Shipping Tube / Stick Magazine Power MOSFET

Manufacturer: STMicroelectronics. Win Source Part Number: 1323980-SCTWA90N65G2V. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Packaging: Tube. Standard Package: 30. Mounting: Through Hole. Technology: SiCFET (Silicon Carbide). FET Type: N-Channel. Drain to... [See More]

• Packing Method: Tube; Tube
• Q_G: 157

• Polarity: N-Channel
• P_D: 565000

Power Bipolar Transistor, 15A, 60V, PNP [See More]

• Packing Method: Tube; Tube

• Package Type: TO-220; TO-220AB

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0600

Manufacturer: Vishay. Win Source Part Number: 1249910-SIHG32N50D-GE3. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-247-3. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 30A (Tc). Family Name: SiHG32N50D. [See More]

• Packing Method: Tube; Tube
• P_D: 390000

• Q_G: 96
• T_J: -55 to 150

Power Bipolar Transistor, 0.1A, 300V, NPN, TO-126, 3 Pin [See More]

• Packing Method: Tube; Tube

• Package Type: TO-126

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0990

Manufacturer: Broadcom Limited. Win Source Part Number: 1182029-HSSR-7111. Packaging: Tube. Type: Power MOSFET. Mounting Style: Through Hole. Input Type: DC. Current - Output / Channel: 1.6A. Voltage - Isolation: 1500VDC. Family Name: HSSR-7111. Categories: Isolators. Supplier Device Package: 8-DIP. [See More]

• Packing Method: Tube; Tube
• Package Type: SOT3

• T_J: -55 to 125

Power Field-Effect Transistor [See More]

• Packing Method: Tube; Tube

• Package Type: TO-262-3

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.2800

Manufacturer: Infineon Technologies. Win Source Part Number: 1185970-IPA50R190CE. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. FET Feature: Super Junction. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: PG-TO220-FP. Drive... [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 500

• Polarity: N-Channel; N-Channel
• Q_G: 47.2

Power Field-Effect Transistor [See More]

• Packing Method: Tube; Tube

• Package Type: TO-264-3, TO-264AA

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1250

Manufacturer: Infineon Technologies. Win Source Part Number: 1187102-IRF630NSPBF. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 200

• Polarity: N-Channel; N-Channel
• Q_G: 35

Power Field-Effect Transistor, 5A, 500V, N-Channel MOSFET [See More]

• Packing Method: Tube; Tube
• Package Type: CAN3/4

• Polarity: N-Channel

Infineon ’s answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the new 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.3600

Manufacturer: Infineon Technologies. Win Source Part Number: 1187298-IRF7471PBF. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 8-SO. Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V. [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 40

• Polarity: N-Channel; N-Channel
• Q_G: 32

Power MOSFET (N-ch 700V [See More]

• Packing Method: Tube; Tube
• Package Type: TO-220; TO-220SIS

• Polarity: N-Channel

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950 V CoolMOS ™ P7 series delivers... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 1.2

Manufacturer: Infineon Technologies. Win Source Part Number: 1187357-IRF7807Z. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 8-SO. Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V. [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 30

• Polarity: N-Channel; N-Channel
• Q_G: 11

Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Packing Method: Tube; Tube
• Package Type: IPAK-3

• Polarity: N-Channel

600V CoolMOS ™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220 FullPAK narrow-lead package features... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1250

Manufacturer: Infineon Technologies. Win Source Part Number: 1187387-IRF8113. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: 8-SO. Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V. [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 30

• Polarity: N-Channel; N-Channel
• Q_G: 36

Switching N-Channel Power MOSFET [See More]

• Packing Method: Tube; Tube
• Package Type: TO-3; TO-3P (MP-88)

• Polarity: N-Channel

Infineon's answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.3600

Manufacturer: Infineon Technologies. Win Source Part Number: 1187426-IRF9310PBF. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Family Name: IRF9310. Categories: Discrete Semiconductor Products. Supplier Device Package: 8-SO. Drive Voltage (Max Rds On, Min... [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 30

• Polarity: P-Channel; P-Channel
• Q_G: 165

Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Packing Method: Tube; Tube
• Package Type: TO-220; TO-220-3FP

• Polarity: N-Channel

500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1900

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187479-IRF9Z34. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 60

• Polarity: P-Channel; P-Channel
• Q_G: 34

Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB [See More]

• Packing Method: Tube; Tube
• r_DS(on): 0.0180

• Polarity: N-Channel
• Package Type: D2PAK

Optimized power MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0600

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187787-IRFP350. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247-3. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 400

