TO-263 Metal-Oxide Semiconductor FET (MOSFET)

MOSFET N-Ch 100V 80A UltraFET II D2PAK [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 80000

MOSFET P-CH 60V 38A TO263-2 [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: P-Channel; P-Channel
• V_(BR)DSS: 60

Win Source Part Number: 1001036-IXFA230N075T2-TRL. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: HiPerFET ™, TrenchT2 ™. Package: Tape & Reel (TR). Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type:... [See More]

• Package Type: TO-263; SOT3
• P_D: 480000

• Polarity: N-Channel
• T_J: -55 to 175

Nch Single Power Mosfet 60V 83A [See More]

• Package Type: TO-263; TO-263-3

• Packing Method: Tape Reel; Coil Tape

Infineon ’s 600V CoolMOS ™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET N-Ch 55V 80A UltraFET II D2PAK [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 55

• Polarity: N-Channel
• I_DSS: 80000

SIC_DISCRETE [See More]

• Package Type: TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
• Transistor Technology / Material: SiCFET (Silicon Carbide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 1200

Win Source Part Number: 1001477-IXFA56N30X3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: HiPerFET ™, Ultra X3. Package: Tube. Standard Package: 50. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source... [See More]

• Package Type: TO-263; SOT3
• P_D: 320000

• Polarity: N-Channel
• T_J: -55 to 150

20A, 40V, N-Channel Power MOSFET, TO-263AA [See More]

• Package Type: TO-263; TO-263AA

• Polarity: N-Channel

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET N-Channel 75V 75A D2PAK [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 75

• Polarity: N-Channel
• I_DSS: 75000

MOSFET N-CH 600V 10A TO263 [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 600

Win Source Part Number: 1002447-STB10LN80K5. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: MDmesh ™ K5. Package: Tape & Reel. Standard Package: 1,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source... [See More]

• Package Type: TO-263; SOT3
• P_D: 110000

• Polarity: N-Channel
• T_J: -55 to 150

12V-300V N-Channel Power MOSFET [See More]

• Package Type: TO-263; TO-263-7
• Packing Method: Tape Reel; Tape & Reel

• Polarity: N-Channel

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET N-Channel 650V 33A D2PAK [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 650

• Polarity: N-Channel
• I_DSS: 33000

MOSFET N-CH 600V 11A TO263 [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 600

Win Source Part Number: 1003568-IRFS11N50ATRLP. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 500 V. [See More]

• Package Type: TO-263; SOT3
• P_D: 170000

• Polarity: N-Channel
• T_J: -55 to 150

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET N-Channel 650V 42A D2PAK [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 710

• Polarity: N-Channel
• I_DSS: 42000

MOSFET N-CH 100V 18A/140A TO263 [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 100

Win Source Part Number: 1005494-FQB5N40TM. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: QFET ®. Package: Bulk. Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 400 V. [See More]

• Package Type: TO-263; SOT3
• P_D: 3130 to 70000

• Polarity: N-Channel
• T_J: -55 to 150

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPB65R041CFD7 in a D2PAK package is ideally suited for resonant topologies in industrial... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET N-chan OptiMOS-FD 200V 84A TO263 [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 200

• Polarity: N-Channel
• I_DSS: 84000

MOSFET N-CH 600V 11A TO263 [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 600

Win Source Part Number: 1005559-IXFA7N80P-TRL. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: HiPerFET ™, Polar. Package: Tape & Reel (TR). Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain... [See More]

• Package Type: TO-263; SOT3
• P_D: 200000

• Polarity: N-Channel
• T_J: -55 to 150

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET N-Channel 150V 8A D2PAK [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 150

• Polarity: N-Channel
• I_DSS: 79000

N [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 100

Win Source Part Number: 1006203-IXFA3N120. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: HiPerFET ™. Package: Tube. Standard Package: 50. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Package Type: TO-263; SOT3
• P_D: 200000

• Polarity: N-Channel
• T_J: -55 to 150

Summary of Features. N-channel - Enhancement mode. AEC qualified. MSL1 up to 260 °C peak reflow. 175 °C operating temperature. Green Product (RoHS compliant). 100% Avalanche tested. Benefits. world's lowest RDS at 40V (on). highest current capability. lowest switching and conduction power... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2 to 4

MOSFET N-Channel 300V 28A UniFET D2PAK [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 300

