SOT89 Metal-Oxide Semiconductor FET (MOSFET)

IC TRANS RF LDMOS [See More]

• Package Type: SOT89; TO-243AA

• Transistor Technology / Material: LDMOS

N-Channel Small Signal MOSFET 240 V in SOT-89 package. Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels... [See More]

• Package Type: SOT89; PG-SOT89-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• MOSFET Operating Mode: Enhancement

MOSFET N-chan OptiMOS-3 60V 3.2A SOT89 [See More]

• Package Type: SOT89; SOT-89

Win Source Part Number: 1049317-BLC6G27-100,112. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tube. Standard Package: 20. Voltage - Rated: 28 V. Power - Output: 14W. Package / Case: SOT-895A. Supplier Device Package: SOT-895A. ECCN: EAR99. Fake Threat In... [See More]

• Package Type: SOT3; SOT89

FET RF 7V 2GHZ SOT-89 [See More]

• Package Type: SOT89; TO-243AA

• Transistor Technology / Material: E-pHEMT

MOSFET,Nch,Vdss=60V,Id=2A,MPT3 [See More]

• Package Type: SOT89; SOT-89

Win Source Part Number: 1187132-AFT05MS003NT1. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel. Standard Package: 1,000. Voltage - Rated: 30 V. Frequency: 520MHz. Current - Test: 100 mA. Gain: 20.8dB. Transistor Type: LDMOS. Voltage - Test:... [See More]

• Package Type: SOT3; SOT89

POWER, 1A, 20V, N-CHANNEL MOSFET [See More]

• Package Type: SOT89; TO-243AA

• Polarity: N-Channel; N-Channel

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -500 [See More]

• Package Type: SOT89; SOT-89
• MOSFET Operating Mode: Enhancement

• Polarity: P-Channel

Win Source Part Number: 959349-CPC3909CTR. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 1,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. FET Feature: Depletion Mode. Drain to Source... [See More]

• Package Type: SOT3; SOT89
• MOSFET Operating Mode: Depletion

• Polarity: N-Channel
• P_D: 1100

FET RF 18V 870MHZ [See More]

• Package Type: SOT89; TO-243AA

• Transistor Technology / Material: LDMOS

Infineon MOSFET BSS225 H6327 [See More]

• Package Type: SOT89; SOT-89

Win Source Part Number: 984839-TP2435N8-G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 2,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to Source Voltage (Vdss): 350 V. Current... [See More]

• Package Type: SOT3; SOT89
• P_D: 1600

• Polarity: P-Channel
• T_J: -55 to 150

MOSFET P-CH 240V 200MA SOT89 [See More]

• Package Type: SOT89; TO-243AA
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: P-Channel; P-Channel
• V_(BR)DSS: 240

Infineon MOSFET BSS225 H6327 [See More]

• Package Type: SOT89; SOT-89

Manufacturer: ON Semiconductor. Win Source Part Number: 158803-2SJ613. Category: Discrete Semiconductor Products. Family: JFETs(Junction Field Effect). Family Name: 2SJ613. Alternative Parts (Cross-Reference): TSM2831CY;. Introduction Date: September 10, 2002. ECCN: EAR99. Estimated EOL Date: Not... [See More]

• Package Type: SOT3; SOT89

MOSFET N-CH 250V 360MA SOT89-3 [See More]

• Package Type: SOT89; TO-243AA
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 250

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V [See More]

• Package Type: SOT89; SOT-89
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel

Manufacturer: ON Semiconductor. Win Source Part Number: 158998-2SK1467. Category: Discrete Semiconductor Products. Family: JFETs(Junction Field Effect). Family Name: 2SK1467. Introduction Date: August 26, 2004. ECCN: EAR99. Estimated EOL Date: Obsolete / End of life. Popularity: Low. Fake Threat In... [See More]

• Package Type: SOT3; SOT89

MOSFET N-CH 300V 210MA SOT89 [See More]

• Package Type: SOT89; TO-243AA
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 300

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V [See More]

• Package Type: SOT89; SOT-89
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel

Manufacturer: Sanken. Win Source Part Number: 159837-2SK3120. Category: Discrete Semiconductor Products. Family: JFETs(Junction Field Effect). Family Name: 2SK3120. Introduction Date: August 26, 2004. ECCN: EAR99. Estimated EOL Date: Obsolete / End of life. Popularity: Low. Fake Threat In the Open... [See More]

• Package Type: SOT3; SOT89

MOSFET N-CH 60V 4.1A SOT89-3 [See More]

• Package Type: SOT89; TO-243AA
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 60