• Polarity: N-Channel; N-Channel
• Q_G: 150

Power Field-Effect Transistor [See More]

• Packing Method: Tube; Tube

• Package Type: D2PAK7P

Infineon ’s best price performance Superjunction MOSFET for low frequency switching applications in TO-220 package. With a design optimized for low conduction losses, the 600V CoolMOS ™ S7 Superjunction MOSFET (IPP60R065S7) in TO-220 features an optimal RDS(on) x price for low switching... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0650

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187966-IRFR9110. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D-Pak. Drive Voltage (Max Rds On, Min Rds On): 10V. Status:... [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 100

• Polarity: P-Channel; P-Channel
• Q_G: 8.7

Power Bipolar Transistor, 10A, 100V, PNP, TO-247, Plastic/Epoxy, 3 Pin [See More]

• Packing Method: Tube; Tube

• Package Type: TO-247; TO-247

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0700

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187977-IRFR9220. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D-Pak. Drive Voltage (Max Rds On, Min Rds On): 10V. Status:... [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 200

• Polarity: P-Channel; P-Channel
• Q_G: 20

BLA1011-300 - 300W LDMOS Avionics Power Transistor [See More]

• Packing Method: Tube; Tube

• Package Type: SOT957A

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1200

Manufacturer: Infineon Technologies. Win Source Part Number: 1188061-IRFU1018EPBF. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: IRFU1018E. Categories: Discrete Semiconductor Products. Supplier Device Package: IPAK (TO-251). Drive... [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 60

• Polarity: N-Channel; N-Channel
• Q_G: 69

BLF521 - UHF Power VDMOS Transistor [See More]

• Packing Method: Tube; Tube

• Package Type: SOT172D

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPP65R041CFD7 in a TO-220 package is ideally suited for resonant topologies in industrial... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0410

Manufacturer: Vishay Siliconix. Win Source Part Number: 1188129-IRFU9214PBF. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: P-Channel. Family Name: IRFU9214. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-251AA. Drive Voltage (Max... [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 250

• Polarity: P-Channel; P-Channel
• Q_G: 14

BLL1214-250 - HF/VHF Power Transistor [See More]

• Packing Method: Tube; Tube

• Package Type: SOT502A

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0450

Manufacturer: Vishay Siliconix. Win Source Part Number: 1188163-IRFZ24. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 60

• Polarity: N-Channel; N-Channel
• Q_G: 25

Power Field-Effect Transistor, 75A, 40V, 0.008ohm, N-Channel, MOSFET [See More]

• Packing Method: Tube; Tube
• r_DS(on): 0.0080

• Polarity: N-Channel
• Package Type: SOT263B

CoolMOS ™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600 V, 650 V and 700 V CoolMOS ™ CE combine the optimal R DS(on) and package... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 1

Manufacturer: Vishay. Win Source Part Number: 1188502-IRL510L. Packaging: Tube. Mounting Style: Through Hole. Operating Temperature Range: -55 °C ~ 175 °C (TJ). Package: TO-262-3 Long Leads, I2Pak, TO-262AA. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 5.6A (Tc). Part... [See More]

• Packing Method: Tube; Tube
• T_J: -55 to 175

• Q_G: 6.1
• Package Type: SOT3

10 Amp, 450 V NPN Power Bipolar Transistor [See More]

• Packing Method: Tube; Tube

• Package Type: TO-220; TO-220-3 FullPak

A new benchmark in efficiency and thermal performance. 800V CoolMOS ™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 1.4

Manufacturer: Infineon Technologies. Win Source Part Number: 1188527-IRL7833S. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: IRL7833S. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min... [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 30

• Polarity: N-Channel; N-Channel
• Q_G: 47

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin [See More]

• Packing Method: Tube; Tube

• Package Type: TO-220; TO-220

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950 V CoolMOS ™ P7 series delivers... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.7500

Manufacturer: STMicroelectronics. Win Source Part Number: 1261765-STP5NK50Z. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 500

• Polarity: N-Channel; N-Channel
• Q_G: 28

High Speed, Dual Channel Power MOSFET Drivers [See More]

• Packing Method: Tube; Tube

• Package Type: SOIC8

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0170

Manufacturer: STMicroelectronics. Win Source Part Number: 1262362-STW38N65M5. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 650