• Polarity: N-Channel
• I_DSS: 28000

MOSFET N-CH 40V 160A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 40

Win Source Part Number: 1007382-IXFA10N60P. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: HiPerFET ™, Polar. Package: Tube. Standard Package: 50. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage... [See More]

• Package Type: TO-263; SOT3
• P_D: 200000

• Polarity: N-Channel
• T_J: -55 to 150

Summary of Features. N-channel - Enhancement mode. AEC qualified. MSL1 up to 260 °C peak reflow. 175 °C operating temperature. Green product (RoHS compliant). Ultra low Rds(on). 100% Avalanche tested. Benefits. world's lowest RDS at 40V (on). highest current capability. lowest switching... [See More]

• Package Type: TO-263; PG-TO263-7
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2 to 4

MOSFET, Fairchild, FDB035N10A [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 120000

AUIRF2804 - 20V-40V N-CHANNEL AU [See More]

• Package Type: TO-263; TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 40

Win Source Part Number: 1007649-AOB190A60L. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current... [See More]

• Package Type: TO-263; SOT3
• P_D: 208000

• Polarity: N-Channel
• T_J: -55 to 150

Summary of Features. N-channel - Enhancement mode. AEC qualified. MSL1 up to 260 °C peak reflow. 175 °C operating temperature. Green product (RoHS compliant). Ultra low Rds(on). 100% Avalanche tested. Simulation/SPICE-Model. Applications. Electronic stability control. Designers who used... [See More]

• Package Type: TO-263; PG-TO263-7
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2 to 4

MOSFET, Fairchild, FDB050AN06A0 [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 60

• Polarity: N-Channel
• I_DSS: 80000

AUIRF2804 - 20V-40V N-CHANNEL AU [See More]

• Package Type: TO-263; TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 40

Win Source Part Number: 1013963-HUF76645S3ST. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: UltraFET ®. Package: Bulk. Standard Package: 1. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Package Type: TO-263; SOT3
• P_D: 310000

• Polarity: N-Channel
• T_J: -55 to 175

Summary of Features. N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260 °C peak reflow. 175 °C operating temperature. Green product (RoHS compliant). 100% Avalanche tested. Benefits. highest current capability 180A. low switching and conduction power losses for... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 1.2 to 2.4

MOSFET N-Channel 100V 12A D2PAK [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 12000

MOSFET N-CH 100V 36A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 100

Win Source Part Number: 1013994-IXFA12N65X2. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: HiPerFET ™, Ultra X2. Package: Tube. Standard Package: 50. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source... [See More]

• Package Type: TO-263; SOT3
• P_D: 180000

• Polarity: N-Channel
• T_J: -55 to 150

Summary of Features. N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260 °C peak reflow. 175 °C operating temperature. Green product (RoHS compliant). 100% Avalanche tested. Benefits. highest current capability 180A. low switching and conduction power losses for... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 1.2 to 2.4

MOSFET N-Ch 100V 120A ThunderFET TO-263 [See More]

• Package Type: TO-263; D2PAK (TO-263)
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 100

AUIRF6218 - 20V-150V P-CHANNEL A [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: P-Channel; P-Channel
• V_(BR)DSS: 150

Win Source Part Number: 1015934-IXFA6N120P. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: HiPerFET ™, Polar. Package: Tube. Standard Package: 50. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage... [See More]

• Package Type: TO-263; SOT3
• P_D: 250000

• Polarity: N-Channel
• T_J: -55 to 150

650V CoolMOS ™ N-channel automotive SJ power MOSFET CFD7A. The 50mOhm IPB65R050CFD7A in D2PAK 3-pin package is part of the automotive-qualified 650V CoolMOS ™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS ™ CFD7A offers higher reliability and... [See More]

• Package Type: TO-263; PG-TO263-3
• V_GS(off): 3.5 to 4.5

• Transistor Technology / Material: Si/SiC
• r_DS(on): 0.0500

MOSFET N-Ch 80A 80V OptiMOS3 TO263 [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 80

• Polarity: N-Channel
• I_DSS: 80000

MOSFET N-CH 40V 240A D2PAK-7 [See More]

• Package Type: TO-263; TO-263-7, D²Pak (6 Leads + Tab)
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 40

