Enhancement Power MOSFET

Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of... [See More]

• Operating Mode: Enhancement
• Q_G: -13.3

• Polarity: P-Channel
• T_J: -55 to ?

IGT60R190D1S - 600V CoolGaN enhancement-mode Power Transistor [See More]

• Operating Mode: Enhancement
• Packing Method: Tape Reel; Tape & Reel

• Package Type: HSOF8

The used OptiMOS ™ technology combined with the PQFN 3x3 package offers an optimized solution for DC-DC applications with space critical requirements. The BSZ0909ND fits perfectly in wireless charging or drives (e.g. multicopter) architectures where designers target to simplify the layout and... [See More]

• Operating Mode: Enhancement
• Q_G: 1.8

• Polarity: N-Channel
• T_J: -55 to 150

3.1A,100V, AVALANCHE RATED, P-Channel ENHANCEMENT-MODE POWER MOSFET [See More]

• Operating Mode: Enhancement
• Package Type: TO-252 (DPAK); TO-252AA

• Polarity: P-Channel

N-Channel Enhancement-Mode RF Power Lateral LDMOSFET [See More]

• Operating Mode: Enhancement
• Type: LDMOSFET

• Polarity: N-Channel
• Package Type: CFM2F

30A, 60V, Logic Level N-Channel Enhancement-Mode Power MOSFET, TO-220AB [See More]

• Operating Mode: Enhancement
• Package Type: TO-220; TO-220AB

• Polarity: N-Channel

Self-Aligning Silicon Gate Sturcture. Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage - 0.6V typ. [See More]

• Operating Mode: Enhancement
• Type: LDMOSFET

• Polarity: N-Channel
• V_(BR)DSS: 25