Tape Reel Metal-Oxide Semiconductor FET (MOSFET)

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

Buffer or Inverter Based IGBT/MOSFET Driver [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: SO-8; PG-DSO-8

Manufacturer: Texas Instruments. Win Source Part Number: 1317819-CSD88584Q5DCT. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Packaging: Reel - TR. Standard Package: 250. Mounting: Surface Mount. FET Type: 2 N-Channel (Half Bridge). FET Feature: Standard. Drain... [See More]

• Packing Method: Tape Reel; Reel - TR
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: SOT3; 22-PowerTFDFN

Infineon ’s 600V CoolMOS ™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

Buffer or Inverter Based IGBT/MOSFET Driver [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: SO-8; PG-DSO-8

Manufacturer: Renesas Electronics America Inc. Win Source Part Number: 1324111-UPA1815GR-9JG-E1-A. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Packaging: Reel - TR. Standard Package: 3,000. Mounting: Surface Mount. Technology: MOSFET (Metal Oxide). FET Type:... [See More]

• Packing Method: Tape Reel; Reel - TR
• Package Type: SOT3; 8-TSSOP (0.173", 4.40mm Width)

• Polarity: P-Channel

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

Buffer/Inverter Based MOSFET Driver [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: PG-DSO-16

Manufacturer: Nexperia USA Inc. Win Source Part Number: 1325294-PMFPB8032XP,115. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Packaging: Reel - TR. Standard Package: 3,000. Mounting: Surface Mount. Technology: MOSFET (Metal Oxide). FET Type: P-Channel. FET... [See More]

• Packing Method: Tape Reel; Reel - TR
• P_D: 485 to 6250

• Polarity: P-Channel
• T_J: -55 to 150

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

Buffer/Inverter Based MOSFET Driver [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: PG-TFLGA-13

Manufacturer: SANYO Semiconductor (U.S.A) Corporation. Win Source Part Number: 001297-FSS804-TL-E. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: 150 °C (TJ). Package: 8-SOIC... [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: 150

• Polarity: N-Channel
• Package Type: SOT3

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

Buffer/Inverter Based MOSFET Driver [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: PG-DSO-2

Manufacturer: Infineon Technologies. Win Source Part Number: 001943-IRF7807VD1TRPBF. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Series: FETKY. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: -55 °C ~ 150 °C (TJ). [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: SOT3

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPB65R041CFD7 in a D2PAK package is ideally suited for resonant topologies in industrial... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

Half Bridge Based IGBT/MOSFET Driver [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: PG-DSO-36

Manufacturer: SANYO Semiconductor (U.S.A) Corporation. Win Source Part Number: 003361-MCH5837-TL-E. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: 150 °C (TJ). Package: 6-SMD (5... [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: 150

• Polarity: N-Channel
• Package Type: SOT3

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

Buffer/Inverter Based MOSFET Driver, PDSO6 [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: PG-WSON-6

Manufacturer: Fairchild Semiconductor. Win Source Part Number: 003820-NDS331N_NL. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-236-3,... [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: SOT3; SOT23

500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

Small Signal Field-Effect Transistor, P-Channel, MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: TO-236

• Polarity: P-Channel

Manufacturer: Fairchild Semiconductor. Win Source Part Number: 003821-NDS332P_NL. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-236-3,... [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: -55 to 150

• Polarity: P-Channel
• Package Type: SOT3; SOT23

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

Half Bridge Based IGBT/MOSFET Driver [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: PG-DSO-14

Manufacturer: Fairchild Semiconductor. Win Source Part Number: 003822-NDS335N_NL. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-236-3,... [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: SOT3; SOT23

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

Half Bridge Based IGBT/MOSFET Driver [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: PG-DSO-14

Manufacturer: NXP. Win Source Part Number: 004377-PMBF170/G. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Series: TrenchMOS. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: -65 °C ~ 150 °C (TJ). Package: TO-236-3,... [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: -65 to 150

• Polarity: N-Channel
• Package Type: SOT3; SOT23

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

Half Bridge Based IGBT/MOSFET Driver [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: PG-DSO-14