• Polarity: N-Channel; N-Channel
• Q_G: 71

Automotive Power Module (APM), Automotive, 3-Phase, MOSFET [See More]

• Packing Method: Tube; Tube

• Package Type: APM20CBB / 20LD, PDD STD, R-EPS MODULE

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0180

Manufacturer: STMicroelectronics. Win Source Part Number: 1262385-STW69N65M5. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: STW69N65M5. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-247. Drive Voltage (Max... [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 650

• Polarity: N-Channel; N-Channel
• Q_G: 143

Power Field-Effect Transistor, 10A I(D), 650V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB [See More]

• Packing Method: Tube; Tube
• r_DS(on): 0.3600

• Polarity: N-Channel
• Package Type: TO-220; TO-220-3 Full Pack

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0240

Manufacturer: Microchip Technology. Win Source Part Number: 1264589-TC4427AVMF. Packaging: Tube. Mounting Style: SMD. Channel Type: Independent. Input Type: Non-Inverting. Driven Configuration: Low-Side. Number of Drivers: 2. Gate Type: N-Channel, P-Channel MOSFET. Logic Voltage - VIL, VIH: 0.8V,... [See More]

• Packing Method: Tube; Tube
• T_J: -40 to 150

• Polarity: N-Channel; P-Channel
• Package Type: SOT3

Power Field-Effect Transistor, 120A I(D), 75V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET [See More]

• Packing Method: Tube; Tube
• r_DS(on): 0.0032

• Polarity: N-Channel
• Package Type: TO-3; TO-3P

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0410

Manufacturer: Microchip Technology. Win Source Part Number: 1264590-TC4427EMF. Packaging: Tube. Mounting Style: SMD. Channel Type: Independent. Input Type: Non-Inverting. Driven Configuration: Low-Side. Number of Drivers: 2. Gate Type: N-Channel, P-Channel MOSFET. Logic Voltage - VIL, VIH: 0.8V,... [See More]

• Packing Method: Tube; Tube
• T_J: -40 to 150

• Polarity: N-Channel; P-Channel
• Package Type: SOT3

Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET [See More]

• Packing Method: Tube; Tube
• r_DS(on): 0.0030

• Polarity: N-Channel
• Package Type: DIP8

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0600

Manufacturer: Microchip Technology. Win Source Part Number: 1264592-TC4427VMF. Packaging: Tube. Mounting Style: SMD. Channel Type: Independent. Input Type: Non-Inverting. Driven Configuration: Low-Side. Number of Drivers: 2. Gate Type: N-Channel, P-Channel MOSFET. Logic Voltage - VIL, VIH: 0.8V,... [See More]

• Packing Method: Tube; Tube
• T_J: -40 to 150

• Polarity: N-Channel; P-Channel
• Package Type: SOT3

Power Field-Effect Transistor [See More]

• Packing Method: Tube; Tube

• Package Type: TO-220; TO-220FN

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPW65R018CFD7 in TO-247 package is ideally suited for resonant topologies in... [See More]

• Packing Method: Tube; TUBE
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0180

Manufacturer: STMicroelectronics. Win Source Part Number: 1279574-VND1NV04. Packaging: Tube. Output Type: N-Channel. Input Type: Non-Inverting. Interface: On/Off. Switch Type: General Purpose. Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage. Supply Voltage: Not Required. [See More]

• Packing Method: Tube; Tube
• T_J: -40 to 150

• Polarity: N-Channel
• Package Type: SOT3; TO-252 (DPAK)

Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET [See More]

• Packing Method: Tube; Tube
• Package Type: TO-220; TO-220FL

• Polarity: N-Channel

BM65364S-VA is an Intelligent Power Module composed of gate drivers, bootstrap diodes, MOSFETs. [See More]

• Packing Method: Tube
• Transistor Grade / Operating Range: Commercial

• T_J: -40 to 125

Bipolar Motor Driver Power MOSFET Parallel 36-VMFP [See More]

• Packing Method: Tube; Tube

• T_J: -10 to 150

SCT4036KE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. Advantages of ROHM's 4th Generation SiC MOSFET. This series has... [See More]

• Packing Method: Tube
• r_DS(on): 0.0360

• V_(BR)DSS: 1200
• I_DSS: 43000

R6015KNZ is Low on-resistance and ultra fast switching speed Power MOSFET. [See More]

• Packing Method: Tube
• V_(BR)DSS: 600

• Polarity: N-Channel
• I_DSS: 15000

FAIRCHILD SEMICONDUCTOR FCPF150N65F Power MOSFET, N Channel, 24 A, 650 V, 0.133 ohm, 10 V, 5 VNew [See More]

