Tray Metal-Oxide Semiconductor FET (MOSFET)

Manufacturer: MACOM Technology Solutions. Win Source Part Number: 1324218-UF2840G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Packaging: Tray. Standard Package: 20. Voltage - Rated: 65 V. Frequency: 100MHz ~ 500MHz. Current - Test: 500 mA. Gain: 10dB. Transistor... [See More]

• Packing Method: Tray; Tray
• Package Type: SOT3

• Polarity: N-Channel

EasyPACK ™ 1B Module with fast TRENCHSTOP ™ IGBT3, Rapid 1 diode and PressFIT / NTC. Summary of Features. Automotive High Speed IGBT H3 and Rapid 1 Diode. Low Switching Losses. Low inductive design. 2.5 kV AC 1min Insulation. High Creepage and Clearance Distances. Integrated NTC... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-EASY1BA-311

Manufacturer: Microchip Technology. Win Source Part Number: 1265434-TC8020K6-G. Packaging: Tray. Mounting Style: SMD. FET Feature: Standard. Transistor Polarity: 6 N and 6 P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 56-QFN (8x8). Temperature Range - Operating:... [See More]

• Packing Method: Tray; Tray
• MOSFET Operating Mode: Enhancement

• Polarity: P-Channel; 6 N and 6 P-Channel
• V_(BR)DSS: 200

EasyPACK ™ 1B Module with fast TRENCHSTOP ™ IGBT3, Rapid 1 diode and PressFIT / NTC. Summary of Features. Automotive High Speed IGBT H3 and Rapid 1 Diode. Low Switching Losses. Low inductive design. 2.5 kV AC 1min Insulation. High Creepage and Clearance Distances. Integrated NTC... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-EASY1BA-311

Manufacturer: ON Semiconductor. Win Source Part Number: 1127699-2SK3746. Packaging: Tray. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-3PB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tray; Tray
• V_(BR)DSS: 1500

• Polarity: N-Channel; N-Channel
• P_D: 2500 to 110000

EasyPACK ™ 2B 750V, 300A half bridge automotive qualified IGBT module. The FF300R08W2P2_B11A is a very compact and flexible product for inverter applications of hybrid and electric vehicles. This 750 V, automotive power module is optimized for inverter applications of hybrid and electric... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-EASY2B-3

Manufacturer: ON Semiconductor. Win Source Part Number: 1127701-2SK3748. Packaging: Tray. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-3PML. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tray; Tray
• V_(BR)DSS: 1500

• Polarity: N-Channel; N-Channel
• P_D: 3000 to 65000

The power module implements the second generation CoolSiC ™ Automotive MOSFET 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles. Summary of Features. New semicond. material -... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HDSICXT-1

Manufacturer: ON Semiconductor. Win Source Part Number: 1127770-2SK4126. Packaging: Tray. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-3PB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tray; Tray
• V_(BR)DSS: 650

• Polarity: N-Channel; N-Channel
• P_D: 2500 to 170000

The power module implements the second generation CoolSiC ™ Automotive MOSFET 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles. Summary of Features. Short-time operation at... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HDSICXT-1

Manufacturer: Microsemi Corporation. Win Source Part Number: 1191408-JANSR2N7389. Packaging: Tray. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-205AF (TO-39). Drive Voltage (Max Rds On, Min... [See More]

• Packing Method: Tray; Tray
• V_(BR)DSS: 100

• Polarity: P-Channel; P-Channel
• P_D: 25000

The power module implements the second generation CoolSiC ™ Automotive MOSFET 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles. Summary of Features. New semicond. material... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HDSICXT-1

Manufacturer: Microchip Technology. Win Source Part Number: 044763-MIC4103YM. Packaging: Tray. Mounting: SMD (SMT). Channel Type: Independent. Input Type: Non-Inverting. Driven Configuration: Half-Bridge. Number of Drivers: 2. Gate Type: N-Channel MOSFET. Logic Voltage - VIL, VIH: 3V, 8V. Current -... [See More]

• Packing Method: Tray; Tray
• T_J: -40 to 125

• Polarity: N-Channel
• Package Type: SOT3; 8-SOIC

The power module implements the second generation CoolSiC ™ Automotive MOSFET 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles. Summary of Features. Short-time operation at... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HDSICXT-1

Manufacturer: ON Semiconductor. Win Source Part Number: 763017-2SK4124. Packaging: Tray. Mounting Style: Through Hole. Operating Temperature Range: 150 °C (TJ). Package: TO-3P-3, SC-65-3. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 20A (Ta). Part Status: Obsolete(EOL). [See More]

• Packing Method: Tray; Tray
• T_J: 150

• P_D: 2500 to 170000
• Package Type: TO-3; SOT3

The power module implements Infineon ’s next generation chip technology EDT3 (Si IGBT) 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes. Summary of Features. VCES = 750 V. ICN = 1150 A / ICRM = 2300 A. Blocking voltage 750 V. Low VCE,sat. [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HDG2XT-7661

