TO-247 Metal-Oxide Semiconductor FET (MOSFET)

MOSFET N-Channel 1KV 13A SuperMESH TO247 [See More]

• Package Type: TO-247; To-247
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Power MOS V ® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V ® also achieves faster switching speeds through optimized gate layout. [See More]

• Package Type: TO-247; TO-247

• r_DS(on): 1

MOSFET, N-Ch, Single, 200.00A, 100V, TO-247 [See More]

• Package Type: TO-247; TO-247
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 200000

Win Source Part Number: 1017915-ARF446G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Bulk. Standard Package: 1. Voltage - Rated: 900 V. Frequency: 40.68MHz. Gain: 15dB. Transistor Type: N-Channel. Voltage - Test: 250 V. Power - Output: 140W. Package /... [See More]

• Package Type: TO-247; SOT3

• Polarity: N-Channel

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

FCH060N80 - N-Channel SuperFETII MOSFET [See More]

• Package Type: TO-247; TO-247
• Packing Method: Tube; Tube

• Polarity: N-Channel

MOSFET N-Channel 800V 11A TO247 [See More]

• Package Type: TO-247; To-247
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Super Junction MOSFET [See More]

• Package Type: TO-247; TO-247

• r_DS(on): 0.1000

Win Source Part Number: 1208971-ARF447G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Bulk. Standard Package: 1. Voltage - Rated: 900 V. Frequency: 40.68MHz. Gain: 15dB. Transistor Type: N-Channel. Voltage - Test: 250 V. Power - Output: 140W. Package /... [See More]

• Package Type: TO-247; SOT3

• Polarity: N-Channel

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

HEXFET Power MOSFET [See More]

• Package Type: TO-247; TO-247

• Packing Method: Tube; Tube

MOSFET N-Channel 600V 20A TO247 [See More]

• Package Type: TO-247; To-247
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC060SMA070B device is a 700 V, 60 mOhm SiC MOSFET in a TO-247 package. Features. [See More]

• Package Type: TO-247; TO-247-3L

• r_DS(on): 0.0600

Win Source Part Number: 1353438-MRF300BN. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs. Fake Threat In the Open Market: 42 pct. MSL Level: Not Applicable. Mfr: NXP USA Inc. Package: Tube. Product Status: Active. Frequency: 27MHz ~ 250MHz. Package / Case:... [See More]

• Package Type: TO-247; SOT3

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

NVHL160N - Silicon Carbide MOSFET, N Channel, 1200 V, 160 m [See More]

• Package Type: TO-247; TO-247

• Packing Method: Tube; Tube

MOSFET N-Channel 500V 21A TO247 [See More]

• Package Type: TO-247; To-247
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1382953-MRF300AN. Category: Discrete Semiconductor Products >Transistors >FETs, MOSFETs >RF FETs, MOSFETs. Package: Tube. Standard Package: 30 pcs. Technology: LDMOS. Frequency: 27MHz ~ 250MHz. Gain: 28dB. Voltage - Test: 50 V. Power - Output: 300W. Mounting Type:... [See More]

• Package Type: TO-247; SOT3

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET N-Channel 900V 11A TO247 [See More]

• Package Type: TO-247; To-247
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1004388-AOK160A60. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: aMOS5 ™. Package: Tube. Standard Package: 240. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current -... [See More]

• Package Type: TO-247; SOT3
• P_D: 250000

• Polarity: N-Channel
• T_J: -55 to 150

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET N-Channel 600V 20A TO247 [See More]

• Package Type: TO-247; To-247
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1005480-STW33N60M6. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: MDmesh ™ M6. Package: Tube. Standard Package: 600. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current -... [See More]

• Package Type: TO-247; SOT3

• Polarity: N-Channel

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPW65R018CFD7 in TO-247 package is ideally suited for resonant topologies in... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET N-Channel 1.5KV 8A TO247 [See More]

• Package Type: TO-247; To-247
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1007989-FCH110N65F-F155. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: FRFET ®, SuperFET ® II. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Package Type: TO-247; SOT3
• P_D: 357000

• Polarity: N-Channel
• T_J: -55 to 150

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET NChannel 650V 20.2A CoolMOS TO247 [See More]