Manufacturer: Torex-Semiconductor-Ltd. Win Source Part Number: 004783-XP152A11E5MRN. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: 150 °C (TJ). Package: TO-236-3, SC-59,... [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: 150

• Polarity: P-Channel
• Package Type: SOT3; SOT23

600V CoolMOS ™ PFD7 superjunction MOSFET in TO-252 DPAK package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPD60R1K0PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPD60R1K0PFD7S in a TO-252 DPAK package features RDS(on) of 1,000mOhm leading to low... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

Half Bridge Based MOSFET Driver [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: PG-VSON-1

Manufacturer: Infineon Technologies. Win Source Part Number: 007604-IPB80N03S4L-03. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Series: OptiMOS. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: -55 °C ~ 175 °C (TJ). [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: -55 to 175

• Polarity: N-Channel
• Package Type: TO-263; SOT3

600V CoolMOS ™ PFD7 superjunction MOSFET in TO-252 DPAK package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPD60R1K5PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPD60R1K5PFD7S in a TO-252 DPAK package features RDS(on) of 1,500mOhm leading to low... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

Half Bridge Based MOSFET Driver, PDSO16 [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: PG-DSO-16

Manufacturer: Infineon Technologies. Win Source Part Number: 012154-BSS131 H6327. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Series: SIPMOS. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: -55 °C ~ 150 °C (TJ). [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: SOT3; SOT23

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

2EDL8013 - Gate Driver N-Channel MOSFET 2 Driver Half-Bridge [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: PG-VDSON-8

• Polarity: N-Channel

Manufacturer: Infineon Technologies. Win Source Part Number: 012161-BSS670S2L H6327. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Series: OptiMOS. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: -55 °C ~ 150 °C (TJ). [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: SOT3; SOT23

Infineon ’s answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the new 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

Buffer/Inverter Based MOSFET Driver, 4A, PDSO8 [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: PG-TSSOP-8

Manufacturer: Infineon Technologies. Win Source Part Number: 012162-BSS806N H6327. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Series: OptiMOS. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: -55 °C ~ 150 °C (TJ). [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: SOT3; SOT23

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950 V CoolMOS ™ P7 series delivers... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

Gate Driver N-Channel MOSFET 2 Driver [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: PG-WSON-8

• Polarity: N-Channel

Manufacturer: SANYO Semiconductor (U.S.A) Corporation. Win Source Part Number: 015139-EC4407KF-TR. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: 150 °C (TJ). Package: 4-XFDFN. [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: 150

• Polarity: N-Channel
• Package Type: SOT3

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V, 7.5 Ohm [See More]

• Packing Method: Tape Reel; Tape & Reel
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Package Type: SOT23; SOT-23-3

Manufacturer: Infineon Technologies. Win Source Part Number: 015760-IRF3710STRLPBF. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Series: HEXFET. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: -55 °C ~ 175 °C (TJ). [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: -55 to 175

• Polarity: N-Channel
• Package Type: TO-263; SOT3

Double DPAK (D-DPAK) Innovative top-side cooled SMD solution for high power applications. Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

Small Signal Field-Effect Transistor, 0.1A, 50V, P-Channel, MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: TO-220; TO-220-3

• Polarity: P-Channel

Manufacturer: Infineon Technologies. Win Source Part Number: 017323-IPB80N08S2L-07. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Series: OptiMOS. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: -55 °C ~ 175 °C (TJ). [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: -55 to 175

• Polarity: N-Channel
• Package Type: TO-263; SOT3

The 600 V CoolMOS ™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

Power Field-Effect Transistor, 5A, 60V, P-Channel MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: DPAK-3

• Polarity: P-Channel

Manufacturer: Infineon Technologies. Win Source Part Number: 017446-IRF6215STRLPBF. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Series: HEXFET. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: -55 °C ~ 175 °C (TJ). [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: -55 to 175

• Polarity: P-Channel
• Package Type: TO-263; SOT3

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

Small Signal P-Channel MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: SOT323; SC-70 (SOT-323) 3