Manufacturer: ON Semiconductor. Win Source Part Number: 763020-2SK4221. Packaging: Tray. Mounting Style: Through Hole. Operating Temperature Range: 150 °C (TJ). Package: TO-3P-3, SC-65-3. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 26A (Ta). Part Status: Obsolete(EOL). [See More]

• Packing Method: Tray; Tray
• T_J: 150

• P_D: 2500 to 220000
• Package Type: TO-3; SOT3

HybridPACK ™ 1 is an automotive qualified power module designed for Hybrid Electric Vehicle (HEV) applications. Summary of Features. Complete 3-phase Six-Pack with NTC in one compact module. 650V Trench-Field-Stop IGBT3 with matching emitter controlled 650V Emitter Controlled 3 diode. Extended... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HP1-311

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770062-BLC9G20LS-470AVTZ. Packaging: Tray. Package: SOT-1258-3. Frequency: 1.81GHz ~ 1.88GHz. Current - Test: 400mA. Gain: 15.7dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 28V. Power - Output: 470W. Family Name:... [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

The power module implements Infineon ’s next generation IGBT chip technology 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes. Summary of Features. VCES = 1200V, ICN = 520A. Low VCE,sat & switching losses. Low Qg and Crss. Low... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HDG2XT-7611

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770063-BLC9G20XS-400AVTZ. Packaging: Tray. Package: SOT-1258-7. Frequency: 1.81GHz ~ 1.88GHz. Current - Test: 800mA. Gain: 16.2dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 32V. Power - Output: 570W. Family Name:... [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

The HybridPACK ™ DC6i is a very compact six-pack module (750V/650A) optimized for hybrid and electrical vehicles. This power module complements the benchmark EDT2 IGBT generation with Direct Cooled Base Plate with Ribbon Bonds, NTC temperature sensor and PressFIT contact technology for up to... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HDC6I-7511

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770076-BLF178P,112. Packaging: Tray. Package: SOT539A. Current Rating: 88A. Frequency: 108MHz. Current - Test: 40mA. Gain: 28.5dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 50V. Power - Output: 1200W. Family Name: BLF178P. [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

The HybridPACK ™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS660R08A6P2FB comes with a flat baseplate. Summary of Features. Blocking voltage 750V. Low VCEsat. Low Switching Losses. Low Qg... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HYBRIDD-1

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770077-BLF178XR,112. Packaging: Tray. Package: SOT539A. Frequency: 108MHz. Current - Test: 40mA. Gain: 28dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 50V. Power - Output: 1400W. Family Name: BLF178XR. Categories: Discrete... [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

The HybridPACK ™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2LB comes with a flat baseplate. Summary of Features. Blocking voltage 750V. Low VCEsat. Low Switching Losses. Low Qg... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HYBRIDD-1

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770079-BLF182XRSU. Packaging: Tray. Package: SOT-1121B. Frequency: 108MHz. Current - Test: 100mA. Gain: 28dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 50V. Power - Output: 250W. Family Name: BLF182XRS. Categories: Discrete... [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

EasyPACK ™ 2B Modules with TRENCHSTOP ™ IGBT3, Emitter Controlled 3 diode and PressFIT / NTC. Summary of Features. Increased blocking voltage capability to 650V. Low Switching Losses. Low VCEsat. Trench IGBT 3. Al2O3 Substrate with Low Thermal Restistance. High Power Density. Integrated... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-EASY2B-3

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770089-BLF2324M8LS200PU. Packaging: Tray. Package: SOT539B. Frequency: 2.3GHz ~ 2.4GHz. Current - Test: 1.74A. Gain: 17.2dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 28V. Power - Output: 60W. Family Name: BLF2324M8LS200P. [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

The HybridPACK ™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2B comes with a baseplate with bonded cooling structure. Summary of Features. Blocking voltage 750V. Low VCEsat. Low... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HYBRIDD-1

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770105-BLF573S,112. Packaging: Tray. Package: SOT-502B. Current Rating: 42A. Frequency: 225MHz. Current - Test: 900mA. Gain: 27.2dB. Transistor Type: LDMOS. Voltage - Test: 50V. Power - Output: 300W. Family Name: BLF573S. Categories: Discrete... [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

The HybridPACK ™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2LB comes with a baseplate with bonded cooling structure. Summary of Features. Blocking voltage 750V. Low VCEsat. Low... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HYBRIDD-1

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770107-BLF578,112. Packaging: Tray. Package: SOT539A. Current Rating: 88A. Frequency: 225MHz. Current - Test: 40mA. Gain: 24dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 50V. Power - Output: 1200W. Family Name: BLF578. [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

The HybridPACK ™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The direct cooled baseplate with PinFin structure in the FS820R08A6P2 product best utilizes the implemented chipset and shows superior thermal... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HYBRIDD-1

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770108-BLF578XR,112. Packaging: Tray. Package: SOT539A. Frequency: 225MHz. Current - Test: 40mA. Gain: 23.5dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 50V. Power - Output: 1400W. Family Name: BLF578XR. Categories: Discrete... [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