Win Source Part Number: 1016115-SUM10250E-GE3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: ThunderFET ®. Package: Tape & Reel (TR),Cut Tape (CT). Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type:... [See More]

• Package Type: TO-263; SOT3
• P_D: 375000

• Polarity: N-Channel
• T_J: -55 to 175

650V CoolMOS ™ N-channel automotive SJ power MOSFET CFD7A. The 50mOhm IPBE65R050CFD7A in D2PAK 7-pin package is part of the automotive-qualified 650V CoolMOS ™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS ™ CFD7A offers higher reliability... [See More]

• Package Type: TO-263; PG-TO263-7
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET N-Ch 25A 250V OptiMOS3 TO263 [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 25000

MOSFET N-CH 100V 190A D2PAK-7P [See More]

• Package Type: TO-263; TO-263-7, D²Pak (6 Leads + Tab)
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 100

Win Source Part Number: 1019219-SUM90220E-GE3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: ThunderFET ®. Package: Tape & Reel (TR),Cut Tape (CT). Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type:... [See More]

• Package Type: TO-263; SOT3
• P_D: 230000

• Polarity: N-Channel
• T_J: -55 to 175

OptiMOS ™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro... [See More]

• Package Type: TO-263; PG-TO263-7
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.1 to 3.3

HEXFET P-Ch MOSFET 74A 55V D2PAK [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 55

• Polarity: P-Channel
• I_DSS: 70000

MOSFET N-CH 60V 240A D2PAK [See More]

• Package Type: TO-263; TO-263-7, D²Pak (6 Leads + Tab)
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 60

Win Source Part Number: 1020565-IXTA10P50P. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Polar. Package: Tube. Standard Package: 50. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to Source Voltage (Vdss): 500 V. [See More]

• Package Type: TO-263; SOT3
• P_D: 300000

• Polarity: P-Channel
• T_J: -55 to 150

Combining a low RDS(on) with a wide safe operating area (SOA). OptiMOS ™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the... [See More]

• Package Type: TO-263; PG-TO263-7
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 4.1

MOSFET N-Ch 600V 23A CoolMOS P6 TO-263 [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 650

• Polarity: N-Channel
• I_DSS: 23800

MOSFET P-CH 60V 100A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: P-Channel; P-Channel
• V_(BR)DSS: 60

Win Source Part Number: 1021367-NTB110N65S3HF. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: FRFET ®, SuperFET ® III. Package: Tape & Reel. Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. [See More]

• Package Type: TO-263; SOT3
• P_D: 240000

• Polarity: N-Channel
• T_J: -55 to 150

Combining a low RDS(on) with a wide safe operating area (SOA). OptiMOS ™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 4.1

MOSFET StrongIRFET N-Ch 135V 129A D2PAK [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 135

• Polarity: N-Channel
• I_DSS: 129000

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 50

Win Source Part Number: 1028563-SIHL620STRL-GE3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 200 V. [See More]

• Package Type: TO-263; SOT3
• P_D: 3100 to 50000

• Polarity: N-Channel
• T_J: -55 to 150

40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package [See More]

• Package Type: TO-263; D2PAK
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2 to 4

MOSFET HEXFET N-Ch 100V 80A SMPS D2PAK [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 80000

MOSFET N-CH 49V 80A TO220-7 [See More]

• Package Type: TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 49

Win Source Part Number: 1031669-IXTA1N200P3HV. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Polar P3 ™. Package: Tube. Standard Package: 50. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage... [See More]

• Package Type: TO-263; SOT3
• P_D: 125000

• Polarity: N-Channel
• T_J: -55 to 150

40V Single N-Channel HEXFET Power MOSFET in a 7-pin D2Pak package. Applications. Automotive telematics control unit (TCU). Fuel-cell control unit (FCCU). Light electric vehicles (LEV). Benefits. Optimized for broadest availability from distribution partners. Product qualification according to JEDEC... [See More]

• Package Type: TO-263; D2PAK7P
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.2 to 3.9

MOSFET HEXFET N-Ch 40V 400A D2PAK7 [See More]

• Package Type: TO-263; D2PAK (TO-263)
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 40

MOSFET N-CH 55V 100A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 55

Win Source Part Number: 1037809-2SK3816-DL-1E. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel (TR). Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 60 V. [See More]

• Package Type: TO-263; SOT3
• P_D: 1650 to 50000

• Polarity: N-Channel
• T_J: 150

40 V Logic Level StrongIRFET ™ power MOSFET in D2PAK 7pin. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a... [See More]

