MOSFET 30V [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT23; TSOT-23-6

-20V P-Channel StrongIRFET ™ Power MOSFET in a PQFN 2x2 package. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio... [See More]

• Polarity: P-Channel; P
• V_GS(off): -1.1 to -0.4000

• Transistor Technology / Material: Si/SiC
• T_J: 150

P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Logic level compatible. Very fast switching. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]

• Polarity: P-Channel
• V_(BR)DSS: -70

• MOSFET Operating Mode: Enhancement
• I_DSS: -2400

MOSFET Array 4 P-Channel, Matched Pair 8V - 500mW Surface Mount 16-SOIC [See More]

• Polarity: P-Channel
• V_(BR)DSS: -8

• MOSFET Operating Mode: Enhancement; Precision Enhancement Mode
• I_DSS: -2.07

MOSFET P-Ch 40V 50A TrenchFET TO-252AA [See More]

• Polarity: P-Channel
• Package Type: TO-252 (DPAK); Dpak (to-252)

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET 2P-CH 50V 0.13A SOT-563 [See More]

• Polarity: P-Channel; 2 P-Channel (Dual)
• V_(BR)DSS: 50

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 130

Win Source Part Number: 1095537-SP8M41HZGTB. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). FET Type: N and P-Channel. FET Feature: Standard. Drain to Source... [See More]

• Polarity: P-Channel
• Package Type: SOT3

• T_J: 150

MOSFET P-CH 120V 15A I2PAK [See More]

• Polarity: P-Channel

• Package Type: TO-262-3

-20V Single P-Channel StrongIRFET ™ Power MOSFET in a SOT-23 package. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio... [See More]

• Polarity: P-Channel; P
• V_GS(off): -1.1 to -0.4000

• Transistor Technology / Material: Si/SiC
• T_J: 150

MOSFET Array 4 P-Channel, Matched Pair 10.6V - 500mW Through Hole 14-PDIP [See More]

• Polarity: P-Channel
• V_(BR)DSS: 12

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• I_DSS: -2

MOSFET P-Channel 100V 0.075A SOT23 [See More]

• Polarity: P-Channel
• Package Type: SOT23; Sot-23

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET N/P-CH 20V 5.1/3.2A TDSON [See More]

• Polarity: P-Channel; N and P-Channel Complementary
• V_(BR)DSS: 20

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 5100

Win Source Part Number: 1095779-SQ3989EV-T1_GE3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101, TrenchFET ®. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). FET Type: 2 P-Channel (Dual). FET Feature:... [See More]

• Polarity: P-Channel
• Package Type: SOT3

• T_J: -55 to 175

P-Channel Silicon MOSFET For General Purpose Switching Device Application [See More]

• Polarity: P-Channel
• Packing Method: Tube; Tube

• Package Type: DIP8

-20V Single P-Channel StrongIRFET ™ MOSFET in a TSOP-6 (Micro 6) package. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio... [See More]

• Polarity: P-Channel; P
• V_GS(off): -1.1 to -0.4000

• Transistor Technology / Material: Si/SiC
• T_J: 150

MOSFET Array 4 P-Channel, Matched Pair 10.6V - 500mW Surface Mount 14-SOIC [See More]

• Polarity: P-Channel
• V_(BR)DSS: 12

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• I_DSS: -2

MOSFET P-Channel 70V 3.7A SOT223 [See More]

• Polarity: P-Channel
• Package Type: SOT223; Sot-223

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET 2P-CH 3.9A 9DSBGA [See More]

• Polarity: P-Channel; 2 P-Channel (Dual) Common Source
• I_DSS: 3900

• Transistor Technology / Material: MOSFET (Metal Oxide)
• T_J: -55 to 150

Win Source Part Number: 1097827-TC7920K6-G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel (TR). Standard Package: 3,300. Mounting: SMD (SMT). FET Type: 2 N and 2 P-Channel. FET Feature: Standard. Drain to Source Voltage (Vdss): 200V. Rds... [See More]

