Enhancement Power MOSFET Datasheets
from Infineon Technologies AG
Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of... [See More]
- Operating Mode: Enhancement
- QG: -13.3
- Polarity: P-Channel
- TJ: -55 to ?
from Advanced Semiconductor, Inc.
38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE [See More]
- Operating Mode: Enhancement
- V(BR)DSS: 100
- Polarity: N-Channel
- rDS(on): 0.0550
from Calogic, LLC
0.225 A, 60 V, 5.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET [See More]
- Operating Mode: Enhancement
- V(BR)DSS: 60
- Polarity: N-Channel
- rDS(on): 5.5
from Micro Commercial Components Corp.
2.8 A, 20 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]
- Operating Mode: Enhancement
- V(BR)DSS: 20
- Polarity: P-Channel
- rDS(on): 0.1200
from Nihon Inter Electronics Corporation
12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA [See More]
- Operating Mode: Enhancement
- V(BR)DSS: 60
- Polarity: N-Channel
- rDS(on): 0.1800
from Powerex, Inc.
16 A, 500 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]
- Operating Mode: Enhancement
- V(BR)DSS: 500
- Polarity: N-Channel
- rDS(on): 0.5600
from Sensitron Semiconductor
12 A, 500 V, 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA [See More]
- Operating Mode: Enhancement
- V(BR)DSS: 500
- Polarity: N-Channel
- rDS(on): 0.4150
from Shindengen Electric Manufacturing Co., Ltd.
10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]
- Operating Mode: Enhancement
- V(BR)DSS: 60
- Polarity: P-Channel
- rDS(on): 0.1600
from Solitron Devices, Inc.
90 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 [See More]
- Operating Mode: Enhancement
- V(BR)DSS: 90
- Polarity: N-Channel
- rDS(on): 4
from Universal Semiconductor, Inc.
Apps include high speed pulse amplifiers & line drivers [See More]
- Operating Mode: Enhancement
- Type: DMOSFET
- Polarity: N-Channel; P-Channel (optional feature); Complementary (optional feature)
- V(BR)DSS: 130
