Enhancement Power MOSFET
from Infineon Technologies AG
Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of... [See More]
- Operating Mode: Enhancement
- QG: -13.3
- Polarity: P-Channel
- TJ: -55 to ?
from Infineon Technologies AG
The used OptiMOS ™ technology combined with the PQFN 3x3 package offers an optimized solution for DC-DC applications with space critical requirements. The BSZ0909ND fits perfectly in wireless charging or drives (e.g. multicopter) architectures where designers target to simplify the layout and... [See More]
- Operating Mode: Enhancement
- QG: 1.8
- Polarity: N-Channel
- TJ: -55 to 150
from Universal Semiconductor, Inc.
Self-Aligning Silicon Gate Sturcture. Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage - 0.6V typ. [See More]
- Operating Mode: Enhancement
- Type: LDMOSFET
- Polarity: N-Channel
- V(BR)DSS: 25