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 50V, [See More]

• Package Type: SOT89; SOT-89
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel

Manufacturer: Rohm Semiconductor. Win Source Part Number: 160558-2SK680A. Category: Discrete Semiconductor Products. Family: JFETs(Junction Field Effect). Family Name: 2SK680A. Alternative Parts (Cross-Reference): 2SK680A-T2; 2SK680A-T1; 2SK680A-T1-AZ; 2SK680A-AZ;. Introduction Date: March 03, 1998. [See More]

• Package Type: SOT3; SOT89

MOSFET N-CH 90V 360MA TO243AA [See More]

• Package Type: SOT89; TO-243AA
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 90

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 50V, [See More]

• Package Type: SOT89; SOT-89
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel

Manufacturer: Renesas Electronics America. Win Source Part Number: 160559-2SK680A-T1. Category: Discrete Semiconductor Products. Family: JFETs(Junction Field Effect). Family Name: 2SK680A. Alternative Parts (Cross-Reference): 2SK680A; 2SK680A-T2; 2SK680A-T1-AZ; 2SK680A-AZ;. Introduction Date: March... [See More]

• Package Type: SOT3; SOT89

N100V, 5A,RD <130M@10V,VTH1V~2V, [See More]

• Package Type: SOT89; TO-243AA
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 100

MOSFET, DEPLETION-MODE, 250V, 6 Ohm [See More]

• Package Type: SOT89; SOT-89

• MOSFET Operating Mode: Depletion

Manufacturer: Infineon Technologies. Win Source Part Number: 237381-BSS192P E6327. Category: Discrete Semiconductor Products. Family: FETs - Single. Family Name: BSS192P. Alternative Parts (Cross-Reference): BSS192P; BSS192PE6327T; BSS192PL6327XT; ZVP4424ZTA;. Introduction Date: July 24, 2002. ECCN:... [See More]

• Package Type: SOT3; SOT89

MOSFET P-CH 60V 3A SOT89/PCP-1 [See More]

• Package Type: SOT89; TO-243AA
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: P-Channel; P-Channel
• V_(BR)DSS: 60

MOSFET, DEPLETION-MODE, 350V, 35 Ohm [See More]

• Package Type: SOT89; SOT-89

• MOSFET Operating Mode: Depletion

Manufacturer: ON Semiconductor. Win Source Part Number: 1236508-PCP1402-TD-H. Packaging: Reel - TR. Operating Temperature Range: 150 °C (TJ). Package: TO-243AA. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 1.2A (Ta). Family Name: PCP1402. Categories: Discrete... [See More]

• Package Type: SOT3; SOT89
• T_J: 150

• P_D: 3500
• Packing Method: Tape Reel; Reel - TR

MOSFET N-CH 20V 4A SOT89 [See More]

• Package Type: SOT89; TO-243AA
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 20

MOSFET, N-CHANNEL, 100V, 1.5 Ohm [See More]

• Package Type: SOT89; SOT-89

• Polarity: N-Channel

Manufacturer: Microchip Technology. Win Source Part Number: 1271475-TN2425N8-G. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: SOT-89-3. Drive Voltage (Max Rds On, Min Rds On): 3V, 10V. [See More]

• Package Type: SOT3; SOT89
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 25

MOSFET N-Channel 100V 1.4A SOT89 [See More]

• Package Type: SOT89; SOT-89

• Polarity: N-Channel

Manufacturer: IXYS Integrated Circuits Division. Win Source Part Number: 803481-CPC3708CTR. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. FET Feature: Depletion Mode. Drain to Source Voltage (Vdss): 350V. Supplier Device Package: SOT-89. Drive Voltage... [See More]

• Package Type: SOT3; SOT89
• MOSFET Operating Mode: Depletion

• Polarity: N-Channel
• P_D: 1100

250V N-Channel Enhancement MOSFET SOT-89 [See More]

• Package Type: SOT89; SOT-89
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel

Manufacturer: Microchip Technology. Win Source Part Number: 1271493-TN5335N8-G. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-243AA (SOT-89). Drive Voltage (Max Rds On, Min Rds On):... [See More]

• Package Type: SOT3; SOT89
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 350

MOSFET N-CH 30V 3.3A Automotive SOT-89 [See More]

• Package Type: SOT89; SOT-89

Manufacturer: Microchip Technology. Win Source Part Number: 1271688-TP2540N8-G. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-243AA (SOT-89). Drive Voltage (Max Rds On, Min Rds On):... [See More]