• Polarity: P-Channel
• Package Type: SOT3

• T_J: -55 to 150

High Speed Switching P-Channel Power MosFET, 100V, 50A [See More]

• Polarity: P-Channel
• Packing Method: Tray

• Package Type: TO-3; TO-3P-3

OptiMOS ™ P-Channel MOSFET 150V in SOT-223. OptiMOS ™ P-Channel MOSFETs 150V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-Channel device is the reduction of design... [See More]

• Polarity: P-Channel; P
• V_GS(off): -2 to -1

• Transistor Technology / Material: Si/SiC
• r_DS(on): 1.38

MOSFET Array 2 P-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

• Polarity: P-Channel
• V_(BR)DSS: 12

• MOSFET Operating Mode: Enhancement; Enhancement Mode
• I_DSS: -2

MOSFET P-Channel 60V 0.14A E-Line [See More]

• Polarity: P-Channel
• Package Type: TO-92; To-92

• MOSFET Operating Mode: Enhancement
• Number of units in IC: 1

MOSFET 2P-CH 20V 1.6A 6WLP [See More]

• Polarity: P-Channel; 2 P-Channel (Dual) Common Source
• V_(BR)DSS: 20

• Transistor Technology / Material: MOSFET (Metal Oxide)
• I_DSS: 1600

US6J12 is low on-resistance MOSFET, suitable for switching application. [See More]

• Polarity: P-Channel
• I_DSS: -2000

• V_(BR)DSS: -12
• P_D: 1000

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Polarity: P-Channel
• r_DS(on): 3.5

• V_GS(off): -2.4
• Package Type: SOT89

0.63A, 20V, 2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA [See More]

• Polarity: P-Channel

20V 20A 15m Ω 1V P Channel PDFN-8(3x3) MOSFETs ROHS [See More]

• Polarity: P-Channel
• V_GS(off): 1

• V_(BR)DSS: 20
• r_DS(on): 0.0150

Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 [See More]

• Polarity: P-Channel
• I_DSS: 6500

• V_(BR)DSS: 100
• P_D: 25000

Features: TrenchMOS technology. Lowest ON-resistance in the industry. Avalanche rated. Hermetically Sealed, Hot Case power SMD. Low Total Gate Charge. Fast Switching. TX, TXV, S-Level screening available 2/. Improved (RDS(ON) QG) figure of merit [See More]

• Polarity: P-Channel
• I_DSS: 0.3000

• V_(BR)DSS: 240
• V_GS(off): 4.5

The 3N190 Series Monolithic-Duel, P-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and Switching Applications. Available in TO-78 7L RoHS and Tested Die. All Linear Systems devices are available with special... [See More]

• Polarity: P-Channel

Karl Kruse  is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

• Polarity: P-Channel

US6J12 is low on-resistance MOSFET, suitable for switching application. [See More]

• Polarity: P-Channel
• I_DSS: -2000

• V_(BR)DSS: -12
• P_D: 1000

-20V Pch+Pch Small Signal MOSFET [See More]

• Polarity: P-Channel
• I_DSS: -1500

• V_(BR)DSS: -20
• P_D: 1250

VP2110 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature... [See More]

• Polarity: P-Channel
• r_DS(on): 12

• V_GS(off): -3.5
• Package Type: SOT23

4V DRIVE NCH+PCH MOSFET [See More]

• Polarity: N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 30

30V 20A 29W 39m Ω@10V,15A 2.5V@250uA P Channel TO-252-2L MOSFETs ROHS [See More]

• Polarity: P-Channel
• V_GS(off): 2.5

• V_(BR)DSS: 30
• r_DS(on): 0.0390

The 3N163 Series Single, P-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and switching Applications. Available in TO-72 4L ROHS, SOT-143 4L ROHS, and Tested Die. All Linear Systems devices are available with... [See More]

• Polarity: P-Channel

• Package Type: TO-72

Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 200

• V_(BR)DSS: 20
• P_D: 150

Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 200

• V_(BR)DSS: 20
• P_D: 150

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Polarity: P-Channel
• r_DS(on): 12