• Package Type: TO-263; D2PAK7P
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 1 to 2.4

MOSFET HEXFET N-Ch 60V 293A D2PAK7 [See More]

• Package Type: TO-263; D2PAK (TO-263)
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 60

NOW NEXPERIA BUK6607-55C - 100A, [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 55

Win Source Part Number: 1037988-IXTA130N065T2. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: TrenchT2 ™. Package: Tube. Standard Package: 50. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage... [See More]

• Package Type: TO-263; SOT3
• P_D: 250000

• Polarity: N-Channel
• T_J: -55 to 175

Summary of Features. AEC qualified. MSL1 up to 260 °C peak reflow. 175 °C operating temperature. Green package (RoHS compliant). 100% Avalanche tested. Benefits. No charge pump required for high side drive. Simple interface drive circuit. World's lowest RDSon at 40V. Highest current... [See More]

• Package Type: TO-263; PG-TO263-7
• Transistor Technology / Material: Si/SiC

• Polarity: P-Channel; P
• V_GS(off): -4 to -2

MOSFET HEXFET N-Ch 75V 128A D2PAK [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 75

• Polarity: N-Channel
• I_DSS: 128000

SICFET N-CH 1700V 5.3A D2PAK [See More]

• Package Type: TO-263; TO-263-7 (Straight Leads)
• Transistor Technology / Material: SiCFET (Silicon Carbide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 1700

Win Source Part Number: 1045113-AOB66616L. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: AlphaSGT ™. Package: Tape & Reel. Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source... [See More]

• Package Type: TO-263; SOT3
• P_D: 8300 to 125000

• Polarity: N-Channel
• T_J: -55 to 150

950 V CoolMOS ™ PFD7 superjunction MOSFET in D2PAK package. The 950 V CoolMOS ™ PFD7 superjunction MOSFET (IPB95R130PFD7) complements the CoolMOS ™ 7 offering for high power lighting and industrial SMPS applications. The IPB95R130PFD7 in the TO-220-3 package features RDS(on) of 130... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

MOSFET HEXFET N-Ch 100V 190A D2PAK7 [See More]

• Package Type: TO-263; D2PAK (TO-263)
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 100

SICFET N-CH 1700V 5.3A D2PAK-7 [See More]

• Package Type: TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
• Transistor Technology / Material: SiCFET (Silicon Carbide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 1700

Win Source Part Number: 1045114-AOB66916L. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: AlphaSGT ™. Package: Tape & Reel. Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source... [See More]

• Package Type: TO-263; SOT3
• P_D: 8300 to 277000

• Polarity: N-Channel
• T_J: -55 to 150

950 V CoolMOS ™ PFD7 superjunction MOSFET in TO-263 package. The 950 V CoolMOS ™ PFD7 superjunction MOSFET (IPB95R310PFD7) complements the CoolMOS ™ 7 offering for high power lighting and industrial SMPS applications. The IPB95R310PFD7 in the TO-263 package features RDS(on) of 310... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

MOSFET HEXFET N-Ch 100V 180A D2PAK [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 180000

SICFET N-CH 1200V 30A TO263-7 [See More]

• Package Type: TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
• Transistor Technology / Material: SiCFET (Silicon Carbide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 1200

Win Source Part Number: 1058728-FDB8132_F085. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101, PowerTrench ®. Package: Tape & Reel. Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type:... [See More]

• Package Type: TO-263; SOT3
• P_D: 341000

• Polarity: N-Channel
• T_J: -55 to 175

StrongIRFET ™ 2 single N-channel power MOSFET 40 V in D ²PAK package. Infineon's StrongIRFET ™ 2 power MOSFET 40 V features low RDS(on) of 1.25 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features. Broad availability from... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.1 to 3.4

MOSFET Digital Audio 200V 18A D2PAK [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 200

• Polarity: N-Channel
• I_DSS: 18000

MOSFET N-CH 40V 274A DDPAK [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 40

Win Source Part Number: 1059662-FQB9N08TM. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: QFET ®. Package: Tape & Reel (TR). Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source... [See More]

