TO-220 Power MOSFET

500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1900

2N6040 - Power Bipolar Transistor, 8A, 60V, PNP, TO-220AB, Plastic/Epoxy, 3 Pin [See More]

• Package Type: TO-220; TO-220AB

• Packing Method: Tube; Tube

Discrete Semiconductors, MOSFETs, 190 to 800V Power MOSFETs, Nch 190 to 250V MOSFETs [See More]

• Package Type: TO-220; TO-220FM
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 5000

Win Source Part Number: 1013896-FCPF250N65S3L1-F154. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 1,000. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. [See More]

• Package Type: TO-220; SOT3
• Q_G: 24

• Polarity: N-Channel
• P_D: 31000

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0600

2N6107 - 7.0 A, 70 V PNP Bipolar Power Transistor [See More]

• Package Type: TO-220; TO-220-3

• Packing Method: Tube; Tube

The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits. [See More]

• Package Type: TO-220; TO-220AB
• V_(BR)DSS: 650

• Polarity: N-Channel
• I_DSS: 15000

Win Source Part Number: 1014772-SSP4N90A. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 900 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-220; SOT3
• Q_G: 46

• Polarity: N-Channel
• P_D: 120000

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0600

2SA1395 - Power Bipolar Transistor, 2A, 100V, PNP [See More]

• Package Type: TO-220; TO-220FM

Win Source Part Number: 1034371-NTPF110N65S3HF. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: FRFET ®, SuperFET ® III. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Package Type: TO-220; SOT3
• Q_G: 62

• Polarity: N-Channel
• P_D: 240000

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1250

2SA1441 - Power Bipolar Transistor, PNP [See More]

• Package Type: TO-220; TO-220-3FP

Win Source Part Number: 1058688-FCPF360N65S3R0L-F154. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 1,000. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. [See More]

• Package Type: TO-220; SOT3
• Q_G: 18

• Polarity: N-Channel
• P_D: 27000

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1250

2SJ532 - P-Channel Power MOSFET, 60V, 20A [See More]

• Package Type: TO-220; TO-220CFM

• Polarity: P-Channel

Win Source Part Number: 1065493-IRF613. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 150 V. Current - Continuous Drain (Id) @ 25 °C:... [See More]

• Package Type: TO-220; SOT3
• Q_G: 8.2

• Polarity: N-Channel
• P_D: 43000

Infineon ’s answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the new 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.3600

2SK3714 - Switching P-Channel Power MOSFET [See More]

• Package Type: TO-220; TO-220FP

• Polarity: P-Channel

Win Source Part Number: 1065497-IRF632. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 200 V. Current - Continuous Drain (Id) @ 25 °C:... [See More]

• Package Type: TO-220; SOT3
• Q_G: 30

• Polarity: N-Channel
• P_D: 75000

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950V CoolMOS ™ P7 series delivers outstanding... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 1.2

2SK4144 - Nch Single Power Mosfet 60V 70A 5.8Mohm Mp-45F/To-220 [See More]

• Package Type: TO-220; TO-2204

• Packing Method: Tube; Tube

Win Source Part Number: 1082905-NTPF250N65S3H. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. Current -... [See More]

• Package Type: TO-220; SOT3
• Q_G: 24

• Polarity: N-Channel
• P_D: 29000

600V CoolMOS ™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220 FullPAK narrow-lead package features... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1250

D45H11 - Complementary Silicon Power Transistor [See More]

• Package Type: TO-220; TO-220 3 LEAD STANDARD
• Packing Method: Tube; Tube

• Polarity: Complementary

Win Source Part Number: 1088242-RFP4N05. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C:... [See More]

• Package Type: TO-220; SOT3
• P_D: 25000

• Polarity: N-Channel
• T_J: -55 to 150

Infineon's answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.3600

Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650V, 10A [See More]

• Package Type: TO-220; TO-220-3 Full Pack
• Packing Method: Tube; Tube

• Polarity: N-Channel

Win Source Part Number: 1119426-RFP45N02L. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 20 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-220; SOT3
• Q_G: 60

• Polarity: N-Channel
• P_D: 90000

500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1900

N-Channel PowerTrench MOSFET 75V, 242A [See More]

• Package Type: TO-220; TO-220 3L
• Packing Method: Tube; Tube

• Polarity: N-Channel

Win Source Part Number: 1209589-FCPF250N65S3R0L-F154. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. [See More]

• Package Type: TO-220; SOT3
• Q_G: 24

• Polarity: N-Channel
• P_D: 31000

Infineon ’s best price performance Superjunction MOSFET for low frequency switching applications in TO-220 package. With a design optimized for low conduction losses, the 600V CoolMOS ™ S7 Superjunction MOSFET (IPP60R022S7) in TO-220 features the best RDS(on) x price for low switching... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0220

Win Source Part Number: 1214795-TK22A65X5,S5X. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-220; SOT3
• Q_G: 50

• Polarity: N-Channel
• P_D: 45000

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0400

Manufacturer: onsemi. Win Source Part Number: 1324338-NTP165N65S3H. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Packaging: Tube. Standard Package: 50. Mounting: Through Hole. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage... [See More]

• Package Type: TO-220; SOT3; TO-220-3
• Q_G: 35

• Polarity: N-Channel
• P_D: 142000

Optimized power MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0600

Manufacturer: Fuji Electric. Win Source Part Number: 158666-2SJ477-01MR. Category: Discrete Semiconductor Products. Family: JFETs(Junction Field Effect). Family Name: 2SJ477-01MR. Alternative Parts (Cross-Reference): TSM480P06CIC0G; AP9577GI;. Introduction Date: June 07, 2000. ECCN: EAR99. Estimated... [See More]

