TO-220 Power MOSFET
from Richardson RFPD
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies. [See More]
- Package Type: TO-220; TO-220
- rDS(on): 4
from Infineon Technologies AG
500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.1900
from Win Source Electronics
Win Source Part Number: 1013896-FCPF250N65S3L1-F154. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 1,000. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. [See More]
- Package Type: TO-220; SOT3
- QG: 24
- Polarity: N-Channel
- PD: 31000
from Rochester Electronics
8A NPN DARLINGTON POWER TRANSISTOR [See More]
- Package Type: TO-220; TO-220AB
from Infineon Technologies AG
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.0600
from Win Source Electronics
Win Source Part Number: 1014772-SSP4N90A. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 900 V. Current - Continuous Drain (Id) @ 25... [See More]
- Package Type: TO-220; SOT3
- QG: 46
- Polarity: N-Channel
- PD: 120000
from Rochester Electronics
Power Bipolar Transistor, 2A, 100V, PNP [See More]
- Package Type: TO-220; TO-220FM
from Infineon Technologies AG
CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.0990
from Win Source Electronics
Win Source Part Number: 1034371-NTPF110N65S3HF. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: FRFET ®, SuperFET ® III. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]
- Package Type: TO-220; SOT3
- QG: 62
- Polarity: N-Channel
- PD: 240000
from Rochester Electronics
Power Bipolar Transistor, PNP [See More]
- Package Type: TO-220; TO-220-3FP
from Infineon Technologies AG
Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.2800
from Win Source Electronics
Win Source Part Number: 1058688-FCPF360N65S3R0L-F154. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 1,000. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. [See More]
- Package Type: TO-220; SOT3
- QG: 18
- Polarity: N-Channel
- PD: 27000
from Rochester Electronics
Power MOSFET (N-ch 700V [See More]
- Package Type: TO-220; TO-220SIS
- Packing Method: Tube; Tube
- Polarity: N-Channel
from Infineon Technologies AG
Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.1250
from Win Source Electronics
Win Source Part Number: 1065493-IRF613. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 150 V. Current - Continuous Drain (Id) @ 25 °C:... [See More]
- Package Type: TO-220; SOT3
- QG: 8.2
- Polarity: N-Channel
- PD: 43000
from Rochester Electronics
Power Field-Effect Transistor [See More]
- Package Type: TO-220; TO-220FP
from Infineon Technologies AG
Infineon ’s answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the new 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.3600
from Win Source Electronics
Win Source Part Number: 1065497-IRF632. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 200 V. Current - Continuous Drain (Id) @ 25 °C:... [See More]
- Package Type: TO-220; SOT3
- QG: 30
- Polarity: N-Channel
- PD: 75000
from Rochester Electronics
Nch Single Power Mosfet 60V 70A 5.8Mohm Mp-45F/To-220 [See More]
- Package Type: TO-220; TO-2204
- Packing Method: Tube; Tube
from Infineon Technologies AG
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950 V CoolMOS ™ P7 series delivers... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 1.2
from Win Source Electronics
Win Source Part Number: 1082905-NTPF250N65S3H. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. Current -... [See More]
- Package Type: TO-220; SOT3
- QG: 24
- Polarity: N-Channel
- PD: 29000
from Rochester Electronics
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin [See More]
- Package Type: TO-220; TO-220
- Packing Method: Tube; Tube
from Infineon Technologies AG
600V CoolMOS ™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220 FullPAK narrow-lead package features... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.1250
from Win Source Electronics
Win Source Part Number: 1088242-RFP4N05. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C:... [See More]
- Package Type: TO-220; SOT3
- PD: 25000
- Polarity: N-Channel
- TJ: -55 to 150
from Rochester Electronics
Power Field-Effect Transistor, 10A I(D), 650V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB [See More]
- Package Type: TO-220; TO-220-3 Full Pack
- rDS(on): 0.3600
- Polarity: N-Channel
- Packing Method: Tube; Tube
from Infineon Technologies AG
Infineon's answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.3600
from Win Source Electronics
Win Source Part Number: 1119426-RFP45N02L. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 20 V. Current - Continuous Drain (Id) @ 25... [See More]
- Package Type: TO-220; SOT3
- QG: 60
- Polarity: N-Channel
- PD: 90000
from Rochester Electronics
High Speed Switching N-Channel Power MosFET [See More]
- Package Type: TO-220; TO-220FN