• Package Type: TO-263; SOT3
• P_D: 3750 to 40000

• Polarity: N-Channel
• T_J: -55 to 175

OptiMOS ™ 5 single N-channel Linear FET 2 100 V, 2,1 m Ω, 176 A in D ²PAK 3-pin. The OptiMOS ™ 5 Linear FET 2 technology enables best-in-class trade-off between on-state resistance and linear mode capability. Combined with the D2PAK 3-pin package, IPB021N10NM5LF2 is designed... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.3 to 3.9

MOSFET HEXFET N-Ch 100V 61A D2PAK [See More]

• Package Type: TO-263; D2PAK (TO-263)
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 61000

MOSFET N-CH 650V 44A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 650

Win Source Part Number: 1061186-NTBGS2D5N06C. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 60 V. Current... [See More]

• Package Type: TO-263; SOT3
• P_D: 3700 to 136000

• Polarity: N-Channel
• T_J: -55 to 175

60V 210A 255W 1.5m Ω@10V,100A 1.5V@250uA null TO-263 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_GS(off): 1.5

• V_(BR)DSS: 60
• r_DS(on): 0.0015

MOSFET P-CH 60V 38A TO263-2 [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 38000

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

MOSFET P-CH 100V 27A TO263-2 [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 27000

• V_(BR)DSS: 100
• Packing Method: Bulk; Bulk

Our new 1700V, 750mOhm Silicon Carbide (SiC) MOSFETs are presented in TO-263-7L package. The separated source pin reduces significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175... [See More]

• Package Type: TO-263; TO-263-7L
• V_(BR)DSS: 1700

• MOSFET Operating Mode: Enhancement
• I_DSS: 4500

60V 180A 2.5m Ω@10V,20A 222W 2.8V@250uA null TO-263 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_GS(off): 2.8

• V_(BR)DSS: 60
• r_DS(on): 0.0025

MOSFET N-CH 100V 83A TO-263 [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 83000

• V_(BR)DSS: 100
• Packing Method: Tape Reel; Tape & Reel (TR)

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 55000

• V_(BR)DSS: 60
• Packing Method: Bulk; Bulk

650V 20A 190m Ω 126W 3.5V TO-263 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_GS(off): 3.5

• V_(BR)DSS: 650
• r_DS(on): 0.1900

MOSFET N-CH 60V 100A TO263-2 [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 100000

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR)

MOSFET N-CH 60V 40A TO263-2 [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 40000

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR)

700V 15A 300m Ω 118W 3.5V TO-263 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_GS(off): 3.5

• V_(BR)DSS: 700
• r_DS(on): 0.3000

MOSFET N-CH 60V 100A TO263-2 [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Packing Method: Tape Reel; Tape & Reel (TR)

• V_(BR)DSS: 60

MOSFET N-CH 75V 100A TO263-2 [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Packing Method: Tape Reel; Tape & Reel (TR)

• V_(BR)DSS: 75

100V 214A 3.4m Ω 330W 3V TO-263 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_GS(off): 3

• V_(BR)DSS: 100
• r_DS(on): 0.0034

MOSFET N-CH 60V 100A SMP-FD [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 100000

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Bulk; Tape & Reel (TR),Bulk

SIC_DISCRETE [See More]

• Package Type: TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• I_DSS: 187000

• V_(BR)DSS: 1200
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

100V 176A 229W 3.7m Ω 3V TO-263 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_GS(off): 3

• V_(BR)DSS: 100
• r_DS(on): 0.0037

MOSFET N-CH 75V 160A D2PAK [See More]

• Package Type: TO-263; TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
• I_DSS: 160000

• V_(BR)DSS: 75
• Packing Method: Tape Reel; Tape & Reel (TR)

MOSFET N-CH 55V 135A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 135000

• V_(BR)DSS: 55
• Packing Method: Bulk; Bulk

49V 80A 6.5m Ω@36A,10V 300W 2V@240uA N Channel TO-263-7-1 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 49

• Polarity: N-Channel
• V_GS(off): 2

MOSFET N-CH 600V 10A TO263 [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 10000

• V_(BR)DSS: 600
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 25000

• V_(BR)DSS: 50
• Packing Method: Bulk; Bulk

TO-263 MOSFETs ROHS [See More]

• Package Type: TO-263

MOSFET N-CH 1000V 14A D3PAK [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 14000