• Package Type: SOT3; SOT89
• MOSFET Operating Mode: Enhancement

• Polarity: P-Channel; P-Channel
• V_(BR)DSS: 400

Manufacturer: Microchip Technology. Win Source Part Number: 1279485-VN2450N8-G. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-243AA (SOT-89). Drive Voltage (Max Rds On, Min Rds On):... [See More]

• Package Type: SOT3; SOT89
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 500

Manufacturer: Microchip Technology. Win Source Part Number: 1279494-VN3205N8-G. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-243AA (SOT-89). Drive Voltage (Max Rds On, Min Rds On):... [See More]

• Package Type: SOT3; SOT89
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 50

Manufacturer: Diodes Incorporated. Win Source Part Number: 1283460-ZXMN6A07ZTA. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: SOT-89-3. Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V. [See More]

• Package Type: SOT3; SOT89
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 60

Manufacturer: Rohm Semiconductor. Win Source Part Number: 100049-2SK2103T100. Packaging: Reel - TR. Mounting: SMD (SMT). Technology: MOSFET. Polarity: N-Channel. Power Dissipation (Max): 500mW (Ta). Categories: Discrete Semiconductor Products. Drive Voltage (Max Rds On, Min Rds On): 4V, 10V. Status:... [See More]

• Package Type: SOT3; SOT89; MPT3
• V_(BR)DSS: 30

• Polarity: N-Channel; N-Channel
• P_D: 500

Manufacturer: Rohm Semiconductor. Win Source Part Number: 005997-2SK3065T100. Packaging: Reel - TR. Mounting: SMD (SMT). Technology: MOSFET. Polarity: N-Channel. Power Dissipation (Max): 500mW (Ta). Categories: Discrete Semiconductor Products. Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V. [See More]

• Package Type: SOT3; SOT89; MPT3
• V_(BR)DSS: 60

• Polarity: N-Channel; N-Channel
• P_D: 500

Manufacturer: ON Semiconductor. Storage Condition: Dry storage cabinet & Humidity protection package. Win Source Part Number: 1037774-2SK3488-TD-E. Drain to Source Voltage (Vdss): 30 V. Power Dissipation: 3.5 W. Number of Pins: 3. Categories: Transistors - FETs, MOSFETs - RF. Alternative Parts... [See More]

• Package Type: SOT3; SOT89

• P_D: 3500

Manufacturer: NXP USA Inc. Win Source Part Number: 808418-AFT05MS004NT1. Packaging: Reel. Voltage - Rated: 30V. Frequency: 520MHz. Current - Test: 100mA. Gain: 20.9dB. Transistor Type: LDMOS. Voltage - Test: 7.5V. Power - Output: 4.9W. Supplier Device Package: SOT-89A. Manufacturer Package:... [See More]

• Package Type: SOT3; SOT89
• Packing Method: Tape Reel; Reel

• MOSFET Operating Mode: Enhancement

Manufacturer: Nexperia USA Inc. Win Source Part Number: 1024509-BSS192,115. Packaging: Reel - TR. Mounting: SMD (SMT). Technology: MOSFET. Polarity: P-Channel. Power Dissipation (Max): 560mW (Ta), 12.5W (Tc). Categories: Discrete Semiconductor Products. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: SOT3; SOT89; SOT-89-3
• V_(BR)DSS: 240

• Polarity: P-Channel; P-Channel
• P_D: 560 to 12500

Manufacturer: Infineon Technologies. Win Source Part Number: 127390-BSS192PH6327FTSA1. Packaging: Reel - TR. Mounting: SMD (SMT). Technology: MOSFET. Polarity: P-Channel. Power Dissipation (Max): 1W (Ta). Categories: Discrete Semiconductor Products. Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V. [See More]

• Package Type: SOT3; SOT89; PG-SOT89
• V_(BR)DSS: 250

• Polarity: P-Channel; P-Channel
• P_D: 1000

30V 6A 50m Ω@10V,7A 2.5W 2.5V@250uA P Channel SOT-89-3 MOSFETs ROHS [See More]

• Package Type: SOT89
• V_(BR)DSS: 30

• Polarity: P-Channel
• V_GS(off): 2.5

RF MOSFET LDMOS 7.5V SOT89A [See More]

• Package Type: SOT89; SOT-89A

• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Package Type: SOT89
• V_GS(off): -2.4

• Polarity: P-Channel
• r_DS(on): 3.5

RJP020N06FRA is the high reliability Automotive MOSFET. [See More]

• Package Type: SOT89; SOT-89
• V_(BR)DSS: 60

• Polarity: N-Channel
• I_DSS: 2000

SOT-89-3 MOSFETs ROHS [See More]