• Package Type: TO-247; To-247
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1011110-SIHG22N60EF-GE3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: EF. Package: Tube. Standard Package: 25. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current - Continuous... [See More]

• Package Type: TO-247; SOT3
• P_D: 179000

• Polarity: N-Channel
• T_J: -55 to 150

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET N-ch 600V 40A MDmesh DM2 TO-247 [See More]

• Package Type: TO-247; To-247
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1012660-STW45N60DM2AG. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101, MDmesh ™ DM2. Package: Tube. Standard Package: 30. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage... [See More]

• Package Type: TO-247; SOT3
• P_D: 250000

• Polarity: N-Channel
• T_J: -55 to 150

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET N-ch 600V 66A MDmesh DM2 TO-247 [See More]

• Package Type: TO-247; To-247
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1016203-APT6038BFLLG. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: POWER MOS 7 ®. Package: Tube. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current -... [See More]

• Package Type: TO-247; SOT3

• Polarity: N-Channel

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET N-Ch 550V 19A E Series TO-247AC [See More]

• Package Type: TO-247; To-247ac
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1017649-NTH027N65S3F-F155. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: FRFET ®, SuperFET ® II. Package: Tube. Standard Package: 30. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Package Type: TO-247; SOT3
• P_D: 595000

• Polarity: N-Channel
• T_J: -55 to 150

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3 to 4

MOSFET N-Ch 600V 76A SuperFET II TO247 [See More]

• Package Type: TO-247; To-247
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1018480-RFG45N06. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 60 V. Current - Continuous Drain (Id) @ 25 °C:... [See More]

• Package Type: TO-247; SOT3
• P_D: 131000

• Polarity: N-Channel
• T_J: -55 to 175

650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode. in TO-247 4-pin package. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPZA65R029CFD7 in TO-247 4-pin package is ideally suited for resonant topologies in industrial applications, such as server,... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

HEXFET N-Ch MOSFET 50A 200V TO-247AC [See More]

• Package Type: TO-247; To-247ac
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1018795-FCH099N65S3-F155. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 450. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. [See More]

• Package Type: TO-247; SOT3
• P_D: 227000

• Polarity: N-Channel
• T_J: -55 to 150

Summary of Features. Worldwide best RDS(on) in TO-247 package. Ultra low gate charge. Extreme dv/dt rated. High peak current capability. Automotive AEC Q101 qualified. Green package (RoHS compliant). Potential Applications. Infineon's CoolMOS ™ CPA SJ MOSFET is designed for DC-DC converters... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

MOSFET N-Channel 700V 75A CoolMOS TO247 [See More]

• Package Type: TO-247; To-247
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1018876-IRF300P226. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: StrongIRFET ™. Package: Tube. Standard Package: 25. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 300 V. Current -... [See More]

• Package Type: TO-247; SOT3
• P_D: 556000

• Polarity: N-Channel
• T_J: -55 to 175

650V CoolMOS ™ N-channel automotive SJ power MOSFET CFD7A. The 35mOhm IPW65R035CFD7A in TO-247 package is part of the automotive-qualified 650V CoolMOS ™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS ™ CFD7A offers higher reliability and... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.5 to 4.5

MOSFET N-Ch 650V 43.3A CoolMOS TO247 [See More]

• Package Type: TO-247; To-247
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1020211-IXFH6N100F. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: HiPerFET ™, F Class. Package: Tube. Standard Package: 30. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 1000 V. [See More]

• Package Type: TO-247; SOT3
• P_D: 180000

• Polarity: N-Channel
• T_J: -55 to 150

Radiation tolerant, 60V, 106A, N-channel MOSFET, PG-TO247, 30krad(Si) TID. Summary of Features. Optimized for LEO missions and constellations. Radiation tolerant (LET of 46 MeV ∙cm ²/mg). Qualified according to AEC-Q101 standard. Potential Applications. Ideally suited for all power... [See More]

• Package Type: TO-247; PG-TO247-3
• V_GS(off): 2 to 4

• Polarity: N-Channel; N
• r_DS(on): 0.0150

MOSFET N-Channel 60V 160A HEXFET TO247AC [See More]