• V_(BR)DSS: 1000
• Packing Method: Bulk; Bulk

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 24000

• V_(BR)DSS: 60
• Packing Method: Bulk; Bulk

100V 120A 227W 3.7m Ω@10V,50A 4V@250uA N Channel TO-263 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 100

• Polarity: N-Channel
• V_GS(off): 4

MOSFET N-CH 24V 240A D2PAK [See More]

• Package Type: TO-263; TO-263-7, D2PAK (6 Leads + Tab)
• I_DSS: 240000

• V_(BR)DSS: 24
• Packing Method: Tube; Tube

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-263; TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
• I_DSS: 33000

• V_(BR)DSS: 55
• Packing Method: Bulk; Bulk

85V 120A 3.8m Ω@10V,50A 208W 4V@250uA N Channel TO-263 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 85

• Polarity: N-Channel
• V_GS(off): 4

MOSFET N-CH 75V 240A D2PAK-7 [See More]

• Package Type: TO-263; TO-263-7, D2PAK (6 Leads + Tab)
• I_DSS: 240000

• V_(BR)DSS: 75
• Packing Method: Tape Reel; Tape & Reel (TR)

NEXPERIA BUK7107 - N-CHANNEL TRE [See More]

• Package Type: TO-263; TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
• I_DSS: 75000

• V_(BR)DSS: 55
• Packing Method: Bulk; Bulk

100V 120A 227W 4.2m Ω@10V,50A 4V@250uA N Channel TO-263 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 100

• Polarity: N-Channel
• V_GS(off): 4

MOSFET N-CH 100V 180A TO263 [See More]

• Package Type: TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• I_DSS: 180000

• V_(BR)DSS: 100
• Packing Method: Bulk; Bulk

MOSFET N-CH 55V 75A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 75000

• V_(BR)DSS: 55
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

85V 120A 5.2m Ω@10V,50A 174W 4V@250uA N Channel TO-263 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 85

• Polarity: N-Channel
• V_GS(off): 4

MOSFET N-CH 40V 240A D2PAK [See More]

• Package Type: TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• I_DSS: 240000

• V_(BR)DSS: 40
• Packing Method: Tube; Tube

MOSFET N-CH 40V 120A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 120000

• V_(BR)DSS: 40
• Packing Method: Tape Reel; Tape & Reel (TR)

68V 83A 6.8m Ω@10V,40A 111W 3V@250uA N Channel TO-263-2 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 68

• Polarity: N-Channel
• V_GS(off): 3

MOSFET P-CH 60V 100A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 100000

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR)

MOSFET N-CH 60V 200A D2PAK-7 [See More]

• Package Type: TO-263; TO-263-7, D2PAK (6 Leads + Tab)
• Packing Method: Tape Reel; Tape & Reel (TR)

• V_(BR)DSS: 60

100V 200A 300W 3.4m Ω@100A,10V 3.4V@250uA null TO-263-3 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_GS(off): 3.4

• V_(BR)DSS: 100
• r_DS(on): 0.0034

MOSFET N-CH 55V 33A TO263-5 [See More]

• Package Type: TO-263; TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
• I_DSS: 33000

• V_(BR)DSS: 55
• Packing Method: Tape Reel; Tape & Reel (TR)

MOSFET N-CH 55V 75A SOT426 [See More]

• Package Type: TO-263; TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
• I_DSS: 75000

• V_(BR)DSS: 55
• Packing Method: Tape Reel; Tape & Reel (TR)

150V 11m Ω@10V 3V N Channel TO-263 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 150

• Polarity: N-Channel
• V_GS(off): 3

MOSFET N-CH 55V 100A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 100000

• V_(BR)DSS: 55
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

SICFET N-CH 1000V 35A TO263-7 [See More]

• Package Type: TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• I_DSS: 35000

• V_(BR)DSS: 1000
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

60V 195A 6.2m Ω@10V 4V P Channel TO-263 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 60

• Polarity: P-Channel
• V_GS(off): 4

NEXPERIA BUK6610 - N-CHANNEL TRE [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 78000

• V_(BR)DSS: 75
• Packing Method: Bulk; Bulk

SICFET N-CH 1200V 30A TO263-7 [See More]

• Package Type: TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• I_DSS: 30000

• V_(BR)DSS: 1200
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

100V 35A 104W 50m Ω@10V,10A 2.5V@250uA P Channel TO-263 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 100