• V_GS(off): -2.4
• Package Type: TO-92

Automotive P-Channel 30 V (D-S) 175 °C MOSFET [See More]

• Polarity: P-Channel
• r_DS(on): 0.0300

• V_(BR)DSS: -30
• P_D: 6000

20V 6A 20m Ω 1.4V P Channel SOT23-3L MOSFETs ROHS [See More]

• Polarity: P-Channel
• V_GS(off): 1.4

• V_(BR)DSS: 20
• r_DS(on): 0.0200

The 3N165 Series Monolithic-Dual, P-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and Switching Applications. Available in TO-99 8L ROHS, SOIC 8L ROHS, and Tested Die. All Linear Systems devices are available with... [See More]

• Polarity: P-Channel

Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 100

• V_(BR)DSS: 20
• P_D: 150

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Polarity: P-Channel
• I_DSS: -100

• V_(BR)DSS: -20
• P_D: 150

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Polarity: P-Channel
• r_DS(on): 12

• V_GS(off): -2
• Package Type: SOT89

Automotive P-Channel 60 V (D-S) 175 °C MOSFET [See More]

• Polarity: P-Channel
• Packing Method: Tape Reel; Tape & Reel (TR)

• P_D: 46000

20V 2.3A 95m Ω 1V P Channel SOT-23 MOSFETs ROHS [See More]

• Polarity: P-Channel
• V_GS(off): 1

• V_(BR)DSS: 20
• r_DS(on): 0.0950

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Polarity: P-Channel
• I_DSS: -100

• V_(BR)DSS: -20
• P_D: 150

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Polarity: P-Channel
• I_DSS: -100

• V_(BR)DSS: -20
• P_D: 150

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Polarity: P-Channel
• r_DS(on): 2

• V_GS(off): -2.4
• Package Type: SOT89

Dual Common Drain P-Channel PowerTrench ® MOSFET -20V, -7A, 36mO [See More]

• Polarity: P-Channel
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: -20

60V 2A 160m Ω 2.5V P Channel SOT23 MOSFETs ROHS [See More]

• Polarity: P-Channel
• V_GS(off): 2.5

• V_(BR)DSS: 60
• r_DS(on): 0.1600

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Polarity: P-Channel
• I_DSS: -100

• V_(BR)DSS: -20
• P_D: 150

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Polarity: P-Channel
• I_DSS: -100

• V_(BR)DSS: -20
• P_D: 150

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Polarity: P-Channel
• r_DS(on): 12

• V_GS(off): -2.4
• Package Type: SOT89

MOSFET -12V P-Channel PowerTrench MOSFET [See More]

• Polarity: P-Channel
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 12

30V 26A 33m Ω@10V,26A P Channel TO-252 MOSFETs ROHS [See More]

• Polarity: P-Channel
• r_DS(on): 0.0330

• V_(BR)DSS: 30
• Package Type: TO-252 (DPAK)

Transistor [See More]

• Polarity: P-Channel
• I_DSS: -200

• V_(BR)DSS: -20
• P_D: 150

The Ultra Small Package(0806size). [See More]

• Polarity: P-Channel
• I_DSS: -100

• V_(BR)DSS: -20
• P_D: 100

TP5322 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and... [See More]

• Polarity: P-Channel
• r_DS(on): 12

• V_GS(off): -2.4
• Package Type: SOT23; SOT89

MOSFET 20V 200/150mA 5.0/8.0ohm @ 4.5V [See More]

• Polarity: N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 20

30V 6A 50m Ω@10V,7A 2.5W 2.5V@250uA P Channel SOT-89-3 MOSFETs ROHS [See More]

• Polarity: P-Channel
• V_GS(off): 2.5

• V_(BR)DSS: 30
• r_DS(on): 0.0500

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Polarity: P-Channel
• I_DSS: -100

• V_(BR)DSS: -20
• P_D: 150

The ultra-small package(1006size) RV2C001ZP is suitable for portable devices. [See More]

• Polarity: P-Channel
• I_DSS: -100

• V_(BR)DSS: -20
• P_D: 100

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Polarity: P-Channel
• r_DS(on): 8