• Polarity: P-Channel

Manufacturer: Infineon Technologies. Win Source Part Number: 017470-IRF6635TRPBF. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Series: HEXFET. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: -40 °C ~ 150 °C (TJ). [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: -40 to 150

• Polarity: N-Channel
• Package Type: SOT3

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

P-Channel Silicon MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: PCP4

• Polarity: P-Channel

Manufacturer: Infineon Technologies. Win Source Part Number: 017507-IRF7329TRPBF. Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Arrays. Series: HEXFET. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: -55 °C ~ 150 °C (TJ). [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: -55 to 150

• Polarity: P-Channel
• Package Type: SOT3

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

N-Channel MOSFET High Speed Switching [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: SOT323; SC-70 (SOT-323)

• Polarity: N-Channel

Manufacturer: Toshiba Semiconductor and Storage. Win Source Part Number: 033535-TPCA8028-H(TE12LQM). Category: Discrete Semiconductor Products. Family: Transistors - FETs, MOSFETs - Single. Packaging: Reel(TR). Mounting Style: SMD/SMT. Operating Temperature Range: 150 °C (TJ). Package:... [See More]

• Packing Method: Tape Reel; Reel(TR)
• T_J: 150

• Polarity: N-Channel
• Package Type: SOT3

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: SC-88/SC70-6/SOT-363 6

• Polarity: N-Channel

Manufacturer: STMicroelectronics. Win Source Part Number: 038462-STL140N4LLF5. Category: Discrete Semiconductor Products. Family: FETs - Single. Series: STripFET V. Packaging: Reel. Mounting Style: SMD/SMT. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: 8-PowerVDFN. [See More]

• Packing Method: Tape Reel; Reel
• T_J: -55 to 150

• Polarity: N-Channel
• Package Type: SOT3

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPL65R065CFD7 in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

N-Channel Power MOSFET 250V, 0.4A [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: TO-92; TO-92-3

• Polarity: N-Channel

Manufacturer: Central Semiconductor Corp. Win Source Part Number: 038882-2N7002 TR. Category: Discrete Semiconductor Products. Family: FETs - Single. Packaging: Reel. Mounting Style: SMD/SMT. Operating Temperature Range: -65 °C ~ 150 °C (TJ). Package: TO-236-3 SC-59 SOT-23-3. Manufacturer... [See More]

• Packing Method: Tape Reel; Reel
• T_J: -65 to 150

• Polarity: N-Channel
• Package Type: SOT3; SOT23

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

Power Field-Effect Transistor, N-Channel MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: SOT-523

• Polarity: N-Channel

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

US6J12 is low on-resistance MOSFET, suitable for switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -12

• Polarity: P-Channel
• I_DSS: -2000

US6J12 is low on-resistance MOSFET, suitable for switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -12

• Polarity: P-Channel
• I_DSS: -2000

-20V, P ch NexFET MOSFET ™, single SON 2x2, 23.9mOhm 6-WSON -55 to 150 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 20

Trans MOSFET N-CH 55V 150A 3-Pin(3+Tab) TO-220AB T/R [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 55

• Polarity: N-Channel
• I_DSS: 150000

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

-20V Pch+Pch Small Signal MOSFET [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -20

• Polarity: P-Channel
• I_DSS: -1500

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 50

• Polarity: N-Channel
• I_DSS: 200

0.22A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC -40 to 85 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

• T_J: -40 to 125

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 50

• Polarity: N-Channel
• I_DSS: 200

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 50

• Polarity: N-Channel
• I_DSS: 200

10V DRIVE NCH MOSFET (AEC-Q101 Q [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 60

N190V,5A,RD <540M@10V,VTH1.0V~3.0 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• I_DSS: 5000

• V_(BR)DSS: 190
• Package Type: SOT23; SOT-23-6

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 50

• Polarity: N-Channel
• I_DSS: 200

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 50

• Polarity: N-Channel
• I_DSS: 200

2.5V DRIVE NCH+PCH MOSFET, 6 PIN [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

• T_J: 150

MOSFET N-CH 60V 300MA TO92-3 [See More]

