Wafer Bonding

Description: has a 1.5µm placement accuracy, making component assembly practical and cost-effective. A specialized configuration of the 6500 Die Bonder for wafer scale packaging eutectic die bonding is also available. Wafer Scale Packaging (WSP) Wafer Scale Packaging (WSP

Description: Overview Palomar Technologies' 3880 Die Bonder component placement die attach system features a state of the art, integrated Z-Theta bidirectional 8-tool bond head, making it the fastest and most reliable multiple die-type bonder on the market. The machine’s 5um placement

Description: the wafer level. Processes include flip chip solder reflow, solder lid sealing, wafer to wafer bonding using solder, glass, adhesives and direct fusion. Wafer Aligner Capabilities Alignment of wafers of to 8 inch (200mm diameter) Fully adjustable stages for

• Form Factor: Other
• Maximum Wafer / Part Size: 100 to 200 mm
• Measurement Capability: Other
• Mounting / Loading: Other

Description: . Automated presentation of dual 8” wafers, or up to 72 wafflepacks, or tape dispensers provides a high production, flexible parts presentation platform. The 6 position, bi-directional tool turret allows “on-the-fly” tool changes to maximize speed and flexibility. A variety of

Description: Semiconductor devices - Micro-electromechani cal devices Part 9: Wafer to wafer bonding strength measurement for MEMS

Description: Semiconductor devices - Micro-electromechani cal devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

Description: IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS

Description: Semiconductor devices \x96 Micro-electromechani cal devices \x96 Part 9: Wafer to wafer bonding strength measurement for MEMS

Description: nickel-gold coating is resistant to oxidation and protects the wafer carrier against corrosion. Furthermore, our nickel-gold layers are the bonding interface to reflector layer and heat spreader. Alongside nickel-gold, we also supply other coatings, for example made of ruthenium,

Description: reliability of Si chip and thermal heat cycling. According to direct wafer bonding technology, polished semiconductor wafers can be bonded together without adhesives. Direct wafer bonding requires very flat and high smooth surface (Ra=0.05um), Innovacera AlN

• Applications: Other
• Performance Features: Specialty / Other
• Shape / Form: Wafer / Substrate
• Specialty Ceramic Type: Aluminum Nitride

Description: A ceramic wafer chuck is a specialized tool employed in the semiconductor industry to hold wafers in a secure position. It functions as a stable platform that guarantees consistent contact and precise positioning of the wafer during many procedures, including lithography,

• Applications: Chemical / Materials Processing, Electrical / HV Parts
• Shape / Form: Wafer Carrier / Holder

Description: IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS

Description: TELICA, a cutting-edge multi-axes platform, is revolutionizing semiconductor back-end applications with its dual gantry architecture, offering unmatched accuracy and throughput for advanced die bonding applications and more. TELICA is a multi-axes platform designed for semiconductor back

• Actuation Type: Electrical
• Axis Configuration: X-Y-Z Axes
• Drive Specifications: Direct Drive, Other
• Features: Multi-position

Description: Wafer production technology requires extreme precision components, whether for reticle stages, wafer stages or imaging technologies. ZYGO is a leading supplier of stage positioning components, serving the semiconductor industry and emerging EUV technologies through multiple custom

Description: Standard

Description: Standard grade micron synthetic diamond powder designed for metal bond systems. Designed for reliable and secure performance in polishing applications and lapping of glass, wafers, and polycrystalline diamond.

• Abrasive Grain Type: Diamond
• Type: Lapping, Polishing

Description: Standard grade micron synthetic diamond powder designed for resin bond systems. Designed for reliable and secure performance in polishing applications and lapping of glass, wafers, and polycrystalline diamond.

• Abrasive Grain Type: Diamond
• Type: Lapping, Polishing

Description: Premium micron synthetic diamond powder designed for metal bond systems. Designed for exceptional performance when slicing and dicing during processing of silicon wafers, including lapping of glass and ceramics.

• Abrasive Grain Type: Diamond
• Type: Lapping, Specialty / Other

Description: Premium micron synthetic diamond powder designed for resin bond systems. Designed for exceptional performance when slicing and dicing during processing of silicon wafers, including lapping of glass and ceramics.

• Abrasive Grain Type: Diamond
• Type: Lapping, Specialty / Other

Description: Non-Conductive Coating for Bonding of Stacked Wafers. This material is perfectly adapted for high reliable ceramic attaching applications. Ideal for screen printing.

• Chemical / Polymer System Type: Epoxy (EP)
• Coeff. of Thermal Expansion (CTE): 13.89 µin/in-F
• Composition: Unfilled
• Cure Type / Technology: Thermosetting / Crosslinking, Single Component System

Description: . We have strong experience industrializing complex MEMS with special metals, sensitive DRIE, Wafer level packaging, nano-imprint, glass processing, SOI, etc.… We have adopted an open collaborative approach to reduce your time to market and minimize your risks. Flexible

• Capabilities: Dry Etching (Plasma / RIE), Inspection / Testing, Metallization - Electroplating, Oxidation / Doping, Packaging / Backend Processing, Photolithography, Screen Printing, Wafer Bonding, Wet / Chemical Etching
• Location: Europe Only
• Materials: Silicon, Quartz, SOI, Specialty / Other
• Services: Design / Engineering, Prototyping, Production, R & D / Development

Description: concentration, particle size, formulation or container size. Slurries can also be supplied as a concentrate to be diluted by the customer or suspension treated for use when no slurry agitation is available. Most Lapmaster diamond slurries can be manufactured with resin bond, metal

• Abrasive Grain Type: Diamond
• Form: Slurry
• Grading / Grit System: Micron Graded
• Grit Size: 0.1000 to 45

Description: concentration, particle size, formulation or container size. Slurries can also be supplied as a concentrate to be diluted by the customer or suspension treated for use when no slurry agitation is available. Most Lapmaster diamond slurries can be manufactured with resin bond, metal

• Abrasive Grain Type: Diamond
• Form: Slurry
• Grading / Grit System: Micron Graded
• Grit Size: 0.1000 to 45

Description: concentration, particle size, formulation or container size. Slurries can also be supplied as a concentrate to be diluted by the customer or suspension treated for use when no slurry agitation is available. Most Lapmaster diamond slurries can be manufactured with resin bond, metal

• Abrasive Grain Type: Diamond
• Form: Slurry
• Grading / Grit System: Micron Graded
• Grit Size: 0.1000 to 45

Description: . Our substrates are ready to use as-supplied or can be further processed. They are compatible with mechanical dicing, laser scribing and cutting, thick film hybrid metallizing, thick film refractory metallizing, thin film metallizing and direct bond copper processes. Components

• Applications: Electronics / RF-Microwave
• Coeff. of Thermal Expansion (CTE): 4.5 µm/m-C
• Density: 3.26 g/cc
• Dielectric Constant (Relative Permittivity): 9 #

Description: Semiconductor devices - Micro-electromechani cal devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

Description: Semiconductor devices - Micro-electromechani cal devices - Part 9: Wafer to wafer bonding strength measurement for MEMS (Endorsed by AENOR in June of 2012.)

Description: No Description Provided

• Capabilities: 2D / Surface Micromachining, 3D / Bulk Micromachining, Dielectric / CVD Thin Film, Dry Etching (Plasma / RIE), Inspection / Testing, LIGA, Metallization - Electroplating, Metallization - PVD Thin Film, Oxidation / Doping, Packaging / Backend Processing, Photolithography, Wafer Bonding,
• Location: North America, United States Only, Southwest US Only
• Materials: Silicon, Ceramic, Compound Semiconductor, Glass, Metal / Nickel, Quartz, Polymer / Organic, SOI
• Services: Design / Engineering, Prototyping, Pilot / Scale-Up, Production, R & D / Development, Specialty / Other

Description: No Description Provided

• Capabilities: 2D / Surface Micromachining, 3D / Bulk Micromachining, Dielectric / CVD Thin Film, Dry Etching (Plasma / RIE), Inspection / Testing, Metallization - Electroplating, Metallization - PVD Thin Film, Oxidation / Doping, Packaging / Backend Processing, Photolithography, Screen Printing, Wafer
• Location: North America, United States Only, Midwest US Only
• Materials: Silicon, Compound Semiconductor, Glass, Quartz, SOI
• Services: Design / Engineering, Prototyping, Pilot / Scale-Up, Production, R & D / Development, Specialty / Other

Description: Bond: vitrified or ceramic bond; Abrasive: Diamond; Dimension: As per your requirement. Applications: For centerless grinding; Material of workpiece: wafer, carbide, cermet, CBN, PCD,PCBN, crystal, rare-earth material, etc.

• Abrasive Grain Type: Superabrasive - Diamond
• Applications: Cylindrical / Centerless, Specialty / Other
• Bond Type: Vitrified
• Features: Closed Structure / High Concentration

Description: -twinning. It is specially formulated for the fabrication of pillars or pads for wafer level packaging applications that require hybrid bonding. It enables low temperature, high reliability copper to copper interconnects for die-to-die (D2D), die-to-wafer (D2W), and

Description: Bond: vitrified or ceramic bond; Abrasive: CBN or Diamond; Dimension: As per your requirement; Application: For surface grinding; Material of workpiece: wafer, carbide, cermets, CBN, PCD, PCBN, crystal, rare-earth material, ceramics, magnetic material. Semiconductor material,

• Abrasive Grain Type: Ceramic (e.g., Norton SG®, Norton Quantum®), Superabrasive - Diamond, Superabrasive - CBN
• Applications: Specialty / Other
• Bond Type: Vitrified, Other
• Features: Closed Structure / High Concentration

Description: Solvent-based adhesive for temporary bonding, ideal for GaAs/silicon wafer thinning. Debonds with IPA, no residue. Product Overview A solvent-based polymer specially developed for temporary bonding applications. STAYSTIK 336T thermoplastic adhesive paste is a low-modulus polymer

• Cure Type / Technology: Thermoplastic / Hot Melt
• Industry: Aerospace, Electronics, Medical / Food (Sanitary / FDA), Semiconductors / IC Packaging

Description: AlN substrate possesses a wide range of superior physical properties, including high breakdown electric field strength, thermal conductivity, resistivity, and so forth. In fields like LED packaging, power modules, wafer bonding, power resistors, and metalized substrates (such as thin

• Applications: Chemical / Materials Processing, Corrosion Protection, Electrical / HV Parts, Electronics / RF-Microwave, Refractory / High Temperature Materials
• Density: 3.25 to 3.35 g/cc
• Dielectric Strength: 1.70E7 V/m
• Material Type: Aluminum Nitride, Specialty Ceramic

Description: Mild alkaline non-cyanide high-purity hardness gold electroplating process with proven reliability and bondability. Product Overview MICROFAB Au3151 enables high-hardness gold bumping through the use of an organic hardness adjuster—something not achievable with conventional gold processes. It

Description: manufacturing: Rapid annealing of wafers, wafer bonding, eutectic bonding, thermocompression bonding. Electronic packaging: Welding of LED chips and power devices. Materials research: High temperature sintering, thermal cycle experiments. Aerospace: Material

• Applications: Other
• Heater Type: Other

Description: Tin-silver bump metallization bath allows high-speed electro-deposition of smooth, fine-grained, uniform tin silver alloy bumps. Product Overview MICROFAB TS-650 NXG is the tin-silver bump, pillar, and capping metallization process for wafer level packaging designs where

Description: be applied to a wafer backside by stencil printing and then B-staged in an oven. Once B-staged, this adhesive remains stable and can be placed into storage for several months. With proper die bonder setup along with incorporating adequate die placement pressure, a consistent minimum

• Features: Electrically Insulating / Dielectric
• Thermal Conductivity: 0.4400 W/m-K
• Viscosity: 55000 cP

Description: distance is adjustable from 0 to 8mm, depending on the sensor model. Because of their extremely precise sensing capabilities, Locon Sensors capacitive bonding sensors can detect even the smallest gold wires in any bonding machine to attach bare wafer chips to a base plate. Locon

• Body: Cylindrical
• Load: DC Load
• Operating Distance: 0.0 to 0.3150 inch
• Operating Temperature: -22 to 176 F

Description: element is hermetically sealed at the wafer level by bonding a second silicon lid wafer to the device using a glass frit. A separate ASIC device packaged with the sense element provides signal conditioning, and intelligent user-programmable application algorithms. The

• Number of Axes: Triaxial
• Operating Temperature: -40 to 185 F

Description: element is hermetically sealed at the wafer level by bonding a second silicon lid wafer to the device using a glass frit. A separate ASIC device packaged with the sense element provides signal conditioning, and intelligent user-programmable application algorithms. The

• Number of Axes: Triaxial
• Operating Temperature: -40 to 185 F

Description: element is hermetically sealed at the wafer level by bonding a second silicon lid wafer to the device using a glass frit. A separate ASIC device packaged with the sense element provides signal conditioning, and intelligent user-programmable application algorithms. The

• Number of Axes: Triaxial
• Operating Temperature: -40 to 185 F

Description: element is hermetically sealed at the wafer level by bonding a second silicon lid wafer to the device using a glass frit. A separate ASIC device packaged with the sense element provides signal conditioning, and intelligent user-programmable application algorithms. The

• Number of Axes: Triaxial
• Operating Temperature: -40 to 185 F

Description: incorporate key heating attributes that can be tailored for specific needs, including design considerations for anti-reflective properties for visible, NIR, SWIR, and IR, optimization to air or index matched for bonding, and delivery of color neutral performance in transmission, reflection,

• Fuel / Energy Source: Electric

Description: The DynaFly 70 Wafer and 72 Lug Series are the work horses of industrial butterfly valves. Pre-sized and preassembled with our MP series pneumatic actuators, these valves come standard with ductile iron body and disc and abrasion-resistant Buna-N Phenolic Backed Seat for stretch resistant,

• Actuation: Pilot Operated, Pneumatic
• Connection: Bolt Flange
• Media Temperature: -40 to 350 F
• Pressure Rating: 200 psi

Description: The DynaFly 70 Wafer and 72 Lug Series are the work horses of industrial butterfly valves. Pre-sized and preassembled with our MA series electric actuators, these valves come standard with ductile iron body and disc and abrasion-resistant Buna-N Phenolic Backed Seat for stretch resistant,

• Actuation: Electric
• Connection: Bolt Flange
• Media Temperature: -40 to 350 F
• Pressure Rating: 200 psi

Description: low roughness ensuring ease of attachment and minimized thermal interface resistances Diamond is grown on 2� wafers that can be laser cut to any required size Flat, smooth diamond with Metallization solutions enabling die bonding, standard soldering and brazing

• Device: Passive Heat Sink
• Height: 0.1000 to 0.5000 mm
• Length: 1.5 to 30 mm
• Material: Mixed Material, Other Materials

Description: . Typical Applications Lithography tools: optical steppers and scanners, e-beam & laser mask writers Metrology tools: Mask, wafer and LCD inspection and measurement tools, CD-SEMs Process equipment: memory repair tools, probers, die bonders, drilling tools

• Measurement: Displacement / Position
• Optical Configuration: Other

Description: wafer level packaging and Pillar in flip-chip packaging. * Not available in Europe Advantages Bamboo-like structure Matte Cu, Ra < 0.2 µm Flat topography Stable tensile strength Resistant to grain growth

• Applications: Other

Description: temperature 450°C up to 750°C Temperature ramp-up rate 3,5K/sec. Temperature cool-down rate 2K/sec. Rapid single wafer processing < 20°C/sec. Oxygen < 1,0ppm with purified N2 HELIUM leak rate 5 x 10¯9 mbarl/sec. 100 step recipe

• Configuration: Bench / Cabinet
• Temperature Range: 450 F

Description: widespread applications of lasers, including machining, material processing, spectroscopy, wafer inspection, light displays, medical diagnostics, laser printing, and data storage, etc. It has been shown that Nd:YVO4 based diode pumped solid state lasers are rapidly occupying the markets

• Damage Threshold: 750000 W/cm²
• Features: AR-Coated
• Material: Other / Specialty Material
• Optical Application: Infrared, Ultraviolet

Description: . Digi-Pas® DWL-3000XY 2-Axis model is used for installation, setup & maintenance precision measurement instruments in wafer foundry. Precise levelling with vibrometer diagnostic feature of DWL-3000XY enables machine to prevent unnecessary structural vibration affecting quality and

• Angular Range: 0.0 to 90 degrees
• Angular Resolution: 0.0100 degrees
• Measuring Technology: Electronic

Description: diamond 1700-1800 W/mK Customized sizes for unique applications: Diamond growth can be on 2, 2.5 and 3? wafers. Free standing diamond can be grown to thicknesses ranging from 80 µm to 1 mm. Specific diameters and geometries can be laser cut to produce custom parts

• Materials: Photonics DIAMOND
• Thickness: 0.1500 to 0.5000 mm
• Wedged or Parallel?: Parallel
• Window Type: Plane Windows

Description: highest speed for optimising productive utilization. Digi-Pas® DWL-3500XY is used for aligning precision fixtures. Absolute levelling and positional accuracy are required in meeting tight tolerance for highest quality in many manufacturing processes within semiconductor wafer

• Angular Range: 0.0 to 20 degrees
• Angular Resolution: 1.00E-3 degrees
• Measuring Technology: Electronic

Description: electrode materials for lithium batteries. Metal fluorides are notorious for their poor electronic conductivity due to the large bandgap induced by the highly ionic character of the metal-halogen bond. This point had kept them away from the radar screen in the search for improved electrode