• Package Type: TO-247; To-247ac
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1022082-FCH041N65EFLN4. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: FRFET ®, SuperFET ® II. Package: Tube. Standard Package: 450. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Package Type: TO-247; SOT3
• P_D: 595000

• Polarity: N-Channel
• T_J: -55 to 150

100V Single N-Channel StrongIRFET ™ Power MOSFET in a TO-247 Package. Benefits. Improved Gate, Avalanche and Dynamic dv/dt Ruggedness. Fully Characterized Capacitance and Avalanche SOA. Enhanced body diode dv/dt and di/dt Capability. Lead-Free; RoHS Compliant; Halogen-Free. Potential... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 20

MOSFET N-Channel 60V 200A HEXFET TO247AC [See More]

• Package Type: TO-247; To-247ac
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1023919-AOK42S60L. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: aMOS ™. Package: Tube. Standard Package: 240. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current -... [See More]

• Package Type: TO-247; SOT3
• P_D: 417000

• Polarity: N-Channel
• T_J: -55 to 150

IPW60R016CM8 600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.7 to 4.7

MOSFET N-Ch 100V 180A HEXFET TO247AC [See More]

• Package Type: TO-247; To-247ac
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1025014-STW12NM60N. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: MDmesh ™. Package: Tube. Standard Package: 600. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current -... [See More]

• Package Type: TO-247; SOT3
• P_D: 90000

• Polarity: N-Channel
• T_J: -55 to 150

600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0240

MOSFET N-Channel 150V 78A HEXFET TO247AC [See More]

• Package Type: TO-247; To-247ac
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1030444-FCH060N80-F155. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® II. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. FET Feature: Super Junction. Drain to Source... [See More]

• Package Type: TO-247; SOT3
• P_D: 500000

• Polarity: N-Channel
• T_J: -55 to 150

600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0550

MOSFET N-Ch 150V 171A HEXFET TO247AC [See More]

• Package Type: TO-247; To-247ac
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1031067-FCH085N80-F155. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® II. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. FET Feature: Super Junction. Drain to Source... [See More]

• Package Type: TO-247; SOT3
• P_D: 446000

• Polarity: N-Channel
• T_J: -55 to 150

IPZA60R016CM8 600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss)... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 3.7 to 4.7

MOSFET N-Channel 250V 93A HEXFET TO247AC [See More]

• Package Type: TO-247; To-247ac
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1031510-APT1201R6BVFRG. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: POWER MOS V ®. Package: Tube. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 1200 V. Current -... [See More]

• Package Type: TO-247; SOT3

• Polarity: N-Channel

600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0240

MOSFET N-Ch 200V 130A HEXFET TO247AC [See More]

• Package Type: TO-247; To-247ac
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1036416-STW42N60M2-EP. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: MDmesh ™ M2-EP. Package: Tube. Standard Package: 30. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current... [See More]

• Package Type: TO-247; SOT3
• P_D: 250000

• Polarity: N-Channel
• T_J: 150

600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0550

StrongIRFET MOSFET N-Ch 40V 195A TO247AC [See More]

• Package Type: TO-247; To-247ac
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1045817-APT5015BVRG. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: POWER MOS V ®. Package: Tube. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 500 V. Current -... [See More]

• Package Type: TO-247; SOT3

• Polarity: N-Channel

650 V CoolMOS ™ 8 power transistor. The 650 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS ™ 7 MOSFET family including C7 and CFD7. It comes with better efficiency compare to its predeccesor. 650 V CoolMOS ™ 8 offers the additional 50 V buffer to... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0180

MOSFET,N-channel,600V,20A,TO247 [See More]

• Package Type: TO-247; To-247
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1060390-SIHG80N60EF-GE3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: EF. Package: Tube. Standard Package: 25. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current - Continuous... [See More]

• Package Type: TO-247; SOT3
• P_D: 520000

• Polarity: N-Channel
• T_J: -55 to 150

950 V CoolMOS ™ PFD7 superjunction MOSFET in TO-247 package. The 950 V CoolMOS ™ PFD7 superjunction MOSFET (IPW95R060PFD7) complements the CoolMOS ™ 7 offering for high power lighting and industrial SMPS applications. The IPW95R060PFD7 in the TO-247 package features RDS(on) of 60 m... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• V_GS(off): 2.5 to 3.5

