TO-247 Power MOSFET

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0170

Win Source Part Number: 1018480-RFG45N06. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 60 V. Current - Continuous Drain (Id) @ 25 °C:... [See More]

• Package Type: TO-247; SOT3
• Q_G: 150

• Polarity: N-Channel
• P_D: 131000

Power Bipolar Transistor, 10A, 100V, PNP, TO-247, Plastic/Epoxy, 3 Pin [See More]

• Package Type: TO-247; TO-247

• Packing Method: Tube; Tube

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies. [See More]

• Package Type: TO-247; TO-247

• r_DS(on): 0.0190

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0180

Win Source Part Number: 1214564-IRFP245. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 250 V. Current - Continuous Drain (Id) @ 25 °C:... [See More]

• Package Type: TO-247; SOT3
• Q_G: 59

• Polarity: N-Channel
• P_D: 150000

Power Field-Effect Transistor [See More]

• Package Type: TO-247; TO-247-4

• Packing Method: Tube; Tube

Super Junction MOSFET [See More]

• Package Type: TO-247; TO-247

• r_DS(on): 0.1000

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0240

Manufacturer: STMicroelectronics. Win Source Part Number: 1323980-SCTWA90N65G2V. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Packaging: Tube. Standard Package: 30. Mounting: Through Hole. Technology: SiCFET (Silicon Carbide). FET Type: N-Channel. Drain to... [See More]

• Package Type: TO-247; SOT3; TO-247-3
• Q_G: 157

• Polarity: N-Channel
• P_D: 565000

HEXFET Power MOSFET [See More]

• Package Type: TO-247; TO-247

• Packing Method: Tube; Tube

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0410

Manufacturer: STMicroelectronics. Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs. Package: Tube. Product Status: Active. FET Type: N-Channel. Technology: SiCFET (Silicon Carbide). Power Dissipation (Max): 388W (Tc). Operating Temperature: -55 °C ~... [See More]

• Package Type: TO-247; SOT3
• P_D: 388000

• Polarity: N-Channel

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0600

Manufacturer: Vishay. Win Source Part Number: 1249910-SIHG32N50D-GE3. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-247-3. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 30A (Tc). Family Name: SiHG32N50D. [See More]

• Package Type: TO-247; SOT3
• P_D: 390000

• Q_G: 96
• T_J: -55 to 150

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPW65R018CFD7 in TO-247 package is ideally suited for resonant topologies in... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0180

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187787-IRFP350. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 400

• Polarity: N-Channel; N-Channel
• Q_G: 150

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0190

Manufacturer: STMicroelectronics. Win Source Part Number: 1262362-STW38N65M5. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 650

• Polarity: N-Channel; N-Channel
• Q_G: 71

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0170

Manufacturer: STMicroelectronics. Win Source Part Number: 1262385-STW69N65M5. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: STW69N65M5. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247. Drive Voltage (Max... [See More]

• Package Type: TO-3; TO-247; SOT3
• V_(BR)DSS: 650

• Polarity: N-Channel; N-Channel
• Q_G: 143

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0990

Manufacturer: ON Semiconductor. Win Source Part Number: 811846-FDH5500. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 55V. Part Status: Obsolete (End Of Life). Supplier Device Package: TO-247-3. Drive Voltage... [See More]

• Package Type: TO-247; SOT3
• Q_G: 268

• Polarity: N-Channel
• P_D: 375000

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0190

Manufacturer: Infineon Technologies. Win Source Part Number: 1187751-IRFP048N. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247AC. Drive Voltage (Max Rds On, Min Rds On):... [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 55

• Polarity: N-Channel; N-Channel
• Q_G: 89

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0370

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187752-IRFP054. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 60

• Polarity: N-Channel; N-Channel
• Q_G: 160

650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode. in TO-247 4-pin package. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPZA65R029CFD7 in TO-247 4-pin package is ideally suited for resonant topologies in industrial applications, such as server,... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0290

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187754-IRFP064. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 60

• Polarity: N-Channel; N-Channel
• Q_G: 190

100V Single N-Channel StrongIRFET ™ Power MOSFET in a TO-247 Package. Benefits. Improved Gate, Avalanche and Dynamic dv/dt Ruggedness. Fully Characterized Capacitance and Avalanche SOA. Enhanced body diode dv/dt and di/dt Capability. Lead-Free; RoHS Compliant; Halogen-Free. Potential... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0017