• Package Type: TO-220; SOT3

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0700

Manufacturer: Fuji Electric. Win Source Part Number: 160099-2SK3502-01MR. Category: Discrete Semiconductor Products. Family: JFETs(Junction Field Effect). Family Name: 2SK3502-01MR. Alternative Parts (Cross-Reference): 2SK4099LS-1E; R6009ENX; R6009KNX; R6007KNX;. Introduction Date: June 26, 2001. [See More]

• Package Type: TO-220; SOT3

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0450

Manufacturer: Fuji Electric. Win Source Part Number: 160235-2SK3679-01MR. Category: Discrete Semiconductor Products. Family: JFETs(Junction Field Effect). Family Name: 2SK3679-01MR. Alternative Parts (Cross-Reference): 2SK3799(LBS1RBCONQ; 2SK3799(S4PHIL,Q); FQPF9N90C; FQPF9N90C-NL;. Introduction... [See More]

• Package Type: TO-220; SOT3

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPP65R060CFD7 in a TO-220 package is ideally suited for resonant topologies in industrial... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0600

Manufacturer: Fuji Electric. Win Source Part Number: 1174895-FMV13N60E. Family Name: FMV13N60E. Manufacturer Homepage: www.fujielectric.co.jp/eng/fdt/scd. Alternative Parts (Cross-Reference): STP9NB60FP; STU9NA60; TK6A65D(STA4,Q); STF9N65M2;. Introduction Date: June 02, 2009. ECCN: EAR99. Estimated... [See More]

• Package Type: TO-220; SOT3

Infineon's StrongIRFET ™ 2 power MOSFET 100 V features RDS(on) of 3 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPA030N10NF2S achieves 40 percent Qg improvement and 25 percent lower Qrr. Summary of Features. [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0030

Manufacturer: Infineon Technologies. Win Source Part Number: 1185970-IPA50R190CE. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. FET Feature: Super Junction. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO220-FP. Drive... [See More]

• Package Type: TO-220; SOT3
• V_(BR)DSS: 500

• Polarity: N-Channel; N-Channel
• Q_G: 47.2

StrongIRFET ™ 2 single N-channel power MOSFET 80 V in TO-220 package. Infineon's StrongIRFET ™ 2 power MOSFET 80 V features low RDS(on) of 1.6 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features. Broad availability from distribution... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0016

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187479-IRF9Z34. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-220; SOT3
• V_(BR)DSS: 60

• Polarity: P-Channel; P-Channel
• Q_G: 34

100V Single N-Channel StrongIRFET ™ Power MOSFET in a TO-220 package. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio... [See More]

• Package Type: TO-220; TO220
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0042

Manufacturer: Vishay Siliconix. Win Source Part Number: 1188163-IRFZ24. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-220; SOT3
• V_(BR)DSS: 60

• Polarity: N-Channel; N-Channel
• Q_G: 25

100V Single N-Channel Power MOSFET in a TO-220 FullPak package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery... [See More]

• Package Type: TO-220; FULLPAK220
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0360

Manufacturer: STMicroelectronics. Win Source Part Number: 1260673-STB60NF06LT4. Series: STripFET II. Packaging: Reel - TR. Operating Temperature Range: -65 °C ~ 175 °C (TJ). Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain... [See More]

• Package Type: TO-220; TO-263; SOT3
• P_D: 110000

• Q_G: 66
• T_J: -65 to 175

200V Dual N-Channel Digital Audio StrongIRFET ™ Power MOSFET in a TO-220 FullPak package. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The... [See More]

• Package Type: TO-220; TO220
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N+N
• r_DS(on): 0.1000

Manufacturer: STMicroelectronics. Win Source Part Number: 1260768-STD12NM50N. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: STD12NM50N. Categories: Discrete Semiconductor Products. Supplier Device Package: DPAK. Drive Voltage (Max Rds On, Min... [See More]

• Package Type: TO-220; SOT3; TO-252 (DPAK)
• V_(BR)DSS: 500

• Polarity: N-Channel; N-Channel
• Q_G: 30

950 V CoolMOS ™ PFD7 superjunction MOSFET in TO-220-3 package. The 950 V CoolMOS ™ PFD7 superjunction MOSFET (IPA95R130PFD7) complements the CoolMOS ™ 7 offering for high-power lighting and industrial SMPS applications. The IPA95R130PFD7 in the TO-220-3 package features RDS(on) of... [See More]

• Package Type: TO-220; PG-TO220-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1300

Manufacturer: STMicroelectronics. Win Source Part Number: 1261765-STP5NK50Z. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-220; SOT3
• V_(BR)DSS: 500

• Polarity: N-Channel; N-Channel
• Q_G: 28

Manufacturer: ON Semiconductor. Win Source Part Number: 1127760-2SK4088LS-1E. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220F-3FS. Drive Voltage (Max Rds On, Min Rds On):... [See More]

• Package Type: TO-220; SOT3
• V_(BR)DSS: 650

• Polarity: N-Channel; N-Channel
• Q_G: 37.6

Manufacturer: Texas Instruments. Win Source Part Number: 812416-CSD19534KCS. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 100V. Supplier Device Package: TO-220-3. Drive Voltage (Max Rds On, Min Rds On): 6V, 10V. [See More]

• Package Type: TO-220; SOT3
• Q_G: 22.2

• Polarity: N-Channel
• P_D: 118000

Manufacturer: ON Semiconductor. Win Source Part Number: 1173876-FDP5500. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-220; SOT3
• V_(BR)DSS: 55

• Polarity: N-Channel; N-Channel
• Q_G: 269

Transistor [See More]

• Package Type: TO-220; TO-220FM
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 5000