SiC MOSFET N-Channel 1000V 35A TO-247-4 [See More]

• Package Type: TO-247; To-247
• MOSFET Operating Mode: Enhancement

• Polarity: N-Channel
• Number of units in IC: 1

Win Source Part Number: 1062946-NVHL027N65S3F. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101, SuperFET ® III, FRFET ®. Package: Tube. Standard Package: 30. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to... [See More]

• Package Type: TO-247; SOT3
• P_D: 595000

• Polarity: N-Channel
• T_J: -55 to 150

650 V CoolMOS ™ 8 power transistor. The 650 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS ™ 7 MOSFET family including C7 and CFD7. It comes with better efficiency compare to its predeccesor. 650 V CoolMOS ™ 8 offers the additional 50 V buffer to... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0180

FET RF N-CH 500V 14A TO247 [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: MOSFET

• Polarity: N-Channel; N-Channel

MOSFET N-CH 300V 46A TO247AC [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 46000

• V_(BR)DSS: 300
• Packing Method: Tube; Tube

R6020ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance . [See More]

• Package Type: TO-247; TO-247
• V_(BR)DSS: 600

• Polarity: N-Channel
• I_DSS: 20000

SICFET N-CH 700V 110A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 110000

• V_(BR)DSS: 700
• Packing Method: Bulk; Bulk

TO-247 MOSFETs ROHS [See More]

• Package Type: TO-247

RF MOSFET LDMOS 50V TO247 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Technology / Material: LDMOS

SICFET N-CH 1200V 52A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 52000

• V_(BR)DSS: 1200
• Packing Method: Tube; Tube

75M 1200V 175C SIC FET [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 32000

• V_(BR)DSS: 1200
• Packing Method: Tube; Tube

650V 54A 172W 60m Ω 4V TO-247 MOSFETs ROHS [See More]

• Package Type: TO-247
• V_GS(off): 4

• V_(BR)DSS: 650
• r_DS(on): 0.0600

1200V COOLSIC MOSFET PG-TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: SiCFET (Silicon Carbide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 1200

MOSFET N-CH 600V 24A TO247 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 24000

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

75M 1200V 175C SIC FET [See More]

• Package Type: TO-247; TO-247-4
• I_DSS: 32000

• V_(BR)DSS: 1200
• Packing Method: Tube; Tube

700V 47A 95m Ω 391W 4V TO-247-3L MOSFETs ROHS [See More]

• Package Type: TO-247
• V_GS(off): 4

• V_(BR)DSS: 700
• r_DS(on): 0.0950

MOSFET N-CH 600V 53A TO247 [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 600

MOSFET N-CH 500V 58A T-MAX [See More]

• Package Type: TO-247; TO-247-3 Variant
• I_DSS: 58000

• V_(BR)DSS: 500
• Packing Method: Tube; Tube

SIC MOSFET N-CH 4A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 5000

• V_(BR)DSS: 1700
• Packing Method: Tube; Tube

700V 30A 277.8W 110m Ω 3.5V TO-247-3L MOSFETs ROHS [See More]

• Package Type: TO-247
• V_GS(off): 3.5

• V_(BR)DSS: 700
• r_DS(on): 0.1100

MOSFET N-CH 1000V 11A TO247 [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 1000

MOSFET N-CH 1000V 8A TO247 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 8000

• V_(BR)DSS: 1000
• Packing Method: Tube; Tube

3300V 50M TO-247-4 SIC MOSFET [See More]

• Package Type: TO-247; TO-247-4
• I_DSS: 63000

• V_(BR)DSS: 3300
• Packing Method: Tube; Tube

85V 160A 340W 3.3m Ω 3V TO-247-3L MOSFETs ROHS [See More]

• Package Type: TO-247
• V_GS(off): 3

• V_(BR)DSS: 85
• r_DS(on): 0.0033

MOSFET N-CH 600V 106A T-MAX [See More]

• Package Type: TO-247; TO-247-3 Variant
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 600

MOSFET N-CH 1200V 12A TO247 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 12000

• V_(BR)DSS: 1200
• Packing Method: Tube; Tube

SIC MOSFET N-CH 128A TO247-4 [See More]

• Package Type: TO-247; TO-247-4
• I_DSS: 128000

• V_(BR)DSS: 1200
• Packing Method: Tube; Tube

650V 120A 416W 21m Ω@55.8A,15V 3.6V@15.5mA null TO-247-4 MOSFETs ROHS [See More]

• Package Type: TO-247
• V_GS(off): 3.6

• V_(BR)DSS: 650
• r_DS(on): 0.0210

MOSFET N-CH 500V 28A TO247AD [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 500

MOSFET N-CH 1200V 14A TO247 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 14000

• V_(BR)DSS: 1200
• Packing Method: Tube; Tube

750V 60M TO-247-4 G3R SIC MOSFET [See More]

• Package Type: TO-247; TO-247-4
• Packing Method: Tube; Tube

• V_(BR)DSS: 750

1.2kV 30A 113.6W 90m Ω@20A,15V 4V@5mA null TO-247-3 MOSFETs ROHS [See More]

• Package Type: TO-247
• V_GS(off): 4

• V_(BR)DSS: 1200
• r_DS(on): 0.0900

N-CHANNEL SILICON CARBIDE POWER [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: SiCFET (Silicon Carbide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 1200

RF MOSFET 150V TO247 [See More]

• Package Type: TO-247; TO-247-3

• Packing Method: Tube; Tube

TRANS SJT 1700V 16A TO247AB [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 16000

• V_(BR)DSS: 1700
• Packing Method: Tube; Tube

650V 47A 70m Ω TO-247-3 MOSFETs ROHS [See More]

• Package Type: TO-247
• r_DS(on): 0.0700

• V_(BR)DSS: 650

MOSFET N-CH 150V 171A TO247AC [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 150

RF MOSFET 125V TO247CS [See More]

• Package Type: TO-247; TO-247CS

• Packing Method: Tube; Tube

GAN041-650WSB/SOT429/TO-247 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 47200

• V_(BR)DSS: 650
• Packing Method: Tube; Tube

1.2kV 60A 40m Ω TO-247-4L MOSFETs ROHS [See More]

• Package Type: TO-247
• r_DS(on): 0.0400

• V_(BR)DSS: 1200

SICFET N-CH 1200V 90A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: SiCFET (Silicon Carbide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 1200

SICFET N-CH 1200V 90A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 90000

• V_(BR)DSS: 1200
• Packing Method: Tube; Tube

SIC MOSFET 1200V 80M TO-247-3L [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 35000

• V_(BR)DSS: 1200
• Packing Method: Tube; Tube

TO-247AC-3 MOSFETs ROHS [See More]

• Package Type: TO-247

SICFET N-CH 1700V 72A TO247-4 [See More]

• Package Type: TO-247; TO-247-4
• Transistor Technology / Material: SiCFET (Silicon Carbide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 1700

SICFET N-CH 1700V 72A TO247-4 [See More]

• Package Type: TO-247; TO-247-4
• I_DSS: 72000

• V_(BR)DSS: 1700
• Packing Method: Tube; Tube

SIC DISCRETE [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 225000

• V_(BR)DSS: 1200
• Packing Method: Tube; Tube

650V 34A 450W 34m Ω@10V,25A 4V null TO-247 MOSFETs ROHS [See More]

• Package Type: TO-247
• V_GS(off): 4

• V_(BR)DSS: 650
• r_DS(on): 0.0340

SICFET N-CH 1700V 40A TO247-4 [See More]

• Package Type: TO-247; TO-247-4
• Transistor Technology / Material: SiCFET (Silicon Carbide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 1700

SICFET N-CH 1700V 40A TO247-4 [See More]

• Package Type: TO-247; TO-247-4
• I_DSS: 40000

• V_(BR)DSS: 1700
• Packing Method: Tube; Tube

SIC DISCRETE [See More]

• Package Type: TO-247; TO-247-4
• I_DSS: 123000

• V_(BR)DSS: 2000
• Packing Method: Tube; Tube

1.2kV 60A 40m Ω 330W N Channel TO-247-3 MOSFETs ROHS [See More]