• Packing Method: Tube; Tube
• P_D: 39000

• Q_G: 94
• T_J: -55 to 150

R6011KNX is Low on-resistance and ultra fast switching speed Power MOSFET. [See More]

• Packing Method: Tube
• V_(BR)DSS: 600

• Polarity: N-Channel
• I_DSS: 11000

MOSFET >1200V High Voltage Power MOSFET [See More]

• Packing Method: Tube; Tube
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• r_DS(on): 2

R6015KNZ is Low on-resistance and ultra fast switching speed Power MOSFET, suitable for the switching application. [See More]

• Packing Method: Tube
• V_(BR)DSS: 600

• Polarity: N-Channel
• I_DSS: 15000

MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET [See More]

• Packing Method: Tube; Tube
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 500

BM63373S-VA/-VC is an Intelligent Power Module composed of gate drivers, bootstrap diodes, IGBTs, fly wheel diodes. [See More]

• Packing Method: Tube
• Package Type: HSDIP25

• T_J: -40 to 125
• Transistor Grade / Operating Range: Commercial

MOSFET Polar3 HiPerFET Power MOSFET [See More]

• Packing Method: Tube; Tube
• P_D: 500000

• Q_G: 42
• T_J: -55 to 150

BM63373S-VA/-VC is an Intelligent Power Module composed of gate drivers, bootstrap diodes, IGBTs, fly wheel diodes. [See More]

• Packing Method: Tube
• Package Type: HSDIP25VC

• T_J: -40 to 125
• Transistor Grade / Operating Range: Commercial

MOSFET POWER MOSFET N-CH 500V 13A [See More]

• Packing Method: Tube; Tube
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 500

The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits. [See More]

• Packing Method: Tube
• V_(BR)DSS: 650

• Polarity: N-Channel
• I_DSS: 15000

MOSFET Trench POWER MOSFETs 200v, 60A [See More]

• Packing Method: Tube; Tube
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 200

N-CHANNEL POWER MOSFET [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

N-channel Power Mosfet, Qfet ®, 1000 V, 8.0 A, 1.45 ?, TO-247 [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

OPTLMOS N-CHANNEL POWER MOSFET [See More]

• Packing Method: Tube; Tube
• Q_G: 148

• Polarity: N-Channel
• P_D: 300000

Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin SOIC, Tube [See More]

• Packing Method: Tube; Tube
• T_J: -40 to 150

• P_D: 625

R6018JNX IS A POWER MOSFET WITH [See More]

• Packing Method: Tube; Tube
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 600

R6020JNZ4 IS A POWER MOSFET WITH [See More]

• Packing Method: Tube; Tube
• P_D: 252000

• Q_G: 45
• T_J: -55 to 150

Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4 [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 100

• Polarity: N-Channel
• r_DS(on): 0.5400

Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET ® Power Mosfet - TO-220-3 [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

Single N-Channel 40 V 2.4 mOhm 89 nC HEXFET ® Power Mosfet - IPAK [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

Single N-Channel 500 V 3 Ohms Surface Mount Power Mosfet - TO-252 [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: 500

• Polarity: N-Channel
• r_DS(on): 3

Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS? Power Mosfet - TO-251 [See More]

• Packing Method: Tube; Tube
• Q_G: 10.5

• Polarity: N-Channel
• P_D: 43000

Single N-Channel 800 V 85 mOhm 285 nC CoolMOS? Power Mosfet - TO-247-3 [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

Single P-Channel 200 V 0.8 Ohm Flange Mount Power Mosfet - TO-220AB [See More]

• Packing Method: Tube; Tube
• V_(BR)DSS: -200

• Polarity: P-Channel
• r_DS(on): 8.00E8

STMICROELECTRONICS STF9NK90Z Power MOSFET, N Channel, 3.6 A, 900 V, 1.1 ohm, 10 V, 3.75 V [See More]

• Packing Method: Tube; Tube
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 900

VISHAY SIHA12N60E-E3 Power MOSFET, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 4 V [See More]

• Packing Method: Tube; Tube
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 600

VISHAY SIHP15N60E-GE3 Power MOSFET, N Channel, 15 A, 600 V, 0.23 ohm, 10 V, 2 V [See More]

• Packing Method: Tube; Tube
• Q_G: 78

• r_DS(on): 0.2800
• P_D: 180000