- Packing Method: Tray
- Polarity: N-Channel
from Infineon Technologies AG
500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.1900
from Win Source Electronics
Win Source Part Number: 1209589-FCPF250N65S3R0L-F154. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. [See More]
- Package Type: TO-220; SOT3
- QG: 24
- Polarity: N-Channel
- PD: 31000
from Rochester Electronics
Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET [See More]
- Package Type: TO-220; TO-220FL
- Packing Method: Tube; Tube
- Polarity: N-Channel
from Infineon Technologies AG
Optimized power MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.0600
from Win Source Electronics
Win Source Part Number: 1214795-TK22A65X5,S5X. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. Current - Continuous Drain (Id) @ 25... [See More]
- Package Type: TO-220; SOT3
- QG: 50
- Polarity: N-Channel
- PD: 45000
from Rochester Electronics
IPA057N06 - 12V-300V N-Channel Power MOSFET [See More]
- Package Type: TO-220; TO-220-3
- Packing Method: Tube; Tube
- Polarity: N-Channel
from Infineon Technologies AG
Infineon ’s best price performance Superjunction MOSFET for low frequency switching applications in TO-220 package. With a design optimized for low conduction losses, the 600V CoolMOS ™ S7 Superjunction MOSFET (IPP60R065S7) in TO-220 features an optimal RDS(on) x price for low switching... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.0650
from Win Source Electronics
Manufacturer: onsemi. Win Source Part Number: 1324338-NTP165N65S3H. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Packaging: Tube. Standard Package: 50. Mounting: Through Hole. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage... [See More]
- Package Type: TO-220; SOT3; TO-220-3
- QG: 35
- Polarity: N-Channel
- PD: 142000
from Infineon Technologies AG
Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.0700
from Win Source Electronics
Manufacturer: Fuji Electric. Win Source Part Number: 158666-2SJ477-01MR. Category: Discrete Semiconductor Products. Family: JFETs(Junction Field Effect). Family Name: 2SJ477-01MR. Alternative Parts (Cross-Reference): TSM480P06CIC0G; AP9577GI;. Introduction Date: June 07, 2000. ECCN: EAR99. Estimated... [See More]
- Package Type: TO-220; SOT3
from Infineon Technologies AG
CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.1200
from Win Source Electronics
Manufacturer: Fuji Electric. Win Source Part Number: 160099-2SK3502-01MR. Category: Discrete Semiconductor Products. Family: JFETs(Junction Field Effect). Family Name: 2SK3502-01MR. Alternative Parts (Cross-Reference): 2SK4099LS-1E; R6009ENX; R6009KNX; R6007KNX;. Introduction Date: June 26, 2001. [See More]
- Package Type: TO-220; SOT3
from Infineon Technologies AG
The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPP65R041CFD7 in a TO-220 package is ideally suited for resonant topologies in industrial... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.0410
from Win Source Electronics
Manufacturer: Fuji Electric. Win Source Part Number: 160118-2SK3530-01MR. Category: Discrete Semiconductor Products. Family: JFETs(Junction Field Effect). Family Name: 2SK3530-01MR. Alternative Parts (Cross-Reference): TSM10N80CI C0; FQPF7N80C-NL; TSM10N80CI C0G; FQPF6N80;. Introduction Date:... [See More]
- Package Type: TO-220; SOT3
from Infineon Technologies AG
Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.0450
from Win Source Electronics
Manufacturer: Fuji Electric. Win Source Part Number: 160235-2SK3679-01MR. Category: Discrete Semiconductor Products. Family: JFETs(Junction Field Effect). Family Name: 2SK3679-01MR. Alternative Parts (Cross-Reference): 2SK3799(LBS1RBCONQ; 2SK3799(S4PHIL,Q); FQPF9N90C; FQPF9N90C-NL;. Introduction... [See More]
- Package Type: TO-220; SOT3
from Infineon Technologies AG
StrongIRFET ™ 2 single N-channel power MOSFET 100 V in TO-220 package. Infineon's StrongIRFET ™ 2 power MOSFET 100 V features low RDS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features. Broad availability from distribution... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.0026
from Win Source Electronics
Manufacturer: Fairchild Semiconductor. Win Source Part Number: 277048-HUFA75332P3. Category: Discrete Semiconductor Products. Family: FETs - Single. Family Name: HUFA75332P3. Alternative Parts (Cross-Reference): BUK7524-60; BUK556-60H; BUK556-60A; BUK7524-55,127;. Introduction Date: June 18, 2002. [See More]
- Package Type: TO-220; SOT3
from Infineon Technologies AG
The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management... [See More]
- Package Type: TO-220; TO220
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.0084
from Win Source Electronics