HybridPACK ™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. Find appropriate Automotive EiceDRIVER ™. Summary of Features. Blocking Voltage 750V. Low VCEsat. Low Switching Losses. Low QG and Cres. Low... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HYBRIDD-1

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770109-BLF645,112. Packaging: Tray. Package: SOT-540A. Current Rating: 32A. Frequency: 1.3GHz. Current - Test: 900mA. Gain: 16.5dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 32V. Power - Output: 100W. Family Name: BLF645. [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

The HybridPACK ™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS950R08A6P2B comes with a PinFin baseplate and performance ceramic. Summary of Features. Blocking voltage 750V. Low VCEsat. Low... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HDG1-7511

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770139-BLF6G27-135,112. Packaging: Tray. Package: SOT-502A. Current Rating: 34A. Current - Test: 1.2A. Transistor Type: LDMOS. Voltage - Test: 32V. Power - Output: 20W. Part Status: Obsolete(EOL). Family Name: BLF6G27-135. Categories: Discrete... [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

The HybridPACK ™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS950R08A6P2LB comes with a PinFin baseplate and performance ceramic. Summary of Features. Blocking voltage 750V. Low VCEsat. Low... [See More]

• Packing Method: Tray; TRAY

• Package Type: AG-HDG1-7511

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770173-BLF872,112. Packaging: Tray. Package: SOT800. Current Rating: 41A. Current - Test: 900mA. Transistor Type: LDMOS. Voltage - Test: 32V. Power - Output: 300W. Part Status: Obsolete(EOL). Family Name: BLF872. Categories: Discrete... [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

Booster 1200 V CoolSiC ™ MOSFET Module. EasyPACK ™ 1B 1200 V, 33 m Ω and 3 MPPTs booster module with CoolSiC ™ MOSFET enhanced generation 1, NTC and PressFIT Contact Technology. Summary of Features. Best-in-class packages with 12 mm height. Combination of leading edge WBG... [See More]

• Packing Method: Tray; TRAY
• Package Type: AG-EASY1B

• Transistor Technology / Material: Silicon carbide

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770178-BLF888A,112. Packaging: Tray. Package: SOT539A. Frequency: 860MHz. Current - Test: 1.3A. Gain: 21dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 50V. Power - Output: 600W. Family Name: BLF888A. Categories: Discrete... [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

2000 V, 60 A Boost EasyPACK ™ 3B CoolSiC ™ MOSFET Module. EasyPACK ™ 3B CoolSiC ™ MOSFET 2000 V 60 A Boost module with PressFit PIN and NTC. Summary of Features. Best in Class packages with 12 mm height. 2 kV CoolSiC ™ MOSFET with enhanced generation 1 trench... [See More]

• Packing Method: Tray; TRAY
• Package Type: AG-EASY3B

• Transistor Technology / Material: Silicon carbide

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770183-BLF888EU. Packaging: Tray. Package: SOT539A. Frequency: 600MHz ~ 700MHz. Current - Test: 600mA. Gain: 17dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 50V. Power - Output: 750W. Family Name: BLF888EU. Categories:... [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

EasyPACK ™ 2B CoolSiC ™ MOSFET 3-level module 2000 V, 6 m Ω with NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic. Summary of Features. Best in Class packages with 12mm height. Leading edge WBG material. Very low module stray inductance. PressFIT... [See More]

• Packing Method: Tray; TRAY
• Package Type: AG-EASY2B

• Transistor Technology / Material: Silicon carbide

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770218-BLL6H0514-25,112. Packaging: Tray. Package: SOT467C. Current Rating: 2.5A. Frequency: 1.2GHz ~ 1.4GHz. Current - Test: 50mA. Gain: 21dB. Transistor Type: LDMOS. Voltage - Test: 50V. Power - Output: 25W. Family Name: BLL6H0514-25. [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

EasyDUAL ™ 2B CoolSiC ™ MOSFET half-bridge module 1200 V, 11 m Ω G1 with integrated NTC temperature sensor, PressFIT contact technology and pre-applied thermal interface material (TIM). Summary of Features. Best-in-class packages with 12 mm height. Leading edge WBG material. Very... [See More]

• Packing Method: Tray; TRAY
• Package Type: AG-EASY2B

• Transistor Technology / Material: Silicon carbide

Manufacturer: Ampleon USA Inc. Win Source Part Number: 770219-BLL6H1214-500,112. Packaging: Tray. Package: SOT539A. Frequency: 1.2GHz ~ 1.4GHz. Current - Test: 150mA. Gain: 17dB. Transistor Type: LDMOS (Dual), Common Source. Voltage - Test: 50V. Power - Output: 500W. Family Name: BLL6H1214-500. [See More]

• Packing Method: Tray; Tray

• Package Type: SOT3

Self-Aligning Silicon Gate Sturcture. Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage - 0.6V typ. [See More]

• Packing Method: Tray
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• V_(BR)DSS: 25