Enhancement Power MOSFET Datasheets

20V-250V P-Channel Power MOSFET -- BSL207SP
from Infineon Technologies AG

Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of... [See More]

  • Operating Mode: Enhancement
  • QG: -13.3
  • Polarity: P-Channel
  • TJ: -55 to ?
FET General Purpose Power -- 2N6764
from Advanced Semiconductor, Inc.

38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 100
  • Polarity: N-Channel
  • rDS(on): 0.0550
FET General Purpose Power -- VQ1000J
from Calogic, LLC

0.225 A, 60 V, 5.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 60
  • Polarity: N-Channel
  • rDS(on): 5.5
FET General Purpose Power -- SI2301
from Micro Commercial Components Corp.

2.8 A, 20 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 20
  • Polarity: P-Channel
  • rDS(on): 0.1200
FET General Purpose Power -- ME12N06EL-F
from Nihon Inter Electronics Corporation

12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 60
  • Polarity: N-Channel
  • rDS(on): 0.1800
FET General Purpose Power -- FS16SM-10
from Powerex, Inc.

16 A, 500 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 500
  • Polarity: N-Channel
  • rDS(on): 0.5600
FET General Purpose Power -- 2N7228
from Sensitron Semiconductor

12 A, 500 V, 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 500
  • Polarity: N-Channel
  • rDS(on): 0.4150
FET General Purpose Power -- 2SJ370
from Shindengen Electric Manufacturing Co., Ltd.

10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 60
  • Polarity: P-Channel
  • rDS(on): 0.1600
FET General Purpose Power -- 2N6661
from Solitron Devices, Inc.

90 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 90
  • Polarity: N-Channel
  • rDS(on): 4
SD1107BD
from Universal Semiconductor, Inc.

Apps include high speed pulse amplifiers & line drivers [See More]

  • Operating Mode: Enhancement
  • Type: DMOSFET
  • Polarity: N-Channel; P-Channel (optional feature); Complementary (optional feature)
  • V(BR)DSS: 130