• V_GS(off): -2.4
• Package Type: SOT89

MOSFET 30V Enhancement Mode [See More]

• Polarity: N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 30

30V 30A 15m Ω 2.5V P Channel PDFN-8(3x3) MOSFETs ROHS [See More]

• Polarity: P-Channel
• V_GS(off): 2.5

• V_(BR)DSS: 30
• r_DS(on): 0.0150

The Ultra Small Package(0806size). [See More]

• Polarity: P-Channel
• I_DSS: -100

• V_(BR)DSS: -20
• P_D: 100

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Polarity: P-Channel
• I_DSS: -4000

• V_(BR)DSS: -12
• P_D: 800

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Polarity: P-Channel
• r_DS(on): 0.6000

• V_GS(off): -3.5
• Package Type: TO-92; SOT89

MOSFET 3N/3P-CH 60V 10A/6A 12SIP [See More]

• Polarity: N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 60

30V 4A 48m Ω 1.3V P Channel SOT23 MOSFETs ROHS [See More]

• Polarity: P-Channel
• V_GS(off): 1.3

• V_(BR)DSS: 30
• r_DS(on): 0.0480

Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 2500

• V_(BR)DSS: 20
• P_D: 1250

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Polarity: P-Channel
• I_DSS: -6000

• V_(BR)DSS: -12
• P_D: 1500

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Polarity: P-Channel
• r_DS(on): 15

• V_GS(off): -2.4
• Package Type: SOT89

MOSFET 500V N &P 60/125 Ohm [See More]

• Polarity: N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 500

40V 30A 25m Ω 2.5V P Channel TO-252 MOSFETs ROHS [See More]

• Polarity: P-Channel
• V_GS(off): 2.5

• V_(BR)DSS: 40
• r_DS(on): 0.0250

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Polarity: P-Channel
• I_DSS: -4000

• V_(BR)DSS: -12
• P_D: 800

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market. [See More]

• Polarity: P-Channel
• I_DSS: -1500

• V_(BR)DSS: -20
• P_D: 900

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Polarity: P-Channel
• r_DS(on): 25

• V_GS(off): -2.4
• Package Type: TO-92

MOSFET Dual P-Channel Nex FET Power MOSFET [See More]

• Polarity: P-Channel
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 20

30V 12A 9.5m Ω 2.5V P Channel SOP-8 MOSFETs ROHS [See More]

• Polarity: P-Channel
• V_GS(off): 2.5

• V_(BR)DSS: 30
• r_DS(on): 0.0095

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Polarity: P-Channel
• I_DSS: -4500

• V_(BR)DSS: -12
• P_D: 1250

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market. [See More]

• Polarity: P-Channel
• I_DSS: -1000

• V_(BR)DSS: -20
• P_D: 700

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Polarity: P-Channel
• r_DS(on): 15

• V_GS(off): -2
• Package Type: TO-92

MOSFET N/P-CH 20V 1.13A SC70-6 [See More]

• Polarity: N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 20

30V 15A 12m Ω@10V,15A 3.1W 3V@250uA P Channel SOP-8 MOSFETs ROHS [See More]

• Polarity: P-Channel
• V_GS(off): 3

• V_(BR)DSS: 30
• r_DS(on): 0.0120

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Polarity: P-Channel
• I_DSS: -6000

• V_(BR)DSS: -12
• P_D: 1500

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Polarity: P-Channel
• I_DSS: -5000

• V_(BR)DSS: -30
• P_D: 2000

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Polarity: P-Channel
• r_DS(on): 25

• V_GS(off): -2.4
• Package Type: TO-92; SOT89

MOSFET N/P-CH 20V 2A/1.5A MCPH6 [See More]

• Polarity: N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 20

30V 5.5A 2.1W 45M Ω@10V,3A 2 P-Channel SOP-8 MOSFETs ROHS [See More]

• Polarity: P-Channel
• r_DS(on): 4.50E7

• V_(BR)DSS: 30
• P_D: 2100