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187760-IRFP150. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 100

• Polarity: N-Channel; N-Channel
• Q_G: 140

IPW60R016CM8 600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0160

Manufacturer: Infineon Technologies. Win Source Part Number: 1187762-IRFP150N. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247AC. Drive Voltage (Max Rds On, Min Rds On):... [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 100

• Polarity: N-Channel; N-Channel
• Q_G: 110

600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0240

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187764-IRFP17N50L. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 500

• Polarity: N-Channel; N-Channel
• Q_G: 130

600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0550

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187770-IRFP244. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 250

• Polarity: N-Channel; N-Channel
• Q_G: 63

IPZA60R016CM8 600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss)... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0160

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187773-IRFP254. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 250

• Polarity: N-Channel; N-Channel
• Q_G: 140

600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0240

Manufacturer: IXYS. Win Source Part Number: 1187775-IRFP260. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247AD. Drive Voltage (Max Rds On, Min Rds On): 10V. Status:... [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 200

• Polarity: N-Channel; N-Channel
• Q_G: 230

600 V CoolMOS ™ 8 power transistor. The 600 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS ™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0550

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187780-IRFP27N60K. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 600

• Polarity: N-Channel; N-Channel
• Q_G: 180

650 V CoolMOS ™ 8 power transistor. The 650 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS ™ 7 MOSFET family including C7 and CFD7. It comes with better efficiency compare to its predeccesor. 650 V CoolMOS ™ 8 offers the additional 50 V buffer to... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0180

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187783-IRFP31N50L. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 500

• Polarity: N-Channel; N-Channel
• Q_G: 210

950 V CoolMOS ™ PFD7 superjunction MOSFET in TO-247 package. The 950 V CoolMOS ™ PFD7 superjunction MOSFET (IPW95R060PFD7) complements the CoolMOS ™ 7 offering for high power lighting and industrial SMPS applications. The IPW95R060PFD7 in the TO-247 package features RDS(on) of 60 m... [See More]

• Package Type: TO-247; PG-TO247-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0600

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187784-IRFP32N50K. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 500

• Polarity: N-Channel; N-Channel
• Q_G: 190

650 V CoolMOS ™ 8 power transistor. The 650 V CoolMOS ™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS ™ 7 MOSFET family including C7 and CFD7. It comes with better efficiency compare to its predeccesor. 650 V CoolMOS ™ 8 offers the additional 50 V buffer to... [See More]

• Package Type: TO-247; PG-TO247-4
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0180

Manufacturer: Infineon Technologies. Win Source Part Number: 1187786-IRFP3415PBF. Packaging: Bulk. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247AC. Drive Voltage (Max Rds On, Min Rds On):... [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 150

• Polarity: N-Channel; N-Channel
• Q_G: 200

Manufacturer: Vishay Siliconix. Win Source Part Number: 810140-IRFP344PBF. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 450V. Part Status: Obsolete (End Of Life). Supplier Device Package: TO-247-3. Drive Voltage... [See More]

• Package Type: TO-247; SOT3
• Q_G: 80

• Polarity: N-Channel
• P_D: 150000

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187789-IRFP350LC. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 400

• Polarity: N-Channel; N-Channel
• Q_G: 76

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187790-IRFP360. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-247; SOT3
• V_(BR)DSS: 400

• Polarity: N-Channel; N-Channel
• Q_G: 210

SCT3017AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. [See More]

• Package Type: TO-247
• V_(BR)DSS: 650

• Transistor Technology / Material: Silicon Carbide
• r_DS(on): 0.0170

SCT4018KR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that... [See More]

• Package Type: TO-247; TO-247-4L
• r_DS(on): 0.0180

• V_(BR)DSS: 1200
• I_DSS: 81000

SCT4036KE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. Advantages of ROHM's 4th Generation SiC MOSFET. This series has... [See More]

• Package Type: TO-247; TO-247N
• r_DS(on): 0.0360

• V_(BR)DSS: 1200
• I_DSS: 43000