• Package Type: SOT89

RF MOSFET LDMOS 7.5V SOT89 [See More]

• Package Type: SOT89; SOT-89

• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Package Type: SOT89
• V_GS(off): -2

• Polarity: P-Channel
• r_DS(on): 12

60V 2.4A 1.25W 135m Ω@10V,2.4A 3V@250uA P Channel SOT-89-3 MOSFETs ROHS [See More]

• Package Type: SOT89
• V_(BR)DSS: 60

• Polarity: P-Channel
• V_GS(off): 3

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Package Type: SOT89
• V_GS(off): -2.4

• Polarity: P-Channel
• r_DS(on): 2

20V 2.3A 500mW 135m Ω@4.5V,2.3A 1.5V@250uA P Channel SOT-89-3 MOSFETs ROHS [See More]

• Package Type: SOT89
• V_(BR)DSS: 20

• Polarity: P-Channel
• V_GS(off): 1.5

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Package Type: SOT89
• V_GS(off): -2.4

• Polarity: P-Channel
• r_DS(on): 12

100V 3A 160m Ω@10V,3A 1.5W 2V@250uA N Channel SOT-89-3 MOSFETs ROHS [See More]

• Package Type: SOT89
• V_(BR)DSS: 100

• Polarity: N-Channel
• V_GS(off): 2

TP5322 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and... [See More]

• Package Type: SOT23; SOT89
• V_GS(off): -2.4

• Polarity: P-Channel
• r_DS(on): 12

200V 2A 520m Ω@10V,2A 1.5W 1.8V@250uA N Channel SOT-89-3 MOSFETs ROHS [See More]

• Package Type: SOT89
• V_(BR)DSS: 200

• Polarity: N-Channel
• V_GS(off): 1.8

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Package Type: SOT89
• V_GS(off): -2.4

• Polarity: P-Channel
• r_DS(on): 8

SOT-89-3 MOSFETs ROHS [See More]

• Package Type: SOT89

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Package Type: TO-92; SOT89
• V_GS(off): -3.5

• Polarity: P-Channel
• r_DS(on): 0.6000

100V 8A 130m Ω N Channel SOT-89-3L MOSFETs ROHS [See More]

• Package Type: SOT89
• V_(BR)DSS: 100

• Polarity: N-Channel
• r_DS(on): 0.1300

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Package Type: SOT89
• V_GS(off): -2.4

• Polarity: P-Channel
• r_DS(on): 15

30V 5A 1.8W 65m Ω@10V,5A 2V@250uA P Channel SOT-89-3 MOSFETs ROHS [See More]

• Package Type: SOT89
• V_(BR)DSS: 30

• Polarity: P-Channel
• V_GS(off): 2

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Package Type: TO-92; SOT89
• V_GS(off): -2.4

• Polarity: P-Channel
• r_DS(on): 25

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Package Type: TO-92; SOT89
• V_GS(off): -3.5

• Polarity: P-Channel
• r_DS(on): 30

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Package Type: SOT89
• V_GS(off): 2

• Polarity: N-Channel
• r_DS(on): 1.5

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Package Type: SOT89
• V_GS(off): 1

• Polarity: N-Channel
• r_DS(on): 2.5

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Package Type: SOT89
• V_GS(off): 2

• Polarity: N-Channel
• r_DS(on): 6

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Package Type: SOT89
• V_GS(off): 2.5

• Polarity: N-Channel
• r_DS(on): 3.5

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Package Type: TO-92; SOT23; SOT89
• V_GS(off): 2

• Polarity: N-Channel
• r_DS(on): 7

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Package Type: SOT89
• V_GS(off): 0.8000

• Polarity: N-Channel
• r_DS(on): 6

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Package Type: SOT23; SOT89
• V_GS(off): 2

• Polarity: N-Channel
• r_DS(on): 15

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

• Package Type: TO-92; SOT89
• V_GS(off): 2

• Polarity: N-Channel
• r_DS(on): 12

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

• Package Type: SOT89
• V_GS(off): 1.6

• Polarity: N-Channel
• r_DS(on): 1

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient... [See More]

• Package Type: TO-92; SOT89
• V_GS(off): 4

• Polarity: N-Channel
• r_DS(on): 13

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient... [See More]

• Package Type: TO-92; SOT89
• V_GS(off): 2.4

• Polarity: N-Channel
• r_DS(on): 0.3000

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient... [See More]

• Package Type: TO-92; SOT89
• V_GS(off): 4

• Polarity: N-Channel
• r_DS(on): 20