Manufacturer: Fuji Electric. Win Source Part Number: 1174895-FMV13N60E. Family Name: FMV13N60E. Manufacturer Homepage: www.fujielectric.co.jp/eng/fdt/scd. Alternative Parts (Cross-Reference): STP9NB60FP; STU9NA60; TK6A65D(STA4,Q); STF9N65M2;. Introduction Date: June 02, 2009. ECCN: EAR99. Estimated... [See More]
- Package Type: TO-220; SOT3
from Infineon Technologies AG
100V Dual N-Channel Digital Audio Power MOSFET in a TO-220 Full-Pak(Iso) package. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive... [See More]
- Package Type: TO-220; TO220
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N+N
- rDS(on): 0.0725
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1185970-IPA50R190CE. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. FET Feature: Super Junction. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO220-FP. Drive... [See More]
- Package Type: TO-220; SOT3
- V(BR)DSS: 500
- Polarity: N-Channel; N-Channel
- QG: 47.2
from Infineon Technologies AG
IPAN60R180CM8 600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss)... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.1800
from Win Source Electronics
Manufacturer: INTERNATIONAL RECTIFIER. Win Source Part Number: 1187435-IRF9520N. Family Name: IRF9520N. Manufacturer Homepage: www.irf.com. Alternative Parts (Cross-Reference): RFP8P10; IRFI9520GPBF; IRF9520; SiHFI9520G;. Introduction Date: May 13, 1998. ECCN: EAR99. Estimated EOL Date: Obsolete /... [See More]
- Package Type: TO-220; SOT3
from Infineon Technologies AG
IPP60R016CM8 600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.0160
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187479-IRF9Z34. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Package Type: TO-220; SOT3
- V(BR)DSS: 60
- Polarity: P-Channel; P-Channel
- QG: 34
from Infineon Technologies AG
950 V CoolMOS ™ PFD7 superjunction MOSFET in TO-220-3 package. The 950 V CoolMOS ™ PFD7 superjunction MOSFET (IPA95R130PFD7) complements the CoolMOS ™ 7 offering for high-power lighting and industrial SMPS applications. The IPA95R130PFD7 in the TO-220-3 package features RDS(on) of... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.1300
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1188163-IRFZ24. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Package Type: TO-220; SOT3
- V(BR)DSS: 60
- Polarity: N-Channel; N-Channel
- QG: 25
from Infineon Technologies AG
OptiMOS ™ 6 power MOSFET 150 V normal level in TO-220 package. IPP029N15NM6 OptiMOS ™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS ™ 6 150 V technology was designed to fulfill the requirements of both high and low... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.0029
from Win Source Electronics
Manufacturer: STMicroelectronics. Win Source Part Number: 1260673-STB60NF06LT4. Series: STripFET II. Packaging: Reel - TR. Operating Temperature Range: -65 °C ~ 175 °C (TJ). Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain... [See More]
- Package Type: TO-220; TO-263; SOT3
- PD: 110000
- QG: 66
- TJ: -65 to 175
from Infineon Technologies AG
StrongIRFET ™ 2 single N-channel power MOSFET 100 V in TO-220 package. Infineon's StrongIRFET ™ 2 power MOSFET 100 V features low RDS(on) of 3.0 mOhm, addressing a broad range of applications from low- to high-switching frequency. Additonally it is intended as the better price... [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.0030
from Win Source Electronics
Manufacturer: STMicroelectronics. Win Source Part Number: 1260768-STD12NM50N. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: STD12NM50N. Categories: Discrete Semiconductor Products. Supplier Device Package: DPAK. Drive Voltage (Max Rds On, Min... [See More]
- Package Type: TO-220; SOT3; TO-252 (DPAK)
- V(BR)DSS: 500
- Polarity: N-Channel; N-Channel
- QG: 30
from Infineon Technologies AG
IPP038N15NM6 OptiMOS ™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS ™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching. [See More]
- Package Type: TO-220; PG-TO220-3
- Transistor Technology / Material: Si/SiC
- Polarity: N-Channel; N
- rDS(on): 0.0038
from Win Source Electronics
Manufacturer: STMicroelectronics. Win Source Part Number: 1261765-STP5NK50Z. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Package Type: TO-220; SOT3
- V(BR)DSS: 500
- Polarity: N-Channel; N-Channel
- QG: 28
from ROHM Semiconductor USA, LLC
Transistor [See More]
- Package Type: TO-220; TO-220FM
- V(BR)DSS: 250
- Polarity: N-Channel
- IDSS: 5000
from ROHM Semiconductor GmbH
Discrete Semiconductors, MOSFETs, 190 to 800V Power MOSFETs, Nch 190 to 250V MOSFETs [See More]
- Package Type: TO-220; TO-220FM
- V(BR)DSS: 250
- Polarity: N-Channel
- IDSS: 5000
from ROHM Semiconductor GmbH
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits. [See More]
- Package Type: TO-220; TO-220AB
- V(BR)DSS: 650
- Polarity: N-Channel
- IDSS: 15000