• Packing Method: Tape Reel; Tape & Box (TB)
• I_DSS: 300

• V_(BR)DSS: 60
• Package Type: TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 50

• Polarity: N-Channel
• I_DSS: 200

ROHM recommends RE1J002YN as standard spec. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 50

• Polarity: N-Channel
• I_DSS: 200

30V N CH MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• P_D: 500

MOSFET N-CH 60V 200MA TO92 [See More]

• Packing Method: Tape Reel; Tape & Box (TB)
• I_DSS: 0.2200

• V_(BR)DSS: 60
• Package Type: TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 175

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 50

• Polarity: N-Channel
• I_DSS: 200

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 50

• Polarity: N-Channel
• I_DSS: 200

30V NCH NCH MID POWER MOSFET [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 30

N-CHANNEL MOSFET SOT-23 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
• I_DSS: 115

• V_(BR)DSS: 60
• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 50

• Polarity: N-Channel
• I_DSS: 200

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 50

• Polarity: N-Channel
• I_DSS: 200

30V NCH+NCH POWER MOSFET [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 30

MOSFET 2N-CH 60V 0.3A 6TSSOP [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• I_DSS: 0.3000

• V_(BR)DSS: 60

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 50

• Polarity: N-Channel
• I_DSS: 200

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 5000

40V N CH MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 40

MOSFET 2N-CH 60V 0.34A SOT563 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
• I_DSS: 340

• V_(BR)DSS: 60

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

The Ultra Small Package(0806size). [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 150

The Ultra Small Package(0806size). [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 150

4V DRIVE NCH MOSFET. MOSFETS ARE [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• T_J: 150

• P_D: 1400

SOT-323, MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
• I_DSS: 0.2500

• V_(BR)DSS: 60
• Package Type: SOT323; SC-70, SOT-323

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

The ultra-small package(1006size) RV2C002UN is suitable for portable devices. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 180

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 50

• Polarity: N-Channel
• I_DSS: 200

4V DRIVE NCH+NCH MOSFET [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 30

MOSFET N-CH 60V 300MA SOT23-3 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• I_DSS: 0.3000

• V_(BR)DSS: 60
• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 6500

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 100

60V N CH MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Polarity: N-Channel; N-CHANNEL
• r_DS(on): 0.0081

MOSFET N-CH 60V 115MA SOT23-3 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• I_DSS: 115

• V_(BR)DSS: 60
• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 2000

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 4000

Automotive N-Channel 40 V (D-S) 175 °C MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• P_D: 71000

• Polarity: N-Channel
• T_J: -55 to 175

MOSFET N-CH 60V 300MA DFN1006-3 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• I_DSS: 0.3000

• V_(BR)DSS: 60
• Package Type: 3-XFDFN

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 2000

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 6500

Automotive N-Channel 60 V (D-S) 175 °C MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• r_DS(on): 0.0300

• Polarity: N-Channel
• P_D: 39000

MOSFET N-CH 60V 300MA TO236AB [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• I_DSS: 0.3000

• V_(BR)DSS: 60
• Package Type: SOT23; TO-236-3, SC-59, SOT-23-3

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 2500

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 2000

Automotive P-Channel 30 V (D-S) 175 °C MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• V_(BR)DSS: -30

• Polarity: P-Channel
• r_DS(on): 0.0300

MOSFET N-CH 60V SOT523 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays [See More]

• Packing Method: Tape Reel; Surface Mount

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 60

• Polarity: N-Channel
• I_DSS: 40000

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 1500

Automotive P-Channel 60 V (D-S) 175 °C MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• P_D: 46000

• Polarity: P-Channel

MOSFET N-CH 60V 0.115A SOT323 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
• I_DSS: 0.1150

• V_(BR)DSS: 60
• Package Type: SOT323; SC-70, SOT-323

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 500

• Polarity: N-Channel
• I_DSS: 500

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 2500

BSS192 Series 240 V 560 mW 5 nC Silicon P-Channel Surface Mount MOSFET - SOT-89 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

• Polarity: P-Channel

MOSFET P-CH 60V 5A PW-MOLD [See More]

• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
• I_DSS: 5000

• V_(BR)DSS: 60
• Package Type: TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 300

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 2500

BUK9K35-60E - Dual N-channel 60 V, 35 mO logic level MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

RF MOSFET 10V PW-MINI [See More]

• Packing Method: Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR

• Package Type: TO-243AA

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 1500

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 60

• Polarity: N-Channel
• I_DSS: 40000

DIODES INC. DMP3025LK3-13 MOSFET Transistor, P Channel, 16.1 A, -30 V, 25 mohm, -10 V, -1 V [See More]

• Packing Method: Tape Reel; Digi-Reel®
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• r_DS(on): 0.0250

MOSFET N-CH 40V 80A TO220AB [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• I_DSS: 80000

• V_(BR)DSS: 40
• Package Type: 2800 pF @ 10 V

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 7000

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 6000

DRIVER, MOSFET, DUAL OR, 2A, CMOS, 8MLP [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)

• T_J: -40 to 125

MOSFET N-CH 60V 40A TO263-2 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• I_DSS: 40000

• V_(BR)DSS: 60
• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 18000

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 500

• Polarity: N-Channel
• I_DSS: 500

Dual Common Drain P-Channel PowerTrench ® MOSFET -20V, -7A, 36mO [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Transistor Technology / Material: SILICON

• Polarity: P-Channel
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

MOSFET N-CH 75V 100A TO263-2 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Package Type: TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

• V_(BR)DSS: 75

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 35000

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 500

DUAL N CH RF MOSFET, 12V, 30MA, 4-SOT-143R - More Details [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• MOSFET Operating Mode: Depletion; DUAL GATE, DEPLETION MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 12

MOSFET N-CH 250V 1A TO92MOD [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• I_DSS: 1000

• V_(BR)DSS: 250
• Package Type: TO-92; TO-226-3, TO-92-3 Long Body

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 60

• Polarity: N-Channel
• I_DSS: 300

RJP020N06FRA is the high reliability Automotive MOSFET. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 60

• Polarity: N-Channel
• I_DSS: 2000

Dual N-Channel 30 V 0.024 Ohm Surface Mount Enhancement Mode MOSFET - SOP-8 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

MOSFET N-CH 150V 1A TO92 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• I_DSS: 1000

• V_(BR)DSS: 150
• Package Type: TO-92; TO-226-3, TO-92-3 (TO-226AA)

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 60

• Polarity: N-Channel
• I_DSS: 2000

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 60

• Polarity: N-Channel
• I_DSS: 200

Dual N-Channel 30 V 2.2 Ohm 450 mW Silicon Surface Mount Mosfet - SOT-563 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• MOSFET Operating Mode: Enhancement; ENHANCEMENT MODE

MOSFET P-CH 30V 100MA 3SSFP [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Package Type: SC-81

• V_(BR)DSS: 30

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

The ultra-small package RV3C002UN is suitable for portable devices. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 150

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 1500

FAIRCHILD SEMICONDUCTOR FAN3121TMX DRIVER, MOSFET, LS, 9A, INV, TTL, 8SOIC [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• T_J: -55 to 150

• P_D: 396

MOSFET N-CH 60V 300MA DFN1006-3 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• I_DSS: 0.3000

• V_(BR)DSS: 60
• Package Type: SC-101, SOT-883

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single [See More]

• Packing Method: Tape Reel; Surface Mount

• T_J: -55 to 150

The small package(1006size) RV2C014BC is suitable for portable devices. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -20

• Polarity: P-Channel
• I_DSS: -1400

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 7000

FAIRCHILD SEMICONDUCTOR FDPC8013SDual MOSFET, Dual N Channel, 55 A, 30 V, 0.0014 ohm, 10 V, 1.7 V [See More]

• Packing Method: Tape Reel; Digi-Reel®
• P_D: 2000

• V_(BR)DSS: 30
• T_J: -55 to 150

MOSFET N-CH 60V 300MA SOT323 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• I_DSS: 0.3000

• V_(BR)DSS: 60
• Package Type: SOT323; SC-70, SOT-323