Enhancement Power MOSFET

7 Results
Home MOSFET, 20V-250V P-Channel Power MOSFET -- BSL207SP
from Infineon Technologies AG

Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of... [See More]

  • Operating Mode: Enhancement
  • QG: -13.3
  • Polarity: P-Channel
  • TJ: -55 to ?
IGT60R190D1SATMA1 [IGT60R190D1SATMA1 from Infineon Technologies AG]
from Rochester Electronics

IGT60R190D1S - 600V CoolGaN enhancement-mode Power Transistor [See More]

  • Operating Mode: Enhancement
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: HSOF8
Home MOSFET, 20V-300V N-Channel Power MOSFET, 20V-30V N-Channel Power MOSFET -- BSZ0909ND
from Infineon Technologies AG

The used OptiMOS ™ technology combined with the PQFN 3x3 package offers an optimized solution for DC-DC applications with space critical requirements. The BSZ0909ND fits perfectly in wireless charging or drives (e.g. multicopter) architectures where designers target to simplify the layout and... [See More]

  • Operating Mode: Enhancement
  • QG: 1.8
  • Polarity: N-Channel
  • TJ: -55 to 150
IRFR91109A [IRFR91109A from L3Harris Technologies, Inc.]
from Rochester Electronics

3.1A,100V, AVALANCHE RATED, P-Channel ENHANCEMENT-MODE POWER MOSFET [See More]

  • Operating Mode: Enhancement
  • Package Type: TO-252 (DPAK); TO-252AA
  • Polarity: P-Channel
MHT1000HR5178 [MHT1000HR5178 from NXP Semiconductors]
from Rochester Electronics

N-Channel Enhancement-Mode RF Power Lateral LDMOSFET [See More]

  • Operating Mode: Enhancement
  • Type: LDMOSFET
  • Polarity: N-Channel
  • Package Type: CFM2F
RFP30N6LER4541 [RFP30N6LER4541 from L3Harris Technologies, Inc.]
from Rochester Electronics

30A, 60V, Logic Level N-Channel Enhancement-Mode Power MOSFET, TO-220AB [See More]

  • Operating Mode: Enhancement
  • Package Type: TO-220; TO-220AB
  • Polarity: N-Channel
SD210
from Universal Semiconductor, Inc.

Self-Aligning Silicon Gate Sturcture. Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage - 0.6V typ. [See More]

  • Operating Mode: Enhancement
  • Type: LDMOSFET
  • Polarity: N-Channel
  • V(BR)DSS: 25