• Polarity: P-Channel
• V_GS(off): 2.5

NEXPERIA BUK6C3R3 - N-CHANNEL TR [See More]

• Package Type: TO-263; TO-263-7, D2PAK (6 Leads + Tab)
• I_DSS: 181000

• V_(BR)DSS: 75
• Packing Method: Bulk; Bulk

MOSFET BVDSS: 31V~40V TO263 T &R [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 192000

• V_(BR)DSS: 40
• Packing Method: Tape Reel; Tape & Reel (TR)

30V 120A 3.5m Ω@10V,20A 200W 2.5V@250uA P Channel TO-263 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 30

• Polarity: P-Channel
• V_GS(off): 2.5

MOSFET N-CH 40V 75A SOT426 [See More]

• Package Type: TO-263; TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
• I_DSS: 75000

• V_(BR)DSS: 40
• Packing Method: Tape Reel; Tape & Reel (TR)

MOSFET N-CH 60V 22A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 22000

• V_(BR)DSS: 60
• Packing Method: Tape Reel; Tape & Reel (TR)

200V 70A 33m Ω@10V,30A 200W 5V@250uA N Channel TO-263-2 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 200

• Polarity: N-Channel
• V_GS(off): 5

MOSFET N-CH 40V 75A D2PAK [See More]

• Package Type: TO-263; TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
• I_DSS: 75000

• V_(BR)DSS: 40
• Packing Method: Bulk; Bulk

FQB7N60 - MOSFET N-CHANNEL SINGL [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 7400

• V_(BR)DSS: 600
• Packing Method: Bulk; Bulk

60V 120A 188W 7.5m Ω@10V,60A 4V@250uA N Channel TO-263-2 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 60

• Polarity: N-Channel
• V_GS(off): 4

SICFET N-CH 1700V 5.3A D2PAK [See More]

• Package Type: TO-263; TO-263-7 (Straight Leads)
• I_DSS: 5300

• V_(BR)DSS: 1700
• Packing Method: Bulk; Bulk

MOSFET N-CH 600V 7.5A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 7500

• V_(BR)DSS: 600
• Packing Method: Tape Reel; Tape & Reel (TR)

30V 90A 96W 6m Ω@10V,45A 3V@250uA P Channel TO-263-2 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 30

• Polarity: P-Channel
• V_GS(off): 3

SICFET N-CH 1700V 5.3A D2PAK-7 [See More]

• Package Type: TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• I_DSS: 5300

• V_(BR)DSS: 1700
• Packing Method: Tape Reel; Tape & Reel (TR)

SIC MOSFET N-CH 3A TO263-7 [See More]

• Package Type: TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• I_DSS: 3000

• V_(BR)DSS: 1700
• Packing Method: Tube; Tube

80V 200A 345W 3.5m Ω@10V,100A 4V@250uA N Channel TO-263-2 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 80

• Polarity: N-Channel
• V_GS(off): 4

MOSFET N-CH 40V 274A DDPAK [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 274000

• V_(BR)DSS: 40
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

N100V, 120A,RD <4.5M@10V,VTH2V~4V [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 120000

• V_(BR)DSS: 100
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

TO-263-2L MOSFETs ROHS [See More]

• Package Type: TO-263

MOSFET N-CH 40V 194A DDPAK [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 194000

• V_(BR)DSS: 40
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

N-CHANNEL POWER MOSFET [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 75000

• V_(BR)DSS: 55
• Packing Method: Bulk; Bulk

135V 200A 3.8m Ω@10V,50A 375W 3V@250uA N Channel TO-263-6 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 135

• Polarity: N-Channel
• V_GS(off): 3

MOSFET N-CH 650V 35A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 35000

• V_(BR)DSS: 650
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

N CHANNEL ULTRAFET 100V, 75A, 1 [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 75000

• V_(BR)DSS: 100
• Packing Method: Bulk; Bulk

100V 120A 187.5W 4.8m Ω@10V,50A 3V@250uA N Channel TO-263-2 MOSFETs ROHS [See More]

• Package Type: TO-263
• V_(BR)DSS: 100

• Polarity: N-Channel
• V_GS(off): 3

MOSFET N-CH 650V 24A TO263 [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 24000

• V_(BR)DSS: 650
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

AUTOMOTIVE MOSFET [See More]

• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• I_DSS: 21000 to 135000

• V_(BR)DSS: 100
• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR