SOT223 Power MOSFET
from Infineon Technologies AG
Cost-effective drop-in replacement for DPAK. Infineon is growing the portfolio of CoolMOS ™ CE with the SOT-223 package as a cost effective alternative to DPAK that also enables footprint reduction in some designs. The package can be placed on a typical DPAK footprint and comes with only a... [See More]
- Package Type: SOT223; PG-SOT223-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 1.4
from Rochester Electronics
80 V, 1 A PNP medium power transistors [See More]
- Package Type: SOT223; SOT-223
- Packing Method: Tape Reel; Tape & Reel
from Infineon Technologies AG
600V CoolMOS ™ PFD7 superjunction MOSFET in SOT-223. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPN60R1K0PFD7S) completes the CoolMOS ™ 7 offering for consumer applications. The IPN60R1K0PFD7S in a SOT-223 package features RDS(on) of 1,000mOhm resulting in low switching losses. [See More]
- Package Type: SOT223; PG-SOT223-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 1
from Rochester Electronics
Power Field-Effect Transistor [See More]
- Package Type: SOT223; SOT-223-4
- Packing Method: Tape Reel; Tape & Reel
from Infineon Technologies AG
Combining excellent performance and ease-of-use. CoolMOS ™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a... [See More]
- Package Type: SOT223; PG-SOT223-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.3600
from Infineon Technologies AG
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950 V CoolMOS ™ P7 series delivers... [See More]
- Package Type: SOT223; PG-SOT223-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 1.2
from Infineon Technologies AG
150V Single N-Channel IR MOSFET in a SOT-223 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered... [See More]
- Package Type: SOT223; SOT223
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.1850
from Infineon Technologies AG
OptiMOS ™ P-Channel MOSFET 150V in SOT-223. OptiMOS ™ P-Channel MOSFETs 150V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-Channel device is the reduction of design... [See More]
- Package Type: SOT223; PG-SOT223-4
- Transistor Technology / Material: Si/SiC
- Polarity: P-Channel; P
- rDS(on): 1.38
from Infineon Technologies AG
P-channel power MOSFETs 100 V in SOT-223 package for automotive applications. ISP16DP10LMA features a low RDS(on) of 0.067 Ohm for easy power loss management making it the best-in-class MOSFET in a SOT-223 package targeted for automotive applications. The main advantage of a P-channel device is the... [See More]
- Package Type: SOT223; PG-SOT223-4
- Transistor Technology / Material: Si/SiC
- Polarity: P-Channel; P
- rDS(on): 0.1670
from Infineon Technologies AG
N-Channel Small Signal MOSFET 240 V in SOT-223 package. Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels... [See More]
- Package Type: SOT223; PG-SOT223-4
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- Operating Mode: Enhancement