• Package Type: TO-247
• V_(BR)DSS: 1200

• Polarity: N-Channel
• r_DS(on): 0.0400

SICFET N-CH 650V 120A TO247-4L [See More]

• Package Type: TO-247; TO-247-4
• Transistor Technology / Material: SiCFET (Silicon Carbide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 650

SICFET N-CH 650V 120A TO247-4L [See More]

• Package Type: TO-247; TO-247-4
• I_DSS: 120000

• V_(BR)DSS: 650
• Packing Method: Tube; Tube

SIC DISCRETE [See More]

• Package Type: TO-247; TO-247-4
• I_DSS: 48000

• V_(BR)DSS: 2000
• Packing Method: Tube; Tube

100V 75A 8m Ω@75A,10V 515W 4V@250uA null TO-247-3 MOSFETs ROHS [See More]

• Package Type: TO-247
• V_GS(off): 4

• V_(BR)DSS: 100
• r_DS(on): 0.0080

MOSFET N-CH 650V 75A TO247 [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 650

SICFET N-CH 1200V 24A TO247 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 24000

• V_(BR)DSS: 1200
• Packing Method: Tube; Tube

SIC DISCRETE [See More]

• Package Type: TO-247; TO-247-4
• I_DSS: 127000

• V_(BR)DSS: 1200
• Packing Method: Tube; Tube

200V 90A 375W 25m Ω@10V,40A 4V@250uA N Channel TO-247A-3L MOSFETs ROHS [See More]

• Package Type: TO-247
• V_(BR)DSS: 200

• Polarity: N-Channel
• V_GS(off): 4

POWER FIELD-EFFECT TRANSISTOR [See More]

• Package Type: TO-247; TO-247-4
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 650

SICFET N-CH 900V 35A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 35000

• V_(BR)DSS: 900
• Packing Method: Tube; Tube

650V COOLMOS CFD7A SJ POWER DEVI [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 11000

• V_(BR)DSS: 650
• Packing Method: Tube; Tube

150V 130A 11.5m Ω@10V,40A 349W 4V@250uA N Channel TO-247A-3L MOSFETs ROHS [See More]

• Package Type: TO-247
• V_(BR)DSS: 150

• Polarity: N-Channel
• V_GS(off): 4

MOSFET N-CH 600V 77A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 600

MOSFET N-CH 650V 75A TO247 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 75000

• V_(BR)DSS: 650
• Packing Method: Tube; Tube

TRENCH >=100V PG-TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 180000

• V_(BR)DSS: 100
• Packing Method: Tube; Tube

80V 200A 397W 3.5m Ω@10V,100A 4V@250uA N Channel TO-247A-3L MOSFETs ROHS [See More]

• Package Type: TO-247
• V_(BR)DSS: 80

• Polarity: N-Channel
• V_GS(off): 4

MOSFET N-CH 650V 19A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 650

MOSFET N-CH 650V 75A TO247 [See More]

• Package Type: TO-247; TO-247-4
• I_DSS: 75000

• V_(BR)DSS: 650
• Packing Method: Tube; Tube

MOSFET N-CH 500V 20A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 20000

• V_(BR)DSS: 500
• Packing Method: Tube; Tube

80V 320A 2m Ω@10V,160A 416W 4V@250uA N Channel TO-247A-3L MOSFETs ROHS [See More]

• Package Type: TO-247
• V_(BR)DSS: 80

• Polarity: N-Channel
• V_GS(off): 4

POWER FIELD-EFFECT TRANSISTOR, 4 [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 600

MOSFET N-CH 600V 77A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 77000

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

TRENCH >=100V [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 93000

• V_(BR)DSS: 250
• Packing Method: Tube; Tube

80V 360A 1.5m Ω@10V,180A 500W 3V@250uA N Channel TO-247A-3L MOSFETs ROHS [See More]

• Package Type: TO-247
• V_(BR)DSS: 80

• Polarity: N-Channel
• V_GS(off): 3

3300V 50M TO-247-4 SIC MOSFET [See More]

• Package Type: TO-247; TO-247-4
• Transistor Technology / Material: SiCFET (Silicon Carbide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 3300

MOSFET N-CH 650V 76A TO247-4 [See More]

• Package Type: TO-247; TO-247-4

• Packing Method: Tube; Tube

SIC MOSFET, 1200V 50MOHM, TO-247 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 58000

• V_(BR)DSS: 1200
• Packing Method: Tube; Tube

TO-247-3 MOSFETs ROHS [See More]

• Package Type: TO-247

SIC MOSFET N-CH 22A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: SiCFET (Silicon Carbide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 1200

MOSFET N-CH 650V 24A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 24000

• V_(BR)DSS: 650
• Packing Method: Tube; Tube

SIC MOSFET, 1200V 50MOHM, TO-247 [See More]

• Package Type: TO-247; TO-247-4
• I_DSS: 58000

• V_(BR)DSS: 1200
• Packing Method: Tube; Tube

650V 54A 37m Ω@10V,32.6A 245W 4.5V@1.63mA N Channel TO-247-3 MOSFETs ROHS [See More]

• Package Type: TO-247
• V_(BR)DSS: 650

• Polarity: N-Channel
• V_GS(off): 4.5

SIC MOSFET N-CH 128A TO247-4 [See More]

• Package Type: TO-247; TO-247-4
• Transistor Technology / Material: SiCFET (Silicon Carbide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 1200

MOSFET N-CH 600V 35A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 35000

• V_(BR)DSS: 600
• Packing Method: Bulk; Bulk

MOSFET 34A 650V X3 TO247 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 34000

• V_(BR)DSS: 650
• Packing Method: Tube; Tube

600V 48A 164W 60m Ω@10V,15.9A 4V@800uA N Channel TO-247-3 MOSFETs ROHS [See More]

• Package Type: TO-247
• V_(BR)DSS: 600

• Polarity: N-Channel
• V_GS(off): 4

MOSFET N-CH 650V 70A TO-247 [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 650

SIC MOSFET N-CH 61A TO247-4 [See More]

• Package Type: TO-247; TO-247-4
• I_DSS: 61000

• V_(BR)DSS: 1700
• Packing Method: Tube; Tube

MOSFET ULTRA JCT 600V 78A TO247 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 78000

• V_(BR)DSS: 600
• Packing Method: Tube; Tube

650V 83.2A 37m Ω@10V,33.1A 500W 3.5V@3.3mA null TO-247-3 MOSFETs ROHS [See More]

• Package Type: TO-247
• V_GS(off): 3.5

• V_(BR)DSS: 650
• r_DS(on): 0.0370

N650V,RD(MAX) <170M@10V,VTH2.5V~4 [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 650

SIC MOSFET N-CH 41A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 41000

• V_(BR)DSS: 1200
• Packing Method: Tube; Tube

MOSFET N-CH 2200V 600MA TO247HV [See More]

• Package Type: TO-247; TO-247-3 Variant
• I_DSS: 600

• V_(BR)DSS: 2200
• Packing Method: Tube; Tube

TO-247 MOSFETs ROHS [See More]

• Package Type: TO-247

MOSFET N-CH 650V 20A TO-247 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 20000

• Transistor Technology / Material: MOSFET (Metal Oxide)
• T_J: -55 to 150

TRANS SJT 1700V 4A TO247AB [See More]

• Package Type: TO-247; TO-247-3
• Packing Method: Tube; Tube

• V_(BR)DSS: 1700

MOSFET N-CH 75V 140A TO247 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 140000

• V_(BR)DSS: 75
• Packing Method: Tube; Tube

TO-247-3 MOSFETs ROHS [See More]

• Package Type: TO-247

MOSFET N-CH 55V 75A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: MOSFET (Metal Oxide)

• Polarity: N-Channel; N-Channel
• V_(BR)DSS: 55

GANFET N-CH 650V 34.5A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 34500

• V_(BR)DSS: 650
• Packing Method: Tube; Tube

MOSFET N-CH 200V 220A X4 TO-247 [See More]

• Package Type: TO-247; TO-247-3
• I_DSS: 220000

• V_(BR)DSS: 200
• Packing Method: Tube; Tube

100V 203A 1.7m Ω@100A,10V 3.8V@278uA N Channel TO-247-3 MOSFETs ROHS [See More]

• Package Type: TO-247
• V_(BR)DSS: 100

• Polarity: N-Channel
• V_GS(off): 3.8